JPS6039167A - Method for regenerating chemical copper plating solution - Google Patents

Method for regenerating chemical copper plating solution

Info

Publication number
JPS6039167A
JPS6039167A JP14593483A JP14593483A JPS6039167A JP S6039167 A JPS6039167 A JP S6039167A JP 14593483 A JP14593483 A JP 14593483A JP 14593483 A JP14593483 A JP 14593483A JP S6039167 A JPS6039167 A JP S6039167A
Authority
JP
Japan
Prior art keywords
chelating agent
plating solution
copper
plating
agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14593483A
Other languages
Japanese (ja)
Inventor
Masao Konno
今野 正男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14593483A priority Critical patent/JPS6039167A/en
Publication of JPS6039167A publication Critical patent/JPS6039167A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To recover and reuse a chelating agent by adjusting a deteriorated plating soln. to a specified pH or below to deposit a chelating agent, adjusting the deposited chelating agent to a specified pH or below, and carrying out deposition and purification. CONSTITUTION:A deteriorated chemical copper plating soln. contg. Cu ions, a Cu ion chelating agent, a Cu ion reducing agent and an alkali metallic hydroxide as a pH adjusting agent is adjusted to <=4pH by adding sulfuric acid or hydrochloric acid to deposit the chelating agent, and the agent is precipitated and separated. The separated chelating agent is adjusted to <=4pH by adding sulfuric acid or hydrochloric acid to prepare a mixed aqueous soln. contg. a deposit of the chelating agent. A soln. contg. no deposit is taken selectively and continuously out of the mixed aqueous soln., and it is passed through an electrodialytic vessel and returned to the mixed aqueous soln. Thus, the chelating agent is recovered, purified, and is reused.

Description

【発明の詳細な説明】 本発明は化学銅めっき液の再生方法に関し、とくに使用
済みの劣化した化学銅めっき液からキレート剤を精製回
収する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for regenerating a chemical copper plating solution, and more particularly to a method for purifying and recovering a chelating agent from a used and degraded chemical copper plating solution.

ガラス・エポキシ樹脂等の電気絶縁基板の表面に電気伝
導性を付与する手段として化学銅めっき等が広く電子工
業に利用されている。化学銅めっきにはエチレンジアミ
ン四酢酸のすトリウム塩。
Chemical copper plating and the like are widely used in the electronic industry as a means of imparting electrical conductivity to the surface of electrically insulating substrates such as glass and epoxy resin. Sodium salt of ethylenediaminetetraacetic acid for chemical copper plating.

ロッセル塩等の銅イオンのキレート剤、硫酸銅。Copper ion chelating agents such as Rossell's salt, copper sulfate.

塩化銅等の銅化合物およびホルムアルデヒド、パラホル
ムアルデヒド等の還元剤を含むアルカリ性の水溶液の化
学銅めっき液が用いられている。
A chemical copper plating solution that is an alkaline aqueous solution containing a copper compound such as copper chloride and a reducing agent such as formaldehyde or paraformaldehyde is used.

かかる化学銅めっき液を継続使用することによって、め
っき液中の主要成分が消費される。
Continuous use of such a chemical copper plating solution consumes the main components in the plating solution.

その結果化学銅めっきの反応によって消費し、不足する
めっき液中の銅イオンの最適濃度を維持するため銅イオ
ンを補給する。この場合、補給する銅イオンは銅化合物
の水溶液として補給される。
As a result, copper ions are consumed by the reaction of chemical copper plating, and copper ions are replenished to maintain the optimum concentration of copper ions in the plating solution. In this case, the copper ions to be replenished are supplied as an aqueous solution of a copper compound.

従って銅化合物の補給がくり返されると、銅イオンの対
陰イオンが、めっき液中に蓄積される。
Therefore, when the copper compound is repeatedly replenished, the counter anion of the copper ion is accumulated in the plating solution.

この銅化合物としては、硫酸銅、塩化銅が用いられるの
で硫酸イオンまたは塩素イオンが蓄積する。
Since copper sulfate or copper chloride is used as the copper compound, sulfate ions or chloride ions accumulate.

