JPS606487B2 - Beam shaping optical system - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical system that shapes diverging light from an exit surface of a semiconductor laser.

The emitted light of semiconductor lasers, which are called diode lasers, injection lasers, etc., generally have different divergence angles in orthogonal directions.

Furthermore, there are semiconductor lasers that emit beams whose divergence origins differ in orthogonal directions. processing such semiconductor laser light using rotationally symmetric lenses, i.e. lenses with equal focal lengths in orthogonal directions;
That is, it is impossible to make the light parallel or to make it into a circular spot light. It is therefore an object of the present invention to provide an optical system for processing beams from semiconductor lasers.

The present invention will be described below with reference to the accompanying drawings. Figure 1 is a diagram showing the state of divergence of a beam from a semiconductor laser.
FIG. 1a is a top view of the semiconductor laser, and FIG. 1b is a side view.

In the figure, 1 is a semiconductor laser, and 2 is a bonding surface. 3 is a beam from the exit surface of the semiconductor laser 1;

The origin of divergence of this beam in the direction parallel to the joint surface (hereinafter referred to as the horizontal direction) is indicated by 4, and the divergence origin in the direction perpendicular to the joint surface (hereinafter referred to as the longitudinal direction) is indicated by 5. ing. These divergence origins 4 and 5 are located at different positions on the common bisector of the divergence angle in the vertical and horizontal directions, respectively. The horizontal divergence origin 4 is located away from the exit surface, and the vertical divergence origin is located near the exit surface. A rotationally symmetric lens is not effective in processing this beam into a parallel beam and a circular imaging spot.

That is, it is not possible to make this beam into a parallel beam in both longitudinal and lateral directions, or into a spot imaged in both directions, by means of a rotationally symmetrical lens.
The present invention relates to a beam shaping optical system for processing such beams. In the present invention, beams having different origins of divergence in the vertical and horizontal directions are processed by using optical systems with different focal lengths in the vertical and horizontal directions. As the optical system having different focal lengths in the vertical and horizontal directions, an optical system including at least one cylindrical system, such as a cylindrical lens, a cylindrical concave mirror, or a toric lens, can be considered.

In the following description, a cylindrical lens will be exemplified and explained for convenience of explanation.

``Beam processing will be explained using examples of collimation and imaging spot creation.First, we will explain the case of collimating a beam from a semiconductor laser.

The simplest configuration of a beam shaping optical system for collimating the beam from a semiconductor laser is to arrange two cylindrical lenses so that their generating lines are perpendicular to each other on the common bisector of both divergence angles. The focal point of is aligned with the origin of divergence.

Furthermore, it is possible to collimate the beam from the semiconductor laser using one cylindrical lens and one rotationally symmetrical lens. That is, with the bisector line as the optical axis, one cylindrical lens, a rotationally symmetrical lens, is arranged on the optical axis, and the cylindrical lens is used to align the origin of one divergence with the other origin of divergence. This embodiment is shown in FIG. 2, in which it is possible to collimate the beam from a semiconductor laser by making the origin the focal point of a rotationally symmetrical lens. In FIG. 2, 6 is a cylindrical concave lens, and 7 is a rotationally symmetrical lens.

The cylindrical concave lens 6 is arranged on the common bisector 8 of the diverging beam 3 so that its generatrix is orthogonal to a plane parallel to the cemented surface 2. That is, the cylindrical concave lens 6 is arranged so as not to affect the vertical divergence, but to affect the horizontal divergence. The cylindrical concave lens 6 moves the horizontal divergence origin 4 to the vertical divergence origin 5. Therefore, by aligning the optical axis of the rotationally symmetrical lens 7 with the line 8 and aligning its focal point with the position of the divergence origin 5, a beam 9 parallel to both the vertical and horizontal directions can be obtained. FIG. 3 shows an embodiment in which the divergence origin 5 is moved to coincide with the divergence origin 4. In FIG. In this embodiment, a convex cylindrical lens 10 is arranged so as to have refractive power in the vertical direction.

