JPS6070729A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6070729A JPS6070729A JP58178781A JP17878183A JPS6070729A JP S6070729 A JPS6070729 A JP S6070729A JP 58178781 A JP58178781 A JP 58178781A JP 17878183 A JP17878183 A JP 17878183A JP S6070729 A JPS6070729 A JP S6070729A
- Authority
- JP
- Japan
- Prior art keywords
- group
- semiconductor element
- semiconductor device
- semiconductor
- organosilane compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
Abstract
Description
本発明は半導体装置、特には半導体素子表面をシリコー
ン化合９ａで被覆した耐湿特性が大巾Ｃ二改良された半
導体装置に関するものである。
半導体素子は一般に外部環境からの保護を目的としてセ
ラミックパッケージまたは樹脂などで封止されており、
この封止材については信頼性１価格および生産性の面か
らエポキシ樹脂、シリコーン樹脂などの合成樹脂組成物
Ｃ二よるものが汎用されている。しかし−この樹脂封止
された半導体装置Ｃ二は耐湿特性がよくないという大き
な問題があり−このために二樹脂封止に先豆って予じめ
半導体素子表面などをエポキシ変性シランなどのシラン
カップリング剤で被覆し一熱処理後Ｃ二樹脂封止すると
いう方法などが提案されているが−これには半導体素子
表面を被覆した後−熱処理する工程が会
必要であるし、半導体素子表面とシランカップリング剤
との接着性が弱いため（＝、耐湿特性の改良が不充分で
あるという不利がある。
本発明はこのような不利を解決した半導体装置に関する
ものであり−これは半導体素子表面または半導体素子と
そのインナーリード部が、一般式％式％
に＼にＲは封止用成形樹脂材料と化学結合が可能な反応
基を少なくとも１個亘する１価の有機基−Ｒは１価θ）
有機基−Ｘはハロゲン原子を除く加水分解可能な基また
Ｇ工水酸Ｘ−ａは１〜３σ〕整数、ｂはＯ〜２の整数で
ａ＋ｂ＝１〜３ ）で示されるオルガノシラン化合物ま
たはその部分加水分解物と硬化促進剤とからなる組成物
で被覆され、さらに成形樹脂材料で封止されてなること
を特徴とするものである。
これを説明すると一本発明者らは耐湿特性の改良された
樹脂封止半導体装置の取得方法について種々検討した結
果、半導体素子表面を上記した一般式で示されるオルガ
ノシラン化合物またはその部分加水分解物（以下これら
を適宜オルガノシラン化合物と略記する）とその硬化促
進剤とからなる組成物（以下これを本シリコーン組成物
と略記する）で予じめ被覆し一ついでこれを樹脂封止す
れば、この半導体素子を含む半導体装置の耐湿性が大巾
ｌ二改良されるはか−この場合には本シリコーン組成ｑ
殖二よる被覆処理後の加熱処理が不要とされるという効
果の与えられ−ることを見出し、これＣ二ついてさらに
研究を進めて本シリコーン組成物の処理を半導体表面の
インナーリード部にも行えばよりよい効果σ）与えられ
ること、またこの硬化促進剤ｆ二ついては特（ニチタン
酸エステル系化合物が有用とされることを確認して本発
明を完成させた。
本発明の半導体装置を得るため（二値用されるオルガノ
シラン化合物は一般式
％式％
式ＨＮ（ＯＨ） −＋
２ ２ ３
Ｈ，Ｎ（ＯＨ２）２ＮＨ（ＯＨ２）３− などで示され
るア基）などで示されるフェノール性７Ｊ＜酸４−Ｈ８
−などのチオール基−ＯＨ＝ＯＨ−などのアルケニ２
ル基−
ＯＨ３
式 ０Ｈ＝Ｏ−０−０（ＯＨ）−で示されるメタ２ ２
３
１
クリロキシ基などで例示される封止用成形樹脂材料と化
学結合が可能な反応基を有する１価の有機基、 Ｒ２は
メチル基、エチル基−グロビル基、ブチル基などのアル
キル基、シクロペンチル基、シクロへキシル基などのシ
クロアルキル基、フェニル基、トリル基などのアリール
基で例示される１価の有機基であり、Ｘはメトキシ基、
エトキシ基。
グロボキシ基などのアルコキシ基、アセトキシ基などの
アシロギシ基、アミノ基、アミノキシ基。
ケトオキシム基、アミド基、アルケニルオキシム基など
で例示される加水分解可能な基または水酸基を示すもの
で、ａが１〜３．ｂが０〜２、ａ＋ｂ＝１〜３とされる
ものであるが−このオルガノシラン化合物はその部分加
水分解物であってもよい。
このようなオルガノシラン化合物またその部分加水分解
としては
ＯＨ
１。
Ｈ，Ｎ（ＯＨ，）２ＮＨ（ＯＨ２）３ｓｉ （ｏａｓ３
）２ 、Ｈ２Ｎ（ＯＨ２）２Ｓｉ（ＱＣ２Ｈ５）３ ＋
Ｈ８（ＯＲ）８１（ＯＯＨ） 。
２Ｂ Ｒ３
０Ｈ＝ＯＨ８ｉ（００ＨＯＯＨ） 、
２ ２４ ８３
Ｈ２Ｎ（ＯＨ２）３Ｓｉ（ＯＯＩ（３）２０８ｉ −（
ＯＯＨ３） ２（ＯＨ２）３ＮＨ２
（ＯＨＯ） Ｓｉ○ＳｉＯ５ｉ（ＯＯＨ３）３−２
０Ｈ
などが例示される。
つぎにこのオルガノシラン化合物を硬化させるための硬
化促進剤は公知のものでよく−これにはイソグロボキシ
チタンートリーイソーステアレー）−ｖ−ｎ−ブトキシ
−ビス（トリエタノールアミナトクチタン、チタニウム
ーイソーグロポキシオクチレングリコレートなどのチタ
ン化合物−酢酸トリブチルすず、安息香酸トリブチルす
ず、ジー（２エチルヘキソン酸）ジメチルすス、マレイ
ン酸ジブチルすずなどの有機すず化合物−アルミニウム
トリエトキシド、アルミニウムトリーイソグロボキシド
などのアルミニウムアルコラード類。
アルミニウムトリアセテート−アルミニウムエトキシド
ジステアレートなどのアルミニウムアシレ−）類、アル
ミニウムアセチルアセトンなどのアルミニウムキレート
化合物などが例示されるが−この硬化促進剤としては次
式
に＼にＲ３は２価の有機基−Ｒ’ ＋ １−＜５ は水
