JPS607185A - Led-array light source - Google Patents
Led-array light sourceInfo
- Publication number
- JPS607185A JPS607185A JP58115380A JP11538083A JPS607185A JP S607185 A JPS607185 A JP S607185A JP 58115380 A JP58115380 A JP 58115380A JP 11538083 A JP11538083 A JP 11538083A JP S607185 A JPS607185 A JP S607185A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- transparent electrode
- led
- light source
- electrode film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 108091008695 photoreceptors Proteins 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Combination Of More Than One Step In Electrophotography (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
- Facsimile Heads (AREA)
- Led Devices (AREA)
- Dot-Matrix Printers And Others (AREA)
- Camera Data Copying Or Recording (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明は、電子写真方式を用いたノンインパクトプリン
タにおける光書込みヘッド用のLEDアレイ光源に関す
る。TECHNICAL FIELD The present invention relates to an LED array light source for an optical writing head in a non-impact printer using electrophotography.
従来技術
まず、第1図はLEDアレイを光源とするプリンタの概
要を示すもので、感光体ドラム1表面を帯電チャージャ
2により一様帯電した後、LEDアレイと結像素子を組
込んだ光書込みヘッド3における各LED素子のON・
OFFによる光スイッチングで感光体ドラム1上に静電
潜像を形成す1−
る。その後、現像ユニット4により潜像を顕像化し、給
紙ローラ5によって給紙された転写紙6上に転写チャー
ジャ7により転写する。転写後、転写紙6は搬送ベルト
8により定着ユニット9に送られて定着され、排紙ロー
ラ10により排紙される。一方、感光体ドラム1はクリ
ーニングユニットIIにより表面がクリーニングされ次
の作像に備える。Prior Art First, Figure 1 shows an overview of a printer that uses an LED array as a light source.After the surface of a photoreceptor drum 1 is uniformly charged by a charger 2, an optical writing device incorporating an LED array and an imaging element is used. ON/OFF of each LED element in head 3
An electrostatic latent image is formed on the photoreceptor drum 1 by optical switching when turned off. Thereafter, the latent image is visualized by the developing unit 4 and transferred by the transfer charger 7 onto the transfer paper 6 fed by the paper feed roller 5. After the transfer, the transfer paper 6 is sent to a fixing unit 9 by a conveyance belt 8 and is fixed thereon, and is ejected by a paper ejection roller 10. On the other hand, the surface of the photosensitive drum 1 is cleaned by the cleaning unit II in preparation for the next image formation.
ここで、光書込みヘッド3は第2図および第3図に示す
ように、LEDアレイ12と結像素子、例えばセルフォ
ックレンズ13とからなり、LEDアレイ12は放熱板
14上にセラミック基板15を貼付け、このセラミック
基板15の中央にLEDアレイチップを並べて発光部1
6とする方式が一般的である。LEDの構造は第4図に
示すよ°うにN型間接遷移形結晶17の表層にP型頭域
18を設け、このP型頭域18に対する通電用の電極1
9を設けてなる。20は絶縁膜、21はN型用の電極で
ある。そして、P要領域I8は平面的にみると第5図に
示すように、所定間隔で一列に=2−
配列されており、各々のP要領域18に対する電極19
は列の両側に交互に配置されている。電極19を交互に
配置するのは、P要領域18のピッチが書込み密度によ
って決まりたとえば10本/ nrnで100μmピッ
チと非常に間隔が狭いためである。Here, as shown in FIGS. 2 and 3, the optical writing head 3 consists of an LED array 12 and an imaging element, such as a SELFOC lens 13. The LED array chips are pasted in the center of this ceramic substrate 15 and the light emitting part 1 is arranged.
6 is common. As shown in FIG. 4, the structure of the LED is such that a P-type head region 18 is provided on the surface layer of an N-type indirect transition type crystal 17, and an electrode 1 for energizing the P-type head region 18 is provided.