一方、銅イオンの還元剤としてはホルムアルデヒド、パ
ラアルデヒドが用いられるが、還元剤はめっき液中の酸
化反応の結果、ギ酸に変化する。
On the other hand, formaldehyde or paraaldehyde is used as a reducing agent for copper ions, but the reducing agent changes to formic acid as a result of an oxidation reaction in the plating solution.

この還元剤のギ酸変化もめっき液の連続使用に伴って銅
イオンの還元剤の補給によって蓄積される。
This formic acid change in the reducing agent is also accumulated due to the replenishment of the copper ion reducing agent as the plating solution is continuously used.

さらに一般的に化学銅めっき液はアルカリ性溶液である
ため、空気中の炭酸ガスを吸収して炭酸イオン全めっき
液中に蓄積する。それらの蓄積イオンは、めっき液のイ
オン強度を増大し、2価の銅イオンを捕捉するので、め
っき液の安定性全損い、めっき液を分解し、めっきされ
た銅皮膜の機械的性質全低下させる。従って上記陰イオ
ンが蓄積するとめっき液の一部または全部を新しいめっ
き液と交換し、その古いめっき液を廃棄していた。
Furthermore, since chemical copper plating solutions are generally alkaline solutions, they absorb carbon dioxide gas in the air and accumulate carbonate ions in the entire plating solution. These accumulated ions increase the ionic strength of the plating solution and trap divalent copper ions, causing a total loss of stability of the plating solution, decomposing the plating solution, and impairing the mechanical properties of the plated copper film. lower. Therefore, when the anions accumulate, part or all of the plating solution is replaced with a new one, and the old plating solution is discarded.

このため、めっきに用いる薬品のコスト及び劣化した液
処理のコストが極めて高くなる欠点があった。さらにコ
ストの内訳を詳述すると新しくめっき液を建浴し、補給
時に必要な薬品のうちキレート剤の占める費用が一般的
に割高である。またキレート剤が含有した劣化液全一般
の中和法で処理することはほとんど不可能なため焼却処
分を行なわざるを得なかった。このためキレート剤ヲ1
包収する従来方法としては、まず劣化しためっき液中の
金属銅を電解処理で回収し1次にこのめっき液を硫酸等
の酸でP)l値を下げ、キレート剤を析出させ分離回収
する方法があった。しかしこの方法では、めっき液中に
含まれている金属や、その他の不純物の大部分を除去す
ることはできないため回収したキレート剤を再利用する
ことはほとんどできなかった。
For this reason, there is a drawback that the cost of chemicals used for plating and the cost of treating degraded liquid are extremely high. Furthermore, looking at the breakdown of costs in detail, the cost of the chelating agent is generally relatively high among the chemicals required to prepare and replenish a new plating solution. Furthermore, since it is almost impossible to treat all of the degraded liquid contained in the chelating agent using the general neutralization method, it has been necessary to incinerate it. For this reason, chelating agent 1
The conventional method of encapsulation is to first recover the metallic copper in the degraded plating solution through electrolytic treatment, then use an acid such as sulfuric acid to lower the P value of the plating solution, precipitate a chelating agent, and separate and recover it. There was a way. However, with this method, most of the metals and other impurities contained in the plating solution cannot be removed, so it has been almost impossible to reuse the recovered chelating agent.

本発明の目的はかかる従来の化学銅めっき液の再生方法
キレート剤の回収方法の欠点を解消したを提供するもの
である。
An object of the present invention is to provide a method that overcomes the drawbacks of the conventional methods for regenerating chemical copper plating solutions and recovering chelating agents.

