JPS6050850A - Scanning electron microscope - Google Patents

Scanning electron microscope

Info

Publication number
JPS6050850A
JPS6050850A JP58160089A JP16008983A JPS6050850A JP S6050850 A JPS6050850 A JP S6050850A JP 58160089 A JP58160089 A JP 58160089A JP 16008983 A JP16008983 A JP 16008983A JP S6050850 A JPS6050850 A JP S6050850A
Authority
JP
Japan
Prior art keywords
electron beam
electron
scanning
signal
electron ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58160089A
Other languages
Japanese (ja)
Other versions
JPH0542102B2 (en
Inventor
Akinari Ono
小野 昭成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP58160089A priority Critical patent/JPS6050850A/en
Publication of JPS6050850A publication Critical patent/JPS6050850A/en
Publication of JPH0542102B2 publication Critical patent/JPH0542102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295Electron or ion diffraction tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To prevent any variation of a position irradiated by an electron ray caused by a beam locking by making the position of a minimum confusion circle formed when an electron ray is subjected to locking in a scanned image observation mode, to coincide with the corresponding position of a sample surface, based upon a signal representing an electron ray locking angle. CONSTITUTION:Providing an electron gun 1, a focusing lens 2, an objective lens 3, deflectors 6, 7 to deflect the electron ray, means 11-13 to supply scanning signals to the deflectors 6, 7, a detector 20 to detect a signal obtained from a sample 4 by the electron ray irradiating the sample 4, and a display device 14 synchronously scanned with the above-mentioned electron ray scanning to display a picture in response to an output signal from the detector 20, an ovservation can be performed by making changeover between a scanned picture and an electron channeling pattern by the electron ray locking. In such a device, a means is provided to make a position Cm of a minimum confusion circle formed when an electron ray is subjected to locking in a scanned image observation mode, to coincide with the corresponding position of the sample surface S based upon a signal representing the electron ray locking angle alpha.

Description

【発明の詳細な説明】 [産業上の利用分野I A′fF、明はビーム11ツ4ング機能を(晶えた走査
電子顕微!任に閏りる。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application IA'fF, light uses the beam 11x4 function (excellent scanning electron microscope!).

[従来技術1 ;H111,’I、走査電子顕微鏡を■い(?11了ブ
Vンネリングパターンを観察することにより、バルク払
拭r1の表面の結晶Vfl 41’tが広< t’r 
’/’rわれている。電子チャンネリングパターン(ま
4段行1ηの良い電子線を用い(、r++tl l t
;−、、t; lJル’rN 了fu’/)it(t’
JJ 411M ヲ一点に固定したまま、電子線の入射
角θ及び方位角φを走査して所謂ビームロッキングする
と共に、この走査に伴なって得られた反0・1電了、二
次電子等の検出信号をこの走査に同期走査される陰極線
管等の表示手段に供給することによっ−C得られる。
[Prior art 1; H111,'I, By observing the bunneling pattern using a scanning electron microscope, it was found that the crystal Vfl41't on the surface of the bulk wiping r1 was wide <t'r
'/'r has been. Electron channeling pattern (using a good electron beam with 4 rows of 1η) (, r++tl l t
;-,,t; lJru'rN 了fu'/)it(t'
JJ 411M While fixing the electron beam at one point, scan the incident angle θ and azimuth angle φ of the electron beam to perform so-called beam locking, and also measure the anti-0.1 electron beam, secondary electrons, etc. obtained with this scanning. -C is obtained by supplying the detection signal to a display means such as a cathode ray tube which is scanned in synchronization with this scanning.

