JPS6038818A - Electron beam exposing device - Google Patents

Abstract

PURPOSE:To enable to detect the a foreign substance present on the material to be processed by a method wherein the secondary electron generating from the material to be processed when an electron beam is made to irradiate is picked up. CONSTITUTION:The electron beam 2 made to irradiate from an electron gun 1 is focussed by an electron lens 3 and reaches the material to be processed. Said electron beam is deflected by a deflection magnetic pole 4, and the desired part of the material to be processed 5 is exposed. At this time, as a foreign substance such as dust and the like is present on the material to be processed and the electron beam resist located on the material to be processed 5 is flat ordinarily when an electron beam is made to irradiate on the foreign substance, the signal of the secondary electron to be generated is changed, and the presence of dust whereon the electron beam 2 is made to irradiate can be recognized by detecting the foreign substance by the secondary electron detecting machine 6.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus that performs exposure processing on an object to be processed using an electron beam.

In recent years, electron beam exposure apparatuses have come to be used in 111i as semiconductor integrated circuit patterns become denser, finer, and have higher topography.

A pattern forming method using an electron beam exposure apparatus generally involves irradiating an electron beam onto a desired portion of a fcIb and amplified beam-sensitive resist formed on an object to be processed, and then developing Pl [desired portion This is done by removing the .

By the way, when irradiating an electron beam, if there is foreign matter such as dust on the electron beam sensitive resist on the object to be processed, one minute of the electron beam irradiation area will be removed in the subsequent sand imaging process. The irradiated electrons are absorbed by the foreign matter, and the portions that should originally be irradiated with the cylindrical beam are not irradiated, causing an undesired pattern, so-called dots, to occur in the subsequent development process, resulting in defects. In addition, in the case of a so-called negative resist where the part irradiated with the electron beam remains in the later development process, conversely to the above, the part where foreign matter was present will not be irradiated with the electron beam and the resist will be removed in the later development process. This causes so-called pinholes to occur and cause defects.

These defects can be caused by, for example, when the multiplex beam beam assembly 4 is used to manufacture a photomask used in the manufacturing process of semiconductor integrated circuits, and the photomask after electron beam formation is not developed, baked, etched, or resisted. It is discovered during the inspection process after a number of processes such as peeling are completed.

Furthermore, when electron beam exposure equipment is used directly in the manufacture of semiconductor integrated circuits, or as a so-called surface structuring equipment that directly exposes resist on a silica area with electron beams, it is difficult to detect the above defects. If there are a large number of foreign substances involved in beam irradiation, the number of good semiconductor integrated circuit chips that can be finally obtained from one wafer, ie, the yield, will be significantly reduced.

In order to generally manufacture semiconductor integrated circuits, one wafer is subjected to resist coating, exposure, development, baking, and post-processing (e.g. etching, ion implantation, diffusion, etc.) several times to several times. Since this process requires a large amount of man-hours and time, the low yield as described above will result in a major problem in production. In particular, the above-mentioned surface structuring equipment is often used for the purpose of shortening the construction period, and the fact that it is not possible to judge the quality of the semiconductor integrated circuit until the final manufacturing process is completed is a major disadvantage in achieving that purpose. Ta.

The purpose of the present invention is to recognize the number of defects caused by foreign matter such as dust at the end of electron beam exposure, and to determine whether to proceed to the V process, thereby shortening the construction period and eliminating unnecessary man-hours. A sub-beam exposure device is provided.

That is, the present invention provides 10. an electron beam illumination device for controlling an electron beam generated from an electron gun and irradiating it onto a workpiece to perform exposure processing; This relates to electron beam exposure 8+f which has a function of detecting foreign matter present on the object to be processed by capturing secondary electrons generated from the object to be processed when the secondary beam I (i) is irradiated.

An embodiment of the present invention will be explained in detail below with reference to the drawings. FIG. 1 shows an embodiment of the present invention, in which an fc% beam 2 generated from an electron gun 1 is converged by a frost single lens 3 and reaches an object 5 to be processed. By deflection magnetic pole 4! The electron beam 11 is deflected, and a desired portion b of the object 5 to be processed is exposed. At this time, there may be foreign matter such as dust on the object 5, and there may be stones, etc.
When the child beam 2 is irradiated, the electron beam resist on the object to be traced and processed 5 is flat, so the generated secondary electron signal is different, and by detecting it with the secondary W3 child detector 6, %; V! The presence of dust related to electron beam irradiation! I can understand. Confirmed t1tc The number of foreign objects such as dust is an arbitrary number (
Semiconductor collection 95th j'+? It is known at the end of the exposure that the desired yield cannot be obtained if the amount exceeds (depending on the chip size of i, the required yield, etc.), and the quality of the rudder processing body 5 is judged here. By proceeding to the subsequent process, a large amount of man-hours and time can be reduced.

As described above, by using the secondary beam exposure apparatus according to the present invention, it is possible to complete 111 secondary beam exposures and reduce the number of sheets and construction period, depending on the quality of the processed body.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of electron beam exposure. Next, leave 0 mars, and place ■... as a child gun, 2...
...electron beam, 3... as child lens, 4...
...Ka1 direction [it, 5... object to be processed, 6.
...This is similar to secondary electron detection.

Claims (1)

[Claims] In electron beam exposure equipment that controls the electron beam generated from an electron gun and irradiates it onto the object to be processed, it is possible to expose the object to the object by capturing the secondary electrons generated by the object during electron beam irradiation. fclh: Child beam exposure device.