不発明によれば主として銅イオン、銅イオンのキレート
剤、銅イオンの還元剤、PH調整剤としてのアルカリ金
属の水酸化物全含有する化学銅めっきにおいて、劣化し
ためっき液に、硫酸もしくは塩酸全添加しP)T値ヲ4
.0以下に調整し7キレート剤を析出させ沈殿分離する
工程と、分離したキレート剤に再び硫酸、もしくは塩酸
を添加し、PH値ヲ4.0以下に調整しキレート剤の析
出物を含む混合水溶液にする工程と、この混合水溶液か
らキレート剤の析出物を除く溶液全選択的に連続して取
出し電気透析槽を通過させ、再び混合水溶液に戻す工程
とからな一部、キレート剤の析出物から鉄その他の金属
イオン並びに硫酸イオン、塩素イオン及びその他の陰イ
オンを除去してキレート剤を回収精製する工程とからな
る化学銅めっき液の再生方法が得られる。
According to the invention, in chemical copper plating that mainly contains copper ions, copper ion chelating agents, copper ion reducing agents, and alkali metal hydroxides as pH adjusters, sulfuric acid or hydrochloric acid is added to the deteriorated plating solution. Added P) T value wo 4
.. A step of precipitating and separating the chelating agent by adjusting the pH value to 0 or less, and adding sulfuric acid or hydrochloric acid again to the separated chelating agent to adjust the pH value to 4.0 or less to produce a mixed aqueous solution containing the chelating agent precipitate. and a step of selectively and continuously taking out all of the solution to remove the chelating agent precipitates from this mixed aqueous solution, passing it through an electrodialysis tank, and returning it to the mixed aqueous solution. A method for regenerating a chemical copper plating solution is obtained, which comprises a step of recovering and purifying a chelating agent by removing iron and other metal ions, sulfate ions, chloride ions, and other anions.

以下、不発明を実施例により説明する。Hereinafter, the invention will be explained with reference to examples.

実施例に先立って、実施例に用いた試験方法につき述べ
る。
Prior to the examples, the test methods used in the examples will be described.

銅めっき被着試料として厚さ1mmx巾100mmx長
さ15Qmmのステンレス板を用い、あらかじめ塩化錫
(II)の混合塩の酸性水溶液で活性化処理し、厚さ約
30μmに表面全1シ学銅めっきを施した後。
A stainless steel plate with a thickness of 1 mm x width of 100 mm x length of 15 Q mm was used as a copper plating sample. It was activated in advance with an acidic aqueous solution of a mixed salt of tin(II) chloride, and the entire surface was coated with copper to a thickness of approximately 30 μm. After applying.

銅めっき皮膜を剥離して5mmX100mmの面積を 
5 − 有する大きさに切断して、引張り試験用の試料とし、引
張、り試験機で銅めっき被膜の抗張力全測定した。
Peel off the copper plating film to create an area of 5mm x 100mm.
The sample was cut into a size of 5-2 to prepare a sample for a tensile test, and the tensile strength of the copper plating film was completely measured using a tensile tester.

化学銅めっき液上成分の濃度は、めっき工程中に自動的
に検出し、主成分の不足量を自動的に補給するめっき液
自動管理装置(図示省略)t−用いて、−足のめっき液
濃度に管理した。めっき液の安定性については、肉眼的
にめっき面が茶温色を呈することが観察された時点をめ
っき液の分解時点と判定した・ 次に上述の試験法に準拠した不発明実施例を表および図
面により詳述する。
The concentration of the components in the chemical copper plating solution is automatically detected during the plating process, and using a plating solution automatic management device (not shown) that automatically replenishes the missing amount of the main component, The concentration was controlled. Regarding the stability of the plating solution, the time when the plated surface was visually observed to exhibit a brownish color was determined to be the point at which the plating solution decomposed. and details with drawings.

第 1 表 第1表は不発明に用いためっき液の標準組成で容量は2
01!である。 このめっき液全すンプノI41とする
。このめっき液でステンレス板に厚さ30μmのめっき
層を設ける工程金弟1の工程とする。
Table 1 Table 1 shows the standard composition of the plating solution used in the invention, and the volume is 2.
01! It is. This plating solution was designated as I41. Step 1 is a step of forming a 30 μm thick plating layer on a stainless steel plate using this plating solution.

次にこのめっき液に先ず金属イオンの不純物として鉄イ
オンとして3ppm単位の硫酸鉄(pe804゜782
0)’i加え1次にニッケルイオンとして20+)I)
m単位の硫酸ニッケル(Ni804・7H20)f加え
た。
Next, 3 ppm of iron sulfate (pe804°782
0)'i plus 20+)I) as a primary nickel ion
m units of nickel sulfate (Ni804.7H20) were added.