第1図(a)及び(、b)は各々走査電子顕微鏡におい
て、通常の走査像と電子チャンネリングパターンを得る
場合の光線図を示すためのもので、両図において1は電
子銃であり、2は集束レンズ、3は対物レンズ、4は試
別である。6はX方向及びY方向用の一対の偏向=lイ
ルより成る第1段の偏向器であり、同様に7は一対の偏
向]イルJ:り成る第2段の偏向器であり、FBは電子
線を示している。これらの図から明らかなように、走査
像観察モードの場合には集束レンズ2により電子銃1の
クロスオーバー像5が形成され、この像5を対物レンズ
3により試料面S上に投影すると共に、偏向器6及び7
によりこの投影点を試料面S十において走査する。一方
電子チャンネリングパターン観察モードにおいては、集
束レンズ2を電子銃のり「1スA−バー像が対物レンズ
3の前方焦点面E3に形成される」、うに励磁し、下行
イf電子線が試$41 /lに照射されるJ、うにづる
。そこぐ、第1段のf1mi向器61重1、’) 7t
7 ”r線1:: r’3 全偏向−J−ルト、クロス
オーバー像5゛は対物レンズ3の前記焦点面8を移÷1
1?Jるため、試t’l ’Iに入Q−1する電子線「
13は試才≧17Iへの人!J・I r:Xを光軸C上
の一点に固定()た状態0人0・1角0及びカイ☆角φ
をゆ化さけることができる。しかしくくがら、このJ、
うイr従来装Hにおいては、λ・1物レンズの球面収差
の影響及び対物レンズの物面が11−白黒6の1−1自
主面と一致しないため、電子線を[1ツ1ング(jるど
、電子線の試料而上にai iJる照射位置が実際には
数iQf1m移動してしまい、そのため試別の微小部分
の解析をすることができ/、「かっ/;: 、、このJ
、うな欠点を解決するため、例えば、対物1ノンズの近
傍に補助1ノンズを配置し、この補助レンズの励磁強f
αを電子線の偏向角に応じ【身化さ【!、電子線の試別
への入q・1点が固定されるJ、うにりることも考えら
れるが、装置が大がかりにイCす、ぞの製作費用す高<
<rる。
Figures 1 (a) and (, b) are for showing ray diagrams when obtaining a normal scanning image and an electron channeling pattern in a scanning electron microscope, respectively. In both figures, 1 is an electron gun; 2 is a focusing lens, 3 is an objective lens, and 4 is a trial lens. 6 is a first stage deflector consisting of a pair of deflection planes for the X and Y directions; similarly, 7 is a second stage deflector consisting of a pair of deflection planes J: FB; Shows an electron beam. As is clear from these figures, in the scanning image observation mode, a crossover image 5 of the electron gun 1 is formed by the focusing lens 2, and this image 5 is projected onto the sample surface S by the objective lens 3. Deflectors 6 and 7
This projected point is scanned on the sample surface S0. On the other hand, in the electron channeling pattern observation mode, the focusing lens 2 is excited so that the electron gun ``one bar image is formed on the front focal plane E3 of the objective lens 3'', and the descending electron beam is sampled. J, sea urchin irradiated to $41/l. Right there, the 1st stage f1mi device 61 layers 1,') 7t
7 ” r-ray 1:: r'3 Total deflection - J-rot, crossover image 5' is obtained by shifting the focal plane 8 of the objective lens 3 ÷ 1
1? In order to pass the test, the electron beam that enters the test t'l 'I is
13 is a person who has a trial talent ≧ 17I! J・I r: State where X is fixed () at one point on optical axis C 0 person 0・1 angle 0 and chi☆angle φ
You can avoid burning. However, this J,
In conventional equipment H, the electron beam is However, the irradiation position of the electron beam on the sample actually moved several iQf1m, which made it possible to analyze the minute part of the sample. J
, In order to solve such drawbacks, for example, an auxiliary 1-nons is placed near the objective 1-non, and the excitation strength f of this auxiliary lens is
α is determined according to the deflection angle of the electron beam. It is conceivable that the entry point of the electron beam into the sample is fixed, but since the equipment is large-scale, the production cost is very high.
<rru.

3− [発明の目的] 本発明はこのような従来の欠点を解決J−べくなされた
もので、ビームロッキング(−伴なう電子線の照射位置
の変動を防ぐことのできる比較的構造簡単で製作コスト
の低廉な装置を提供1することを目的としでいる。
3- [Objective of the Invention] The present invention has been made to solve these conventional drawbacks, and has a relatively simple structure that can prevent beam locking (-the fluctuation of the electron beam irradiation position caused by the electron beam). The purpose is to provide a device that is inexpensive to manufacture.

