JPS6042802A - Voltage dependent nonlinear resistor porcelain composition - Google Patents

Voltage dependent nonlinear resistor porcelain composition

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Publication number
JPS6042802A
JPS6042802A JP58151213A JP15121383A JPS6042802A JP S6042802 A JPS6042802 A JP S6042802A JP 58151213 A JP58151213 A JP 58151213A JP 15121383 A JP15121383 A JP 15121383A JP S6042802 A JPS6042802 A JP S6042802A
Authority
JP
Japan
Prior art keywords
voltage
varistor
nonlinear resistor
dependent nonlinear
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151213A
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Japanese (ja)
Other versions
JPH04568B2 (en
Inventor
野井 慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58151213A priority Critical patent/JPS6042802A/en
Publication of JPS6042802A publication Critical patent/JPS6042802A/en
Publication of JPH04568B2 publication Critical patent/JPH04568B2/ja
Granted legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電子機器や電気機器で発生する異常電圧、ノイ
ズ、静電気等を吸収または除去する(BazCaySr
l z y)Ti03を主成分とする電圧依存性非直線
抵抗体を得るだめの磁器組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention absorbs or removes abnormal voltage, noise, static electricity, etc. generated in electronic and electrical equipment (BazCaySr.
l z y) This invention relates to a ceramic composition for obtaining a voltage-dependent nonlinear resistor containing TiO3 as a main component.

従来例の構成とその問題点 従来、各種電気機器、電子機器における異常高電圧(以
下ザージと呼ぶ)の吸収、雑音の除去。
Conventional structure and its problems Traditionally, it has been used to absorb abnormal high voltage (hereinafter referred to as surge) and remove noise in various electrical and electronic devices.

火花消去などのために電圧依存性非直線抵抗特性を有す
るSiCバリスタやZnO系バリスタなどが使用されて
いた。このようなバリスタの電圧−電流特性は近似的に
次式のように表わすことができる。
SiC varistors, ZnO-based varistors, and the like having voltage-dependent nonlinear resistance characteristics have been used to eliminate sparks and the like. The voltage-current characteristics of such a varistor can be approximately expressed as follows.

I −(V/C) ここで、工は電流、Vは電圧、Cはバリスタ固有の定数
であり、αは電圧非直線指数である。
I − (V/C) Here, Δ is the current, V is the voltage, C is a constant specific to the varistor, and α is the voltage nonlinear index.

SiOバリスタのαは2〜7程度、 ZnO系バリスタ
ではαが60にもおよぶものがある。このようなバリス
タはサージのように比較的高い電圧の吸収に優れた性能
を有しているが、誘電率が低く固有静電容部が小さいた
め、バリスタ電圧以下の低い電圧の吸収(例えばノイズ
など)に対してはほとんど効果を示さず、また誘電損失
角(tanδ)も5〜10%と大きい。
The α of SiO varistors is about 2 to 7, and the α of some ZnO-based varistors is as high as 60. Such varistors have excellent performance in absorbing relatively high voltages such as surges, but because of their low dielectric constant and small specific capacitance, they are difficult to absorb low voltages below the varistor voltage (e.g. noise, etc.). ), and the dielectric loss angle (tan δ) is as large as 5 to 10%.

一方、これらのノイズなどの除去には組成や焼成条件を
適当に選択することにより、見かけの誘電率が5×10
4〜6×104程度でtanδが1チ前後の半導体磁器
コンデンサが利用されている。
On the other hand, in order to remove these noises, the apparent dielectric constant can be reduced to 5×10 by appropriately selecting the composition and firing conditions.
Semiconductor ceramic capacitors with a size of about 4 to 6×10 4 and a tan δ of about 1 inch are used.

巻 しかし、この半導体磁侍コンデンサはサージなどにより
ある限度以上の電流が素子に印加されると破壊したり、
コンデンサとしての機能を果たさなくなったりする。
However, this semiconductor magnetic Samurai capacitor may break down if a current exceeding a certain limit is applied to the element due to a surge, etc.
It may no longer function as a capacitor.

上記のような理由で電気機器、電子機器においては、サ
ージ吸収やノイズ除去などの目的のためには、通常バリ
スタとコンデンサ及び他の部品(例えばコイル)とを組
み合わせて使用され、例えばノイズフィルタはこのよう
な構成になっている。
For the reasons mentioned above, in electrical and electronic equipment, varistors are usually used in combination with capacitors and other parts (e.g. coils) for purposes such as surge absorption and noise removal.For example, noise filters are The configuration is like this.