In this lens 10, the vertical divergence origin 5 coincides with the horizontal divergence origin 41. Further, the rotationally symmetrical lens 11 is configured so that its focal point coincides with the divergence origin 4. Therefore, a beam 9 parallel to both the vertical and horizontal directions is obtained. In Figure 4, two cylindrical lenses whose generating lines are orthogonal to each other are used, and the divergence origins 4 and 5 are moved together.
An embodiment is shown in which semiconductor laser light is collimated by a rotationally symmetrical lens that is aligned at a certain point and has a focal point on this certain point.

In the figure, reference numeral 12 denotes a convex cylindrical lens for moving the vertical divergence origin 6 to an intermediate point 13 on the line 8 between the divergence origin 5 and the horizontal divergence origin 4. 14 is a concave cylindrical lens for moving the lateral divergence origin 4 to the intermediate point 13.

15 is a rotationally symmetrical lens whose focal point coincides with the intermediate point 13.

This arrangement therefore provides a beam 9 that is parallel to both the vertical and horizontal directions. As mentioned above, in the third embodiment, both the first and second lights shown in FIGS. In the fourth and fifth embodiments shown in FIGS. 6 and 6, flattening in one direction is performed by a rotationally symmetrical lens, and parallelization in the other direction is performed by a cylindrical lens.

In FIG. 5, reference numeral 16 denotes a rotationally symmetrical lens whose focal point coincides with the divergence origin 5 in the vertical direction.

Therefore, the beam from the semiconductor is collimated in the longitudinal direction by this rotationally symmetrical lens 16. On the other hand, since the lateral divergence origin 4 is located far from the focal point of this rotationally symmetrical lens 16, this beam 3 is converged in the lateral direction. By means of a cylindrical lens having a focal point at this convergence point, the beam 3 is also collimated in the transverse direction. However, with this configuration, the optical system cannot be made compact, so a concave lens 17 is placed after the rotationally symmetrical lens 16, as shown in FIG. A convex cylindrical lens 19 is arranged after this concave lens.
In this way, parallelization in the vertical direction can be performed by the rotationally symmetrical lens 16, and parallelization in the horizontal direction can be performed by the rotationally symmetrical lens 16, the concave cylindrical lens 17, and the convex cylindrical lens 18. A configuration different from the example is shown.

The rotationally symmetrical lens 19 is arranged so that its focal point coincides with the origin 4 of divergence in the lateral direction.

This rotationally symmetrical lens 19 therefore collimates the lateral divergence of the beam 3. On the other hand, in the vertical direction, the beam 3 is in a diverging state because the divergence origin 6 is located closer to the focal point. This diverging beam is parallelized by two convex and concave silisodrical lenses 20. According to the first to fifth embodiments described above, it is possible to make the beam from the semiconductor laser parallel in both the vertical and horizontal directions.

However, the obtained parallel beam may have an elliptical cross-sectional shape as shown in FIG.

An optical system for converting this beam having an elliptical cross-section into a predetermined cross-sectional shape will be described below. In the explanation, it is assumed that the predetermined cross-sectional shape is axially rotationally symmetrical. This is because the case where this parallel beam is imaged by a rotationally symmetrical lens is considered. In Figure 8, 22 is vertical,
This is an optical system for collimating semiconductor beams with different focal lengths in the lateral direction.

This optical system 22 may be any of the previous embodiments. 23 is an anamorphic afocal optical system.

, and this anamorphic afocal optical system changes the beam, that is, it narrows or expands one beam to match the other beam.

