JPS6048072B2 - Thin film conductor pattern - Google Patents

Thin film conductor pattern

Info

Publication number
JPS6048072B2
JPS6048072B2 JP13131778A JP13131778A JPS6048072B2 JP S6048072 B2 JPS6048072 B2 JP S6048072B2 JP 13131778 A JP13131778 A JP 13131778A JP 13131778 A JP13131778 A JP 13131778A JP S6048072 B2 JPS6048072 B2 JP S6048072B2
Authority
JP
Japan
Prior art keywords
conductor pattern
hairpin
thin film
film conductor
narrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13131778A
Other languages
Japanese (ja)
Other versions
JPS5558594A (en
Inventor
明 平野
尚武 折原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13131778A priority Critical patent/JPS6048072B2/en
Publication of JPS5558594A publication Critical patent/JPS5558594A/en
Publication of JPS6048072B2 publication Critical patent/JPS6048072B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、エレクトロマイグレーションを防止するよう
にしたバブル制御回路に用いられる薄膜導体パターンに
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film conductor pattern used in a bubble control circuit designed to prevent electromigration.

磁気バブルドメインの転送等の制御(以下バブル制御と
略称する)を行なうものにトランスファゲート、ブロツ
クレプリケータ、アナイレータ、ジェネレータ、レプリ
ケータ等があるが、これらは殆んどが導体パターンを備
えており、該導体パターンに電流を流して局部的な磁界
を作り、バブル制御を行なう。
There are transfer gates, block replicators, anilators, generators, replicators, etc. that control the transfer of magnetic bubble domains (hereinafter referred to as bubble control), but most of these are equipped with conductive patterns and Bubble control is performed by passing current through the conductor pattern to create a local magnetic field.

例えば第1図Aはバブルメモリのトランスファゲート部
を示し、導体部10と多数の転送用パーマロイ磁性パタ
ーン5、6、7・・・・・・からなる。
For example, FIG. 1A shows a transfer gate section of a bubble memory, which consists of a conductor section 10 and a large number of permalloy magnetic patterns 5, 6, 7, . . . for transfer.

これらは一軸磁気異方性のバブル用磁性基板上に、導体
パターン10、転送用磁性パターン5、6、7・・・・
・・の二層構造で形成される。動作の一例を簡単に説明
すると、第1図Bに示す如く回転する駆動磁界HRが磁
界方向HR、を向くとき、磁性パターン5には位置1に
バブル吸引磁極ができバブルは位置1に吸着する。次い
て駆動磁界が方向HR。、HR。、HR。を向くとき磁
極は2、3、4にでき、バブルは該位置に次々に移動す
る。次いで駆動磁界が方向HR、を向くときバブルは磁
性パ・ターン7に生じたバブル吸引磁極1’に移り、以
後駆動磁界が方向HR。、HR3・・・・・・と変るに
つれてバブルは位置2 ′、3′ ・・・・・・に移つ
て行く。バブルが磁性パターン8の位置1″にあるとき
導体パターン1?にそのヘアピン状部の内部にバブル反
フ搬磁界、従つて外部にバブル吸引磁界を作る極性にパ
ルス電流を流すと、駆動磁界HRが方向HR2を向いて
も位置aへは行くことができず、位置を附近にとどまる
。そして次に駆動磁界が方向HR。、HR。・・・・・
・を向くときバブルは位置c、d・・・5 ・・・へ移
動し、磁性パターン11、12、13、・・・・・・で
構成される他の伝播路へ移つて行く。バブルジェネレー
タ、レプリケータなども同様でヘアピン状導体パターン
に電流を流してバブル発生、バブル分割などを行なう。
この電流値、特に電流密度は導体パターンが薄膜で作ら
れるので相当に高い。そして長時間使用すると断線事故
を生じやすい傾向がある。この断線事故を詳細に検討し
たところ、断線部はある特徴を有することが分つた。第
2図を参照しながらこれを以下説明する。第2図は従来
のトランスファゲート等における薄膜導体パターンの一
部を示している。
These are a conductor pattern 10, transfer magnetic patterns 5, 6, 7, etc. on a uniaxial magnetic anisotropic bubble magnetic substrate.
It is formed with a two-layer structure. To briefly explain an example of the operation, when the rotating driving magnetic field HR faces in the magnetic field direction HR as shown in FIG. . Next, the driving magnetic field is in the direction HR. , H.R. , H.R. When facing, the magnetic poles are 2, 3, and 4, and the bubble moves to the corresponding positions one after another. Next, when the driving magnetic field is directed in the direction HR, the bubble moves to the bubble attracting magnetic pole 1' generated in the magnetic pattern 7, and thereafter the driving magnetic field is directed in the direction HR. , HR3, etc., the bubble moves to positions 2', 3', and so on. When the bubble is at position 1'' of the magnetic pattern 8, when a pulse current is passed through the conductor pattern 1 with a polarity that creates a bubble anti-propagating magnetic field inside the hairpin-shaped portion and a bubble attracting magnetic field outside, the driving magnetic field HR Even if it faces direction HR2, it cannot go to position a and remains in the vicinity.Then, the driving magnetic field is directed in direction HR., HR.
When facing . . . , the bubble moves to positions c, d . . . , 5 . Bubble generators, replicators, etc. are similar in that they generate and split bubbles by passing current through a hairpin-shaped conductor pattern.
This current value, especially the current density, is quite high because the conductor pattern is made of a thin film. And when used for a long time, there is a tendency for disconnection accidents to occur. A detailed study of this disconnection accident revealed that the disconnection section had certain characteristics. This will be explained below with reference to FIG. FIG. 2 shows a part of a thin film conductor pattern in a conventional transfer gate or the like.

