JPS605682A - Charge transfer solid-state image pickup device - Google Patents
Charge transfer solid-state image pickup deviceInfo
- Publication number
- JPS605682A JPS605682A JP58114574A JP11457483A JPS605682A JP S605682 A JPS605682 A JP S605682A JP 58114574 A JP58114574 A JP 58114574A JP 11457483 A JP11457483 A JP 11457483A JP S605682 A JPS605682 A JP S605682A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- region
- signal charge
- amount
- dynamic range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 2
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電荷転送型固体撮像装置に関し、特に該装；６
のグイナミソクレンジを高めるための構造に閂するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charge transfer solid-state imaging device, and in particular to a charge transfer type solid-state imaging device;
It is a lock on the structure to increase the cleanliness of the Guinamiso.
従来、二の種の装置として入射光量に応じて積分時間を
変えるものがある。第１図にその構成図を、第２図１に
該装置におりる照度、稍う（時間、出力重重の間係を示
ず。第１図において、１は光電変換素子、２ば前記光電
変換素子１により光電変換された信号電荷を信″Ｆｆ電
（；；ｊ転送子［ツヘ移送するためのＭＯ３型移送り−
−ト（ＳＧ）、３は電（；ｉｊ転送レジスタ、４は和分
時間を設定するためのＭ ＯＳ型移送ゲ−）（ＴＧ）、
５はオーバーフロー！゛レイン（ＯＦＤ） 、６ば出力
グー１− （ＯＧ） 、７はりセットゲート（ＲＧ）、
８はリセットトランジスタドレイン（ＲＩ））、９は信
号電荷を重圧値に変換するための出力部である。Conventionally, there are two types of devices that change the integration time depending on the amount of incident light. Fig. 1 shows its configuration, and Fig. 2 shows the illuminance, time, and output weight that enters the device. The signal charge photoelectrically converted by the conversion element 1 is transferred to the MO3 type transfer element (;;j transfer element).
- gate (SG), 3 is an electric transfer register (;ij transfer register, 4 is a MOS type transfer gate for setting the integration time) (TG),
5 is overflow!゛Rain (OFD), 6 output goo 1- (OG), 7 beam set gate (RG),
8 is a reset transistor drain (RI)), and 9 is an output section for converting a signal charge into a pressure value.
次に動作について説明する。ＭＯ３型移送ゲート４がロ
ーレベルになった時点から、光ｍＷ １！７ Ｍｉ子ｌ
により光電変換された信号型（ｕｉが積分されイ）。Next, the operation will be explained. From the moment the MO3 type transfer gate 4 becomes low level, the light mW 1!7 Mil
The signal type photoelectrically converted by (ui is integrated).
そして一定時間にねたつて「（分され）こ信号型４％は
、ＭＯ３型移送ゲート２がハイレベルになることによっ
て電荷転送レジスタ３に移送され、以Ｆφ１、φ２、φ
３、φ４に転送パルスを加えることにより順次出力され
、出力部９で光信号電圧として検出される。この場合、
前記粕分時間′目ｎｔは第２図に示すように照度の増大
にともない減少するように設定し、次いで外部回路によ
りｆｒｌう３特間′ｌ″ｉｎｔと信号出力Ｖｏｕｔを演
算処理する。こうすることにより、■走査時のダイナミ
ックレンジｈを持つものが、みか８ノ−ヒｈ゛まで向上
する。Then, after a certain period of time, this signal type 4% is transferred to the charge transfer register 3 by the MO3 type transfer gate 2 becoming high level, and then Fφ1, φ2, φ
3. By applying a transfer pulse to φ4, the signals are sequentially output and detected as an optical signal voltage by the output section 9. in this case,
As shown in FIG. 2, the lees minute time 'nt is set to decrease as the illuminance increases, and then an external circuit calculates and processes the three special intervals 'l'int and the signal output Vout. By doing so, the dynamic range (h) during scanning can be improved to as high as 8/-h.
