JPS6047492A - Division for semiconductor laser wafer - Google Patents

Division for semiconductor laser wafer

Info

Publication number
JPS6047492A
JPS6047492A JP58156726A JP15672683A JPS6047492A JP S6047492 A JPS6047492 A JP S6047492A JP 58156726 A JP58156726 A JP 58156726A JP 15672683 A JP15672683 A JP 15672683A JP S6047492 A JPS6047492 A JP S6047492A
Authority
JP
Japan
Prior art keywords
semiconductor laser
wafers
sheet
divided
laser wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58156726A
Other languages
Japanese (ja)
Inventor
Yuzo Fujimura
祐三 藤村
Koichi Kawamura
河村　幸一
Masanobu Takada
高田　政信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58156726A priority Critical patent/JPS6047492A/en
Publication of JPS6047492A publication Critical patent/JPS6047492A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive not to scatter any of semiconductor laser chips after being divided by a method wherein rectangular semiconductor laser wafers formed by cleaving and dividing a semiconductor laser wafer are scribed, and after that, the wafers are adhered on a sticky sheet, and at the same time, are covered with a thin sheet and divided. CONSTITUTION:Rectangular semiconductor laser wafers 1 are scribed, and after that, the wafers 1 are adhered on a thin sticky sheet 2 and are covered with a thin sheet 3 like cellophane. Then, the wafers 1 are wound around a circular cylinder 4 having a constant temperature, while tensions T and T are being applied to both ends of the two sheets, and the wafers 1 are divided. The sheets are stretched by the temperature of the circular cylinder 4 and the tensions T and T, and semiconductor laser chips 6 have an interval in a straight-line state between each of them, after being divided. Any of the divided chips 6 doesn't scatter by the sheet 2.

Description

【発明の詳細な説明】 く技術分野２発明の目的〉 本発明は、短冊状半み体レーザーウェハの分割方法に係
り、特に、分割後の半導体レーサーチップが飛散するこ
とのない方法の提供を目的とするものである。[Detailed Description of the Invention] Technical Field 2 Object of the Invention The present invention relates to a method for dividing a rectangular half-half laser wafer, and in particular, to provide a method in which semiconductor laser chips after the division are not scattered. This is the purpose.

〈実施例〉 第１図（断面図）及び第２図（斜視図）に示すように、
スクライブ後の短冊状半導体レーザーウェハ１を薄い粘
着シート２に貼り付け、セロ・・ンのような薄いシート
３で覆い被ぜ、該二枚のシートの両端に張力Ｔを与えな
がら、一定温度（ヒーター５内蔵）の円柱４に巻きつけ
分割する。シートは温度と張力で伸び、分割後の半導体
レーザーチップ６は、−直線状に間隔をもつ。分割され
たチップは粘着シートにより飛散することはない。<Example> As shown in Fig. 1 (cross-sectional view) and Fig. 2 (perspective view),
After scribing, the strip-shaped semiconductor laser wafer 1 is pasted on a thin adhesive sheet 2, covered with a thin sheet 3 such as cello... Wrap it around the cylinder 4 of the heater 5 (with built-in heater 5) and divide it. The sheet is stretched by temperature and tension, and the semiconductor laser chips 6 after being divided have linear intervals. The divided chips will not be scattered due to the adhesive sheet.

