JPS6077975A - Electrode construction of chemical vapor deposition device - Google Patents

Abstract

PURPOSE:To provide a titled device which permits simple and easy putting in and out of a drum-shaped body in a transverse direction into a cylindrical electrode provided around the drum-shaped base body by forming longitudinally a notch to said cylindrical electrode and constituting the cylindrical electrode movably in the transverse direction. CONSTITUTION:A notch is longitudinally formed to a cylindrical electrode 10 supported perpendicularly by a supporting bar 15 and blowoff and discharge holes 30, 31 for a reactive gas are formed between both end faces 11, 12 of said electrode and both side walls 20, 21 of a header assembly 19 having a sectorial shape with a chemical vapor deposition device which deposites the resultant product of reaction on a drum-shaped base body 18 by disposing coaxially the body 18 in the electrode 10 and bringing the reactive gas introduced into the annular space between the electrode and the base body into reaction by the electric discharge generated when a voltage is impressed to the electrode 10. The electrode 10 moves horizontally in a transverse direction up to the position of a chain line 10A and the base body 18 is made easily put into and out of the electrode 10 by moving horizontally said body in the transverse direction and passing the same through the above-mentioned notch.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention involves disposing a drum-shaped substrate in a cylindrical electrode, applying a voltage to the cylindrical electrode while introducing a reactive gas into the space between the substrate and the electrode, and applying the voltage to the cylindrical electrode. The reaction products of the reactive gas excited by the electric discharge are deposited on the peripheral surface of the substrate.
The present invention relates to a chemical vapor deposition apparatus for 3T deposition.

For example, such a chemical vapor deposition device coats Be+Tθ, Se -1-
It is used to deposit and form photoresist films such as As, Amorphous 81, etc. In that case, the drum base, also vertically arranged in a vertically arranged cylindrical electrode, is arranged so as to cover a common lees I, and an example is used to form a photoresist film of amorphous S1. In this case, monosilane, i.e. 81H4, is introduced as a reactive gas into the space between the cylinder 9 and the substrate at a pressure of 0.2 to 3 torr, and a 'h frequency voltage is applied to the cylindrical electrode. Is this SiH4? irr J,';] is excited by the electric discharge caused by the wave voltage and reacts, causing the generated Sl to settle on the peripheral surface of the substrate as amorphous S1 υ(and the amorphous S1 photoresist film is It is formed.

However, in conventional chemical vapor deposition apparatuses, it is necessary to move the elongated drum base in the axial direction, that is, in the vertical direction, to put it in and take it out of the cylindrical electrode. It takes. Moreover, the device is complicated! , its size also increases.

Therefore, the main object of the present invention is to eliminate the drawbacks of conventional chemical vapor deposition apparatuses as described above.

To achieve this objective, the chemical vapor deposition apparatus according to the invention includes a cylindrical electrode having a longitudinal notch formed therein, and a substrate being moved by lateral relative movement between the cylindrical electrode and the substrate such that the substrate passes through the notch. 'JiN? Let it be r.

According to this feature, by moving the base body in the cylindrical direction, that is, in the horizontal direction, by passing the base body through the notch of the cylindrical electrode, or by fixing the base body, the cylindrical electrode is moved in the cylindrical direction. By doing so, it is possible to easily take in and take out the substrate. Moreover, the device is easy to use.
Its size can also be reduced.

Embodiments of the present invention will be described below with reference to the drawings.

As shown in FIGS. 1 and 1, the illustrated embodiment of the chemical vapor deposition apparatus according to the invention has a vertically arranged hollow cylindrical electrode 10 extending from the top to the bottom in its right-hand portion. Add a notch extending in the longitudinal direction to the end wall l described below.
It has between l and l-. In short, the cylindrical electrode IO actually has a C-shaped cross section, and the C-shaped inner circumference vi3 and outer circumference wall l
radially extending end wall lI bounding said notch //
and 7-.

The cylinder 1d pole/θ is supported in its left part by a single support rod 15 extending in the radial direction, which has a cooling water passage (not shown).
The shield /A that surrounds the outer peripheral wall /l and the support rod 15 from the outside is connected to the cylindrical electrode 10 by many insulating support members (their positions are shown in Figure 1). Although it is mechanically supported, it is electrically isolated from this. Although a high frequency pressure is applied to the cylindrical electrode /θ during operation, the shield /A is grounded to electrically shield the cylindrical electrode IO from the outside.

A drum-shaped base/gF, i is vertically disposed coaxially within the cylindrical electrode IO as shown in broken lines in FIG.