[発明の構成] 本発明は電子銃と、集束レンズと、対物レンズと、電子
線を偏向するための偏向器と、該偏向器に走査信号を供
給するための手段と、電子線°の試料への照射によって
試料より得られる信号を検出するための検出器と、該検
出器よりの出力信号に基づいて像を表示するため前記電
子線の走査に同期走査される表示装置とを備え、走査像
と電子線ロッキングによる電子チャンネリングパターン
を切換えて観察できるようにした装置において、電子線
ロッキング角αを表わす信号に基づいて、走査像観察モ
ードにおいて電子線をロッキングした際に形成される最
小錯乱円の位置を試料面の位置に一致させる手段を具備
したことを特徴どしてい4− イ)、。
[Structure of the Invention] The present invention includes an electron gun, a focusing lens, an objective lens, a deflector for deflecting an electron beam, a means for supplying a scanning signal to the deflector, and an electron beam sample. A scanning device comprising: a detector for detecting a signal obtained from the sample by irradiating the electron beam; and a display device that is scanned in synchronization with the scanning of the electron beam to display an image based on the output signal from the detector. In a device that enables observation by switching between an image and an electron channeling pattern based on electron beam locking, the minimum confusion formed when the electron beam is locked in scanning image observation mode is determined based on a signal representing the electron beam rocking angle α. It is characterized by comprising a means for matching the position of the circle with the position of the sample surface 4-a).

[発明の信用] 以下、本発明において基本となっている考えを第1図と
同一の構成要素に対しては同一番号が付されIこ第2図
及び第3図に基づいて説明する。
[Credit for the Invention] The basic idea of the present invention will be explained below with reference to FIGS. 2 and 3, in which the same components as in FIG. 1 are denoted by the same numbers.

第2図に承りように、走査像観察モードにおい−Cは、
対物レンズ3は光路1−1で示J−ように前記り「jス
A−バー像5の像を試料面S上に結像するj、うに励磁
されている。従って、電子チャンネリングパターン観察
モードに移行1ノだ際に対物レンズ3のト11磁がその
ままであるとすれば、第1の偏向器6の偏向」−面9は
クロスオーバー像5より下に配置6されているから、第
1の偏向器6によりロッキングを行なうと、電子線は光
路1−2に示すように試別面SJ、すΔ1°下側の点1
0を中心として[1ツー1:ングするはずであり、その
ため、試別面Sにでは電子線の入射貞が変動Jる。更に
、第2図においては対物レンズ3の球面収差を考慮しな
か−)だが、実際には球面収差があるため、ロッキング
に伴<2う人用魚の変動はより大ぎなものとなる。
As shown in Figure 2, in the scanning image observation mode -C:
The objective lens 3 is excited as shown in the optical path 1-1 to form an image of the bar image 5 on the sample surface S. Therefore, the electron channeling pattern can be observed. If the magnetic field of the objective lens 3 remains the same when the mode is shifted to the first mode, the deflection plane 9 of the first deflector 6 is located below the crossover image 5, so When rocking is performed by the first deflector 6, the electron beam is directed to the sample plane SJ, at a point 1 below Δ1°, as shown in the optical path 1-2.
0 as the center, and therefore the incidence of the electron beam on the sample plane S varies. Furthermore, although the spherical aberration of the objective lens 3 is not taken into account in FIG. 2, in reality there is spherical aberration, so the fluctuation of <2 in the human fish due to rocking becomes even larger.

