JPS6032361B2 - How to use current passing type high frequency signal attenuator - Google Patents

How to use current passing type high frequency signal attenuator

Info

Publication number
JPS6032361B2
JPS6032361B2 JP52002023A JP202377A JPS6032361B2 JP S6032361 B2 JPS6032361 B2 JP S6032361B2 JP 52002023 A JP52002023 A JP 52002023A JP 202377 A JP202377 A JP 202377A JP S6032361 B2 JPS6032361 B2 JP S6032361B2
Authority
JP
Japan
Prior art keywords
high frequency
frequency signal
current passing
frequency
type high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52002023A
Other languages
Japanese (ja)
Other versions
JPS5292401A (en
Inventor
孝 端山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maspro Denkoh Corp
Original Assignee
Maspro Denkoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maspro Denkoh Corp filed Critical Maspro Denkoh Corp
Priority to JP52002023A priority Critical patent/JPS6032361B2/en
Publication of JPS5292401A publication Critical patent/JPS5292401A/en
Publication of JPS6032361B2 publication Critical patent/JPS6032361B2/en
Expired legal-status Critical Current

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  • Noise Elimination (AREA)
  • Filters And Equalizers (AREA)
  • Attenuators (AREA)

Description

【発明の詳細な説明】 本発明は、高周波電圧を減衰させるための減衰器の使用
方方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of using an attenuator to attenuate high frequency voltages.

従来より、例えばテレビ信号(4加MHZ〜100瓜M
H2)回路(高周波信号の伝送線路とも呼ばれる)に介
設して用いられる電流通過形固定減衰器にあっては、高
周波電圧を衰させる回路の他に直流ないいま低周波分の
みを減衰させる事なく通過させるためのチョークコイル
を必要とする関係上、減衰器が大型になるばかりでなく
、減衰回路素子と上記チョークコイルとの間の高周波カ
ップリングを避けるためには、チョークコイルの取付位
置が制限されると言う欠点があった。
Conventionally, for example, television signals (4K MHZ to 100M
H2) A current-passing type fixed attenuator used in a circuit (also called a transmission line for high-frequency signals) has the ability to attenuate only the low-frequency component of direct current, in addition to the circuit that attenuates the high-frequency voltage. Not only does the attenuator become large because a choke coil is required to pass the choke coil, but the mounting position of the choke coil must be adjusted in order to avoid high-frequency coupling between the attenuation circuit element and the choke coil. It had the disadvantage of being limited.

また使用周波数の上昇につれてチョークコイル巻線間の
漂遊容量が原因となって実際の減衰量が、減衰回路の設
計値からずれると言う問題点もある。本発明は上記のよ
うな問題点の解決に役立たせることのできる減衰器の使
用方法を提供しようとするものである。
Another problem is that as the operating frequency increases, the actual amount of attenuation deviates from the design value of the attenuation circuit due to stray capacitance between the choke coil windings. The present invention aims to provide a method of using an attenuator that can help solve the above-mentioned problems.

以下本願実施例の構成を例図につき説明する。The configuration of the embodiment of the present application will be described below with reference to example diagrams.

第1図において、1は高周波抵抗器の全体、2は中空筒
状の強磁性体、4はその透孔3に挿通した導線である。
次に第2図に示す減衰器において、Zは上記高周波抵抗
器、R,,R2は通常の抵抗素子でこれらが減衰回路を
構成する。なおCは直流及び低周波遮断用のコンデンサ
ー、a.a′は入力端子、b,b′は出力端子である。
次に上記構成の作用につき説明する。
In FIG. 1, 1 is the entire high frequency resistor, 2 is a hollow cylindrical ferromagnetic material, and 4 is a conductive wire inserted through the through hole 3 thereof.
Next, in the attenuator shown in FIG. 2, Z is the above-mentioned high frequency resistor, R, , R2 are ordinary resistance elements, and these constitute an attenuation circuit. Note that C is a capacitor for DC and low frequency cutoff, a. a' is an input terminal, b and b' are output terminals.
Next, the operation of the above configuration will be explained.