1g of the base from the outside through the notch between the end face // and l
A header assembly 19 having a substantially fan-shaped cross-sectional shape extending in the vertical longitudinal direction from the upper end to the lower end of the cylindrical electrode lO is in close facing contact with the portion of the shield 16 adjacent to the end wall l/. 1st ff1U wall-〇 and end wall/,
Mu(I
ll wall, 2/.

The header assembly 19 includes a blowing chamber 2 in contact with the first end wall O.
-1 A discharge chamber 3 in contact with the first end wall 1, an intermediate chamber outside these compartments, divided into 2 parts, and a support pipe 5 extending radially outward from the rear of the intermediate room 3. to be extended to

Such header assembly 1qrx is used to accomplish blowing and evacuation of reaction gas. During operation, the reaction gas is blown out through the supply pipe 6 coaxially extending inside the support tube 5 and the bent pipe in the intermediate chamber 6 connecting the supply pipe roller and the blowing chamber 1. Reaching chamber 1, a rectifier plate 1 is installed in blowout chamber 1.

28B, passes through the opening of Koga, and further passes through the cylindrical electrode io
The air is blown out into the partial annular space 30 from the blowing hole 30 formed in the first IJIIJJ column so as to open toward the partial annular space 1g between the base body 1g and the partial annular space 1g.

As shown in FIG. 3, the blow-off holes 30F-1 are arranged in a row in the vertical direction, that is, in the longitudinal direction, so that the reactant gas blown out from the blow-off holes 30F-1 flows through the substrate/substrate in the partial annular space.
g is flowed substantially uniformly in the circumferential direction. During this time, the reaction gas is excited by the discharge caused by the voltage applied to the cylindrical electrode IO, and a decomposition reaction of the reaction gas takes place, and the decomposition products adhere to the surface of the substrate IO, and the reaction gas (more specifically, the gas after the reaction) reaches the discharge hole 31. The 21st wall, 2 so as to open toward the discharge hole 3/l-J partial annular space Kota.
/ and are arranged as shown in FIG. 3 similarly to the blow-off holes 30. The reaction gas (gas after reaction) is discharged from the discharge hole 31 through the intermediate chamber 3 and the support tube S.

In order to shut off the space 9 from the outside, seal members 3 and 33 that contact the Vii shield 16 are fixed to the first (IIIl wall-0) and the second upper wall 1 of the header assembly 19.

The cylindrical electrode 10ti can be moved to the left together with the support rod is and the shield 16, for example, as shown by the chain line IOA.

The cylindrical electrode 10 and the base body /g move relative to each other so that the base body passes through the notch between the wall 72 and the cylindrical electrode 10. This allows the base body 1 to be moved in and out of the cylindrical electrode laterally, that is, in the horizontal direction.

Along with the movement of the cylindrical electrode IO, or alternatively, the header assembly 19 may be configured to move to the right, for example as shown by the # line lteA.

Header assembly l? After moving it sufficiently to the right, move the base i
It can be moved to the right to pass through the notch between gVi sidewall // and lλ. This is also a relative movement between the base body /g and the cylindrical electrode 10, and this also allows the base body 7g to be moved in and out of the cylindrical electrode laterally, that is, in the horizontal direction.

In the above explanation, it was assumed that the notch between the end wall /l and 7.2 reaches from the upper end to the lower end of the cylindrical electrode 10,
In some cases, the upper and/or lower ends may not be reached. Header assembly l? Also cylindrical electrode I
It is also possible not to extend from the upper end of O to the lower end.

[Brief explanation of drawings]

Fig. 1 is a horizontal sectional view of an embodiment of the present invention with a chemical vapor deposition number g4; FIG. 3 is a diagram showing the arrangement of blow-off holes and discharge holes in the device. In the drawing, 10t-1 cylindrical electrode, // and /, 2 are the end walls of both τif1 of the notch, /g4''i' base 1.j10
A blowout hole for n reaction gas and a discharge hole for 3/n reaction gas are shown.

Claims (1)

[Claims] A drum-shaped substrate is placed inside a cylindrical electrode, and a reactive gas is introduced into the space between the substrate and the electrode.
Chemical vapor I (in the device, a longitudinal notch is formed in the cylindrical electrode) in which a voltage is applied and the products of the reaction of the reactive gas excited by the discharge caused by this voltage are deposited and deposited on the circumferential surface of the substrate. , this notch is excited by a circle@electrode and the substrate by lateral relative movement of the substrate into a cylinder.
14 An electrode structure for a chemical vapor deposition device whose main feature is that it can be taken in and out of the chamber.