9 is provided. 20 is an insulating film, and 21 is an N-type electrode. As shown in FIG. 5, the P-required regions I8 are arranged in a row at predetermined intervals, and the electrodes 19 for each P-required region 18 are arranged in a row at predetermined intervals.
are placed alternately on both sides of the column. The reason why the electrodes 19 are arranged alternately is that the pitch of the P-required regions 18 is determined by the writing density and is very narrow, for example, 10 electrodes/nrn and a pitch of 100 μm.
このようなパターンを持ったLEDアレイを発光させる
と、その発光状態は均一でなく、第6図に示すように電
極19側に輝度のピークがずれた分布となってしまう。When an LED array having such a pattern is made to emit light, the light emitting state is not uniform, and the luminance peak is shifted toward the electrode 19 side as shown in FIG. 6.
すなわち、第6図は第5図のアレイ方向に対して直角方
向の輝度分布を示している。また、第4図において電極
19から電極21へ流れる電流は均一でなく、どうして
も電極19の近くに片寄ってしまう。そのため、電極1
9側に輝度のピークがずれてしまう。この結果、このよ
うな発光状態をもつLEDアレイ12の発光をセルフォ
ックレンズ13で感光体ドラム1表面に結像させた場合
、感光体ドラム1上のスポット形状は副走査方向(感光
体ドラム1の回転方向)に伸びたスポット形状となって
しまう。したがって、感光体ドラム1で光が当たった所
は現像され3−
ずに白く抜けるポジーポジ現像プロセスを採用した場合
には、■トン1〜横ラインはその前後の光照射の影響を
受け解像されにくくなる。また、光の当たった所を現像
するネガ−ポジ現像プロセスを採用した場合には、1ド
ツト横ラインが縦ラインに比べて太くなってしまう。い
ずれにしても、画像品質の低下を生ずる。That is, FIG. 6 shows the luminance distribution in a direction perpendicular to the array direction in FIG. 5. Further, in FIG. 4, the current flowing from the electrode 19 to the electrode 21 is not uniform, and is inevitably biased toward the electrode 19. Therefore, electrode 1
The brightness peak shifts to the 9 side. As a result, when the light emitted from the LED array 12 having such a light emitting state is imaged on the surface of the photoreceptor drum 1 by the SELFOC lens 13, the spot shape on the photoreceptor drum 1 changes in the sub-scanning direction (photoreceptor drum 1 This results in a spot shape that extends in the rotation direction). Therefore, if a positive-positive development process is adopted in which areas of the photoreceptor drum 1 that are exposed to light are not developed and appear white, the horizontal lines from 1 to 1 will be resolved due to the influence of light irradiation before and after them. It becomes difficult. Furthermore, when a negative-positive development process is adopted in which the areas exposed to light are developed, the horizontal one-dot line becomes thicker than the vertical line. In either case, a reduction in image quality occurs.
目的
本発明は、このような点に鑑みなされたもので、副走査
方向の解像度を向上させることができるLEDアレイ光
源を得ることを目的とする。Purpose The present invention was made in view of the above points, and an object of the present invention is to obtain an LED array light source that can improve the resolution in the sub-scanning direction.
構成 本発明の一実施例を第7図に基づいて説明する。composition An embodiment of the present invention will be described based on FIG.
第1図ないし第5図で示した部分と同一部分は同一符号
を用いて説明する。本実施例は、P要領域18の発光面
全面をI n203.5n02等による透明電極膜22
で直接覆い、この透明電極膜22とAI等による電極1
9とを接続したものである。Components that are the same as those shown in FIGS. 1 to 5 will be described using the same reference numerals. In this embodiment, the entire light emitting surface of the P essential region 18 is covered with a transparent electrode film 22 made of In203.5n02 or the like.
directly cover this transparent electrode film 22 with the electrode 1 made of AI etc.
9 are connected.