即ち第3図に示すように、第1の偏向器6の偏向1丁面
9ど光軸Oとの交白から発しIこ近軸光線12゜12 
′は試料面Sよリートの前記点10に集束するが、高次
軌道L3,13′の光線は対物レンズ30球面収差の1
こめ試料面Sより上方の白Cmに集束し、この点Cmに
ロッキングの際に照射イ)“7 ”¥1の動きの最も少
ない点(最小錯乱円)ができる、1従って、試料面Sの
位置をこの+:、tcmに含Uることができれば、電子
線照用位圓の11ツー1.ングに伴イjう変り1を最小
にすることがCさる。
That is, as shown in FIG. 3, the deflection plane 9 of the first deflector 6 emits a paraxial ray 12° 12 from the intersection with the optical axis O.
' is focused on the point 10 on the LEET from the sample surface S, but the rays on higher-order trajectories L3 and 13' are affected by 1 of the spherical aberration of the objective lens 30.
It focuses on the white Cm above the sample surface S, and irradiates this point Cm during rocking.A) A point with the least movement (circle of least confusion) of "7" ¥1 is created. If the position can be included in this +:, tcm, 11 to 1 of the electron beam irradiation position. C is to minimize the change 1 due to

いま、試11面Sと最小り11乱円が形成される点Cm
との距離をΔF、C8を対物1ノンズ3の球面収差係数
、αを前記θの最人伯(′あるロッキング角度、z、)
、z、)−をり[lスA−バー像5どス・)物1ノンズ
3及び第1の偏向器6と対物レンズ3との距離、Zl 
、 zi −を各々対物レンズ3と試1′+1而Sとの
距離及び対物レンズ3と前記偏向主面90像10との距
離、dを最小な11乱円のv1径ど1れば、1/Zo 
+1/Z+ =1/7o −+1/Z+Zi ”−Zi
 −八f −プj Δ1−1 Δf−3/4 − Cs −a2d=1/2
 ・ Cs ・ (Z 3 Cあるから、 ど(iる。電子線ブIT −’、/’電流全電流とした
時、(1) i’<の第21i’lは定数どイ「す、又
対物レンズ3の励磁強1αを疫化さ1↓た際の球面収差
係数C5のゆ化す無視できる稈小ざいため、Δ[は実用
上ロッ1ンη角αのみに依(jりると児イfし得る。そ
こC゛、ilJ東−し−ドを走査録七−ドから雷了チャ
ンネリングパターン上−ドに切換えるのに伴なって対物
1ノンズ3の焦」j、(ど試オ′毫1面Sどの距−1を
前記(1)式で゛すλられるΔ]−に相当Jる分だけ変
化させるようにりれば、11ツキングに伴4「−)電子
線照射点の移動を線巾に抑えで微小領域の解析をするこ
とがCさ゛る、1 1実施例1 本発明は十3ilj l/た考えに基づくもので、以下
、図面に!謹づき本発明の実施例を詳)ホする。
Now, the point Cm where the minimum 11 random circle is formed with the 11th surface S
ΔF is the distance from
,z,)
, zi - is the distance between the objective lens 3 and the sample 1'+1S, and the distance between the objective lens 3 and the image 10 of the deflection principal surface 90, and d is the v1 diameter of the minimum 11 random circle, then 1 /Zo
+1/Z+ =1/7o -+1/Z+Zi ”-Zi
-8f -puj Δ1-1 Δf-3/4 - Cs -a2d=1/2
Since there is When the excitation strength 1α of the objective lens 3 is increased by 1↓, the spherical aberration coefficient C5 is negligibly small. Therefore, when switching the east mode from the scanning recording mode to the lightning channeling pattern upper mode, the focus of objective 1 and nons 3 can be changed. If we change the distance -1 between the planes of the 1st plane S by an amount corresponding to Δ] - given by the equation (1) above, the electron beam irradiation point will be 11 Embodiment 1 The present invention is based on the idea that it is possible to analyze a minute area by suppressing movement to a line width. Details) Ho.

7− 第4図は本発明の一実施例を示すためのもので、第4図
においては第1図と同一の構成要素に対しては同一番号
が付されている。
7- FIG. 4 is for showing one embodiment of the present invention, and in FIG. 4, the same components as in FIG. 1 are given the same numbers.