次に同じように陰イオンの不純物として500 ppm
単位の塩素イオンとして塩[’(r加え1次に弗素イオ
ンとして、sooppm単位の弗化水素酸ヲ加えた。こ
の既知濃度の不純物を含むめっき液をサンプルNa2と
する。このサンプル陽2の104’分解し、そのめっき
液から従来方法でキレート剤を回収し再び回収したキレ
ート剤を用いて建浴しためっき液をサンプル陽3とする
。このサンプル隘3のめっき液中に含まれた不純物の種
類と濃度とを分析する測定をした・ このサンプルNa3のめつぎ液でステンレス板に厚さ3
0μmのめっき層を設ける工程を第2の工 7− 程とする。
Next, in the same way, 500 ppm as anion impurities.
Salt ['(r) was added as a unit of chlorine ion, and hydrofluoric acid was added as a fluorine ion in units of sooppm.The plating solution containing this known concentration of impurities was designated as sample Na2.This sample Na2-104 Sample No. 3 is a plating solution prepared by recovering the chelating agent from the plating solution using the conventional method and using the recovered chelating agent again. Measurements were taken to analyze the type and concentration.
The step of providing a 0 μm plating layer is the second step.

次にサンプル陽3のめっき液に前述と同様に同種で、か
つ同量の不純物全添加する工程と、その液から従来方法
によりキレート剤の回収を行い。
Next, the same type and amount of impurities were added to the plating solution of Sample No. 3 in the same manner as described above, and the chelating agent was recovered from the solution using a conventional method.

その回収したキレ−1・剤を用いてめっき成金建浴した
めっき液をサンプル−4とし、さらにその操作音くり返
したサンプルを隘5のめっき液とし。
The plating solution used in the plating bath using the recovered Clean-1 agent was designated Sample 4, and the sample obtained by repeating the operation sound was designated as the plating solution No. 5.

不純物の種類と濃度とを分析する測定をした。これらサ
ンプルNa4.Na5 のめっき液から各々ステンレス
板に厚さ30μmのめっき層を設ける工程金順次第3の
工程、第4の工程とした。
Measurements were taken to analyze the type and concentration of impurities. These samples Na4. A process of forming a 30 μm thick plating layer on each stainless steel plate using a Na5 plating solution The third step and the fourth step were performed depending on the order of the metals.

上述の各めっき液サンプル陽1.Na3.隘4.隘5と
対応する各不純物の種類と濃度の変化を第1図に示す。
Each of the above plating solution samples 1. Na3. 4. FIG. 1 shows the types and concentration changes of each impurity corresponding to the number 5.

さらに各第1〜第4の各工程でめっきされた抗張力の変
化とめっき液の安定性を各々$2図及び第2表に示す。
Furthermore, the changes in tensile strength and stability of the plating solution plated in each of the first to fourth steps are shown in Figure 2 and Table 2, respectively.

WJz表 次にサンプルNa2の残存めっき液に従来法で行ったと
同様に同種で、かつ同量の不純物全添加し。
WJz table Next, all of the same types and amounts of impurities were added to the remaining plating solution of sample Na2 as in the conventional method.

本発明方法によるキレート剤の回収を行い、再びめっき
液の建浴に用いステンレス板に厚さ30μmのめっき層
を設ける工程ヲ<り返した。この時の各工程におけるめ
っき液サンプル)h3’、 4’ 、 5’と対応する
各不純物の種類と濃度の変化を第3図に示す、さらに各
第2/ 、 3/ 、 4/の各工程でめっきされた抗
張力の変化とめっき液の安定性を各々第4図及び第3表
に示す。
The chelating agent was recovered by the method of the present invention and used again to prepare a plating solution, and the process of forming a 30 μm thick plating layer on a stainless steel plate was repeated. Figure 3 shows the changes in the type and concentration of each impurity corresponding to the plating solution sample in each step) h3', 4', and 5', and further in each of the steps 2/, 3/, and 4/. The changes in tensile strength and stability of the plating solution are shown in Figure 4 and Table 3, respectively.