第1図は一般的な従来のノイズフィルタ回路を示し、第
2図はバリスタとコンデンサ及びコイルを組み合わせて
構成された従来のノイズフィルタ回路を示しており、1
はコイル、2はコンデンサ、3はバリスタである。
Figure 1 shows a general conventional noise filter circuit, and Figure 2 shows a conventional noise filter circuit configured by combining a varistor, a capacitor, and a coil.
is a coil, 2 is a capacitor, and 3 is a varistor.

しかし、このよう々第2図に示す構成は機器内部におけ
る部品点数が多くなる上に機器の小形化動向に相反する
という欠点を有していた。
However, the configuration shown in FIG. 2 has the drawbacks of increasing the number of parts inside the device and contradicting the trend toward miniaturization of devices.

発明の目的 本発明は上記のような従来のサージ吸収、ノイズ除去に
おける欠点を除去し、バリスタとコンデンサの両方の機
能を有し、1個の素子でサージ吸収及びノイズ除去が可
能な複合機能を有し、なおかつサージの印加による非直
線指数、バリスタ電圧の特性変化の少ない電圧依存性非
直線抵抗体磁器組成物を提供することを目的としている
Purpose of the Invention The present invention eliminates the drawbacks of conventional surge absorption and noise removal as described above, and provides a composite function that has the functions of both a varistor and a capacitor and can perform surge absorption and noise removal with a single element. It is an object of the present invention to provide a voltage-dependent non-linear resistor ceramic composition which has the following characteristics and which exhibits less change in the characteristics of the non-linear index and varistor voltage due to the application of a surge.

発明の構成 この目的を達成するだめに本発明の電圧依存性非直線抵
抗体磁器組成物は、(Bax CaySr+−X−y)
TiO3(但し、Xは0001〜O−300+ 3’は
0.001〜0300の範囲の値)を99.995〜9
6;000mo1%、Nb2O5,Ta2O,、CaO
21wo3.La2O3゜D72031 Nd2O31
Y2”31 Sm2O31Pr6O11からなる群から
選択された少々くとも1種類以上の金属酸化物を0.0
05〜5.000 mo1%含有する電圧依存性非直線
抵抗体磁器組成物に係わるものである。
Structure of the Invention In order to achieve this object, the voltage-dependent nonlinear resistor ceramic composition of the present invention has the following characteristics: (Bax CaySr+-X-y)
TiO3 (where X is a value in the range of 0001 to O-300 + 3' is a value in the range of 0.001 to 0300) to 99.995 to 9
6;000mo1%, Nb2O5, Ta2O,, CaO
21wo3. La2O3゜D72031 Nd2O31
Y2”31 0.0% of at least one metal oxide selected from the group consisting of Sm2O31Pr6O11
This relates to a voltage-dependent nonlinear resistor ceramic composition containing 05 to 5.000 mo1%.

また、上記組成物にさらに非直線指数の改善に寄与する
成分としテAg2O,Cub、 B2O3,Al□03
゜Co2O3,MnO□、 Sin、、 、 Na2Q
、からなる群から選択された少なくとも1種類以上の金
属酸化物を09001〜3゜OOOmo1%を加えてな
る電圧依存性非直線抵抗体磁器組成物に係わるものであ
る。
In addition, the above composition further includes components that contribute to improving the nonlinear index, such as Ag2O, Cub, B2O3, Al□03.
゜Co2O3, MnO□, Sin, , Na2Q
The present invention relates to a voltage-dependent nonlinear resistor ceramic composition prepared by adding 1% of at least one metal oxide selected from the group consisting of 09001 to 3°OOOmol.

実施例の説明 以下に本発明を実施例により具体的に説明する。Description of examples The present invention will be specifically explained below using examples.