図中11は走査信号発生回路であり、この回路111こ
りの走査信号は各々増幅率可変増幅器12及び13を介
して第1及び第2の偏向器6,7に供給できるようにな
っていると共に、陰極線管14の偏向コイルDに供給さ
れている。15は観察モードを走査像観察モードと電子
チャンネリングパターン観察モードとの間で切換えるに
伴なって、走査信号の第2の偏向器7への供給を制tI
l−!するためのスイッチ回路である。16 t、L 
M了チャンネリングパターンを観察する際に、電子線の
ロッキング角度を指定するための信号を発生Jる[1ツ
4:ング角度指定信号発生回路であり、この回路16よ
りの信号は増幅率可変増幅器12に供給されでいる。1
7及び18は各々集束及び対物レンズ2゜3の励磁電源
である。対物レンズ助長1電源18は励磁制御回路19
よりの制御信号に基づい−C制御される。励磁制御回路
19は走査像観察用の励磁−〇− 指定信号を発11りる第1の回路19aと電子チャンネ
リングパターン観察用の励磁指定信号を発生覆る第2の
回路19bど、回路19よりの出力信号をこれら2つの
回路19a、19bの出力信号間で切換えるためのスイ
ッチ回路19cとより成っている。回路19bに(上前
記ロッキング角度指定信弓発生回路16よりのロッキン
グ角度αを表わt (M号が供給されCおり、この回路
16bはこの回路16J、りの指定信号1こ基づいて、
回路19aが指定づる位置より第(1)式のΔFだけ遠
い位置に最小811乱円Ornを形成づるように対物レ
ンズ3を励…J−るJこめの信号を発生する。又、前記
スイッチ回路15どスイッチ19Cとは連動する、」、
うになっている。20は電子線FBの試料4への照01
によつ−(、試Fl 4 J、り発生した反射電子等を
検出Jるための検出器であり、この検出器20J、りの
出力信号は増幅器21を介して前記陰極線管14に輝度
イハシ〕どして供給されている。
In the figure, 11 is a scanning signal generation circuit, and the scanning signals from this circuit 111 can be supplied to the first and second deflectors 6 and 7 via variable gain amplifiers 12 and 13, respectively. , are supplied to the deflection coil D of the cathode ray tube 14. 15 controls the supply of the scanning signal to the second deflector 7 as the observation mode is switched between the scanning image observation mode and the electron channeling pattern observation mode.
l-! This is a switch circuit for 16t, L
When observing the channeling pattern, a signal is generated to specify the locking angle of the electron beam. The signal is supplied to the amplifier 12. 1
7 and 18 are excitation power sources for the focusing and objective lenses 2.3, respectively. Objective lens aid 1 power supply 18 is excitation control circuit 19
-C is controlled based on the control signal from The excitation control circuit 19 includes a first circuit 19a that generates an excitation designation signal 11 for observing a scanning image, and a second circuit 19b that generates an excitation designation signal for observing an electronic channeling pattern. The circuit 19c includes a switch circuit 19c for switching the output signal of the circuit between the output signals of these two circuits 19a and 19b. The circuit 19b is supplied with the locking angle α from the rocking angle designation signal generation circuit 16 (above), and this circuit 16b is supplied with the rocking angle α from the rocking angle designation signal bow generation circuit 16, and this circuit 16b receives the designation signal 1 from the circuit 16J.
The circuit 19a generates a signal that excites the objective lens 3 so as to form a minimum 811 random circle Orn at a position distant from the specified position by ΔF of equation (1). Further, the switch circuit 15 and the switch 19C are interlocked.
It's becoming a sea urchin. 20 is the illumination 01 of the electron beam FB on sample 4
The output signal of this detector 20J is sent to the cathode ray tube 14 via an amplifier 21 to increase the luminance. ] How is it supplied?

このJ、う/l−構成において、まず走査像を観察しJ
、うとづる際には、スイッチ回路15及び19Cを第4
図の点線のように接続づるとjljに、励磁電源17を
切換えて集束レンズ2にJ、り電子銃1の像が第1図(
a>の点5に形成されるJ、うにする。
In this J, u/l-configuration, first observe the scanned image and
, when dozing off, switch circuits 15 and 19C are
When connected as shown by the dotted line in the figure, the excitation power supply 17 is switched to Jlj, and the image of the electron gun 1 is transferred to the focusing lens 2 as shown in Fig. 1 (
J formed at point 5 of a>.

