JPS6068620A - Plasma chemical vapor deposition device - Google Patents
Plasma chemical vapor deposition deviceInfo
- Publication number
- JPS6068620A JPS6068620A JP17726083A JP17726083A JPS6068620A JP S6068620 A JPS6068620 A JP S6068620A JP 17726083 A JP17726083 A JP 17726083A JP 17726083 A JP17726083 A JP 17726083A JP S6068620 A JPS6068620 A JP S6068620A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- end cap
- reaction tube
- electrode
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 title description 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 238000005192 partition Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000002787 reinforcement Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 241000257465 Echinoidea Species 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910007258 Si2H4 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- -1 sodium (Na) Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は縦型としたプラズマＣＶＤ装置に係シ、特例生
産性、操作性向上を計った電極構成に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a vertical plasma CVD apparatus, and more particularly to an electrode configuration designed to improve productivity and operability.
（ｂ） 技術の背景
従来のＣＶＤ法に比しプラズマＣＶＤ法はプラズマ中で
の化学反応を利用するため、低温（２００〜３５０℃）
での成膜が可能であり 厚膜でしかも良質のシリコン９
化膜（Ｓｉ２Ｈ４）が形成でき、最終的な保護膜として
有効である。(b) Background of the technology Compared to the conventional CVD method, the plasma CVD method utilizes a chemical reaction in plasma, so it requires a lower temperature (200 to 350°C).
It is possible to form a thick film using high-quality silicon9.
A chemical film (Si2H4) can be formed, which is effective as a final protective film.
しかもナトリウム（Ｎａ）等のアルカリ金属に対する耐
蝕性及び耐湿性に優れた特性を示すため、特にモールド
パッケージ型の半導体装置における半導体デバイスの信
頼性を向上させ得る最終的な保護膜として多用されてい
る８
プラズマＣＶＤ装置にはホットウォール形の他に平行平
板形、円筒電極形等がある。Moreover, it exhibits excellent corrosion resistance and moisture resistance against alkali metals such as sodium (Na), so it is often used as a final protective film that can improve the reliability of semiconductor devices, especially in mold package type semiconductor devices. 8 Plasma CVD equipment includes hot wall type, parallel plate type, cylindrical electrode type, etc.
（ｃ） 従来技術と問題点
第１図は従来のホットウォール形プラズマＣＶＤ装置を
示す構成図、第２図は縦形構造としたホットウォール形
プラズマＣＶＤ装置の一例を示す構成図である。(c) Prior Art and Problems FIG. 1 is a block diagram showing a conventional hot wall type plasma CVD apparatus, and FIG. 2 is a block diagram showing an example of a hot wall type plasma CVD apparatus having a vertical structure.
第１図において反応管２の外側に加熱ヒータ３を配置し
たホットウォール（Ｈｏｔ−ｗａｌ ｌ ）減圧方式の
プラズマＣＶＤ装置１であって、反応管２内に高周波用
電極４，５が対向して配置される。この電極４．５に外
部の高周波電源６がコネクタ７．８を介して接続され、
この電極間にプラズマが発生する。半導体ウェハ９は電
極間に配した基板ホルダー１０に図のように取付け、電
極４．５とともに反応管２内の所定位置に配置される。In FIG. 1, there is shown a plasma CVD apparatus 1 of a hot-wall depressurization type in which a heater 3 is disposed outside a reaction tube 2, and high-frequency electrodes 4 and 5 are opposed to each other inside the reaction tube 2. Placed. An external high frequency power source 6 is connected to this electrode 4.5 via a connector 7.8,
Plasma is generated between these electrodes. The semiconductor wafer 9 is attached to a substrate holder 10 placed between the electrodes as shown in the figure, and placed at a predetermined position in the reaction tube 2 together with the electrodes 4.5.
この場合電極４，５の先端はコネクタ７．８に挿着され
、外部電源と結合する。In this case, the tips of the electrodes 4, 5 are inserted into a connector 7.8 and connected to an external power source.
エンドキャップ１１を閉じて反応管２内を密閉し、ヒー
タ加熱により反応管内部及び配設した半導体ウェハ９を
一定温度に加熱し、反応管２の終端に備えた排気口１２
より一定圧に減圧排気する。The end cap 11 is closed to seal the inside of the reaction tube 2, and the inside of the reaction tube and the disposed semiconductor wafer 9 are heated to a constant temperature by heating the reaction tube 2, and the exhaust port 12 provided at the end of the reaction tube 2 is heated.
Evacuate to a more constant pressure.
しかる後に反応ガスを導入口１３より導入することによ
り反応ガスはガス導入口１３より排気口１２へと拡散さ
れ、プラズマ中の電気エネルギーによシ反応ガスは活性
化し、半導体ウエノ・９上に所望の薄膜を形成させる。Thereafter, by introducing the reactive gas through the inlet 13, the reactive gas is diffused from the gas inlet 13 to the exhaust port 12, and the reactive gas is activated by the electrical energy in the plasma, and the desired gas is deposited on the semiconductor wafer 9. Form a thin film.
