JPS608384A - Activation of fluorescence of alkali halide with nitrogen - Google Patents
Activation of fluorescence of alkali halide with nitrogenInfo
- Publication number
- JPS608384A JPS608384A JP11642683A JP11642683A JPS608384A JP S608384 A JPS608384 A JP S608384A JP 11642683 A JP11642683 A JP 11642683A JP 11642683 A JP11642683 A JP 11642683A JP S608384 A JPS608384 A JP S608384A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- light ray
- fluorescence
- alkali halide
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Luminescent Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はアルカリハライド結晶を・、高温、高圧の窒素
気体中に長時間おくことで結晶を螢光体にする方法であ
る。上記の処理をすると結晶は励起光照射により螢光を
発する。又、この結晶にX−線等の放射線を当てると、
異なった波長の励起光で異なった波長の螢光を発する様
になる。上記の螢光はいずれも未処理の結晶では得られ
ない、螢光機構については未だ明らかではないが、純粋
のアルカリハうイドを窒素気体中の熱処理で新うたな伯
光体として実用にする可能性が生じる。ここで本発明の
実施例を示す、純粋な塩化カリウム結晶を乾燥した1気
圧の窒素気体とともにアンプル中に入れ600Cまで温
度を上げて24時間保つ、このときアンプル中の窒素気
体の圧力は約3気圧になっている、この処理をした結晶
に266nm附折の光を当てると400nmの光を出す
、又、この結晶に、を射線(X線)を当てた後、550
nm附近の光を当てると450nm附近の光を出す。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method of turning an alkali halide crystal into a phosphor by leaving it in nitrogen gas at high temperature and high pressure for a long period of time. When subjected to the above treatment, the crystal emits fluorescence when irradiated with excitation light. Also, when this crystal is exposed to radiation such as X-rays,
Fluorescence of different wavelengths is emitted by excitation light of different wavelengths. None of the above fluorescence can be obtained from untreated crystals, and the mechanism of fluorescence is still unclear, but it is possible that pure alkali hydride can be put to practical use as a new phosphor by heat treatment in nitrogen gas. Gender arises. Here, an example of the present invention is shown in which pure potassium chloride crystals are placed in an ampoule with dry nitrogen gas at 1 atm and the temperature is raised to 600C and kept for 24 hours.At this time, the pressure of the nitrogen gas in the ampoule is about 3 When this treated crystal under atmospheric pressure is exposed to 266 nm light, it emits 400 nm light;
When exposed to light around nm, it emits light around 450 nm.
特許出願人 三 宅 功Patent applicant Isao Sanyake
Claims (1)
物質にする方法A method of heat-treating alkali halide crystals in nitrogen gas to turn them into fluorescent materials.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11642683A JPS608384A (en) | 1983-06-28 | 1983-06-28 | Activation of fluorescence of alkali halide with nitrogen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11642683A JPS608384A (en) | 1983-06-28 | 1983-06-28 | Activation of fluorescence of alkali halide with nitrogen |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS608384A true JPS608384A (en) | 1985-01-17 |
Family
ID=14686794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11642683A Pending JPS608384A (en) | 1983-06-28 | 1983-06-28 | Activation of fluorescence of alkali halide with nitrogen |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS608384A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6144080U (en) * | 1984-08-24 | 1986-03-24 | 株式会社トキメック | electric switching valve |
JPS62119580U (en) * | 1986-01-22 | 1987-07-29 | ||
US5250819A (en) * | 1991-04-15 | 1993-10-05 | Canon Kabushiki Kaisha | Light emitting device having stepped non-nucleation layer |
-
1983
- 1983-06-28 JP JP11642683A patent/JPS608384A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6144080U (en) * | 1984-08-24 | 1986-03-24 | 株式会社トキメック | electric switching valve |
JPH0343501Y2 (en) * | 1984-08-24 | 1991-09-11 | ||
JPS62119580U (en) * | 1986-01-22 | 1987-07-29 | ||
JPH0314615Y2 (en) * | 1986-01-22 | 1991-04-02 | ||
US5250819A (en) * | 1991-04-15 | 1993-10-05 | Canon Kabushiki Kaisha | Light emitting device having stepped non-nucleation layer |
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