く効果〉 以上説明したように本発明によれば、分割後の半導体レ
ーザーチップが飛散することのない、きわめて有用な半
導体レーザーウェハの分割方法を得ることができるもの
である。Effects> As explained above, according to the present invention, it is possible to obtain an extremely useful method for dividing a semiconductor laser wafer in which the semiconductor laser chips after the division are not scattered.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は断面図、第２図は斜視図である。 符号の説明 Ｉ：短冊状半導体レーザーウニ・・、２８粘ス゛″１シ
ート、３：薄いシート、４：円柱、５　ヒーター、６：
半導体レーザーチップ、Ｔ：張力。 代理人　弁理士　福　士　愛　彦（他２名）手続補正書 （特許庁　殿） １、事ヂ１の表示 特願昭５．８−１５６７２６ ２、発明の名称 半導体レーザーウェハの分割方法 ３、補正をする者 事件との関係　特許出願人 ４、代理人 （−１所　曇５４５大阪市阿倍野区長池町２２番２２号
別紙のとおり　以　上 ２、特許請求の範囲 した後、粘着シートに貼り伺けると共に、セロハンの様
な薄いシートで覆い被せ、該両シートの両端に張力を与
えながら、一定温度の円柱に巻きつけることによって、
」１記短冊状半導体レーザーウェハを分割することを特
徴とする半導体レーザーウェハの分割方法。FIG. 1 is a sectional view, and FIG. 2 is a perspective view. Explanation of symbols I: Strip-shaped semiconductor laser urchin..., 28 viscosity 1 sheet, 3: Thin sheet, 4: Cylinder, 5 Heater, 6:
Semiconductor laser chip, T: tension. Agent Patent attorney Aihiko Fukushi (and 2 others) Procedural amendment (Japan Patent Office) 1. Indication of item 1 Patent application 5.8-156726 2. Name of the invention Method for dividing semiconductor laser wafers 3. Amendment Relationship with the case of a person who does , by covering it with a thin sheet such as cellophane and wrapping it around a cylinder at a constant temperature while applying tension to both ends of the sheet.
1. A method for dividing a semiconductor laser wafer, which comprises dividing a rectangular semiconductor laser wafer.

Claims (1)

【特許請求の範囲】[Claims] １、スクライブ後の短冊状半導体レーザーウェハを粘着
シートに貼りイリけると共に、セロハンの様な薄いシー
トで覆い被せ、該両シートの両端に張力を与えながら、
一定温度の円柱に巻きつけることによって、上記短冊状
半導体レーザーウェハを分割することを特徴とする半導
体レーザーウェハの分割方法。1. Paste the scribed strip-shaped semiconductor laser wafer on an adhesive sheet, cover it with a thin sheet such as cellophane, and apply tension to both ends of the sheet.
A method for dividing a semiconductor laser wafer, comprising dividing the strip-shaped semiconductor laser wafer by winding it around a cylinder at a constant temperature.
JP58156726A 1983-08-25 1983-08-25 Division for semiconductor laser wafer Pending JPS6047492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58156726A JPS6047492A (en) 1983-08-25 1983-08-25 Division for semiconductor laser wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58156726A JPS6047492A (en) 1983-08-25 1983-08-25 Division for semiconductor laser wafer

Publications (1)

Publication Number Publication Date
JPS6047492A true JPS6047492A (en) 1985-03-14

Family

ID=15633985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58156726A Pending JPS6047492A (en) 1983-08-25 1983-08-25 Division for semiconductor laser wafer

Country Status (1)

Country Link
JP (1) JPS6047492A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296578A (en) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd Separaton of semiconductor crystal
JPH01270288A (en) * 1988-04-21 1989-10-27 Nec Corp Manufacture of semiconductor laser
US5238876A (en) * 1989-07-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of dividing semiconductor wafer using ultraviolet sensitive tape
JP2019175927A (en) * 2018-03-27 2019-10-10 株式会社東京精密 Wafer dividing apparatus and method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62296578A (en) * 1986-06-17 1987-12-23 Matsushita Electric Ind Co Ltd Separaton of semiconductor crystal
JPH01270288A (en) * 1988-04-21 1989-10-27 Nec Corp Manufacture of semiconductor laser
US5238876A (en) * 1989-07-21 1993-08-24 Mitsubishi Denki Kabushiki Kaisha Method of dividing semiconductor wafer using ultraviolet sensitive tape
US5332406A (en) * 1989-07-21 1994-07-26 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor device
JP2019175927A (en) * 2018-03-27 2019-10-10 株式会社東京精密 Wafer dividing apparatus and method

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