SrCO3,BaCO3,CaC2O4,Ti、02を
下記の第1表に示しだ組成比になるようにそれぞれ秤量
配合し、ボールミルなどで約12時間粉砕、混合し、乾
燥う□え後再び粉砕シフ、プVユ圧4.。t/、< f
 80φxsoimに仮成形する。上記成形体を120
0℃で4時間焼成し、再びポール〉ルなどで約12時間
粉砕して主原料となる( BazCaySrl z y
)TiO3粉末(以下これを第1成分と呼ぶ)を作成し
た。
SrCO3, BaCO3, CaC2O4, Ti, and 02 were weighed and blended to give the composition ratio shown in Table 1 below, and ground and mixed in a ball mill for about 12 hours. V pressure 4. . t/, < f
Temporarily mold to 80φxsoim. The above molded body is 120
It is baked at 0℃ for 4 hours, and then ground again for about 12 hours using a pole to become the main raw material (BazCaySrl zy
) TiO3 powder (hereinafter referred to as the first component) was prepared.

次に、Nh、05’ 、 Ta2O3,WO3,Dy2
O3,La、、03゜Y2O3,Nd、、03!−Ca
O2粉末(以下第2成分と呼ぶ)とAg2O,Cub、
 B2O3,Al2O3,MnO2,5in2. Na
、0粉末(以下第3成分と呼、ぶ)を下記の第1表に示
した組成比になるように秤量する。
Next, Nh, 05', Ta2O3, WO3, Dy2
O3, La,,03°Y2O3,Nd,,03! -Ca
O2 powder (hereinafter referred to as the second component) and Ag2O, Cub,
B2O3, Al2O3, MnO2, 5in2. Na
, 0 powder (hereinafter referred to as the third component) was weighed so as to have the composition ratio shown in Table 1 below.

次に、上記第1〜3成分を12時間乾式混合し、今市l
に対して約10wt%のポリビニルアルコールなどの壱
機結合剤を加えて造粒した後、プレス圧i、o t/c
、4で10φX 1 ” mmの円板状に成形する。
Next, the above first to third components were dry mixed for 12 hours, and
After granulation by adding about 10 wt% of a binder such as polyvinyl alcohol, press pressure i, o t/c
, 4 to form a disk shape of 10φ×1” mm.

上記成形体を空気中で1000℃、2時間焼成した後、
N2 (9o多)+H2(10襲)の還元雰囲気中で約
1400℃、2時間焼成し、次に再び空気中で1200
℃、3時間焼成して第3図に示す素子4を得た。
After baking the above molded body in air at 1000°C for 2 hours,
Calcinate at approximately 1400°C for 2 hours in a reducing atmosphere of N2 (90%) + H2 (10 times), then heat again in air at 1200°C.
C. for 3 hours to obtain element 4 shown in FIG.

次に、上記素子4の両平面に銀などの導電性ペーストを
塗布し560℃で焼付ける≧とにより電極6,6を形成
した。
Next, electrodes 6, 6 were formed by applying a conductive paste such as silver to both surfaces of the element 4 and baking it at 560°C.

上記の操作によって得られた素子の特性を以下の第2表
に示す。
The characteristics of the device obtained by the above operations are shown in Table 2 below.

(以下余白) ここで、素子のバリスタとしての特性評価は上述した電
圧−電流特性式 %式%10) (ただし、■は電流、■は電圧、Cはバリスタ固有の定
数、αは非直線指数)におけるαとCによって行うこと
が可能である。しかし、Cの正確な測量が困難であるた
め、本発明においては1mAのバリスタ電流を流した時
の単位厚み当りのバリスタ電圧(以下V1 B )Jf
nmと呼ぶ)の値と、α−1/Iog(V 1om1竿
* mA Xただし、VlomAは10mAのバリスタ
電流を流しだ時のバリスタ電圧、vlm又は1mAのバ
リスタ電流を流した時のバリスタ電圧〕の値によりバリ
スタとしての特性評価を行っている。また、コンデンサ
としての特れ評価は測定周波数1KH2における誘電率
εで行っている。上記のデータは還元雰囲気における焼
成温度、時間を1400℃+2時間、空気中での焼成温
度、時間を1200℃、3時間で行ったものである。
(Leaving space below) Here, the characteristic evaluation of the element as a varistor is the voltage-current characteristic formula % formula %10) (However, ■ is the current, ■ is the voltage, C is a constant specific to the varistor, and α is a nonlinear index. ) can be done by α and C in ). However, since it is difficult to accurately measure C, in the present invention, the varistor voltage per unit thickness (hereinafter V1 B) when a varistor current of 1 mA flows (hereinafter referred to as V1 B) Jf
(referred to as nm) and the value of α-1/Iog (V 1om1 rod * mA Characteristics as a varistor are evaluated based on the value of .Furthermore, characteristics as a capacitor are evaluated using the dielectric constant ε at a measurement frequency of 1KH2.The above data is based on the firing temperature and time of 1400℃ + 2 hours in a reducing atmosphere. The firing temperature and time were 1200° C. and 3 hours in air.

