JPS6035593A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6035593A JPS6035593A JP59133164A JP13316484A JPS6035593A JP S6035593 A JPS6035593 A JP S6035593A JP 59133164 A JP59133164 A JP 59133164A JP 13316484 A JP13316484 A JP 13316484A JP S6035593 A JPS6035593 A JP S6035593A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- receiving element
- optical axis
- reflection
- monitor output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、半導体し・−ザ、受光素子等を備えた半導体
装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to improvement of a semiconductor device including a semiconductor laser, a light receiving element, and the like.
第1図(a)は従来の半導体装置を示す断面略図で、4
blはそれを上側からみたものである。すなわち、図に
示すように、半導体レーザチ、プl、受光素子2.サブ
マウント3.ヒートシンク4.ステム又はパッケージ5
.キヤツプ6、窓ガラス7より成る半導体装置において
は、レーザのモニタ出力光を受光素子2で受けていた。FIG. 1(a) is a schematic cross-sectional view showing a conventional semiconductor device.
bl is the view from above. That is, as shown in the figure, a semiconductor laser chip, a photodetector element 2. Submount 3. Heat sink 4. Stem or package 5
.. In the semiconductor device consisting of the cap 6 and the window glass 7, the light receiving element 2 receives the monitor output light of the laser.
このように半導体レーザの出力レベルの制御をする為に
モニタ出方光を受光する場合、そこからの反射がレーザ
素子の発振部に戻り、外部共振器を形成することになる
。そのため、温度変化、機械的寸法変動があると出力ビ
ームの遠視野像が乱れたり、発振縦単−モード、横基本
モードが一部くずれたりすることがあった。これは、特
にビデオデスク等への応用上、雑音を発生したりするの
で大きな問題となっていた。When the monitor output light is received in order to control the output level of the semiconductor laser in this way, the reflection from the monitor light returns to the oscillation part of the laser element and forms an external resonator. Therefore, if there is a temperature change or a mechanical dimensional change, the far-field pattern of the output beam may be disturbed, or the oscillation longitudinal single mode and transverse fundamental mode may be partially distorted. This has been a big problem, especially when applied to video desks and the like, as it generates noise.
本発明は、上記の点に着目してなされたものであり、半
導体レーザのモニタ出力光の反射にょるレーザ出力の変
動、外部光学共振器の形成などを防止するようにした半
導体装置を提供するものである。The present invention has been made in view of the above points, and provides a semiconductor device that prevents variations in laser output due to reflection of monitor output light from a semiconductor laser, and the formation of external optical resonators. It is something.
上記目的を達成するために、本発明では、半導体レーザ
のモニタ出方光の主光軸に対して、受光素子の表面を、
少なくとも、主光軸を含まぬよう偏心させて設けると共
に、主光軸を含む他の非受光部分には、カーボンブラッ
ク等の反射防止光吸収体を設ける如く構成したものであ
る。In order to achieve the above object, in the present invention, the surface of the light receiving element is
At least, it is provided eccentrically so as not to include the main optical axis, and an antireflection light absorber such as carbon black is provided in other non-light receiving portions including the main optical axis.
以下、本発明を実施例を参照して説明する。 Hereinafter, the present invention will be explained with reference to Examples.
上述したように、本発明は、受光素子の表面からの反射
光がレーザのモニタ出力部に戻らないよう、レーザ出力
ビームの一部分のみを受光するよう、ビームの主光軸に
対して偏心させて受光素子を置くものである。As described above, in the present invention, the laser output beam is eccentrically centered with respect to the main optical axis so that only a portion of the laser output beam is received so that the reflected light from the surface of the light receiving element does not return to the monitor output section of the laser. This is where the light receiving element is placed.
第2図は、本発明の一実施例を示す図である。FIG. 2 is a diagram showing an embodiment of the present invention.
図に示すように、半導体レーザ素子l、受光素子2、サ
ブマウント3.ヒートシンク4.ステム5を配置する例
において、レーザビームモニタ出力の主光軸OO′とし
、受光素子2の表面の点Pと0で決まる光軸をOPとす
るとき、00′とOFのなす角の最小値が2.5°以上
となるように受光素子2の取りつけ位置を、ステム5の
表面上で、偏位させるものである。これは、ステム5の
表面とレーザチップlの表面のなす直角度の精度、さら
には受光素子2の表面とステム5の表面のソルダーによ
る取りつけの平行度の精度などが一般的技術レベルにお
いて約±2°程度であるため。As shown in the figure, a semiconductor laser element 1, a light receiving element 2, a submount 3. Heat sink 4. In the example of arranging the stem 5, when the main optical axis of the laser beam monitor output is OO' and the optical axis determined by the points P and 0 on the surface of the light receiving element 2 is OP, the minimum value of the angle between 00' and OF is The mounting position of the light receiving element 2 is deviated on the surface of the stem 5 so that the angle is 2.5° or more. This is due to the accuracy of the perpendicularity between the surface of the stem 5 and the surface of the laser chip l, and the accuracy of the parallelism of the solder attachment between the surface of the light receiving element 2 and the surface of the stem 5, etc. at a general technical level. Because it is about 2°.
00′とOPのなす角度を2.5°以上になるように0
′とPの距離をあけることにより、万一受光素子表面の
角度が、レーザチップよりに傾斜していても、モニター
出力光の反射がレーザ素子発振出力端面に戻らないよう
にしたものである。Adjust the angle between 00' and OP to be 2.5° or more.
By leaving a distance between ' and P, even if the angle of the surface of the light-receiving element is inclined more than the laser chip, the reflection of the monitor output light is prevented from returning to the oscillation output end face of the laser element.
