JPS604229A - Mounting method of semiconductor element - Google Patents
Mounting method of semiconductor elementInfo
- Publication number
- JPS604229A JPS604229A JP11314583A JP11314583A JPS604229A JP S604229 A JPS604229 A JP S604229A JP 11314583 A JP11314583 A JP 11314583A JP 11314583 A JP11314583 A JP 11314583A JP S604229 A JPS604229 A JP S604229A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- low melting
- melting point
- glass
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Abstract
Description
【発明の詳細な説明】
本発明は、低融点ガラスを用いた半導体素子の搭載方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for mounting a semiconductor element using low melting point glass.
従来より、低融点ガラスを介して半導体素子（ペレット
）を搭載（マウント）する場合は、ペレットを直接低融
点ガラスにマウントする方法が取られていた。Conventionally, when mounting a semiconductor element (pellet) through low-melting glass, a method has been used in which the pellet is directly mounted on the low-melting glass.
しかしこの方法だとペレットとガラスの濡れ性が良くな
く寸法の大きいペレットの場合は熱膨張係数差による応
力集中が生じペレットの破壊を生じた。However, with this method, the wettability between the pellets and the glass was not good, and in the case of large pellets, stress concentration occurred due to the difference in thermal expansion coefficients, resulting in destruction of the pellets.
これを改善する為に、金属被膜を形成する事が考えられ
たが、金属被膜がガラスと門れるのは、金属被膜上に酸
化膜が存在する為であって自然に出来た酸化膜だけでは
必ずしも充分とは言えなかりｆ−０
上述した従来方法の欠点を解決し、大きいベレ、トに於
いても、十分な接着強度を得ることが出来るペレットの
マウント方法を、本発明は提供するものである。In order to improve this, it was considered to form a metal film, but the reason why the metal film can be separated from glass is because there is an oxide film on the metal film, and it is not possible to just form a naturally formed oxide film. The present invention provides a pellet mounting method that solves the above-mentioned drawbacks of the conventional method and can obtain sufficient adhesive strength even on large plates. It is.
すなわち本発明は、ベレット裏面に陽極酸化可能な金属
を被着し、再に該表面を陽極酸化し酸化膜を形成するも
のである。That is, in the present invention, a metal that can be anodized is deposited on the back surface of the pellet, and the surface is anodized again to form an oxide film.
この様にする事により金属膜上に充分厚い酸化膜が形成
されガラスとの語れ性が非常に改善された０
以下本発明の実施例を図面と共に説明する。By doing this, a sufficiently thick oxide film is formed on the metal film, and the compatibility with glass is greatly improved.Embodiments of the present invention will now be described with reference to the drawings.
第１図は、従来のペレットマウント方法を示す図である
。第１Ｎへ）に於いて、ｒ３面にアルミニウムｊ］バ１
をに、（崩又はスパックリング等で被着したペレット２
を」Ｎ止部Ｖこ封ＩＦ用の低融点ガラス３を有するガラ
ス封入パッケージのセラミック基板４上の・〜ヤビイテ
ィ一部に、ペレット搭載用の低融点ガラス５ヶ形成し１
．υ１１熱溶融した上にペレット２を加圧接着後、ωＥ
ｌｌ ｌ、固ｙｔ’ｔ ’ｒるものである（哨１図０３
））。FIG. 1 is a diagram showing a conventional pellet mounting method. 1N), place an aluminum j] bar 1 on the r3 surface.
(Pellet 2 coated with crumbling or spackling, etc.)
5 pieces of low melting glass for pellet loading are formed on the ceramic substrate 4 of the glass sealed package having the low melting glass 3 for the N stop part V and the sealing IF.
．． After pressurizing and bonding pellet 2 on top of υ11, ωE
It's a solid thing.
)).
金属が、ガラスと６．Ｉシるのいよ金Ａ３表面に酸化膜
が存在するｇ％に、Ｌっている。従ってアルミニウム被
Ｉｉへの表面に自然に出来た酸化膜り１、非常に薄い為
、ガラスとの濡れが充分いかない場合が生じる。6. Metal is glass. The amount of g% in which an oxide film exists on the surface of gold A3 is L. Therefore, the naturally formed oxide film 1 on the surface of the aluminum substrate Ii is so thin that it may not be sufficiently wetted with the glass.
第２図は、本発明の一実施例を示すものであるが、ペレ
ット２の裏面にアルミニウム膜１を蒸着又はスパッタリ
ング等で１〜２μ程度被着し、陽極酸化法によりその表
面に陽極酸化膜６を、１ｏｏ。FIG. 2 shows an embodiment of the present invention, in which an aluminum film 1 of about 1 to 2 μm is deposited on the back surface of a pellet 2 by vapor deposition or sputtering, and an anodized film is formed on the surface by an anodizing method. 6, 1oo.
