JPS6076182A - 出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ - Google Patents

出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ

Info

Publication number
JPS6076182A
JPS6076182A JP58183445A JP18344583A JPS6076182A JP S6076182 A JPS6076182 A JP S6076182A JP 58183445 A JP58183445 A JP 58183445A JP 18344583 A JP18344583 A JP 18344583A JP S6076182 A JPS6076182 A JP S6076182A
Authority
JP
Japan
Prior art keywords
electrodes
current
semiconductor laser
layer
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58183445A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0122753B2 (enrdf_load_stackoverflow
Inventor
Hiroyoshi Yajima
矢嶋　弘義
Katsuhiro Suzuki
鈴木　克弘
Akihiro Sone
明弘 曽根
Seiji Mukai
向井　誠二
Shinichiro Uekusa
新一郎 植草
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58183445A priority Critical patent/JPS6076182A/ja
Publication of JPS6076182A publication Critical patent/JPS6076182A/ja
Publication of JPH0122753B2 publication Critical patent/JPH0122753B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP58183445A 1983-10-01 1983-10-01 出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ Granted JPS6076182A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58183445A JPS6076182A (ja) 1983-10-01 1983-10-01 出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58183445A JPS6076182A (ja) 1983-10-01 1983-10-01 出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS6076182A true JPS6076182A (ja) 1985-04-30
JPH0122753B2 JPH0122753B2 (enrdf_load_stackoverflow) 1989-04-27

Family

ID=16135891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58183445A Granted JPS6076182A (ja) 1983-10-01 1983-10-01 出射ビ−ムの偏向スイツチ機能を有する半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS6076182A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281383A (ja) * 1986-05-29 1987-12-07 Omron Tateisi Electronics Co 半導体レ−ザ
JPS63177490A (ja) * 1987-01-17 1988-07-21 Mitsubishi Electric Corp 半導体レ−ザ装置
JP2007273549A (ja) * 2006-03-30 2007-10-18 Anritsu Corp 半導体光素子及び光スイッチングシステム並びに波長可変レーザ
KR20150096315A (ko) * 2014-02-14 2015-08-24 오므론 가부시키가이샤 정전용량형 압력 센서 및 입력 장치

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281383A (ja) * 1986-05-29 1987-12-07 Omron Tateisi Electronics Co 半導体レ−ザ
JPS63177490A (ja) * 1987-01-17 1988-07-21 Mitsubishi Electric Corp 半導体レ−ザ装置
JP2007273549A (ja) * 2006-03-30 2007-10-18 Anritsu Corp 半導体光素子及び光スイッチングシステム並びに波長可変レーザ
KR20150096315A (ko) * 2014-02-14 2015-08-24 오므론 가부시키가이샤 정전용량형 압력 센서 및 입력 장치
JP2015152457A (ja) * 2014-02-14 2015-08-24 オムロン株式会社 静電容量型圧力センサ及び入力装置

Also Published As

Publication number Publication date
JPH0122753B2 (enrdf_load_stackoverflow) 1989-04-27

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