従来のこの種の固体撮像装置は以上のように構成されて
いるので、照度に応じて積分時間を設定しさらに積分時
間からみかけのダイナミックレンジ１１“を作り出すた
めの演算回路が必要であり、また１走査時のダイナミッ
クレンジばあ（までもｈであるため、明暗の極端な場合
の撮像は困難であるなどの欠点があった。Since this type of conventional solid-state imaging device is configured as described above, it requires an arithmetic circuit to set the integration time according to the illuminance and further create an apparent dynamic range of 11" from the integration time. Since the dynamic range during one scan is only h, there are drawbacks such as difficulty in capturing images in extreme cases of brightness and darkness.
この発明は上記のような従来のものの欠点を除去するた
めになされ）こもので、入射光量に応じて転送領域全体
の面積を変えるようにすることにより、■走査時のダイ
ナミックレンジを大きくできる電荷転送型固体撮像装置
を提供することを目的とし“Ｃいる。This invention was made in order to eliminate the drawbacks of the conventional ones as described above. By changing the area of the entire transfer region according to the amount of incident light, ■ charge transfer that can increase the dynamic range during scanning. The purpose is to provide a type solid-state imaging device.
ンジは、転送領域が転送できる最大電荷量とノイズによ
って決まる最小電荷９との差によって決まる。そして一
般にノイズ源としてＬｅｔ：、（１）デバイス・＼の電
（１；ｊ注入ノイズ（２ン亀荷を転送する点きの電荷量
のゆらぎによるノイズ
（３）電荷検出のときのノイズ
が考えられているが、今、−り記（２）ｒＲについて考
えると、上記（２ノ項のノイズとしては暗電流や結晶欠
陥に起因するトラップノイズがある。しかし、両者とも
転送領域の大きさに伴い増加する領向にあるため、上記
ダイナミックＬ・ンジは転送する電荷量の大小には関係
しない。したがって上記ダイナミックレンジを増大する
ためには、信号量の大きさに応じて転送領域の大きさを
変えることが必要である。The range is determined by the difference between the maximum amount of charge that the transfer region can transfer and the minimum charge 9 determined by noise. In general, the noise sources are considered to be (1) noise caused by fluctuations in the amount of charge at the point where the charge is transferred (3) noise during charge detection. However, if we now consider (2) rR, the noise in item (2) above includes trap noise caused by dark current and crystal defects.However, both of them depend on the size of the transfer region. Therefore, the dynamic range is not related to the magnitude of the amount of charge to be transferred.Therefore, in order to increase the dynamic range, the size of the transfer area should be adjusted according to the magnitude of the signal amount. It is necessary to change.
そこで本発明は、信号電荷量を転送する転送領域を複数
の転送領域で構成し、入射光量に応じて転送領域全体の
面積が変わるようにしたものである。Therefore, in the present invention, the transfer area for transferring the amount of signal charge is constituted by a plurality of transfer areas, and the area of the entire transfer area changes depending on the amount of incident light.
以下、第３し１を用いて本発明の一実施例を説明する。Hereinafter, one embodiment of the present invention will be described using Part 3 and 1.
第３図において、第１図と同一符号は同一、又は相当部
う（を示し、３ａ、３ｂはそれぞれ大きさの異なる転送
領域、９ａ、９ｂはそれぞれ転送領１へ３ａ、３ｂに対
応した出力部である。In Fig. 3, the same reference numerals as in Fig. 1 indicate the same or corresponding parts, 3a and 3b are transfer areas of different sizes, and 9a and 9b are outputs corresponding to 3a and 3b to transfer area 1, respectively. Department.
次に動作について説明する。Next, the operation will be explained.