図示の如く導体パターン10は略U字状の細幅ヘアピン
状部10aとその両脚端につらなり該ヘアピン状部と直
交する広幅基部10b,10cからなり、左右対称をな
している。この導体パターン10に電圧を印加して電流
1を流すと、ヘアピン状部に前述のバブル制御用磁界が
発生するが、か)る動作を長期間行なわせると部分A,
Bl特に部分Aに断線20が生じる傾向がある。これは
次のように考えられる。即ち電流1が流れるとその電流
と反対方向に電子が移動するが、この電子流の運動エネ
ルギが導体パターン10の金属原子に伝わり、その金属
原子が活動的となつて、原子結合を破つて移動し始める
。この現象は一般にエレクトロマイグレーションと呼ば
れている。この現象によつて導体パターン10に欠があ
き、そのため当該部分の断面積が小となつて電流密度が
高まり、エレークトロマイグレーシヨンが更に活発に行
なわれて遂には断線するに至る。断線発生箇所は斜線部
A,Bである確率が高く、そして特に斜線部Aでは2/
3、斜線部Bでは1/3の割合で前者で発生する確率が
高い。このように、導体パターンをζ構成する金属の種
類によつても異なるが、断線は一般にマイナス側(部分
Bも折曲点を両端とする10aの一方の電流路でみると
マイナス側である)で多発するといつた傾向がある。こ
れはマイナス側での電子の運動エネルギが大きく、エレ
ク5トロマイグレーシヨンが活発に行なわれるためと考
えられる。本発明は、か)る点に着眼して案出されたも
ので、略U字状の細幅ヘアピン状部とその両脚端につら
なり該ヘアピン状部と交叉する方向の広幅基4部を有す
る磁気バブルドメイン制御用の薄膜導体パターンであつ
て、該細幅ヘアピン状部における通電方向で見てマイナ
ス側の導体パターンの電流密度を、幅を広くする等の手
段によりプラス側のそれより小さくしたことを特徴とす
るものである。
As shown in the figure, the conductor pattern 10 consists of a substantially U-shaped narrow hairpin portion 10a and wide base portions 10b and 10c which are connected to both ends of the hairpin portion and are orthogonal to the hairpin portion, and are symmetrical. When a voltage is applied to this conductor pattern 10 and a current 1 is caused to flow, the above-mentioned bubble control magnetic field is generated in the hairpin-shaped part.
There is a tendency for wire breakage 20 to occur in Bl, especially in portion A. This can be thought of as follows. That is, when current 1 flows, electrons move in the opposite direction to the current, but the kinetic energy of this electron flow is transmitted to the metal atoms of the conductor pattern 10, and the metal atoms become active, breaking atomic bonds and moving. Begin to. This phenomenon is generally called electromigration. This phenomenon causes gaps in the conductor pattern 10, which reduces the cross-sectional area of the portion, increases current density, and further activates electromigration, eventually leading to disconnection. There is a high probability that the disconnection occurs in the shaded areas A and B, and especially in the shaded area A, the probability is 2/
3. In the shaded area B, the former has a high probability of occurring at a rate of 1/3. In this way, although it differs depending on the type of metal that makes up the conductor pattern, the disconnection is generally on the negative side (portion B is also on the negative side when viewed from one current path of 10a with the bending point as both ends). There is a tendency for it to occur frequently. This is considered to be because the kinetic energy of electrons on the negative side is large and electromigration is actively performed. The present invention has been devised with attention to the above point, and has a substantially U-shaped narrow hairpin portion and four wide base portions that are connected to both ends of the hairpin portion and extend in a direction that intersects the hairpin portion. A thin film conductor pattern for magnetic bubble domain control, in which the current density of the conductor pattern on the negative side viewed from the direction of current flow in the narrow hairpin-shaped portion is made smaller than that on the positive side by means such as widening the width. It is characterized by this.