さらに、ステム面からの乱反射を防止するように高光吸
収体8としてカーボンブラック等をおくか、カーボンを
含む黒色塗料を塗布しておく。その範囲は、第2図に示
すようにステム面のみでもよいが、受光素子2の非受光
部分(周辺の電極部や、接合のない部分)の一部、詔よ
び放熱体4の一部表面をカバーする如く塗布してもよい
。Further, in order to prevent diffused reflection from the stem surface, carbon black or the like is provided as a high light absorber 8, or a black paint containing carbon is applied. The area may include only the stem surface as shown in FIG. 2, but it may also include a part of the non-light receiving part of the light receiving element 2 (peripheral electrode part or a part without bonding), a part of the eaves, and a part of the surface of the heat sink 4. It may be applied to cover.
第3図は、本発明の他の実施例を示す図である。FIG. 3 is a diagram showing another embodiment of the present invention.
レーザモニタ出力の、不使用部分のビームによる反射を
防ぐために、図に示すように、サブマウント3の上に、
高光吸収体9としてカーボンブラ。To prevent the laser monitor output from being reflected by the unused portion of the beam, as shown in the figure, on the submount 3,
Carbon bra as high light absorber 9.
りを塗布し、その高さと幅により、モニタ出力ビームの
遮へい部分を、少なくとも、モニタ出力ビーム主軸を中
心とする約2.5°の部分、立体角で50の部分をカバ
ーするように構成するものである。The shielding area of the monitor output beam is configured to cover at least an area of about 2.5° centered on the main axis of the monitor output beam, or an area of 50 solid angles, depending on its height and width. It is something.
モニタ出力ビームの主軸部分がカットされるために、受
光素子への入力光電力は減少するが、ステム5の表面に
設けられた受光素子2と、レーザ素子lのモニタ出力主
光軸のなす直角度のずれが±2°以内であれば、受光素
子表面からのレーザ素子への反射戻り成分はない。なお
、図中、4はヒートシンクを示す。Since the main axis of the monitor output beam is cut, the optical power input to the photodetector decreases, but the alignment between the photodetector 2 provided on the surface of the stem 5 and the monitor output main optical axis of the laser element l If the angle deviation is within ±2°, there is no component reflected back to the laser element from the surface of the light receiving element. In addition, in the figure, 4 indicates a heat sink.
また、モニタ出力主光軸附近からの乱反射による反射戻
り成分に対して、この光吸収体9が遮断する効果がある
。なお、上記実施例で述べた高光吸収体きしては、カー
ボンチップ、カーボンブラック、黒色塗料等によるのが
適当である。Further, the light absorber 9 has the effect of blocking reflected return components due to diffused reflection from the vicinity of the monitor output main optical axis. Note that the high light absorber described in the above embodiments is suitably made of carbon chips, carbon black, black paint, or the like.
第1図(alは、従来の半導体装置を示す断面略図。
(blはそれを上側からみた図であり、第2図および第
3図は、それぞれ本発明の一実施例を示す図である。
l・・・半導体レーザ素子、2・・・受光素子、3・サ
ブマウント、4・・・ヒートシンク、5・・・ステム、
6・・・ステム又はパッケージ、7・・・窓ガラス、8
19・・・光吸収体。
代理人弁理士 高 橋 明 夫
第1図
(良)
(b)
第 Z 図FIG. 1 (Al is a schematic cross-sectional view showing a conventional semiconductor device. (BL is a view of the same from above, and FIGS. 2 and 3 are views each showing an embodiment of the present invention. l... Semiconductor laser element, 2... Light receiving element, 3... Submount, 4... Heat sink, 5... Stem,
6... Stem or package, 7... Window glass, 8
19...Light absorber. Representative Patent Attorney Akio Takahashi Figure 1 (Good) (b) Figure Z
Claims (1)
いて、前記レーザのモニタ出力光の主光軸に対して、前
記受光素子の表面を、少なくとも前記主軸を含まぬよう
に偏心させて設けると共に、前記主光軸を含む他の非受
光部分には、反射防止用光吸収体を設ける如く構成した
ことを特徴とする半導体装置。1. In a semiconductor device including a semiconductor laser and a light receiving element, the surface of the light receiving element is provided eccentrically with respect to the main optical axis of the monitor output light of the laser so as not to include at least the main axis; 1. A semiconductor device characterized in that an antireflection light absorber is provided in other non-light receiving portions including the main optical axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59133164A JPS6035593A (en) | 1984-06-29 | 1984-06-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59133164A JPS6035593A (en) | 1984-06-29 | 1984-06-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6035593A true JPS6035593A (en) | 1985-02-23 |
Family
ID=15098181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59133164A Pending JPS6035593A (en) | 1984-06-29 | 1984-06-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6035593A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675597A (en) * | 1994-11-16 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
WO2004008548A1 (en) * | 2002-07-11 | 2004-01-22 | Hamamatsu Photonics K.K. | Semiconductor light source device |
JP2006170729A (en) * | 2004-12-14 | 2006-06-29 | Hamamatsu Photonics Kk | Light emitting device tester and photo detector for light emitting device tester |
-
1984
- 1984-06-29 JP JP59133164A patent/JPS6035593A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675597A (en) * | 1994-11-16 | 1997-10-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
WO2004008548A1 (en) * | 2002-07-11 | 2004-01-22 | Hamamatsu Photonics K.K. | Semiconductor light source device |
JP2006170729A (en) * | 2004-12-14 | 2006-06-29 | Hamamatsu Photonics Kk | Light emitting device tester and photo detector for light emitting device tester |
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