今、光電変換素子１への入射光量が少なく、転送領域３
ａが飽和しない範囲内で信−冒電荷が転送されるような
場合は、該信号電荷がへ領域に達ずろと、該転送領域３
ａのへ領域の電位はその信号電荷口に応じて下がり、１
−ランジスタＴｒｉの電流１１４；１それに応じて小さ
くなり、出力ＶｏｕｔにはＲｌ ・Ｉ ｌ −１−Ｒ２
・Ｉ ｍａｘ ・・・・・・Ｔｌ）なろ重圧が発生ずる
。ここでＩｍａｘは転送領域３ａ、３ｂが空の状態に出
力部９ａ、９ｂのトランジスタｉ’ｒＬ ’Ｉ’ｒ２に
流れる電流１１．１２の和１０）最大値であり、上記（
１）式が得られるのは転送領域３ ｂが空である限りト
ランジスタ１゛ｒ２のベース電位が高く、その電流Ｉ２
としてＩｍａｘ−１！が得られるからである。Now, the amount of light incident on the photoelectric conversion element 1 is small, and the transfer area 3
When a signal charge is transferred within a range where a is not saturated, the signal charge reaches the region 3 and the transfer region 3
The potential of the region a decreases according to the signal charge port, and becomes 1
- The current of transistor Tri 114; 1 decreases accordingly, and the output Vout has Rl ・I l -1-R2
・I max...Tl) A heavy pressure is generated. Here, Imax is the maximum value of the sum 11.12 of the currents 11.12 flowing through the transistors i'rL'I'r2 of the output parts 9a and 9b when the transfer regions 3a and 3b are empty, and the above (
1) Equation can be obtained because as long as the transfer region 3b is empty, the base potential of the transistor 1゛r2 is high, and its current I2
As Imax-1! This is because it can be obtained.
次いで入射光量が多くなり、転送領域３ａが飽ｆ１１シ
、転送領＠３ｔ）にも信号電荷が転送されてきた状態を
考える。このような状態で信司雷、荷がΔ領域に達する
と、出力部９ａの１ランジスタ’ｌ’ ｒ １のゲート
に加わる電圧は最小となり、このときｌ−ランジスタ′
「ｒｌが叶Ｆ、つまり１１−０となるように構成されて
いる。また一方、転送領ｈｑ３ｂを転送された信号型ｔ
：ｊがＡ領域に達すると出力部９ｂのトランジスタＴｒ
２のゲート電位ひいては電流１２は該信号電荷量に応じ
て低くなり、出力ＶｏｕｔにはＲ２・Ｉ２なる電圧が発
生ずる。従って、転送領域３ａ、３ｂの面積Ｓ ３ａ、
Ｓ ３ｂと１１記抗体旧。Next, consider a state in which the amount of incident light increases, the transfer region 3a becomes full, and signal charges are also transferred to the transfer region @3t. In such a state, when the load reaches the Δ region, the voltage applied to the gate of 1 transistor 'l' r1 of the output section 9a becomes minimum, and at this time, the voltage applied to the gate of 1 transistor 'l'
"rl is configured so that it becomes F, that is, 11-0. On the other hand, the transfer area hq3b is configured so that the transferred signal type t
: When j reaches the A region, the transistor Tr of the output section 9b
The gate potential of signal 2 and thus the current 12 decrease in accordance with the amount of signal charge, and a voltage of R2·I2 is generated at the output Vout. Therefore, the area S 3a of the transfer regions 3a, 3b is
S 3b and 11th antibody old.
Ｒ２とをＳ３ａ： ５３ｂ−Ｒ１： Ｒ２の関係にして
おき、例えばＳ３ａ ： ５３ｂ−１？ Ｉ ： Ｒ２
−１： ９で構成すれば、ダイナミックレンジは１桁増
大」゛るごととなる。Set R2 in the relationship S3a: 53b-R1: R2, for example, S3a: 53b-1? I: R2
-1:9, the dynamic range increases by one order of magnitude.
このような本実施例装置によれば、信司雷、 （ｉｉｉ
口に応じ゛ζ転送領域全体の面ｆｌ”？が変わるため−
ダイナミックレンジの向上が期待てきる。また、ｉｊ（
半のものと比べＭｏｓ＋・ランリスク１１固と１１（抗
１（固とがイ］加されるだりであり、外部回路も不りｌ
ＩＣある。さらに信号量の大小は１走配ごとでなく、侶
号電（ｉｉＪ １１−ｊ体ごとで検出し７ているため、
■走査時のグイナミノクレンシが向−卜し、明暗のＰ
１４１なり）合の撮像がｉｉＪ能となる。According to the device of this embodiment, Shinjirai, (iii
Because the surface fl” of the entire transfer area changes depending on the mouth.