素原子またｆ工１価の有機基＋ ｃ−ｄは０〜４の整数
−ｅ＆Ｘｏ〜２の整数でｃ＋ｄ＋ｅ＝４）で示されるチ
タン化合物また（工その加水分解物が特The present invention relates to a semiconductor device, and particularly to a semiconductor device whose moisture resistance has been improved by a width C2 by coating the surface of a semiconductor element with a silicone compound 9a. Semiconductor elements are generally sealed in ceramic packages or resin for the purpose of protection from the external environment.
As for this sealing material, a synthetic resin composition C2 such as an epoxy resin or a silicone resin is widely used from the viewpoints of reliability, price, and productivity. However, this resin-sealed semiconductor device C2 has a major problem in that its moisture resistance is poor.For this reason, the surface of the semiconductor element must be coated with silane such as epoxy-modified silane before resin-sealing. A method has been proposed in which the surface of the semiconductor element is coated with a coupling agent, heat treated, and then sealed with C2 resin, but this requires a step of coating the surface of the semiconductor element and then heat treating it. Because of the weak adhesion with the silane coupling agent (=improvement of moisture resistance is insufficient), the present invention relates to a semiconductor device that solves this disadvantage. Or, if the semiconductor element and its inner lead portion have the general formula %, R is a monovalent organic group that spans at least one reactive group capable of chemically bonding with the molding resin material for sealing. -R is a monovalent organic group. θ)
The organic group -X is a hydrolyzable group excluding a halogen atom; It is characterized by being coated with a composition consisting of the partial hydrolyzate and a curing accelerator, and further sealed with a molded resin material. To explain this, the inventors of the present invention have conducted various studies on methods for obtaining resin-sealed semiconductor devices with improved moisture resistance characteristics. (hereinafter appropriately abbreviated as organosilane compound) and its curing accelerator (hereinafter abbreviated as the present silicone composition) is pre-coated with a composition, and then this is sealed with a resin. Can the moisture resistance of a semiconductor device including this semiconductor element be greatly improved? In this case, the present silicone composition
