JPS6086548A - Projecting and exposing device - Google Patents

Projecting and exposing device

Info

Publication number
JPS6086548A
JPS6086548A JP58194177A JP19417783A JPS6086548A JP S6086548 A JPS6086548 A JP S6086548A JP 58194177 A JP58194177 A JP 58194177A JP 19417783 A JP19417783 A JP 19417783A JP S6086548 A JPS6086548 A JP S6086548A
Authority
JP
Japan
Prior art keywords
reticles
light
wavelength
reticle
projection lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58194177A
Other languages
Japanese (ja)
Inventor
Atsushi Shibata
淳 柴田
Hisamasa Tsuyuki
露木　寿正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58194177A priority Critical patent/JPS6086548A/en
Publication of JPS6086548A publication Critical patent/JPS6086548A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain always constant exposing line width by arranging a mirror depending upon the wavelength of irradiated light and having the characteristic of selective reflection between a reticle and a projection lens. CONSTITUTION:Light from an illumination light source lamp 2 is divided into two parts by a translucent mirror 11 and then reflected by mirrors 12, 13 respectively to illuminate the reticles 1, 10. Filters are arranged on the passages of the two-divided light rays to select the wavelength of light to be irradiated to the reticles 1, 10 and the reticles 1, 10 are irradiated by light rays having different wavelength respectively. The two reticles 1, 10 can be arranged on the optimum positions respectively in accordance with the exposed wavelength. Even if light rays having different wavelength are superposed by a projection lens 4, a clear circuit pattern can be exposed without lossing its resolution.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、投影露光装置に関し、特に露光特性の改善に
係るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a projection exposure apparatus, and particularly to improvement of exposure characteristics.

〔発明の背景〕[Background of the invention]

半導体の糸種回路パターンをウェハ上に転写する方法と
して、レチクルの原画を投影レンズによって等倍または
１１５．１／１０などに縮小して投影露光する装置があ
る。As a method for transferring a semiconductor thread type circuit pattern onto a wafer, there is an apparatus in which an original image on a reticle is reduced to the same size or 115.1/10 using a projection lens and exposed by projection.

第１図は、このような投影露光装置の原理構成図である
。レチクル１は照明光源ラング２がらの光がコンデンサ
レンズ３によ＃）条光されて照明される。レチクル１内
の回路パターンは、投影レンズ４によってウェハ５に投
影露光される。６はウェハをステップ状に移動させて露
光を繰り返すためのステップ送りステージである。光源
ランプ２からの照明光はシャッタ７により適正な時間内
でウェハ５の露光が繰シ返されるように制御される。FIG. 1 is a diagram showing the basic structure of such a projection exposure apparatus. A reticle 1 is illuminated by light from an illumination light source rung 2 passing through a condenser lens 3. The circuit pattern within the reticle 1 is projected and exposed onto the wafer 5 by the projection lens 4 . Reference numeral 6 denotes a step feed stage for repeating exposure by moving the wafer in steps. The illumination light from the light source lamp 2 is controlled by a shutter 7 so that the exposure of the wafer 5 is repeated within an appropriate time.

８はシャッタ７の駆動機構である。8 is a drive mechanism for the shutter 7.

ところで、このような露光装置に使用される光パターン
として１μｍ前後の高解像度が費求されるために投影レ
ンズ４が色収差の影響を除いた単色光を対象に設計され
ているためである。By the way, this is because the projection lens 4 is designed for monochromatic light excluding the influence of chromatic aberration because a high resolution of around 1 μm is required for the light pattern used in such an exposure apparatus.

しかし、このように単色光で露光を行う場合、ウェハ５
上に塗布された感光材（レジスト）に定在波が発生し、
露光線幅に一定の変動幅が発生する欠点がある。この原
因は、レジストへの入射光とウェハ５面からの反射光と
が干渉を起し、光の強度の振幅が干渉の位相の変化に伴
って周期的に変化するためである。However, when performing exposure with monochromatic light in this way, the wafer 5
A standing wave is generated in the photosensitive material (resist) coated on top,
There is a drawback that a certain fluctuation range occurs in the exposure line width. This is because the light incident on the resist and the light reflected from the surface of the wafer 5 interfere with each other, and the amplitude of the light intensity changes periodically as the phase of the interference changes.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、常に一定の露光線幅が得られる投影露
光装置を提供することにある。An object of the present invention is to provide a projection exposure apparatus that can always provide a constant exposure line width.

〔発明の概要〕[Summary of the invention]

本発明は、２枚のレチクルをｊ外載し、両レチクルのパ
ターンを重ねて同時に露光する機構を設け、各レチクル
にはそれぞれ異なる波長の露光光源を照射することによ
り、レジスト中の定在波の発生をなくすようにして常に
一定の露光線幅が得られるようにしたものである。In the present invention, two reticles are mounted externally, and a mechanism is provided that overlaps the patterns of both reticles and exposes them at the same time. By irradiating each reticle with an exposure light source of a different wavelength, the standing waves in the resist are This eliminates the occurrence of rays and ensures that a constant exposure line width is always obtained.