次に実施例を参照しながら本発明の詳細な説明する。第
3図は本発明の第1の実施例を示す。
Next, the present invention will be described in detail with reference to Examples. FIG. 3 shows a first embodiment of the invention.

同図では第2図と同様に導体パターン10の1部分を示
すが、この図に示すように導体パターン10のヘアピン
状部10aのマイナス側10a1をプラス側10a2よ
り幅広くしてある。導体パターン10の幅をこのように
マイナス側10a1で一様に幅広くフすると、そこに流
れる電流の密度が小さくなる。従つてそこに流れる電子
の密度も小になり、エレクトロマイグレーション現象は
起こりにく)なる。しかも幅が広いからエレクトロマイ
グレーションにより若干穴または欠損部が生じても断線
には起りにくく、こうして長期間使用しても導体パター
ンを断線させるようなことがなくなる。なお、導体パタ
ーンの幅を広げるかわりに、該導体パターンの厚みを大
にしてもよく、更にはこれらを併用することも考えられ
る。このように導体パ”ターン10のマイナス側の幅を
広くすれば、第2図に示したA(7)箇所での断線発生
を防ぐことができるが、今度はBの箇所て断線が発生す
ることも考えられ、そこで、これら両箇所共に幅を広げ
たものが第4図に示す実施例である。第4図は本発明の
第2の実施例を示す。
This figure shows a portion of the conductor pattern 10 as in FIG. 2, but as shown in this figure, the minus side 10a1 of the hairpin-shaped portion 10a of the conductor pattern 10 is made wider than the plus side 10a2. When the width of the conductor pattern 10 is made uniformly wide on the negative side 10a1 in this way, the density of the current flowing there becomes smaller. Therefore, the density of electrons flowing there is also reduced, making electromigration less likely to occur. Furthermore, since the width is wide, even if a few holes or missing portions are formed due to electromigration, it is unlikely to cause wire breakage, and thus the conductor pattern will not be broken even after long-term use. Note that instead of increasing the width of the conductor pattern, the thickness of the conductor pattern may be increased, and it is also possible to use these in combination. By increasing the width of the negative side of the conductor pattern 10 in this way, it is possible to prevent the occurrence of a disconnection at point A (7) shown in Figure 2, but this time a disconnection will occur at point B. Therefore, the embodiment shown in Fig. 4 is an embodiment in which both of these parts are widened. Fig. 4 shows a second embodiment of the present invention.

本例では第2図に示した断線発生の確率が高い箇所A,
B共に当該部分の幅を広くしてある。このようにすると
、両箇所A,Bでの電流密度が小さくなつて、前述と同
様の理由て断線の発生を防ぐことができ、導体パターン
10の寿命を長くすることができる。しかしながら実際
に使用する場合は、第4図の方式では箇所A<5Bでは
発生する磁界の強さまたはその分布状態が変わるので、
場合によつては第4図に示す導体パターンは好ましくな
く、第3図のパターンがよいこともあり得る。勿論この
導体パターンはトランスファゲートだけでなく、前記の
プロツクレプリケータ等の導体パターンにも適用できる
In this example, the location A where the probability of wire breakage occurring is high as shown in Figure 2,
In both B, the width of the relevant part is widened. In this way, the current density at both locations A and B is reduced, and the occurrence of wire breakage can be prevented for the same reason as described above, and the life of the conductive pattern 10 can be extended. However, in actual use, in the method shown in Figure 4, the strength of the generated magnetic field or its distribution changes at locations A < 5B, so
In some cases, the conductor pattern shown in FIG. 4 may not be preferable, and the pattern shown in FIG. 3 may be preferable. Of course, this conductor pattern can be applied not only to the transfer gate but also to the conductor pattern of the aforementioned block replicator and the like.