第3表 上述のように、従来方法でキレート剤を回収し再び回収
したキレート剤を用いて建浴しためっき液は第1図でボ
すようにめっきする工程の回数が増えるごとに、不純物
の含有量が増加しめっき液翫1では鉄イオンはQ、5p
pm以下、ニッケルイオ 9 − ンはo、sppm以下、塩素イオンは1101)p以下
フッ素イオンは5ppm 以下であったのがめつき液N
15では鉄イオン濃度は3.71)I)m、ニッケルイ
オン濃度は6.8ppmm塩素イオン濃度は290pp
mmフッ素イオン濃度は270m)I)mとなった。こ
のため上述しためっき液−5からめっきt行っためっき
被着物の拡張力は第2図で示されているように拡張力は
著しく低下した。具体的には不純物を添加する以前のめ
っき液N111からめっきされためっき被着物の拡張力
値は60.0kg/mm2であるのに対しめっき液隘5
からめっきされためっき被着物の拡張力値は19.0 
k g/mm 2となったーさらにめっき液の安定性に
ついて述べると第2表で示されているようにめっき液N
a4においてめっき液はやや分解現象が生じ、めっき液
陽5において社めっき液は完全に分解してしまった。
As shown in Table 3 above, the plating solution prepared by recovering the chelating agent using the conventional method and using the recovered chelating agent increases the amount of impurities as the number of plating processes increases, as shown in Figure 1. In plating solution 1, iron ions are Q, 5p as the content increases.
Plating solution N had nickel ions below 9-pm, nickel ions below o, sppm, chlorine ions below 1101) p, and fluorine ions below 5 ppm.
In No. 15, the iron ion concentration is 3.71)I)m, the nickel ion concentration is 6.8 ppmm, and the chloride ion concentration is 290 ppm.
The mm fluorine ion concentration was 270 m)I)m. Therefore, as shown in FIG. 2, the expansion force of the plated adherend plated using the above-mentioned plating solution-5 was significantly reduced. Specifically, the expansion force value of the plating deposit plated with plating solution N111 before adding impurities was 60.0 kg/mm2, whereas
The dilatation force value of the plated adherend plated from scratch is 19.0
kg/mm2.Moreover, regarding the stability of the plating solution, as shown in Table 2, the plating solution N
In plating solution a4, the plating solution slightly decomposed, and in plating solution positive 5, the company's plating solution was completely decomposed.

次に不発明の方法でキレート剤を回収し再び回収したキ
レート剤を用いて建浴しためっき液は第3図で示すよう
にめっきする工程の回数が増えても不純物の含有量はほ
とんど増加せずめっき液Na5’10− においては鉄イオン濃度は(,1,51)T)m以下、
ニッケルイオン濃度はQ、5ppm以下、塩素イオン濃
度は10pp以下、弗素イオン濃度は5ppm以下であ
った。又上述しためっき液陽5からめっきを行っためっ
き被着物の拡張力は第3図で示されているように拡張力
はめっき液隘1からめっきされためっき被着物の拡張力
と 4翳してもほとんど低下は見られなかった。具体的
VCはめっき液慮5′からめっきされためっき被着物の
拡張力値は61.0kg/mmであった。
Next, the chelating agent is recovered using an uninvented method, and the plating solution prepared using the recovered chelating agent has almost no increase in impurity content even if the number of plating steps increases, as shown in Figure 3. In the plating solution Na5'10-, the iron ion concentration is less than (,1,51)T)m,
The nickel ion concentration was Q, 5 ppm or less, the chlorine ion concentration was 10 ppm or less, and the fluorine ion concentration was 5 ppm or less. Furthermore, the expansion force of the plated deposit plated from the plating solution 5 mentioned above is as shown in FIG. Almost no decline was observed. Specifically, the expansion force value of the plated adherend plated from the plating solution 5' was 61.0 kg/mm.

以上1本発明によれば、劣化した化学銅めっき液からキ
レート剤を回収し再び回収したキレート剤を化学銅めっ
き液の建浴時に再使用する化学銅めっき液の町生方法に
は従来不純物の蓄積により化学銅めっき液の不安定等を
生じせしめめっき被着物の拡張力の低下をもたらすため
キレート剤の回収再利用は非常に困難であったが本発明
により。
According to the present invention, the chelating agent is recovered from the deteriorated chemical copper plating solution and the recovered chelating agent is reused when preparing the chemical copper plating solution. It has been very difficult to recover and reuse the chelating agent because the accumulation causes instability of the chemical copper plating solution and reduces the expansion power of the plating deposit, but the present invention can do so.