We discovered that the present silicone composition has the effect of eliminating the need for heat treatment after the coating treatment, and we conducted further research and applied the treatment of this silicone composition to the inner leads of the semiconductor surface. The present invention was completed by confirming that the curing accelerator (f) provides a better effect (sigma) and that nititanate ester compounds are particularly useful. (Organosilane compounds used in binary terms are phenolic compounds represented by the general formula %, HN(OH) −+ 2 2 3 H, N(OH2)2NH(OH2)3−, etc.). 7J<acid 4-H8
- Thiol group such as -OH=OH- Alkenyl group - OH3 Meta22 represented by the formula 0H=O-0-0(OH)-
3 1 A monovalent organic group having a reactive group capable of chemically bonding with the molding resin material for sealing, exemplified by a cryloxy group, R2 is an alkyl group such as a methyl group, an ethyl group-globyl group, a butyl group, or a cyclopentyl group. group, a cycloalkyl group such as a cyclohexyl group, a monovalent organic group exemplified by an aryl group such as a phenyl group, a tolyl group, and X is a methoxy group,
Ethoxy group. Alkoxy groups such as globoxy groups, acyloxy groups such as acetoxy groups, amino groups, and aminoxy groups. It represents a hydrolyzable group or hydroxyl group exemplified by a ketoxime group, an amide group, an alkenyloxime group, etc., and a is 1 to 3. Although b is 0 to 2 and a+b=1 to 3, this organosilane compound may be a partial hydrolyzate thereof. Such organosilane compounds and their partial hydrolysis include OH1. H,N(OH,)2NH(OH2)3si (oas3
)2 , H2N(OH2)2Si(QC2H5)3 +
H8(OR)81(OOH). 2B R3 0H=OH8i(00HOOH), 2 24 83 H2N(OH2)3Si(OOI(3)208i -(
Examples include OOH3) 2(OH2)3NH2 (OHO) Si○SiO5i(OOH3)3-2 0H. The curing accelerator for curing the organosilane compound may then be any of the known curing accelerators, including isogloboxytitanium triisostearate)-vn-butoxy-bis(triethanolaminenatoctitanium, titanium - Titanium compounds such as isoglopoxyoctylene glycolate - Organotin compounds such as tributyltin acetate, tributyltin benzoate, dimethyltin di(2-ethylhexonic acid), and dibutyltin maleate - Aluminum triethoxide, aluminum triiso Examples include aluminum alcoholades such as globoxide, aluminum acylates such as aluminum triacetate and aluminum ethoxide distearate, and aluminum chelate compounds such as aluminum acetylacetone. R3 is a divalent organic group - R' + 1-<5 is a hydrogen atom or a monovalent organic group + c-d is an integer from 0 to 4 - e & Xo is an integer from 2 to c + d + e = 4) Hydrolyzed titanium compounds and their hydrolysates are
【二好ましいも
のとされ−これによれば半導体素子表面あるいはインナ
ーリード部に非常に接着性のよい被覆層が形成される。
上記式で示されるチタン化合物としてはそのＲがメチレ
ン基、エチレン基−プロピレン基、オクチレン基。
○
Ｒ５が水素原子またはメチル基−イソゲσピル基。
ｎ −フチル基、２−エチルヘキリル基。
−ＯＨＮ（ＯＨＯＨ） 基−メソステアロイル２４ ２
４ ２
基などの１価炭化水素基とされたものが例示される。こ
のチタン化合物またはこの部分加水分解物としては具体
的には式
％式％）
）
）
）
などが例示される。
本発明の半導体装置Ｃ使用される組成物は上記したオル