このため熱的エネルギーによって反応を促進させる通常
のＣＶＤ法に比し低温化が可能となる。Therefore, the temperature can be lowered compared to the usual CVD method in which the reaction is promoted by thermal energy.
しかしこのように構成されるプラズマＣＶＤ装置では半
導体ウェハ９の大口径化に伴い電極も大型化し、相対的
が荷重増となり装置構成上限度があり、又外部電極との
良好なコンタクトが得難い。However, in a plasma CVD apparatus constructed in this manner, the electrodes also become larger as the diameter of the semiconductor wafer 9 increases, and the relative load increases, so there is an upper limit to the structure of the apparatus, and it is difficult to obtain good contact with external electrodes.
これはコネクタ部の汚染によりコンタクトが不安定とな
るからである。即ち薄膜成長時同質の化金物がコンタク
ト部にも被着形成されコンタクト不安定となる。その改
善策として第２図に示す縦形構造のプラズマＣＶＤ装置
を本発者が先に提案している。This is because the contact becomes unstable due to contamination of the connector part. That is, during thin film growth, a homogeneous metal compound is also deposited on the contact portion, making the contact unstable. As an improvement measure for this problem, the present inventor has previously proposed a plasma CVD apparatus having a vertical structure as shown in FIG.
対向する＠Ｊ４，５をエンドキャップ１１に固定し、外
部電極６に直結し、図示するように棚状の基板ホルダー
１０に半導体ウニ／ＸＯを載置する構造としたものであ
る。このように構成する縦形プラズマＣＶＤ装置を更に
生産性、操作性を高めた装置構成とすることを提案する
ものである。Opposing @J4, 5 are fixed to the end cap 11, directly connected to the external electrode 6, and the semiconductor urchin/XO is placed on a shelf-shaped substrate holder 10 as shown in the figure. It is proposed that the vertical plasma CVD apparatus constructed in this manner be configured to further improve productivity and operability.
（ｄ） 発明の目的
本発明は上記の点に鑑み対向する電極を二系列化し且つ
分割する電極構造を提供し、生産性、操作性の向上を計
った縦形プラズマＣＶＤ装＠を得ることを目的とする。(d) Purpose of the Invention In view of the above points, the present invention provides an electrode structure in which opposing electrodes are divided into two series and divided, and an object of the present invention is to obtain a vertical plasma CVD system with improved productivity and operability. shall be.
（ｅ） 発明の構成
上記目的は本発明によれば対向する電極を二系列化し、
終端をエンドキャップに固定して、縦形の反応管内に収
容する該電極を分割構造とし、被処理試料を該電極の側
面に載置するよう構成されることによって達せられる。(e) Structure of the invention According to the present invention, the above object is to divide the opposing electrodes into two series,
This is achieved by fixing the terminal end to an end cap, making the electrode housed in a vertical reaction tube into a divided structure, and configuring the sample to be processed to be placed on the side of the electrode.
（ｆ） 発明の実施例 以下本発明の実施例を図面により詳述する。(f) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第３図は本発明の一実施例である縦形プラズマＣＶＤ装
置を示す構成図、第４図は第３図におけるエンドキャッ
プに固定配置した電極を示す平面図である。FIG. 3 is a block diagram showing a vertical plasma CVD apparatus according to an embodiment of the present invention, and FIG. 4 is a plan view showing electrodes fixedly arranged on the end cap in FIG. 3.
第３図において対向する電極を二系列とし、第１の対向
電極２４，２イ及び第２の対向型ｆｉ２５゜２５′をそ
れぞれエンドキャップ３１に固定シ、コの電極に仕切板
３２を固定するとともに分割可能に構成するものである
。In FIG. 3, there are two series of opposing electrodes, and the first opposing electrodes 24, 2a and the second opposing type fi 25゜25' are fixed to the end cap 31, respectively, and the partition plate 32 is fixed to the electrodes of shi and ko. It is structured so that it can be divided into two parts.
この電極２４．２４’、２５，２ゴに図のように半導体
ウェハ２９を載置するが外側の電極２４゜２５には背面
に、内側電極２４’、２５’には両面配置し、エンドキ
ャップ３１を閉じて反応管２２内に収容し、外側電極２
４．２５に外部電源２６を接続する。A semiconductor wafer 29 is placed on these electrodes 24, 24', 25, and 2 as shown in the figure, with the outer electrodes 24 and 25 placed on the back, and the inner electrodes 24' and 25' on both sides, with end caps placed. 31 is closed and housed in the reaction tube 22, and the outer electrode 2
4. Connect external power supply 26 to 25.
この二系列とした電極を第４図に示すように導電材３３
で結線するが例えば銅板等をエンドキャップ３１に貼着
して溶接又は半田付等により電極間を結合することによ
り外部電源２６を共有させることができる。These two series of electrodes are connected to a conductive material 33 as shown in FIG.