まず直流ないいま低周波のみが入力端子a,a′に入っ
たぱあし・には、高周波抵抗器Zの強磁性体2の存在は
入出力端子間の回路に何ら影響せずその等価回路は第3
図のようになる。次に入力端子a,a′に高周波が重畳
して入ると、導線4と強磁性体2との間に電磁的な結合
が生じ、高周波抵抗器Zの両端から見るとインピーダン
スが生じる。このインピーダンスは、実験によればきわ
めて僅かなィンダクタンスを伴なう抵抗で、事実上は高
周波における純抵抗とみなされる。従って高周波成分に
対し減衰器の等価回路は第4図のようになり、チョーク
コイルを有しない減衰器と等価になる。ここで、上記イ
ンピーダンスが生じることは、次の様な理論式によって
理解される。
First of all, when only direct current or low frequency waves enter the input terminals a and a', the presence of the ferromagnetic material 2 of the high frequency resistor Z has no effect on the circuit between the input and output terminals, and the equivalent circuit is Third
It will look like the figure. Next, when a high frequency wave is superimposed and input to the input terminals a and a', electromagnetic coupling occurs between the conducting wire 4 and the ferromagnetic material 2, and impedance is generated when viewed from both ends of the high frequency resistor Z. According to experiments, this impedance is a resistance with extremely small inductance, and is effectively considered to be pure resistance at high frequencies. Therefore, the equivalent circuit of the attenuator for high frequency components is as shown in FIG. 4, which is equivalent to an attenuator without a choke coil. Here, the occurrence of the above impedance can be understood from the following theoretical formula.

まず第5図において中心導体に電流1を流したとき、強
磁性体内の中心導体から任意の距離rの点における磁界
日はH;; 従ってこの点における磁束密度Bは、山oを真空中にお
ける透磁率、山sをこの強磁性体の比透磁率として、B
=」OASH=ム毒若さ1 すると内半径r,、外半径r2、長さその強磁性体内を
通る全磁束数■は■=′〒28とdr =伯半券生Ldr −A雌1りn害 2汀 従ってT,一T2端子間のインピーダンスZはのを角周
波数としてZ小子 比透磁率r3 を 山Sニ山S一JArS と置けば Z小四だ−化並仇害 2m 純抵抗である美都とィンダクタンスである虚部とを分け
、またムo=4m×10‐7を代入すればZ=R+ふL
である故R:と。
First, in Fig. 5, when a current 1 is passed through the center conductor, the magnetic field at a point at an arbitrary distance r from the center conductor inside the ferromagnetic body is H; therefore, the magnetic flux density B at this point is Magnetic permeability, mountain s is the relative magnetic permeability of this ferromagnetic material, B
=''OASH=Mutonous Youth 1 Then, the inner radius r,, the outer radius r2, the length, and the total number of magnetic flux passing through the ferromagnetic body ■=' 〒28 and dr = Hakubanken student Ldr -A female 1ri Therefore, the impedance Z between the terminals T and T2 is the angular frequency, and if we set the relative magnetic permeability r3 as the mountain S, the mountain S1, the JArS, we get Z4, which is the pure resistance. If we separate a certain mito and the imaginary part, which is inductance, and substitute Muo=4m×10-7, we get Z=R+FL
The late R: and.

−世〃S叱仇羊2中 :く4中fそrrSとn害)X・『7……【・}Lこと
処′Sらn害2中 =(2夕一′Sそn害)X・〇−7……{21なおここ
でfは周波数を表わしwとはf:歩 の関係である。
-World〃S rebuke sheep 2 middle: ku4 middle fsorrS and n harm) X・〇-7...{21 Here, f represents the frequency, and w has a relationship of f: step.

強磁性体としては、損失が多いものすなわちねn6(損
失を示す)の大きいものを使用する。
As the ferromagnetic material, a material with a large loss, that is, a material with a large n6 (indicating loss) is used.

〇n6は柵=巻〉>1 であり一s″>>rs′となり、■式の虚数部は無視す
ることが出来る。
〇n6 is fence=volume〉>1 and 1s″>>rs′, and the imaginary part of the equation (①) can be ignored.