In the embodiment shown in FIG. 8, the beam in the vertical direction is reduced vertically by the anamorphic afocal optical system 23, and the beam in the horizontal direction is reduced.
A beam 24 whose cross section is rotationally symmetrical is obtained. In addition, it is also possible to arrange two anamorphic afocal optical systems orthogonally to change the beam in both directions, for example to expand the horizontal direction and create an intermediate beam with stripes in all directions. A prism anamorphic afocal optical system and a cylindrical anamorphic afocal optical system are applicable as the anamorphic afocal optical system used in the embodiment shown in Fig. 8. A seventh embodiment using an optical system is shown. In the figure, 25 and 26 are convex cylindrical lenses arranged orthogonally, and 27 is a rotationally symmetrical lens. The beam 3 from the semiconductor laser has a cylindrical shape in the lateral direction. The parallel beam 28 is collimated by a lens 26 and a rotationally symmetrical lens 27, and is collimated in the vertical direction by a cylindrical lens 25 and a rotationally symmetrical lens 27.This parallel beam 28 is collimated by a prism anamorphic afocal optical system 29 that has a reduction effect in the vertical direction. The afocal system 29 reduces stripes in the beam in the longitudinal direction and provides a rotationally symmetrical parallel beam.An example of application of the embodiment shown in FIG. 9 is as follows.

Application example BK7 glass (refractive index approximately 1.51) diameter 3 willow and 20
One side of the skin-shaped cylindrical glass rod was removed by cutting or grinding, and then sufficiently polished to produce cylindrical lenses with a wall thickness of 1.5 skin and a 3-lens length, respectively.

The convex lens with a focal length of 10 Yanagi is a rotationally symmetric lens and is a commonly used lens. Two simple prisms were used as the prisms.

The apex angle is 35o, and the combination of 2 pieces makes the beam about i
'5 can be compressed. These were arranged as shown in FIG.

The distance between the semiconductor laser and the cylindrical lens 25 is one rib, and the distance between the cylindrical lens 25 and the cylindrical lens 26 is one.
．． 5 side, from the center (principal plane) of the lens 27 to the cylindrical lens 2
The interval up to 6 was set to the 2.2 side. The position of the prism does not matter. These optical systems were sufficiently prevented from reflecting against the wavelength of 8500A of the semiconductor laser.

As a result, it was found that the size of the optical system is sufficiently small and commensurate with the size of the semiconductor laser, and that the loss is only 30% and high efficiency can be obtained. Furthermore, the beam has a nearly circular shape, and as a result of focusing, an extremely high beam power density can be achieved. In the embodiments shown in FIGS. 8 and 9, an anamorphic afocal optical system is used to transform the afocal light from the optical system (1st to 5th embodiments) for collimating semiconductor laser light into an afocal light. Although the cross-sectional shape of the light east is set to a predetermined cross-sectional shape, it is possible to obtain a predetermined cross-sectional shape by appropriately setting the vertical and horizontal focal lengths of the optical system itself for collimating the semiconductor laser beam.

Now, the vertical divergence angle of the beam from the semiconductor laser is 3
If the vertical focal length of the optical system for collimating the semiconductor laser beam is f, then the vertical height a of the parallel light from the optical system for collimating the semiconductor laser beam with respect to the optical axis is f.
It can be expressed as gisinas.

Further, if the lateral divergence angle is 8.degree. and the lateral focal length is f, then the lateral height h can be expressed as f.sm.8. Therefore, in order to obtain a parallel beam with a desired vertical and horizontal ratio, the focal lengths ff and f may be appropriately set.

This embodiment is shown in FIG. Therefore, the first
Please refer to the explanation of Figure 5. Next, a case will be described in which parallel light from an optical system for collimating semiconductor laser light is imaged by a rotationally symmetric lens, that is, an optical system having equal focal lengths in the vertical and horizontal directions.

When collimated light is imaged by a rotationally symmetric lens, it is desirable that the parallel light be axially rotationally symmetrical.

When the radius of this parallel light is r and the aperture radius of the rotationally symmetrical lens is R, it is desirable for energy efficiency to be in the vicinity of r/R=0.9. This will be explained above. Observation plane parallel to the emission plane of the semiconductor laser (f, ,
The iso-intensity curve of the diverging light from the semiconductor laser on (2) is an ellipse as shown in FIG. Therefore, this divergent light east is given by the light intensity 1(f,,ri, )have. Here, with the light intensity at the observation origin, a
,,Q respectively mean the position where the light intensity on the reason is 1/e2 of the intensity on the observation origin. Now, if the total energy from the semiconductor laser is V, then V
three,.