We can expect an improvement in the dynamic range. Also, ij(
Compared to the half type, Mos+ and run risk are 11 hard and 11 (resistance 1 (hard) is added), and the external circuit is also very low.
There is an IC. Furthermore, the magnitude of the signal is detected not for each run, but for each body.
■Guinamino precision during scanning is directed, and bright and dark P
141), the imaging becomes iiJ function.
以上のように、この発明によれば、転送領域を相互に分
離された複故の転送領域とし、光電変１角素子で発生ず
る信号型７ｉｉ１ 曙に応じて転送領Ｊｈ１９全体の面
稍が変わるように構成したので、筒中な構成でグイナミ
ノクレンジを増大させることのできろ電荷転送型固体撮
像装置６がＨ９られる効果がある。As described above, according to the present invention, the transfer area is a multiple transfer area separated from each other, and the overall condition of the transfer area Jh19 changes depending on the signal type 7ii1 generated in the photoelectric conversion element. With this configuration, there is an effect that the charge transfer type solid-state imaging device 6 is able to increase the cleanliness with the in-tube configuration.
第１図は従来の電荷転送型固体撮像装置のｔｌ・Ｖ成図
、第２図は第１図に示すものの照度と出力電圧の関係を
示す図、第３図は本発明の一実施例による電荷転送型固
体撮像装置の構成図である。
１・・・光電変換素子、３ａ、３ｂ・・・転送領１へ。
なお１ン１中同−・符号は同−又は相当部分を示゛→−
０代理人 大 岩 増 ｔｊｌ
第１図
第２図
−ＩＬＬＵ＋、Ｉ ＩＮ／１ｌｃＥ
：、゛・ ３１１
手続補正書（ｔ４ ｆ＋＋’： ）
いＢ１”ｌ リ（）
昭和 年 月 ＩＩ
′１１”ｊ’ｌ’ｌ）長′白１ｊ役
１、事ｆ’ｌの表示 １１°１９ｊｌ、’４５８−１１
４５７４８′２ 発明の名称
山、イ：い１１・；送Ｊ１１．］固１イ（力布ｆパ、・
′Ｊ・□−活゛、゛う、？１ｌ）ｉｆ：を−４る者
代表Ｈ片山仁へ部
−モ菱電機株式会社内
氏名 （７３７５）ブ１′理十人岩増多１１１甲・・ゾ
ｌ”： （１’ｊ／４１．’１．ｔ’、’ ｊ４＋ ：
′１．．Ｉ舎ＩＸ＋５．７ｉ＋正の２′（１象
明細層の発明の訂ｆｆ！ＩＩな説明の１１°ｎ６、補正
の内７゛１
（］）明９１０占第５１′（第１１行のＮ？ ２ ・、
ｌｍ１ｘ ｌをｒＲ２（１２ｍａｘ −１−１１＞ 、
１に訂正′Ｊる。
（２）同第５頁第１２行のｒｌｍａｘｊをｌ−１２ｍａ
ｘ 、１に訂正する。
（３）同第５頁第１２〜１３行の１転送ｉ＋、ｉ’ｌ
、１．’Ｎ ３ ；１゜３ｂＪを１転送領桟３ｂ−１に
δＩ止する。
（４）同第５頁第１３〜１４行のｒ９ａ、９ｈのトラン
ジスタ′Ｉ″ｒ １． ｉ’ｒ ２ｊを１９１）の１ラ
ン大（直であり、」をｒ＋２の最大（直である。１に５
１１する。
（６）同第５頁第１５〜１８行の１１−記（１）式が・
・・・・からである。１を削除する。
以 −１FIG. 1 is a tl/V diagram of a conventional charge transfer solid-state imaging device, FIG. 2 is a diagram showing the relationship between illuminance and output voltage of the device shown in FIG. 1, and FIG. 3 is a diagram according to an embodiment of the present invention. FIG. 1 is a configuration diagram of a charge transfer solid-state imaging device. 1...Photoelectric conversion element, 3a, 3b...To transfer area 1. Note that the same - and symbols in 1 and 1 indicate the same - or equivalent parts.→-
0 agent Masu Oiwa tjl Figure 1 Figure 2-ILLU+, I IN/1lcE:,゛・311 Procedural amendment (t4 f++': ) IB1"l li () Showa year month II '11"j'l'l)long' white 1j role 1, display of thing f'l 11°19jl, '458-11
45748'2 Name of the invention Yama, I: I11.; Transfer J11. ] Hard 1i (Rikifu fpa,・
'J・□-live゛,゛u,? 1l) if: - 4 Representative H Hitoshi Katayama Department - Name within Moribishi Electric Co., Ltd. (7375) B1' Rijunin Iwamasuta 111 A...Zol": (1'j/41. '1.t', 'j4+:
'1. ．． Isha IX + 5.7i + positive 2' (correction of the invention of the 1-zoom detailed layer! II explanation 11°n6, 7゛1 of the correction (]) Mei 910 divination 51' (N in the 11th line? 2 ・,
lm1x l to rR2(12max -1-11>,
Corrected to 1. (2) Set rlmaxj on page 5, line 12 to l-12ma.