For example, the external power source 26 can be shared by attaching a copper plate or the like to the end cap 31 and connecting the electrodes by welding or soldering.
このように構成することにより処理能力を増大させ生産
性を向上させるに有効である。This configuration is effective in increasing processing capacity and improving productivity.
第５図は本発明の一実施例である分割構造とした電極を
示す側面図であり（イ）は接続部を示す図、←）は半導
体ウェハを載置した電極を示す図である。FIG. 5 is a side view showing an electrode having a split structure according to an embodiment of the present invention, (a) is a view showing a connecting portion, and (←) is a view showing an electrode on which a semiconductor wafer is placed.
（イ）図において電極２４〜２５間を支持板３２で補強
し、先端に凹凸部を形成しはめ合い嵌合により結合機構
としだものであり予じめ分割した電極に半導体ウニ・・
２９を載置し、結合させるもので操作性向上を計ったも
のである。また半導体ウニ・・２９は←）図に示すよう
に電極２５′の下部に（Ｉｉｆｉえた突起３４に係止さ
せるものであシ、電極の平担面にウェハ背面が接しずれ
たシはずれることはない０
このような電極構造とすることにより生産性及び操作性
を向上させることができる。(a) In the figure, the space between the electrodes 24 and 25 is reinforced with a support plate 32, and a concave and convex portion is formed at the tip to form a coupling mechanism by fitting.
29 is mounted and connected to improve operability. In addition, the semiconductor urchin...29 is fixed to a protrusion 34 formed at the bottom of the electrode 25' as shown in the figure, and will not come off if the back surface of the wafer comes into contact with the flat surface of the electrode. No 0 With such an electrode structure, productivity and operability can be improved.
（ｇ） 発明の効果
以上詳細に説明したように本発明に示す柳形プラズマＣ
ＶＤ装置とすることにより生産性、操作性の向上が得ら
れる。(g) Effect of the invention As explained in detail above, the willow-shaped plasma C shown in the present invention
By using a VD device, productivity and operability can be improved.
第１図は従来のホットウォール形プラズマＣＶＤ装置を
示す構成図、第２図は縦形構造としたプラズマＣＶＤ装
置の一例を示す構成図、第３図は本発明の一実施例であ
る縦形プラズマＣＶＤ装置を示す構成図、第４図は第３
図におけるエンドキャップに固定配置１シた電極を示す
平面図、第５１．’Ｊは本発明の一実施例である分割構
造とした５１〔極を示す側面図であり、０）は接続部を
示す図、（０）は半導体ウェハを載置した電イヴを示す
ＩＭＩである。。
図中１・・・プラズマＣＶＤＫｌｆ＋、２．２２・・・
反応管、３・・・ヒータ、４．５．２４．２４’、 ２
５．２ゴ・・・電極、６．２６・・・外部電源、７，８
・・・コネクタ、９．２９・・・半導体ウェハ、１０・
・・基板ホルダー、１１．３］・・・エンドキャップ、
３２・・・支持板、３３・・・導油、材、手ｌ閉
峯３昭Fig. 1 is a block diagram showing a conventional hot wall type plasma CVD apparatus, Fig. 2 is a block diagram showing an example of a plasma CVD apparatus with a vertical structure, and Fig. 3 is a block diagram showing a vertical plasma CVD apparatus according to an embodiment of the present invention. A configuration diagram showing the device, Figure 4 is the third
51. A top view showing the electrode fixedly arranged on the end cap in Figure 51. 'J is a side view showing a 51[pole] with a split structure according to an embodiment of the present invention, 0) is a view showing a connection part, and (0) is an IMI showing an electric wave on which a semiconductor wafer is placed. be. . In the figure 1...Plasma CVDKlf+, 2.22...
Reaction tube, 3... Heater, 4.5.24.24', 2
5.2 Go...electrode, 6.26...external power supply, 7,8
... Connector, 9.29 ... Semiconductor wafer, 10.
... Board holder, 11.3] ... End cap,
32...Support plate, 33...Oil guide, material, hand closing mine 3aki
Claims (1)
定して、縦形の反応管内に収容する該電極を分割構造と
し、被処理試料を該電極の側面に載置するよう構成され
ていることを特徴とするプラズマＣＶＤ装置The electrodes are divided into two series facing each other, the terminal end is fixed to an end cap, and the electrode is housed in a vertical reaction tube, and the electrode is divided into two series, and the sample to be processed is placed on the side of the electrode. Features of plasma CVD equipment
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17726083A JPS6068620A (en) | 1983-09-26 | 1983-09-26 | Plasma chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17726083A JPS6068620A (en) | 1983-09-26 | 1983-09-26 | Plasma chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6068620A true JPS6068620A (en) | 1985-04-19 |
Family
ID=16027956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17726083A Pending JPS6068620A (en) | 1983-09-26 | 1983-09-26 | Plasma chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068620A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
-
1983
- 1983-09-26 JP JP17726083A patent/JPS6068620A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
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