なお、サージ電圧が印加された後の非直線指数の変化(
Δα)及びバリスタ電圧の変化(ΔV)は2xvの直流
定電圧電源に2・0μFのコンデンサを接続し、5秒間
隔で上記コンデンサの充電エネルギーをバリスタに印加
゛することを3回繰返し、その後の非直線指数(α′)
、バリスタ電圧(V′)を測定し、次式によりそれぞれ
の変化率をめて示した。
In addition, the change in the nonlinear index after the surge voltage is applied (
Δα) and the change in varistor voltage (ΔV) are calculated by connecting a 2.0μF capacitor to a 2xV DC constant voltage power supply, applying the charging energy of the capacitor to the varistor three times at 5 second intervals, and then Nonlinear index (α′)
, the varistor voltage (V') was measured, and the rate of change was calculated using the following equation.

α′−α Δα二□x1o、o(%) 以上に示しだように(BaxCay& + x−y)T
iO3CI X及びyが0.Oo1未渦の場合非直線指
数αのばらつきが大きく、パルスに対する非直線指数α
の変化率Δα、バリスタ電圧Vの変化率ΔVが大きく耐
パルス特性が悪い。また、X及びyがQ300を超える
と非直線指数が低下すると共に耐パルス特性も悪くなる
二また、x>o、3. o、oo1≦y≦0.300の
場合には耐パルス特性が実質的に改善されず、特性のば
らつきが大きくなる。
α′−α Δα2□x1o, o (%) As shown above, (BaxCay & + x−y)T
iO3CI X and y are 0. Oo1 In the case of non-vortex, the variation in the nonlinear index α is large, and the nonlinear index α for the pulse
The rate of change Δα of the varistor voltage V and the rate of change ΔV of the varistor voltage V are large, and the pulse resistance characteristics are poor. Furthermore, if X and y exceed Q300, the nonlinear index will decrease and the pulse resistance will also deteriorate. In the case of o, oo1≦y≦0.300, the pulse resistance characteristics are not substantially improved and variations in characteristics become large.

このように削パルス特性は、 ゛〈〈 0.001=X:Q、300,0.001≦y≦o、3
o。
In this way, the cutting pulse characteristics are as follows:
o.

の範囲から1つの値がずれただけでも悪く、なる。Even if just one value deviates from the range, it becomes bad.

また、第2成分は添加量がO,’OOs mol 4未
満では充分な原子価制御が行われず、素子の比抵抗が大
きくなるため、非直線指数、誘電率共に小さくなる。一
方、添加量が5.0OOIIIO1%を超えると焼結性
が悪くなる。
Furthermore, if the amount of the second component added is less than O,'OOs mol 4, sufficient valence control will not be achieved and the specific resistance of the element will increase, resulting in a decrease in both the nonlinear index and the dielectric constant. On the other hand, if the amount added exceeds 1% of 5.0OOIIIO, sinterability deteriorates.

第3成分は添加量が0.005 mol係未満では非直
線指数を大幅に改善すること−はできず、s、oo。
If the amount of the third component added is less than 0.005 mol, the nonlinear index cannot be significantly improved;

mo1%を超えると焼結性が悪くなり、諸性性の劣化を
きだす。
When the mo amount exceeds 1%, sinterability deteriorates and various properties deteriorate.

なお、実施例では第2成分、第3成分の組合せは一部し
か示さなかったが、それぞれ複数側の物質を組合せて規
定した添加量の範囲内であれば同様の効果があることを
確認した。
In addition, although only some combinations of the second and third components were shown in the examples, it was confirmed that the same effect can be obtained if the combination of multiple substances is within the specified addition amount range. .