Correct x to 1. (3) 1 transfer i+, i'l on page 5, lines 12-13
, 1. 'N 3 ; 1°3bJ is stopped at δI on 1 transfer area 3b-1. (4) On page 5, lines 13 and 14, the transistors ``I''r 1.i'r 2j of r9a and 9h are 1 run large (direct), and '' is the maximum (direct) of r+2. 1 to 5
11. (6) Formula (1) in paragraph 11- of page 5, lines 15 to 18 is
It is because... Delete 1. More than -1
Claims (1)
子で発生した信号電荷を転送する転送領域とから形成さ
れる固体撮像装置において、上記転送領域が相互に分８
１］された複数の転送領域からなり、該複数の転送領域
は上記光電変換率子で発生した信号電荷晴に応じて該信
号電荷の転送に寄与する転送領域全体の面積が変わるよ
うに構成されていることを特徴とする電１１：１転送型
固体撮像装置。(]) In a solid-state imaging device formed from a plurality of photoelectric conversion elements and a transfer area adjacent to the photoelectric conversion elements that transfers signal charges generated by the photoelectric conversion elements, the transfer areas are divided into 8 parts from each other.
1], and the plurality of transfer regions are configured such that the area of the entire transfer region contributing to the transfer of the signal charges changes depending on the signal charge generated in the photoelectric conversion factor. An 11:1 transfer type solid-state imaging device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114574A JPS605682A (en) | 1983-06-23 | 1983-06-23 | Charge transfer solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58114574A JPS605682A (en) | 1983-06-23 | 1983-06-23 | Charge transfer solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS605682A true JPS605682A (en) | 1985-01-12 |
Family
ID=14641240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58114574A Pending JPS605682A (en) | 1983-06-23 | 1983-06-23 | Charge transfer solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605682A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157081A (en) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | Charge transfer device |
| JPH01229874A (en) * | 1988-03-02 | 1989-09-13 | Agency Of Ind Science & Technol | Woven and knitted cloth consisting of silicon-carbon conjugated fiber and production thereof |
| JPH02229217A (en) * | 1988-11-28 | 1990-09-12 | Avco Corp | Silicon carbide monofilament with improved composite property and preparation thereof |
| JP2001077351A (en) * | 1999-08-17 | 2001-03-23 | Hyundai Electronics Ind Co Ltd | Charge transfer device |
-
1983
- 1983-06-23 JP JP58114574A patent/JPS605682A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157081A (en) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | Charge transfer device |
| JPH01229874A (en) * | 1988-03-02 | 1989-09-13 | Agency Of Ind Science & Technol | Woven and knitted cloth consisting of silicon-carbon conjugated fiber and production thereof |
| JPH0316422B2 (en) * | 1988-03-02 | 1991-03-05 | Kogyo Gijutsu Incho | |
| JPH02229217A (en) * | 1988-11-28 | 1990-09-12 | Avco Corp | Silicon carbide monofilament with improved composite property and preparation thereof |
| JP2001077351A (en) * | 1999-08-17 | 2001-03-23 | Hyundai Electronics Ind Co Ltd | Charge transfer device |
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