ガノシラン化合物と硬化促進剤とから構成されるが、こ
れらの配合比はオルガノシラン化合物／硬化促進剤が１
００〜ｌ（重量比〕となるようにすればよく、この範囲
外では半導体素子表面あるいをエインナーリード部との
接着性が低下し、そのために耐湿特性が改善されない。
また１本シリコーン組成物はその安定性の増加と、均一
で薄い被槙層を形成させるという目的で溶剤で稀釈する
ことがよく−これｌＸＯ，０１％未満では耐湿性改善の
効果が小さく、２０％以上とすると均一な被覆層の形成
が困難となるので０．０１〜２０％の範囲ｌ二稀釈され
るが、この溶媒としてはこのオルガノシラン化合物およ
び硬化促進剤の両者を溶解するものから選択することが
よく−これにはトルエン、ベンゼン、ｎ−ヘキサン−ア
ルコール、水すどが例示される。この組成物による半導
体素子表面さらｌ二はそのインナーリード部への被覆は
吹きつけなど適宜の方法で行なえばよいが、この被覆方
法な工吹きつげに限定されるものではなく、どのような
方法で行なってもよい。なお、このように処理された被
覆は風乾で容易Ｃ１同化して被膜を形成するので、これ
を工被覆処理後ｌ：加熱などの後処理をする必要はない
が、この被覆は半導体装置の耐湿特性を改良するという
目的５二おいてその被膜が１μｍ以下の厚さとなるよう
（１行なうことがよい。
本発明の半導体装置は上記したようなオルガノシラン化
合物を含む本シリコーン組成物で半導体素子表面または
半導体素子表面とインナーリード部を被覆したのち、そ
の被覆面をついで樹脂封止することによって作られるが
、この樹脂封止は公知の方法で行えばよく、これに）Ｘ
例えばエポキシ樹脂、シリコーン樹脂−不飽和ポリエス
テル樹脂。
ジアリルフタレート樹脂、ポリフェニレンサルフアイド
樹脂などを使用し、そのトランスファー成形、注型成形
、射出成形などで封止を行なえばよい。
つぎに本発明の半導体装置を図面に二もとづいて説明す
ると、第１図は上記したオルガノシラン化合物を含む組
成物Ｃ二よる処理および樹脂封止をしていない半導体装
置の縦断面図、第２図、第３図は本発明に係わる半導体
装置の部分拡大縦断面図を示したものである。第１図に
１示した半導体装置では一半導体素子■が導電性接着剤
２でタブ（リード）３と接触され、ボンディングワイヤ
ー４でインナーリード部５−アウターリード部６に導通
されるようになっており−これはケース７（二収容され
ている。第２図にはこの半導体装置の＝８４＝÷壱寺半
導体累子１の表面にオルガノシラン化合物を含む組成物
による被膜８が形成され−その周囲が樹脂９で刺止され
た半導体装置が、また第３図にはそのインナーリード部
５の表面にも同様の皮膜８が設けられた半導体装置が示
されている。
つぎＣ：本発明の実施例をあげるが１例中（二おいて使
用したオルガノシラン化合物Ａ１ 〜Ａ５．硬化促進剤
Ｂ −Ｂ はそれぞれ下記の化合物を。
５
またこの耐湿特定を示す数値は樹脂封止半導体装置を１
２１℃、２．１気圧のブレラシャーグツカー試験機中に
２，０００時間放置後Ｃ二おける湿分にもとづくアルミ
ニウム腐蝕による測定個数２０個中の断線不良個数を示
したものである。
（オルガノシラン化合物）
との１／１の混合物、
Ａ、−）Ｉｓ（ＯＨ）Ｓｉ（ＯＯＨ） ＋４ ２３ ３
３
Ａ、−Ａ１とＩ（２Ｎ（ＯＨ２）３Ｓｉ（００２Ｈ，）
３との】／１Ｉ７）混合物
（硬化促進剤）
Ｂ１川Ｔｉ（０−ｎ−０４Ｈ，＞４
Ｂ３ ・・・アルミニウムアセチルアセトンＢ °・°
酢酸トリブチルすず
実施例１〜６．比較例１〜４
オルガノシラン化合物Ａ１〜Ａ、 −ｉ＝化促進剤Ｂ１
〜Ｂ５ とを第１衰ζ二示した割合で混合し、これを
第１衰ζ二示した溶剤で第１表（１示した濃度に稀釈し
た。つぎ（二これを１４ビンＩＣ用フレーム上にセット
したアルミニウム腐蝕試験用半導体素子表面のみ（Ｃ）
、半導体素子表面とインナーリード部（○ ）−または
インナーリード部だけ（０）にスダレ−法で被覆して風
乾し、ついでこれをエポキシ樹脂、シリコーン樹脂で１
１止してからボストキュアーして樹脂封止半導体装置を
作り、これについての耐湿特性をしらべたところ一第１
表に示したとおりの結果が得られた。[Second preferred method] According to this method, a coating layer with very good adhesiveness is formed on the surface of the semiconductor element or the inner lead portion. In the titanium compound represented by the above formula, R is a methylene group, an ethylene group-propylene group, or an octylene group. ○ R5 is a hydrogen atom or a methyl group-isogen σ-pyr group. n-phthyl group, 2-ethylhexyl group. -OHN(OHOH) group -mesostearoyl 24 2
Examples include monovalent hydrocarbon groups such as 4 2 groups. Specific examples of this titanium compound or this partial hydrolyzate include the formula %)))). The composition used in the semiconductor device C of the present invention is composed of the above-described organosilane compound and curing accelerator, and the mixing ratio of these is 1: organosilane compound/hardening accelerator.