そのため、対物レンズ3はり[1スA−バー像5の像を
試わl i′ri′1S−1に結像づるように励磁され
る。又、増幅率可変増幅器12.13の増幅率を図示外
の制御手段により走査像観察用の所定の値に切換える。
Therefore, the objective lens 3 is excited so that the image of the A-bar image 5 is focused on L i'ri'1S-1. Further, the amplification factors of the variable amplification factor amplifiers 12 and 13 are switched to a predetermined value for scanning image observation by a control means not shown.

そこで、走杏信号発イに回路11J、すflr: +!
状の走査信号を発生すれば、電子線は試料而上を二次元
的に走査し、この走査に伴4Tつで検出器20j。
Therefore, circuit 11J is activated to generate the running signal, flr: +!
When a scanning signal like this is generated, the electron beam scans the physical sample two-dimensionally, and along with this scanning, the detector 20j is detected at 4T.

り得られた検出信号は陰極線管14に供給されるため、
陰極線管14には通常の走査像が表示される。次に電子
チャンネリングパターンを観察しようとJ゛る際には、
スイッチ回路190を第4図において実線で示すように
接続り=るどJtに、スイッチ回路15を非導通状態に
切換える。更に、集束レンズ2を第1図(b)に示すよ
うに、電子銃1のり【]スA−バー像が対物レンズの前
方焦点面8に形成づるように励磁づる。又、対物レンズ
のb11磁電源18は第2の励磁指定伯号介年回路19
よりのす、I+ Ia指定(1’7 >’3 +、−早
づいて励(娃されるため、対物1ノンス:′3はfA 
/Is t:’+乱内円Cm第1図に示す場合j、り前
1.+1△1だ(J遠い(1’/ Vr’lに来る」、
うにη1111される1、−fこ(・、11−rイ、ツ
〕介11回路1J、り走査信号を供給りれば、この走査
(ijr3は第1の偏向器6に供給され、ぞの結宋、電
r銃1のり[1スオーバー像1)゛が対物1ノンズの前
/]焦魚而面を走査Jるため、電子線の試1M ’lへ
の八〇・1点を固定した状態で大剣f(10及びj)位
角φが走査される。ぞこC1検出器20 J、りの出カ
イ、1月に阜づい−(陰極線管14には宙rJIIンネ
リングパターンが表示されるが、対物レンズJ3の焦+
:、!距11111は、走査像観察モードの場合J、す
1)前ijLΔi−tc相当Jる分だ(°)艮くされて
いる1、:v)、前記II4小1i乱円が形成される点
CmもΔ[だtJ移動1)C1−1−1σ試判而Sの位
1mと一致することにイcる。従つ【、試$11面Sに
おける電子線入口・1貞の移り1をり、l小に抑λるこ
とができる。
The detection signal obtained is supplied to the cathode ray tube 14.
A normal scanned image is displayed on the cathode ray tube 14. Next time you go to observe the electron channeling pattern,
When the switch circuit 190 is connected as shown by the solid line in FIG. 4, the switch circuit 15 is turned off. Further, the focusing lens 2 is excited so that a beam A-bar image of the electron gun 1 is formed on the front focal plane 8 of the objective lens, as shown in FIG. 1(b). In addition, the b11 magnetic power source 18 of the objective lens is connected to the second excitation designation circuit 19.
Toyo, I + Ia designation (1'7 >'3 +, - early encouragement (to be married, objective 1 nonce: '3 is fA
/Is t:'+Inner circle Cm In the case shown in Fig. 1, j, front 1. +1△1 (J far (1'/ coming to Vr'l),
If a scanning signal is supplied to the 11 circuit 1J, then this scanning (ijr3 is supplied to the first deflector 6, and the Song Dynasty, electric gun 1 beam [1 sover image 1) ゛ in front of objective 1 nons/] In order to scan the jiao-gyo surface, the electron beam test 1M'l was fixed at 80.1 point. In this state, the position angle φ of the large sword f (10 and j) is scanned. is displayed, but the focus of objective lens J3 is
:,! The distance 11111 is J in the case of the scanning image observation mode, and is equal to the previous ijLΔi−tc (°): v), the point Cm where the II4 small 1i random circle is formed. It also happens that Δ[datJ move 1) C1-1-1σ trial judgment is equal to the digit 1m of S. Therefore, it is possible to reduce the electron beam entrance and the transfer of 1 beam on the test surface S to 1 small.