〔発明の実施例〕[Embodiments of the invention]

第２図は、本発明による２櫨殖の異なる露光波長を使用
した投影光装置の原理０１成図である１、同図において
、レチクル１の回路パターンを投影レンズ４によシウエ
ハ５の上に投影する機構は、第１図で述べたのと同じで
必るが、本実施例においてはレチクル１とし／ズ４との
間に半透明ミラー９が挿入されている点が第１に異なる
。この半透明ミラー９はレチクル１の他に設けられた第
２のレチクル１０の像を前述の第１のレチクルの像に重
畳させてウェハ５の上に投影させるためのものである。FIG. 2 is a diagram illustrating the principle of a projection light device using two different exposure wavelengths according to the present invention. The projection mechanism is necessarily the same as that described in FIG. 1, but the first difference is that a semi-transparent mirror 9 is inserted between the reticle 1 and the lens 4 in this embodiment. This semitransparent mirror 9 is used to project the image of a second reticle 10 provided in addition to the reticle 1 onto the wafer 5 by superimposing the image of the first reticle.

照明光源ランプ２からの光は、半透明ミラー１１によっ
て２分され、更にミラー１２および１３によりてそれぞ
れ反射されてレチクル１および１０をそれぞれ照明する
ｕ２分きれた光の通路にはフィルタ１４および１５が設
けられている。The light from the illumination light source lamp 2 is divided into two parts by a semi-transparent mirror 11, and is further reflected by mirrors 12 and 13, respectively, to illuminate the reticles 1 and 10, respectively.Filters 14 and 15 are provided in the path of the light divided by u2. is provided.

このフィルタ１４．１５によって、レチクル１および１
０に照射てれる光の波長が選択され、両レチクル１，１
０はそれぞれ異なった波長の光で照明される。なお、こ
の実施例は照明光源ランプ２の光から特定の波長の光を
選択使用するために、フィルター１４．１５ｔ−使用す
るものであるが、ミラー１２及び１３によってそれぞれ
特定の波長の光のみを選択反射させる構成としてもよい
。更に、半透明ミラー９または１１に選択透過、反射の
性質が与えられるならば、これらのミラー９゜１１によ
シ単色光を得ることもできる。This filter 14.15 allows reticles 1 and 1
The wavelength of the light irradiated on 0 is selected, and both reticles 1, 1
0 are each illuminated with light of a different wavelength. In this embodiment, filters 14 and 15t are used to selectively use light of a specific wavelength from the light of the illumination light source lamp 2, but the mirrors 12 and 13 are used to selectively use light of a specific wavelength. It may also be configured to selectively reflect. Furthermore, if the semi-transparent mirror 9 or 11 is given the property of selective transmission or reflection, it is also possible to obtain monochromatic light from these mirrors 9 and 11.

さて、２枚のレチクルに設けられた同じ回路パターンは
、共通のレンズ４によってウェハ５の上に投影されるの
であるが、この場合、異なる波長の光による投影像をウ
ェハ５の上で同一の寸法でかつ、両者とも適正焦点位置
で血ね合せする必要がある。異なる波長に対しては、レ
ンズの焦点距離が異なるので、２枚のレチクル１，１０
のレンズ４に対する距離も異なった値で設定される。す
なわち、第２図に於て、レンズ４とウェハ５との距離ａ
およびレンズ４と半透明ミラ−９との距離ｔは２枚のレ
チクルｌ、１０に対して共通であシ、半透明ミラー９と
レチクル１．１０との間の距離すお↓びｂ′が異なシ、
それぞれ最適焦点をウニ／・５の上に結１隊する値に設
定される。Now, the same circuit pattern provided on two reticles is projected onto the wafer 5 by a common lens 4, but in this case, the projected images by light of different wavelengths are projected onto the wafer 5 at the same time. It is necessary to match the size and the proper focus position for both. For different wavelengths, the focal lengths of the lenses are different, so two reticles 1 and 10 are used.
The distances to the lens 4 are also set to different values. That is, in FIG. 2, the distance a between the lens 4 and the wafer 5
The distance t between the lens 4 and the semi-transparent mirror 9 is common to the two reticles l and 10, and the distance t between the semi-transparent mirror 9 and the reticle 1.10 is different types,
The optimum focus is set to a value that places one group on top of the sea urchin/.5.

