JPS6035243U - Semiconductor laser astigmatism measurement device - Google Patents

Semiconductor laser astigmatism measurement device

Info

Publication number
JPS6035243U
JPS6035243U JP1983128015U JP12801583U JPS6035243U JP S6035243 U JPS6035243 U JP S6035243U JP 1983128015 U JP1983128015 U JP 1983128015U JP 12801583 U JP12801583 U JP 12801583U JP S6035243 U JPS6035243 U JP S6035243U
Authority
JP
Japan
Prior art keywords
semiconductor laser
imaging
measurement device
optical system
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983128015U
Other languages
Japanese (ja)
Inventor
太田　義徳
正隆 伊藤
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1983128015U priority Critical patent/JPS6035243U/en
Publication of JPS6035243U publication Critical patent/JPS6035243U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の第１の実施例で、１は半導体レーザ、
２は結像レンズ、３は波長フィルタ、４はＨｅ−Ｎｅレ
ーザビーム、５はナイフェツジ、６は光検出器である。 第２図は本考案の第２の実施例で２ａはコリメートレン
ズ、２ｂは集束レンズである。FIG. 1 shows a first embodiment of the present invention, in which 1 is a semiconductor laser;
2 is an imaging lens, 3 is a wavelength filter, 4 is a He-Ne laser beam, 5 is a knife, and 6 is a photodetector. FIG. 2 shows a second embodiment of the present invention, in which 2a is a collimating lens and 2b is a focusing lens.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被験物である半導体レーザの発光輝点を結像する結像光
学系と該結像光学系によって結像された結像輝点をその
光軸に垂直な面内で光軸をよぎるように設置せられたナ
イフェツジと、光軸上前記ナイフェツジの背後に配置し
た光検出器と、前記半導体レーザの結像輝点近傍に光ビ
ームが集束するように配置した非点隔差の無い光源とを
備えていることを特徴とする半導体レーザの非点隔差測
定装置。An imaging optical system that images the luminescent spot of a semiconductor laser, which is the test object, and an imaging optical system that is installed so that the imaging luminescent spot imaged by the imaging optical system crosses the optical axis in a plane perpendicular to the optical axis. a light detector arranged on the optical axis behind the knife; and a light source without astigmatism arranged so that the light beam is focused near the imaging bright spot of the semiconductor laser. A semiconductor laser astigmatism measuring device characterized by:
JP1983128015U 1983-08-19 1983-08-19 Semiconductor laser astigmatism measurement device Pending JPS6035243U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983128015U JPS6035243U (en) 1983-08-19 1983-08-19 Semiconductor laser astigmatism measurement device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983128015U JPS6035243U (en) 1983-08-19 1983-08-19 Semiconductor laser astigmatism measurement device

Publications (1)

Publication Number Publication Date
JPS6035243U true JPS6035243U (en) 1985-03-11

Family

ID=30290549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983128015U Pending JPS6035243U (en) 1983-08-19 1983-08-19 Semiconductor laser astigmatism measurement device

Country Status (1)

Country Link
JP (1) JPS6035243U (en)

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