尚、L J lノIこ実施例【」1、本発明の一実施例
に過さ゛f、幾多の他の態様で・実施して−b良い。
It should be noted that this embodiment is merely one embodiment of the present invention; it may be implemented in numerous other embodiments.

例λば、」述しlJ実施例(、二おいては、対物レン1
1− ズの焦魚距離を変化さ1↓るようにし“lこか、観奈七
−ドを切換えるに際しく、逆に試料の/]を光軸1ノ向
にΔFだIi自動的に移動させるように構成しくも授い
、。
For example, in the lJ embodiment (2), the objective lens 1
1) Change the focusing distance of the 1st point by 1↓, and when switching the 7th point, on the contrary, automatically move the /] of the sample in the direction of the optical axis 1. It is structured and bestowed.

[効果1 上述した説明から明らか’、’t J:うに、本発明に
1.朱づく装置によれば、比較内面111目−) !1
1!1作:1ストの安価な構成により、電子線の人躬貞
をほとんど移動させることなく電子線をロッキングして
、微小領域の電子チャンネリングパターンをl+lJ察
りることができる。
[Effect 1 It is clear from the above explanation', 't J: Sea urchin, 1. According to the reddening device, the comparative inner surface is 111th -)! 1
1! One-piece construction: With a one-stroke, inexpensive configuration, it is possible to lock the electron beam without moving the electron beam and detect the electron channeling pattern in a minute area.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)及び(b)は従来装置にお()る各々、走
査像観察モード及び宙了ヂ1?ンネリングパターン観察
モードの光線図、第2図及び第3図は本発明の基本的考
えを説明りるための図、ui /1図は本発明の一実施
例を示Jための図Cある。 1:電子銃、2:集束レンズ、3:対物レンズ、4:試
料、5:走査像観察モードにお(−Jる電子銃のクロス
オーバー像、5−:電子ヂャンネリング12− バクーンi11.!察し一ドにお【」る電子銃のクロス
オーバー酸、6 、7: ll11!向器、11:走査
信号発生回路、12.13:増幅率可変増幅器、14:
陰極線管、Ih、19(C:スイッチ回路、16:ロワ
1ング角+CI指定fFisj発41回路、17.18
:励磁電源、19 : 1ijl lit制911回路
、19a、19b:励磁1旨定イi’i ’3 R11
’ I!’l k”FI、20:M出器、C:光軸、C
rr):最小111乱円が(fイ1リール■;、ミ、S
:試料面。 Bt K’l出願人 11本電子株式会社 代表者 伊睦 −大
FIGS. 1(a) and 1(b) show the scanning image observation mode and suspended image mode (1) in the conventional apparatus, respectively. A ray diagram of the tunneling pattern observation mode, Figures 2 and 3 are diagrams for explaining the basic idea of the present invention, and Figure C is a diagram for explaining an embodiment of the present invention. . 1: Electron gun, 2: Focusing lens, 3: Objective lens, 4: Sample, 5: Scanning image observation mode (-J crossover image of electron gun, 5-: Electron channeling 12- Bakun i11.! 11: Scanning signal generation circuit, 12.13: Variable gain amplifier, 14:
Cathode ray tube, Ih, 19 (C: switch circuit, 16: lower angle + CI designated fFisj 41 circuit, 17.18
: Excitation power supply, 19: 1ijl lit system 911 circuit, 19a, 19b: Excitation 1 effect i'i '3 R11
'I! 'l k'FI, 20: M output, C: Optical axis, C
rr): Minimum 111 random circles (f I 1 reel ■;, Mi, S
: Sample surface. Bt K'l Applicant 11 Electronics Co., Ltd. Representative Imu - Dai

Claims (3)