00 to 1 (weight ratio); outside this range, the adhesion to the semiconductor element surface or inner lead portion will decrease, and the moisture resistance will not be improved. Materials are often diluted with a solvent to increase their stability and to form a uniform, thin coating layer - less than 1% lXO has little effect on improving moisture resistance, and more than 20% provides a uniform coating. Since it is difficult to form a suitable coating layer, it is diluted to a range of 0.01 to 20%, but the solvent is preferably selected from those that dissolve both the organosilane compound and the curing accelerator. Examples of this include toluene, benzene, n-hexane-alcohol, and aqueous solution.This composition may be applied to the surface of the semiconductor element and the inner lead portion thereof by an appropriate method such as spraying. However, this coating method is not limited to artificial boxwood, and any method may be used.In addition, the coating treated in this way easily assimilates C1 and forms a film when air-dried. After this coating treatment, there is no need to perform post-treatments such as heating, but for the purpose of improving the moisture resistance of semiconductor devices, this coating is made to have a thickness of 1 μm or less (1). The semiconductor device of the present invention may be obtained by coating the semiconductor element surface or the semiconductor element surface and the inner lead portion with the present silicone composition containing the organosilane compound as described above, and then sealing the coated surface with a resin. However, this resin sealing can be done by a known method, and
For example, epoxy resins, silicone resins-unsaturated polyester resins. The sealing may be performed by transfer molding, cast molding, injection molding, etc. using diallyl phthalate resin, polyphenylene sulfide resin, or the like. Next, the semiconductor device of the present invention will be explained based on the drawings. 3 are partially enlarged vertical cross-sectional views of a semiconductor device according to the present invention. In the semiconductor device shown in FIG. This is housed in a case 7. In FIG. 2, a coating 8 of a composition containing an organosilane compound is formed on the surface of the semiconductor device 1. A semiconductor device whose periphery is fixed with resin 9 is shown, and FIG. 3 shows a semiconductor device in which a similar film 8 is also provided on the surface of the inner lead portion 5. Next C: The present invention The following examples are given below: The organosilane compounds A1 to A5 used in Example 2 and the curing accelerators B to B are the following compounds. 1
The figure shows the number of broken wires out of 20 pieces measured due to aluminum corrosion based on moisture after being left in a Brera Schagutzker tester at 21° C. and 2.1 atm for 2,000 hours. (organosilane compound) 1/1 mixture with A,-)Is(OH)Si(OOH) +4 23 3
3 A, -A1 and I(2N(OH2)3Si(002H,)
]/1I7) mixture (hardening accelerator) B1 River Ti (0-n-04H, >4 B3 ... aluminum acetylacetone B °・°
Tributyltin acetate Examples 1-6. Comparative Examples 1 to 4 Organosilane compounds A1 to A, -i = conversion accelerator B1
~B5 were mixed in the ratio shown in the first attenuation ζ2, and this was diluted with the solvent shown in the first attenuation ζ2 to the concentration shown in Table 1 (1). Only the surface of a semiconductor element for aluminum corrosion test set in (C)
, the surface of the semiconductor element and the inner lead part (○) - or only the inner lead part (0) are coated with the Sdale method and air-dried, and then this is coated with epoxy resin or silicone resin.
When I made a resin-sealed semiconductor device by post-curing and post-curing, I investigated the moisture resistance characteristics of this device.
The results shown in the table were obtained.
第１図は未処理の半導体装１４の縦断面図、第２図、第
３図は本発明に係わる半導体装置の部分拡大縦断面図を
示したものである。
ｌ・・・半導体素子、 ２・・・導電性接着剤−３・・
・タブ（リード）、 。
４・・・ボンデングワイヤー、
５・・・インナーリード部、
６・・・アウターリード！、 ７・・・ケース。
８・・・被覆部、 ９・・・樹脂封止部。
特許出願人 信越化学工業株式会社FIG. 1 is a vertical cross-sectional view of an unprocessed semiconductor device 14, and FIGS. 2 and 3 are partially enlarged vertical cross-sectional views of the semiconductor device according to the present invention. l...Semiconductor element, 2...Conductive adhesive-3...