発明の効果 以上に述べたように、本発明の磁器組成物は主成分とし
て(BazCa、Sr、−x、)Tie、(但し0.0
01≦X≦0.300.0.001≦y≦o、3oOの
範囲の値)を用いることにより、パルスに対する非直線
指数αの変化率Δα及びバリスタ電圧Vの変化率ΔVが
大幅に改善され、パルスに対する信頼性が著しく向上す
る。さらに、第3成分の添加により非直線指数はさらに
改善でき、上記主成分と第3成分を組み合せることによ
り非直線指数が大きく、しかも耐パルス特性に優れ、た
素子が得られる。
Effects of the Invention As described above, the porcelain composition of the present invention contains (BazCa, Sr, -x,)Tie, (However, 0.0
By using values in the range of 01≦X≦0.300.0.001≦y≦o, 3oO, the rate of change Δα of the nonlinear index α and the rate of change ΔV of the varistor voltage V with respect to pulses are significantly improved. , reliability for pulses is significantly improved. Furthermore, the nonlinear index can be further improved by adding a third component, and by combining the above-mentioned main component and the third component, an element with a large nonlinear index and excellent pulse resistance characteristics can be obtained.

上記の素子を使用して第4図に示すような回路を作り、
第5図に示すよう々ノイズ入力人に対して出力状況を調
べた結果、第6図の出力状況曲線Bに示すようにノイズ
をおさえることができだ。
Create a circuit as shown in Figure 4 using the above elements,
As a result of investigating the output situation for a person inputting noise as shown in FIG. 5, it was found that the noise could be suppressed as shown in output situation curve B in FIG.

第6図で7は本発明の素子、8はコイルである。In FIG. 6, 7 is an element of the present invention, and 8 is a coil.

1だ、第1図に示す従来のフィルタ回路の出力状況は第
6図の出力状況曲線Cの通りであり、十分にノイズを除
去していない。第2図に示す従来のバリスタを含むフィ
ルタ回路では本発明による素子を用いた第4図の回路に
類似した効果が得られるが、バリスタを別個に必要とす
るため部品点用した素子は従来にないバリスタとコンデ
ンサの複合機能を有し、しかも耐パルス特性に優れてい
るだめ、従来めノイズフィルタ回路を簡略化し、小形、
高性能、低コスト化に寄与するものであり、各種電気機
器、電子機器のサージ吸収、ノイズ除去に利用が可能で
あり、その実用上の価値は極めて大きい。
1. The output condition of the conventional filter circuit shown in FIG. 1 is as shown by the output condition curve C in FIG. 6, and noise is not removed sufficiently. The conventional filter circuit including a varistor shown in FIG. 2 can obtain an effect similar to the circuit shown in FIG. It has the combined function of a varistor and a capacitor, and has excellent pulse resistance characteristics, so the conventional noise filter circuit has been simplified, and it has become smaller and smaller.
It contributes to high performance and low cost, and can be used for surge absorption and noise removal in various electrical and electronic devices, and its practical value is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図はそれぞれ従来におけるノイズフィルタ
回路を示す回路図、第3図は本発明に」:る磁器組成物
を用いた素子の断面図、第4図は第3図の素子を用いた
ノイズフィルタ回路を示す回路図、第6図は本発明と従
来のノイズフィルタ回路による入力ノイズと出力ノイズ
の状況を示す特性図である。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名s 
1 m 1 第2図 1 第3図 第5図 →固液数CMHI)
Figures 1 and 2 are circuit diagrams showing conventional noise filter circuits, Figure 3 is a sectional view of an element using the ceramic composition of the present invention, and Figure 4 shows the element of Figure 3. FIG. 6 is a circuit diagram showing the noise filter circuit used. FIG. 6 is a characteristic diagram showing the input noise and output noise conditions of the noise filter circuit of the present invention and the conventional noise filter circuit. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 m 1 Fig. 2 1 Fig. 3 Fig. 5 → Solid-liquid number CMHI)

Claims (2)