〜２０００Ａ程反カ杉成したペレット２を封止部に封止
用の低融点ガラス３ｙｋ有するガラス封入パッケージの
セラミック基板４上のキャビィティ一部に、ベレット搭
載用の低融点ガラス５を形成しく第２図（Ａ））％加熱
溶融した土にペレット２を加圧接着後、冷却し固着する
ものである（第２図ｅ） ） 、）陽極酸化方法として
は、通常アルミニウムの陽極酸化に使用される、リン酸
、シーウ酸、クロム酸硫酸等の溶液による方法であれば
良い。A low melting point glass 5 for mounting the pellet is formed in a part of the cavity on the ceramic substrate 4 of the glass sealed package, which has a low melting point glass 3yk for sealing the pellet 2 which has been heated to about 2000 A in the sealing part. Figure 2 (A)) The pellet 2 is bonded under pressure to heated and molten soil, and then cooled and fixed (Figure 2 e)),) As an anodizing method, anodizing method is usually used for anodizing aluminum. Any method using a solution of phosphoric acid, ciulic acid, chromic acid, sulfuric acid, etc. may be used.
以上の様に本発明によるペレットの搭１１２方法を用い
れば、裏面金属層表面上に充分厚い酸化＋＋：ｑ ：・
ηが形成されているのでガラスとの閂れ具合は良くペレ
ットが破壊を起こ］７たりするＩ７ ｊは全＜ ７’ｒ
＜ ：よる。As described above, if the pellet tower 112 method according to the present invention is used, a sufficiently thick oxidation ++:q:・
Since η is formed, the bolting condition with the glass is good and the pellet is broken]7.
<: Depends.
本実施例では、陽極酸化可能な金属としてアルミニウム
をあげたが、この他にタンタル、チタンタングステン、
スズ等の金属でもかまわない１゜In this example, aluminum is used as a metal that can be anodized, but other metals include tantalum, titanium tungsten,
Metal such as tin is also acceptable 1°
第１図は、従来のベレットマウント方法を示す図である
。
第２図は、本発明の実施例に、１：るペレット７・クン
ト方法を示す図である。
同、図において、１・・・・・・アルミニウム膜、２・
・・・・・ペレット、３・・・・・・封止用の低融点ガ
ラス、４・・・・・・セラミック基板、５゛・・・・・
・ベレット搭載用の低融点ガラス、６・・・・・・フル
ミニウノ・の「、”ｊ Ｉｉｕ ｆ１Ｐ化１「Ｓである
Ｏ
代理人 弁理士 内 原 皆FIG. 1 is a diagram showing a conventional bullet mounting method. FIG. 2 is a diagram illustrating a pellet 7-Kundt method according to an embodiment of the present invention. In the same figure, 1...aluminum film, 2...
... Pellet, 3 ... Low melting point glass for sealing, 4 ... Ceramic substrate, 5゛ ...
・Low melting point glass for mounting a bullet, 6...Fulmini Uno's ``,''j Iiu f1P conversion 1''S O Agent Patent attorney Minami Uchihara
Claims (1)
に低融点ガラス膜を形成し、半導体素子の裏面に１り極
酸化可能な金ハｊ換を設は再に該金属膜の表面を１〜り
極酸化による酸化１１（へを形成した半導体素子を、該
低融点ガラスを溶融し、搭載固着する事を特徴とする半
導体素子の搭載方法。A low melting point glass film is formed on the semiconductor element mounting surface of the package on which the semiconductor element is mounted, and a gold oxide film capable of polar oxidation is provided on the back side of the semiconductor element. A method for mounting a semiconductor device, characterized in that a semiconductor device having an oxidized layer (11) formed thereon by polar oxidation is mounted and fixed by melting the low melting point glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11314583A JPS604229A (en) | 1983-06-23 | 1983-06-23 | Mounting method of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11314583A JPS604229A (en) | 1983-06-23 | 1983-06-23 | Mounting method of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS604229A true JPS604229A (en) | 1985-01-10 |
Family
ID=14604707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11314583A Pending JPS604229A (en) | 1983-06-23 | 1983-06-23 | Mounting method of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604229A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01272268A (en) * | 1988-04-25 | 1989-10-31 | Hitachi Ltd | Video signal processing circuit capable of enlarging display |
| WO2008153245A2 (en) * | 2007-06-11 | 2008-12-18 | Wavenics, Inc. | Semiconductor package module using anodized oxide layer and manufacturing method thereof |
-
1983
- 1983-06-23 JP JP11314583A patent/JPS604229A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01272268A (en) * | 1988-04-25 | 1989-10-31 | Hitachi Ltd | Video signal processing circuit capable of enlarging display |
| WO2008153245A2 (en) * | 2007-06-11 | 2008-12-18 | Wavenics, Inc. | Semiconductor package module using anodized oxide layer and manufacturing method thereof |
| WO2008153245A3 (en) * | 2007-06-11 | 2009-09-03 | Wavenics, Inc. | Semiconductor package module using anodized oxide layer and manufacturing method thereof |
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