【特許請求の範囲】[Claims] (1)電子銃と、集束レンズと、対物レンズと、電子線
を偏向するための偏向器と、該偏向器に走査信号を供給
するための手段と、電子線の試料への照射によって試料
より得られる信号を検出器るだめの検出器と、該検出器
よりの出力信号に基づいて像を表示Mるため前記電子線
の走査に同期走査される表示@置とを備え、走査像ど雷
了!fAnツキングによる電子チャンネリングパターン
を切換えて観察できるようにした装置において、電子線
ロッキング角αを表わJ信号に基づいて、走査像観察モ
ードにおいて電子線をロッキングした際に形成される最
小錯乱円の位置を試お1而の位置に一致させる手段を具
備したことを特徴とりる走査電子顕微鏡。
(1) An electron gun, a focusing lens, an objective lens, a deflector for deflecting an electron beam, a means for supplying a scanning signal to the deflector, and a sample to be removed by irradiating the sample with an electron beam. It is equipped with a detector for detecting the obtained signal, and a display which is scanned in synchronization with the scanning of the electron beam in order to display an image based on the output signal from the detector. Finished! In an apparatus that enables observation by switching the electron channeling pattern by fAn tracking, the minimum circle of confusion formed when the electron beam is locked in the scanning image observation mode based on the J signal, which represents the electron beam rocking angle α. 1. A scanning electron microscope characterized by comprising a means for testing and matching the position of the object with the position of the object.
(2)前記電子線1]ツキング角αを人ねり信号に基づ
いて、走査像観察モードにJtいて電子線を11ツ1ン
グしl、=際に形成される最小♀j1乱円の位置を試1
1而のイ〜’t if”7に 致さIJる手段1.1、
対物レンズの焦白距#fを倹化さ1Lる手段から成る特
許請求の範囲第1拍記載の走査電子顕微鏡。
(2) The position of the minimum ♀j1 random circle formed when the electron beam 1] is set to the scanning image observation mode and the electron beam is turned 11 on the basis of the tucking angle α to the bending signal. Trial 1
1.Means to achieve 't if'7 1.1,
A scanning electron microscope according to claim 1, comprising means for reducing the focal distance #f of the objective lens to 1L.
(3)前記電子線11ツニ1ング角αを表わず信号に燵
づいて、走査像観察モードにおいて電子線をロワ1ニン
グした際に形成される最小♀11100位置を試オ′セ
1面のイ)“111“I(、二 致さlる手段は、試料
を光軸に沿テ)(機械的に移動さ1Lる1段から成る特
許請求の範囲第(1)項記載の走査電子顕微鏡。
(3) Testing the minimum ♦11100 position formed when lowering the electron beam in the scanning image observation mode based on the signal without showing the electron beam 11 tuning angle α. a) "111" I (2) The means for aligning the sample along the optical axis (111) (2) The scanning electron beam according to claim (1), which comprises one mechanically moved stage of 1L. microscope.
JP58160089A 1983-08-31 1983-08-31 Scanning electron microscope Granted JPS6050850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58160089A JPS6050850A (en) 1983-08-31 1983-08-31 Scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160089A JPS6050850A (en) 1983-08-31 1983-08-31 Scanning electron microscope

Publications (2)

Publication Number Publication Date
JPS6050850A true JPS6050850A (en) 1985-03-20
JPH0542102B2 JPH0542102B2 (en) 1993-06-25

Family

ID=15707617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160089A Granted JPS6050850A (en) 1983-08-31 1983-08-31 Scanning electron microscope

Country Status (1)

Country Link
JP (1) JPS6050850A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5652859A (en) * 1979-10-05 1981-05-12 Hitachi Ltd Scanning type electron microscope
JPS5765656A (en) * 1980-10-08 1982-04-21 Hitachi Ltd Limited view diffraction image device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5652859A (en) * 1979-10-05 1981-05-12 Hitachi Ltd Scanning type electron microscope
JPS5765656A (en) * 1980-10-08 1982-04-21 Hitachi Ltd Limited view diffraction image device

Also Published As

Publication number Publication date
JPH0542102B2 (en) 1993-06-25

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