JPS6088572U - semiconductor light emitting device - Google Patents

semiconductor light emitting device

Info

Publication number
JPS6088572U
JPS6088572U JP18170383U JP18170383U JPS6088572U JP S6088572 U JPS6088572 U JP S6088572U JP 18170383 U JP18170383 U JP 18170383U JP 18170383 U JP18170383 U JP 18170383U JP S6088572 U JPS6088572 U JP S6088572U
Authority
JP
Japan
Prior art keywords
waveguide
emitting device
light emitting
semiconductor light
reflective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18170383U
Other languages
Japanese (ja)
Inventor
忠夫 戸田
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP18170383U priority Critical patent/JPS6088572U/en
Publication of JPS6088572U publication Critical patent/JPS6088572U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図は本考案の実施例を示す断面図である。 １・・・基板、２・・・半導体レーザチップ、４ａ、４
ｂ・・・へき開面（レーザ光取出面）、５・・・導波路
、６・・・反射層。1 and 2 are sectional views showing an embodiment of the present invention. 1... Substrate, 2... Semiconductor laser chip, 4a, 4
b... Cleavage plane (laser light extraction surface), 5... Waveguide, 6... Reflection layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基板上に配設された半導体レーザチップ、該半導体レー
ザチップのレーザ光取出面に一端が光学的に接触し上記
レーザ光の進行方向に延在する導波路、該導波路の他端
と接触し上記導波路材料と異なる屈折率を有した反射層
とを有し、上記導波路と反射層との界面は臨界角以上と
したことを特徴とする半導体発光装置。A semiconductor laser chip disposed on a substrate, a waveguide having one end optically in contact with a laser light extraction surface of the semiconductor laser chip and extending in the traveling direction of the laser light, and a waveguide in contact with the other end of the waveguide. A semiconductor light emitting device comprising a reflective layer having a refractive index different from that of the waveguide material, and an interface between the waveguide and the reflective layer is set at a critical angle or more.
JP18170383U 1983-11-24 1983-11-24 semiconductor light emitting device Pending JPS6088572U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18170383U JPS6088572U (en) 1983-11-24 1983-11-24 semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18170383U JPS6088572U (en) 1983-11-24 1983-11-24 semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS6088572U true JPS6088572U (en) 1985-06-18

Family

ID=30393683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18170383U Pending JPS6088572U (en) 1983-11-24 1983-11-24 semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS6088572U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135528A (en) * 2009-03-13 2009-06-18 Hitachi Ltd Semiconductor optical element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5067597A (en) * 1973-10-15 1975-06-06
JPS5474687A (en) * 1977-11-26 1979-06-14 Sharp Corp Monitor construction for photo semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5067597A (en) * 1973-10-15 1975-06-06
JPS5474687A (en) * 1977-11-26 1979-06-14 Sharp Corp Monitor construction for photo semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135528A (en) * 2009-03-13 2009-06-18 Hitachi Ltd Semiconductor optical element

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