・Tab (lead), . 4... Bonding wire, 5... Inner lead part, 6... Outer lead! , 7...case. 8... Covering part, 9... Resin sealing part. Patent applicant Shin-Etsu Chemical Co., Ltd.
Claims (1)
ード部が、一般式 （ここシニＲ１＆Ｘ封止用成形樹脂材料と化学結合が可
能な反応基を少なくとも１個有する一価の有機基、Ｒは
−価の有機基、Ｘはハロゲンを除く加水分解可能な基ま
たに水酸基−ａは１〜３の整数、ｂは０〜２の整数でａ
＋ｂ＝１〜３）で示されるオルガノシラン化合物または
この部分加水分解物と硬化促進剤とからなる組成物で被
狛され、さら（二成形樹脂材料で封止されてなることを
特徴とする半導体装置。 ２ Ｒ１がエポキシ基、フェノール性水酸基、アミノ基
−チオール基から選択される特許請求の範囲第１項記載
の半導体装置。 ３、 オルガノシラン化合物またはこの部分加水分解物
と硬化促進剤とが重量比で１００〜１とされた組成物が
溶媒で０．０１〜２０重量％に稀釈される特許請求の範
囲第１頌または第２項記載の半導体装置。 ４ 硬化促進剤が一般式 に＼にＲ３は２価の有機基、Ｒ４−Ｒ５は水素原子また
は１価の有機基−ｃ−ｄは０〜４の整数−ｅ＆工０〜２
の整数でｃ＋ｄ＋ｅ＝４）で示されるチタン化合物ある
いはその部分加水分解である特許請求の範囲第１項、第
２項または第３項記載の半導体装置。[Scope of Claims] 1. The surface of the semiconductor element or the surface of the semiconductor element and the inner lead portion are composed of a monovalent organic compound having at least one reactive group capable of chemically bonding with the general formula (herein, the molding resin material for sealing R1 &group; R is a -valent organic group;
+b=1 to 3) A semiconductor characterized by being covered with a composition consisting of an organosilane compound or a partially hydrolyzed product thereof and a curing accelerator, and further sealed with a molded resin material. Device. 2. The semiconductor device according to claim 1, wherein R1 is selected from an epoxy group, a phenolic hydroxyl group, and an amino group-thiol group. 3. An organosilane compound or a partial hydrolyzate thereof and a curing accelerator. The semiconductor device according to claim 1 or 2, wherein the composition having a weight ratio of 100 to 1 is diluted with a solvent to 0.01 to 20% by weight. 4. A curing accelerator in the general formula ＼ R3 is a divalent organic group, R4-R5 is a hydrogen atom or a monovalent organic group, -c-d is an integer from 0 to 4, -e & 0-2
4. The semiconductor device according to claim 1, 2, or 3, which is a titanium compound represented by c+d+e=4) or a partial hydrolysis thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58178781A JPS6070729A (en) | 1983-09-27 | 1983-09-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58178781A JPS6070729A (en) | 1983-09-27 | 1983-09-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6070729A true JPS6070729A (en) | 1985-04-22 |
| JPH0223022B2 JPH0223022B2 (en) | 1990-05-22 |
Family
ID=16054518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58178781A Granted JPS6070729A (en) | 1983-09-27 | 1983-09-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6070729A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1041076A3 (en) * | 1999-03-31 | 2002-04-10 | Dow Corning Toray Silicone Company, Ltd. | Phenol-functional organosilicon compounds and method for the preparation thereof |
| JP2013028713A (en) * | 2011-07-28 | 2013-02-07 | Daicel Corp | Primer composition and optical semiconductor device using the primer composition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4898781A (en) * | 1972-03-28 | 1973-12-14 |
-
1983
- 1983-09-27 JP JP58178781A patent/JPS6070729A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4898781A (en) * | 1972-03-28 | 1973-12-14 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1041076A3 (en) * | 1999-03-31 | 2002-04-10 | Dow Corning Toray Silicone Company, Ltd. | Phenol-functional organosilicon compounds and method for the preparation thereof |
| JP2013028713A (en) * | 2011-07-28 | 2013-02-07 | Daicel Corp | Primer composition and optical semiconductor device using the primer composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0223022B2 (en) | 1990-05-22 |
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