以上詳細に説明したように本発明によれば、バブルの制
御回路における導体パターンに生じるエレクトロマイグ
レーション現象による断線発生を効果的に防ぐことがで
き、その結果該導体パターンの有効寿命を長くすること
ができ、その有益性は極めてて大である。
As explained in detail above, according to the present invention, it is possible to effectively prevent the occurrence of disconnection due to the electromigration phenomenon occurring in the conductor pattern in the bubble control circuit, and as a result, the effective life of the conductor pattern can be extended. Yes, it is extremely useful.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図Aは従来のバブルメモリにおける導体パターンと
転送用パーマロイ磁性パターンの例を示す部分平面図、
同図Bは回転磁界の磁界方向を示す説明図、第2図は従
来のトランスファゲートの導体パタンの形状を示す平面
図、第3図および第4図は本発明の実施例を示す平面図
てある。
FIG. 1A is a partial plan view showing an example of a conductive pattern and a permalloy magnetic pattern for transfer in a conventional bubble memory;
FIG. 2 is a plan view showing the shape of a conductor pattern of a conventional transfer gate, and FIGS. 3 and 4 are plan views showing an embodiment of the present invention. be.

Claims (1)

【特許請求の範囲】 1 略U字状の細幅ヘアピン状部とその両脚端につらな
り該ヘアピン状部と交叉する方向の広幅基部を有する磁
気バブルドメイン制御用の薄膜導体パターンであつて、
該細幅ヘアピン状部における通電方向で見てマイナス側
の導体パターンの電流密度を、幅を広くする等の手段に
よりプラス側のそれより小さくしたことを特徴とする薄
膜導体パターン。 2 細幅ヘアピン状部のマイナス側の一方の脚部全体を
プラス側の他方の脚部全体より広幅にしたことを特徴と
する特許請求の範囲第1項記載の薄膜導体パターン。 3 細幅ヘアピン状部とマイナス側の広幅基部との連結
部近傍、および該細幅ヘアピン状部の折返し部のプラス
側を局部的に広幅にしたことを特徴とする特許請求の範
囲第1項記載の薄膜導体パターン。
[Scope of Claims] 1. A thin film conductor pattern for controlling a magnetic bubble domain, which has a substantially U-shaped narrow hairpin portion and a wide base portion that is connected to both leg ends of the hairpin portion and intersects the hairpin portion, comprising:
A thin film conductor pattern characterized in that the current density of the conductor pattern on the negative side in the narrow hairpin-shaped portion when viewed in the current direction is made smaller than that on the positive side by means such as increasing the width. 2. The thin film conductor pattern according to claim 1, wherein one entire leg on the negative side of the narrow hairpin-shaped portion is made wider than the entire other leg on the positive side. 3. Claim 1, characterized in that the vicinity of the connecting part between the narrow hairpin-shaped part and the wide base on the negative side, and the positive side of the folded part of the narrow hairpin-shaped part are locally widened. Thin film conductor pattern described.
JP13131778A 1978-10-25 1978-10-25 Thin film conductor pattern Expired JPS6048072B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13131778A JPS6048072B2 (en) 1978-10-25 1978-10-25 Thin film conductor pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13131778A JPS6048072B2 (en) 1978-10-25 1978-10-25 Thin film conductor pattern

Publications (2)

Publication Number Publication Date
JPS5558594A JPS5558594A (en) 1980-05-01
JPS6048072B2 true JPS6048072B2 (en) 1985-10-25

Family

ID=15055114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13131778A Expired JPS6048072B2 (en) 1978-10-25 1978-10-25 Thin film conductor pattern

Country Status (1)

Country Link
JP (1) JPS6048072B2 (en)

Also Published As

Publication number Publication date
JPS5558594A (en) 1980-05-01

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