It is a game [--2 {Kame 10#}] df・d force・ku2).
From this formula (2), 2V L=---'3' alq can be easily derived.

This lo indicates the central intensity of the divergent light from the semiconductor laser. The divergence characteristics expressed by equation {1) are illustrated in the respective directions of f, , and r, as shown in FIGS. 11a and 11b.

As shown in Figure 2 of the wing, a.
The angle that a ray of light that reaches a point at a distance from the optical axis makes with the optical axis is 8f, and the angle that a ray of light that reaches a point on the vehicle that is a distance of b from the optical axis makes with the optical axis is 8f, and from the observation plane The distance to the light emission origin S in the f direction is S, and the distance to the light emission origin S2 in the ri direction is S.
If it is 10△S, it is {Takashi ≧ Mimi Nozaza) 8 Sword Immortal Buddha on the side.

On the other hand, the focal length of the condensing system due to the refraction (reflection) action of the multidirectional condensing system Lc in Fig. 13 is ff, and the refraction in the sword direction (
Let f be the focal length of the condensing system Lc due to the (reflection) action.

Due to the difference in refraction (reflection) in these two directions, it is possible to make the light output from the condensing system a parallel light. At that time, the strength in the direction and the direction is 1/e2 of medium
If the positions are at distances r and r from the optical axis, respectively, rf=f and sinaf rh=f and sin8.

To make the intensity distribution equal in both directions, it is sufficient that rf=r...r Therefore, f sinaf=fri sin8
ri (go r)...'51 From the {4} and {5} formulas, {auspicious angle cosmic angle equal order ÷; 7/b---shelf can be obtained.

Therefore, a. , 0, S By measuring the mother ΔS and setting r, it is possible to determine f and f. The setting of r is closely related to the aperture R of the imaging lens.

In other words, if the parallel light beam emitted from the condensing system has a cross-sectional light intensity distribution that is a glass distribution, and the position of the intensity of 1 no e2 is at a distance r from the optical axis with respect to the central intensity, then the parallel light beam is converted into an aperture. When an image is formed by an imaging lens with a radius of R, "The subsequent central intensity J is L'=C.

R2-d-length'r2]2...A is expressed as follows. however,
C is a constant. From formula {7}, lo' becomes maximum when the value of the ratio (r/R) is r/R=0.892...(8
} when the value becomes close to .

In other words, if the condition for the parallel light emitted from the condensing system is that the east diameter of the light whose light intensity is 1/e2 or more is 89.2% of the aperture diameter of the imaging lens, then the imaging center intensity can be maximized.

(6}, {8} From the formula, ff=o.892M;; Finish/a, fri=○-892Rzo(S+△S)2 cross b/b・-...
-- Obtain (9}.

In other words, if the quantities a, b, , S, and ΔS that indicate the light emission characteristics of the light source are determined by measurement, and the aperture radius R of the imaging lens is determined, then the refraction (f) of the condensing system in both directions ( The focal lengths ff and f due to the reflection) action can be determined.

FIG. 14 shows an optical system that images a beam from a semiconductor laser in a circular shape with energy efficiency.

This is an optical system that collimates the beam 3 from the semiconductor laser 1.

31 is a rotationally symmetrical lens that forms an image of the parallel light from this optical system 30.

The aperture radius of this lens 31 is R. Further, the optical system 30 emits a parallel beam 32 having a circular cross section with a radius r. Therefore, this optical system 30 may be any of the previous embodiments. And r/R is 0.892. FIG. 15 shows a more specific optical system than the eighth embodiment shown in FIG. 14.