本実施例によれば、上述の如く、２枚のレチク＃１．１
０の位置を露光波長に対応してそれぞれ最適位置に配置
できるので、異なる波長の光を投影レンズ４で重畳させ
ても解像度を損うことなく、鮮明な回路パターンを露光
することが可能となる。According to this embodiment, as described above, two reticles #1.1
Since the 0 position can be placed at the optimal position corresponding to the exposure wavelength, it is possible to expose a clear circuit pattern without losing resolution even if lights of different wavelengths are superimposed by the projection lens 4. .

異なる２波長による定在仮の周期は異なるので、両者の
定在波は重畳によって相殺されて明確な定住波は認めら
れなくなる。Since the standing periods of the two different wavelengths are different, the two standing waves are canceled by superposition, and no clear standing wave is recognized.

なお前述したごとく、投影ランプ４に対する両レチクル
の距離は異なるので、レチクルパターンのウェハ５の上
への投影倍率も異なるものとなるが、これに対してはウ
ェハ５の上で２枚のレチクルのパターンが重畳するよう
に各レチクルの原画寸法を定めればよい。As mentioned above, since the distances of the two reticles to the projection lamp 4 are different, the projection magnification of the reticle pattern onto the wafer 5 is also different. The original dimensions of each reticle may be determined so that the patterns overlap.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように本発明によれば、常に一
定した露光線幅が得られ、果槓度の増大などに大きく寄
与できる効果がある。As is clear from the above description, according to the present invention, a constant exposure line width can be obtained at all times, and there is an effect that can greatly contribute to increasing the degree of exposure.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は一般的な投影露光装置の原理構成図、第２図は
本発明の一実施例を示す原理構成図である。 １、１０・・・レチクル、２・・・照明光源ランプ、３
・・・コンデンサレンズ、４・・・投影レンズ、５・・
・ウェハ、６・・・ステップ送りステージ、７・・・シ
ャッタ、８・・・駆動機構、９，１１・・・半透明ミラ
ー、１２，１３・・・ミラー、１４、１５・・・フィル
タ。 代理人　弁理士　高橋明夫 箔１図FIG. 1 is a diagram showing the basic structure of a general projection exposure apparatus, and FIG. 2 is a diagram showing the basic structure of an embodiment of the present invention. 1, 10... Reticle, 2... Illumination light source lamp, 3
... Condenser lens, 4... Projection lens, 5...
- Wafer, 6... Step feed stage, 7... Shutter, 8... Drive mechanism, 9, 11... Semi-transparent mirror, 12, 13... Mirror, 14, 15... Filter. Agent Patent Attorney Akio Takahashi Leaf 1

Claims (1)

【特許請求の範囲】 １、照明光源により照明されたレチクルの原画を投影レ
ンズによシ光学的にウェハ上に投影露光する光学機構か
ら成る投影露光装置において、上記レチクルと上記投影
レンズの間に照射光波長に依存し、選択反射の特性を有
するミラーを設け、該ミ２−によって２枚のレチクルパ
ターンを重畳させて上記投影レンズによシウエハ上にレ
チクル原画を投影露光するように各光学機構要素を配置
したことを特徴とする投影露光装置。 ２、前記２枚のレチクルを、各々異なる波長の照明光で
照射することを特徴とする特許請求の範囲第１項記載の
投影露光装置。 ３、前記投影レンズと前記２枚のレチクルとの距離を照
明光の波長に対応した焦点結像位置に配置したことを特
徴とする特許請求の範囲第１項記載の投影露光装置。[Scope of Claims] 1. In a projection exposure apparatus comprising an optical mechanism for optically projecting and exposing an original image of a reticle illuminated by an illumination light source onto a wafer using a projection lens, there is provided a projection exposure device between the reticle and the projection lens. Each optical mechanism is provided with a mirror having a characteristic of selective reflection depending on the wavelength of the irradiated light, and is arranged so that the two reticle patterns are superimposed by the mirror 2 and the original reticle image is projected and exposed onto the wafer by the projection lens. A projection exposure apparatus characterized in that elements are arranged. 2. The projection exposure apparatus according to claim 1, wherein the two reticles are irradiated with illumination light of different wavelengths. 3. The projection exposure apparatus according to claim 1, wherein the distance between the projection lens and the two reticles is arranged at a focus imaging position corresponding to the wavelength of the illumination light.
JP58194177A 1983-10-19 1983-10-19 Projecting and exposing device Pending JPS6086548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58194177A JPS6086548A (en) 1983-10-19 1983-10-19 Projecting and exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58194177A JPS6086548A (en) 1983-10-19 1983-10-19 Projecting and exposing device

Publications (1)

Publication Number Publication Date
JPS6086548A true JPS6086548A (en) 1985-05-16

Family

ID=16320208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58194177A Pending JPS6086548A (en) 1983-10-19 1983-10-19 Projecting and exposing device

Country Status (1)

Country Link
JP (1) JPS6086548A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4974049B2 (en) * 2004-02-20 2012-07-11 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4974049B2 (en) * 2004-02-20 2012-07-11 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method

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