容易にキレート剤を回収し再利用することが出来その経
済的効果は大きい。
The chelating agent can be easily recovered and reused, which has great economic effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来法でキレート剤を回収し、再び回収したキ
レート剤を用いて建浴しためっき液中に蓄積された不純
物の含有量である。第2図は前述しためっき液からめっ
きされためっき被着物の拡張力の変化を下したものであ
る。第3図は不発明法でキレート剤を回収し、再ひ回収
したA゛レート剤用いて建浴しためっき液中に蓄積され
た不純物の含有量である。第4図はM述のめっき液から
めっきされためっき被着物の拡張力の変化を示したもの
である。 ′−11、 代理人 弁理士 内 原 1 ゝ・ 日・、16.・ −i孟]層7丁再6「 0 o o () θ ( 匂 ■ ) づ へ ζ (zw” g)/ u 了;
FIG. 1 shows the content of impurities accumulated in a plating solution prepared by recovering a chelating agent using the conventional method and preparing a bath using the recovered chelating agent. FIG. 2 shows the change in expansion force of the plated adherend plated with the above-mentioned plating solution. FIG. 3 shows the content of impurities accumulated in a plating solution prepared by recovering a chelating agent using the uninvented method and using the recovered A chelating agent. FIG. 4 shows the change in expansion force of the plated adherend plated using the plating solution described in M. '-11, Agent Patent Attorney Uchihara 1 ゝ・日・, 16.・ -i Meng] Layer 7 Ding Re 6 ``0 o o () θ (scent ■) zu to ζ (zw” g)/ u completed;

Claims (1)

【特許請求の範囲】[Claims] 主として銅イオン、銅イオンのキレート剤、銅イオンの
還元剤、PH調整剤としてのアルカリ金属の水酸化物を
含有する化学銅めっきにおいて、劣化しためっき液に硫
酸もしくは塩酸を添加し、PH値を4.0以下に調整し
、キレート剤を析出させ沈殿分離する工程と、分離した
キレート剤に再び硫酸、もしくは塩酸を添加しP−H値
を4.0以下に調整しキレート剤の析出物を含む混合水
溶液にする工程と、前記混合水溶液からキレート剤の析
出物を除く溶液を選択的に連続して取出し、電気透析槽
を通過させ、再び前記混合水溶液に戻す工程とからなる
化学銅めっき液の再生方法。
In chemical copper plating, which mainly contains copper ions, copper ion chelating agents, copper ion reducing agents, and alkali metal hydroxides as pH adjusters, sulfuric acid or hydrochloric acid is added to the deteriorated plating solution to reduce the pH value. A step of adjusting the P-H value to 4.0 or less, precipitating the chelating agent and separating it by precipitation, and adding sulfuric acid or hydrochloric acid again to the separated chelating agent to adjust the P-H value to 4.0 or less to remove the chelating agent precipitate. A chemical copper plating solution comprising the steps of: forming a mixed aqueous solution containing the chelating agent; and selectively and continuously extracting a solution from which chelating agent precipitates are removed from the mixed aqueous solution, passing it through an electrodialysis tank, and returning it to the mixed aqueous solution again. How to play.
JP14593483A 1983-08-10 1983-08-10 Method for regenerating chemical copper plating solution Pending JPS6039167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14593483A JPS6039167A (en) 1983-08-10 1983-08-10 Method for regenerating chemical copper plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14593483A JPS6039167A (en) 1983-08-10 1983-08-10 Method for regenerating chemical copper plating solution

Publications (1)

Publication Number Publication Date
JPS6039167A true JPS6039167A (en) 1985-02-28

Family

ID=15396450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14593483A Pending JPS6039167A (en) 1983-08-10 1983-08-10 Method for regenerating chemical copper plating solution

Country Status (1)

Country Link
JP (1) JPS6039167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414173U (en) * 1990-05-18 1992-02-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0414173U (en) * 1990-05-18 1992-02-05

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