The optical system designated by the reference numeral 30 in FIG. 14 is composed of a rotationally symmetrical lens 33 in FIG. 15, and concave and convex cylindrical lenses 34 and 35 whose generatrix lines coincide with the longitudinal direction. The focal point of the rotationally symmetrical lens 33 is the vertical divergence origin S. matches. Moreover, this optical system 33, 34,
The vertical focal length ff and horizontal focal length f of 35 are respectively ff:o. 892M army rub/a,fri=0.892Rノ(S 1△S) 2 10b,'
/b, is.

An optical system having this focal length is obtained as follows.

First, the focal length f of the rotationally symmetrical lens 33 is set. That is, since only the rotationally symmetrical lens 33 determines the longitudinal focal length of the optical systems 33, 34, and 35, f. =ff. That is, the focal length arc of the rotationally symmetrical lens 33. 892M Gun Ichicho/a・Deal. On the other hand, the lateral composite focal length f of the optical systems 33, 34, and 35 can be expressed as follows.

Note that 4 is the focal length of the concave cylindrical lens 34, 5 is the focal length of the convex cylindrical lens 35, and 5 is the focal length of the convex cylindrical lens 35. The distance between the principal points of the lenses 33 and the cylindrical lens 34, part 2
are the distances between the principal points of the cylindrical lenses 34 and 35, respectively. It represents. Further, if the distance from the principal point of the rotationally symmetrical lens 33 to the divergence origin S2 of the light source is f and 10ΔS, then the conditions for making the output light east a parallel beam of light are as follows.

The cylindrical light source is arranged so that one of the divergence points S, of the light source coincides with the focal point of the rotationally symmetrical lens 33, and another divergence point S2 coincides with the focal position of the composite system made up of the rotationally symmetrical lens 33 and the cylindrical lenses 34 and 35. 34,3
It is possible to select a principal point distance of 5.

In other words, from equations (10) and (11) get.

Here, if ΔS is small, the light emitted from the rotationally symmetrical lens 33 is almost a parallel light, so if we want to magnify this light by 8 times using a cylindrical system and emit it, we need 2=6f illusion. ...(13)

This 8 has a meaning, and depending on the position a,,b, where the divergence intensity of the light source on the observation surface is 1/e2 of the center, the shift amount of the origin of the light source's divergence △S force, when is expressed as (14).

However, prison.・When ra2<0, 3<0 "ra.・f22>0
When 8>0. Therefore, the value shown in equation (14) is adopted as 8, and equations (12) and (13) are obtained.

On the other hand, conditional expressions {9} and (10
) from Eq.

Therefore, ``From equations (15) and (16), tf2 and tf2
can be determined.

Roughly speaking, f22 can be determined from equation (13), and the configuration of the cylindrical system can be set. Rotationally symmetrical lens 3
3 and the distance between the principal points of the cylindrical lenses 34 and 35,
may be set arbitrarily.

As described above, the beams emitted from the optical systems 33, 34, and 35 can be parallel and have a substantially circular cross section, and the intensity at the imaging center can be substantially maximized.

A primary embodiment is shown in FIG.

The optical system designated by the reference numeral 30 in FIG. 14 is composed of a rotationally symmetrical lens 36 and cylindrical lenses 37 and 38 whose generatrix directions coincide with the lateral direction in FIG. 6. The axis of the rotationally symmetrical lens 36 coincides with the lateral divergence origin S2. The vertical focal length f and the horizontal focal length f of these optical systems 36, 37, and 38 are respectively f.
f=o. An optical system having this focal length can be found as follows.

First, the focal length f of the rotationally symmetrical lens 36 is set. In other words, since it is only the rotationally symmetrical lens 36 that determines the horizontal focal length of the optical systems 36, 37, and 38, f
,=f must be true. In other words, the focal length of the rotationally symmetrical lens 36 is approximately 892 m/q. On the other hand, it is possible to express up to the longitudinal composite focal length f' of the optical systems 36, 37, and 38.

In addition, 7 is the focal length of the convex cylindrical lens 37, 8 is the focal length of the concave cylindrical lens 38, and the distance between the principal points of the lenses 36 and cylindrical lens 37 is 2.
represent the distance between the principal points of the cylindrical lenses 37 and 38, respectively. Further, if the distance from the principal point of the rotationally symmetrical lens 36 to the divergence origin S of the light source is f, - ΔS, then the conditions for making the emitted light beam parallel are as follows.