【特許請求の範囲】[Claims] (1) (BaXCaySrl、)(、−y)、TiO
s (但し、Xは0.001〜O−300、yは0.0
01〜0.300の範囲の値)を99.995−95.
OOOmol %、 Nb2O5゜’ra2051 C
e o、 l W 03 + IA2o31 ”V2O
5l Nd2O3+Y2O3,811203,Pr60
.、からなる群から選択された少なくとも1種類以−ヒ
の金属酸化物を0.005〜5・OOOmol%含有す
ることを特徴とする電圧依存性非直線抵抗体磁器組成物
(1) (BaXCaySrl,)(,-y),TiO
s (However, X is 0.001 to O-300, y is 0.0
01 to 0.300) to 99.995-95.
OOOmol %, Nb2O5゜'ra2051 C
e o, l W 03 + IA2o31 ”V2O
5l Nd2O3+Y2O3, 811203, Pr60
.. 1. A voltage-dependent nonlinear resistor ceramic composition containing 0.005 to 5·00 mol% of at least one metal oxide selected from the group consisting of .
(2) (BaxCaySr、、x、)TiO3(但し
、Xは0001〜o、300.yは0.001〜α30
0の範囲の値)を99+994−92.000m01%
、 Nb2O,。 Ta20s r G602 + W ”315%”、l
 Dy2031 Nd2 ”、tY203. Sm2O
3,Pr60.、からなる群から選択された少なくとも
1種類以上の金属酸化物をo、oos〜s、o o o
 m’o1%、ムg20. CuO+ B、、03. 
Al2O2゜co203. MnO□、 Sin□、 
Ha20からなる群から選択された少なくとも1種類以
上の金属酸化物を0−001〜3.OOOmol %含
有することを特徴とする電圧依存性非直線抵抗体磁器組
成物。
(2) (BaxCaySr,,x,)TiO3 (X is 0001~o, 300.y is 0.001~α30
value in the range of 0) to 99+994-92.000m01%
, Nb2O,. Ta20s r G602 + W “315%”, l
Dy2031 Nd2'', tY203.Sm2O
3, Pr60. At least one metal oxide selected from the group consisting of o, oos~s, o o o
m'o1%, mug20. CuO+ B,,03.
Al2O2゜co203. MnO□, Sin□,
At least one kind of metal oxide selected from the group consisting of Ha20 from 0-001 to 3. A voltage-dependent nonlinear resistor ceramic composition characterized by containing OOO mol %.
JP58151213A 1983-08-18 1983-08-18 Voltage dependent nonlinear resistor porcelain composition Granted JPS6042802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151213A JPS6042802A (en) 1983-08-18 1983-08-18 Voltage dependent nonlinear resistor porcelain composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151213A JPS6042802A (en) 1983-08-18 1983-08-18 Voltage dependent nonlinear resistor porcelain composition

Publications (2)

Publication Number Publication Date
JPS6042802A true JPS6042802A (en) 1985-03-07
JPH04568B2 JPH04568B2 (en) 1992-01-08

Family

ID=15513704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151213A Granted JPS6042802A (en) 1983-08-18 1983-08-18 Voltage dependent nonlinear resistor porcelain composition

Country Status (1)

Country Link
JP (1) JPS6042802A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749669A (en) * 1985-10-25 1988-06-07 Narumi China Corporation Dielectric ceramic composition
US5314651A (en) * 1992-05-29 1994-05-24 Texas Instruments Incorporated Fine-grain pyroelectric detector material and method
US5566046A (en) * 1994-02-18 1996-10-15 Texas Instruments Incorporated Microelectronic device with capacitors having fine-grain dielectric material
CN103172365A (en) * 2011-12-22 2013-06-26 深圳市大富科技股份有限公司 Preparation method of microwave dielectric ceramic material
CN103316664A (en) * 2013-06-25 2013-09-25 桂林理工大学 Visible-light-responded photocatalyst BaTi3Ta4O17 and preparation method thereof
CN109928748A (en) * 2019-04-18 2019-06-25 陕西科技大学 A kind of high temperature efficient La doping linear dielectric ceramic material of energy storage and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749669A (en) * 1985-10-25 1988-06-07 Narumi China Corporation Dielectric ceramic composition
US5314651A (en) * 1992-05-29 1994-05-24 Texas Instruments Incorporated Fine-grain pyroelectric detector material and method
US5566046A (en) * 1994-02-18 1996-10-15 Texas Instruments Incorporated Microelectronic device with capacitors having fine-grain dielectric material
CN103172365A (en) * 2011-12-22 2013-06-26 深圳市大富科技股份有限公司 Preparation method of microwave dielectric ceramic material
CN103172365B (en) * 2011-12-22 2015-05-20 深圳市大富科技股份有限公司 Preparation method of microwave dielectric ceramic material
CN103316664A (en) * 2013-06-25 2013-09-25 桂林理工大学 Visible-light-responded photocatalyst BaTi3Ta4O17 and preparation method thereof
CN109928748A (en) * 2019-04-18 2019-06-25 陕西科技大学 A kind of high temperature efficient La doping linear dielectric ceramic material of energy storage and preparation method thereof

Also Published As

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