これにより、電極19は透明電極膜22を介し4−
てP要領域18と広い面積で接触するので、発光分布が
電極19側に片寄ることがなくそのムラを小さくするこ
とができる。よって、1ドツト横ラインが副走査方向に
太ることがなく、その解像度を向上させ、画像品質を向
上させることができるものである。As a result, the electrode 19 comes into contact with the P-required region 18 over a wide area via the transparent electrode film 22, so that the light emission distribution is not biased towards the electrode 19 side, and its unevenness can be reduced. Therefore, the one-dot horizontal line does not become thicker in the sub-scanning direction, and the resolution and image quality can be improved.
なお1本実施例では透明電極膜22と電極19とを別の
ものとしたが、電極19部分をも透明電極膜22と同一
材質により形成して一体化するようにしてもよい。Note that in this embodiment, the transparent electrode film 22 and the electrode 19 are separate, but the electrode 19 portion may also be formed of the same material as the transparent electrode film 22 and integrated.
また、電極19はP要領域18の列の片側に配列したも
のでもよい。Further, the electrodes 19 may be arranged on one side of the row of P essential regions 18.
効果
本発明は、上述したようにP壁領域全面を電極に接続さ
れた透明電極膜で直接覆ったので、発光分布の片寄りを
なくし、副走査方向の解像度を向上させることができる
ものである。Effects In the present invention, as described above, the entire P wall region is directly covered with a transparent electrode film connected to an electrode, so it is possible to eliminate unevenness of the light emission distribution and improve resolution in the sub-scanning direction. .
第1図はプリンタの概略側面図、第2図はその光書込み
ヘッドの正面図、第3図は側面図、第45−
図はLED構造を示す断面図、第5図は従来例を示す平
面図、第6図は輝度分布特性図、第7図は本発明の・一
実施例を示す副走査方向の断面図である。 18・・・
P型領域、19・・・電極、22・・・透明電極膜
出 願 人 株式会社 リ コ −
=6−
Iも」 閣
]7図
一兜、、3国
ズもU図Fig. 1 is a schematic side view of the printer, Fig. 2 is a front view of its optical writing head, Fig. 3 is a side view, Fig. 45 is a sectional view showing the LED structure, and Fig. 5 is a plan view showing a conventional example. 6 is a brightness distribution characteristic diagram, and FIG. 7 is a sectional view in the sub-scanning direction showing an embodiment of the present invention. 18...
P-type region, 19...electrode, 22...transparent electrode film Applicant Ricoh Co., Ltd.
Claims (1)
要領域の各々に通電用の電極を配置したLEDアレイ光
源において、P型領域全面を前記電極に接続された透明
電極膜で直接覆ったことを特徴とするLEDアレイ光源
。P regions are arranged in a line in an N-type indirect transition type crystal, and this P
1. An LED array light source in which a current-carrying electrode is arranged in each of the required regions, wherein the entire surface of the P-type region is directly covered with a transparent electrode film connected to the electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58115380A JPS607185A (en) | 1983-06-27 | 1983-06-27 | Led-array light source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58115380A JPS607185A (en) | 1983-06-27 | 1983-06-27 | Led-array light source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS607185A true JPS607185A (en) | 1985-01-14 |
Family
ID=14661093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58115380A Pending JPS607185A (en) | 1983-06-27 | 1983-06-27 | Led-array light source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS607185A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63138787A (en) * | 1986-12-01 | 1988-06-10 | Fuji Electric Co Ltd | Linear light-emitting element |
EP0448108A2 (en) * | 1990-03-23 | 1991-09-25 | Mitsubishi Denki Kabushiki Kaisha | Optical print head |
JP2006253361A (en) * | 2005-03-10 | 2006-09-21 | Oki Data Corp | Semiconductor apparatus, led head and image forming apparatus employing it |
-
1983
- 1983-06-27 JP JP58115380A patent/JPS607185A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63138787A (en) * | 1986-12-01 | 1988-06-10 | Fuji Electric Co Ltd | Linear light-emitting element |
EP0448108A2 (en) * | 1990-03-23 | 1991-09-25 | Mitsubishi Denki Kabushiki Kaisha | Optical print head |
JP2006253361A (en) * | 2005-03-10 | 2006-09-21 | Oki Data Corp | Semiconductor apparatus, led head and image forming apparatus employing it |
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