From equations (18) and (19), cylindrical lens 37
, 38, the distance between the principal points 2 is expressed as - in equation (12), △S
Exactly the same results are obtained except that ΔS is replaced.

Here, assuming that △S is small, the light flux emitted from the rotationally symmetric system is considered to be almost parallel.
...(20) may be used.

Here, 8 is the table BT3 (a.
It is expressed as (21).

However, when 7 and 8<0, 8<0, and when 71f>0, 6>0. If you do that, part 2 is (15)
In the equation, ΔS is replaced with -ΔS, but the equation is exactly the same.

On the other hand, conditional expression (2) and equation (18) that maximize the intensity at the center of image formation are obtained.

Therefore, from equations (15) and (22), f2. and evening 2
can be determined.

Furthermore, 2 can be determined from equation (20) and the configuration of the cylindrical system can be set. In this case as well, as in the case of FIG. 15, it may be set arbitrarily.

As described above, in this case as well, the beams emitted from the condensing system can be parallel and have a substantially circular cross section, and the intensity at the imaging center can be approximately maximized. The difference between the ninth embodiment shown in Fig. 15 and the first ship embodiment shown in Fig. 16 is the equation (17) and (
As can be seen from equation 23), this is due to the difference in focal length of rotationally symmetric systems.

In other words, if b, < a, in the case of the ninth embodiment, the focal length of the rotationally symmetric system is larger than that in the tenth embodiment, which has the advantage of allowing a large differential distance between the rotationally symmetric system and the light source. There is. For example, in practice, if the method of the first ship embodiment is selected and the condensing optical system is set, and the differential distance of this rotationally symmetric system is too small, the method of the ninth embodiment may be used. There is an option to adopt it.

FIG. 17 shows an eleventh embodiment.

39 is a concave cylindrical lens whose generatrix direction coincides with the longitudinal direction.

This cylindrical lens 39 causes the horizontal divergence origin S2 to coincide with the vertical divergence origin S. 40 is a rotationally symmetrical lens whose focal point coincides with the vertical divergence origin S.

This lens 40 also makes the beam from the semiconductor laser parallel in both the vertical and horizontal directions. The vertical height of the parallel light from the lens 40 with respect to the optical axis is 0.892R. However, the lateral height is less than 0.892R. Therefore, the parallel light from the lens 40 is expanded only in the lateral direction by the cylindrical anamorphic focal optical systems 41 and 42 to a height of 0.89 order. In this embodiment, a cylindrical anamorphic afocal optical system is shown as the lateral beam expansion system, but a prism anamorphic afocal optical system 43 may also be used as shown in FIG. FIG. 19 is an example in which the optical system of the ninth embodiment of the present invention is applied to a scanning system.

44 is a deflector that scans parallel beams, and 45 is a recording medium that performs sub-scanning in a direction perpendicular to the scanning direction to record an image.

All the semiconductor lasers mentioned so far have different origins of divergence in the vertical and horizontal directions, and different angles of divergence. exist.

The fourteenth embodiment shown in FIG. 20 is an optical system that efficiently focuses such a semiconductor laser beam onto a circular spot.

In the figure, reference numeral 50 denotes a semiconductor laser whose vertical and horizontal divergence origins are both on the emission surface, and which emits a beam in which the vertical divergence angle is larger than the horizontal divergence angle. 51 is a joint surface.

52 is a rotationally symmetrical lens for collimating the beam from the exit surface of the semiconductor laser 50, and 53 is an anamorphic afocal optical system.

This anamorphic AF focal system may be either a prism anamorphic AF focal system or a cylindrical anamorphic AF focal system. With this anamorphic afocal system, the afocal light from the collimating optical system 52 is expanded or reduced in only one direction. In the drawing, the beam diameter in the longitudinal direction is reduced. By appropriately setting the focal length of the rotationally symmetrical lens 52 and the magnification (reduction) ratio of the afocal system, parallel light having a circular cross section having a radius of 0.892R relative to the radius R of the rotationally symmetrical imaging lens 54 can be obtained. When the optical system of this embodiment is applied to the apparatus shown in FIG. 19, a deflection mirror 44 may be arranged between the afocal system 53 and the imaging lens 54.

[Brief explanation of drawings]

Figure 1 is a diagram showing an example of the emission characteristics of a semiconductor laser, Figure 2 is a layout diagram of an optical system for collimating the dome from a semiconductor laser having the emission characteristics shown in Figure 1, and Figure 3 is a diagram showing an example of the emission characteristics of a semiconductor laser. Figure 4 is an optical layout diagram of the collimating optical system of the third embodiment of the second embodiment, Figure 5 is the optical layout of the fourth embodiment, and Figure 6 is the optical layout of the fifth embodiment. 7 is a diagram showing a cross section of parallel light from the collimating optical system of the first to fifth embodiments, and FIG.
The figure is an optical layout diagram of a sixth embodiment in which a rotationally symmetrical parallel light beam is obtained; Figures 11 and 12 are diagrams explaining the intensity distribution of a semiconductor laser beam, Figure 13 is a diagram explaining an optical system in which the intensity distribution is rotationally symmetric, and Figure 14 is a diagram explaining an optical system that provides a circular spot with energy efficiency. 15 to 18 are diagrams showing the optical arrangement of the 8th embodiment, and FIGS. 15 to 18 are diagrams showing the 9th to 12th embodiments, each having a different configuration and in which a circular spot can be obtained with good energy efficiency.
The figure shows an example in which the optical system of the present invention is applied to a scanning system. Figure 20 shows an optical system that efficiently converts beams from semiconductor lasers that are equal to the origin of divergence and differ only in orthogonal directions to a circular spot. It is a layout diagram. In the figure, 1 is a semiconductor laser, 2 is a bonded surface, 3 is a laser beam, 6, 10, 12, 14, 17, 18920, 217
25, 26, 34, 35, 37, 38, 39, 41, 4
2 is a cylindrical lens, 7, 11, 15, 16, 1
99 27, 31, 33, 36, 40, 52, 54 are rotationally symmetric lenses, 29, 23, 43, 53 are anamorphic focal optical systems, 22, 3 are optical systems with different focal lengths in the vertical and horizontal directions It is. Younger brother 1 figure 2 Inferior figure 4 figure 6 younger brother ヮ figure 8 younger brother q figure younger brother lo figure younger brother ha figure Figure 1: Figure 8, Figure 8, Figure 2, Figure 1.

Claims (1)

[Claims] 1. The origin of divergence of the beam emitted from the emission surface of the semiconductor laser in the direction parallel to the bonding surface of the semiconductor laser is located at a position far from the emission surface on a predetermined axis; A semiconductor laser whose divergence origin in the vertical direction is located near the exit surface on the predetermined axis, and whose focal point coincides with one of the divergence origins and where the divergence from this one divergence origin is located. consisting of a rotationally symmetrical lens system that parallelizes the beam only in the divergent direction, and a cylindrical system whose generatrix coincides with the direction in which the beam is parallelized by the rotationally symmetrical lens system and receives the beam from the rotationally symmetrical lens system, A beam shaping optical system in which a composite focal point position of the rotationally symmetric lens system and the cylindrical system coincides with the divergence origin of the other, and the composite system collimates a beam in a divergent direction from the other divergence origin. 2. Claim 1, wherein the one divergence origin is a divergence origin in a direction perpendicular to the joint surface, and the generatrix of the cylindrical system coincides with a direction parallel to the joint surface.
Beam shaping optical system described in Section 2. 3. Claim 1, wherein the one divergence origin is a divergence origin in a direction parallel to the joint surface, and the generatrix of the cylindrical system coincides with a direction perpendicular to the joint surface.
Beam shaping optical system described in Section 2.