従って【1}式は高周波における純抵抗となり、第5図
に示す様な構造で磁性体内に導線を通すとT,一T2間
のインピーダンスは実部1で与えられ、これが高周波純
抵抗値を示す。第6図に一s′,ムs″の特性曲線を示
す。強磁性体の純抵抗としての使用可能領域は斜線には
さまれた部分である。そしてこの高周波抵抗値は、強磁
性体2の長さ、透孔3の径、導線4の太さ、導線を透孔
3の貫通させる回数により変化させる事ができる。次に
、上記高周波抵抗器の強磁性体における比透磁率ムsの
うちの損失項ムs″(比透磁率ムsは周知の如くまた前
にも示した如く複数形式により無損失項As′と損失項
仏s″とによって表わされる)と、通過させるべき高周
波信号の角周波数のとの積の一例を示すと第7図のよう
になり、4仙川zから1000MHzの領域においてほ
ぼ一定の値となっている。
Therefore, formula [1} is pure resistance at high frequencies, and when a conductor is passed through a magnetic body with the structure shown in Figure 5, the impedance between T and T2 is given by the real part 1, which indicates the high frequency pure resistance value. . Figure 6 shows the characteristic curves of 1s' and 1s''.The usable area of the ferromagnetic material as a pure resistance is the area between the diagonal lines.The high-frequency resistance value of the ferromagnetic material 2 It can be changed by the length of the through hole 3, the diameter of the through hole 3, the thickness of the conducting wire 4, and the number of times the conducting wire is passed through the through hole 3.Next, the relative permeability of the ferromagnetic material of the high frequency resistor s can be changed. The loss term ``s'' (relative magnetic permeability ``s'' is expressed in multiple forms by the lossless term ``As'' and the loss term ``s'', as is well known and as shown earlier) and the high-frequency signal to be passed. An example of the product of the angular frequency of is shown in FIG. 7, and the value is almost constant in the region from 4 Sengawa z to 1000 MHz.

尚これは強磁性体の一例として日本フェライト製のOL
−3なる品番の強磁性体(寸法r,=0.5風、r2=
1.7う 燭、夕7側)について実測して得た値である
。また上記高周波抵抗器1を第2図に示される減衰回路
の第1の抵抗素子Zとして用いた減衰器の減衰特性の実
測値を第8図に実線で示す。図から明らかな如く、4肌
町zから100瓜MHzの広い周波数帯域において各周
波数ともほぼ一定の減衰値を示している。以上のように
この発明にあっては、入力端子a,a′と出力端子b,
b′とを第1及至第3の抵抗素子Z,R,,R2を介し
て接続しているから、線路を一方向へ向けて通過しよう
としている高周波信号が上記入力端子a,a′から該減
衰器に入釆するときには、その高周波信号を該減衰器内
を通して出力端子b,b′から線路に送り出すことので
きる特長がある。
This is OL made by Nippon Ferrite as an example of ferromagnetic material.
-3 ferromagnetic material (dimensions r, = 0.5 wind, r2 =
This is the value obtained by actually measuring 1.7 candles, evening 7 side). Furthermore, actual measured values of the attenuation characteristics of an attenuator using the high frequency resistor 1 as the first resistance element Z of the attenuation circuit shown in FIG. 2 are shown by solid lines in FIG. As is clear from the figure, each frequency exhibits a substantially constant attenuation value in a wide frequency band from 4 MHz to 100 MHz. As described above, in this invention, the input terminals a, a' and the output terminals b,
b' are connected through the first to third resistive elements Z, R, , R2, the high frequency signal that is about to pass through the line in one direction will be routed from the input terminals a, a'. When connected to an attenuator, the high frequency signal has the advantage of passing through the attenuator and being sent out to the line from the output terminals b, b'.

しかもこの場合、上記入力端子と出力端子との間におい
ては上記第1乃至第3の抵抗素子Z,R,,R2によっ
て減衰回路を構成しているから、上記線路を一方向に向
けて通過している高周波信号をその線路中におけるこの
減衰器の介設箇所で所定量の減衰をさせることができ、
上記高周波信号を次段へ向け所定のレベルで送出できる
効果がある。
Moreover, in this case, since an attenuation circuit is formed between the input terminal and the output terminal by the first to third resistance elements Z, R, and R2, the line passes through the line in one direction. It is possible to attenuate a high frequency signal by a predetermined amount at the location where this attenuator is installed in the line,
This has the effect that the high frequency signal can be sent to the next stage at a predetermined level.

その上そのように線路を一方向に向け通過している信号
を該減衰器の入力端子と出力端子との間で減衰させる場
合、本発明にあっては、強磁性体に透孔を穿設しこの透
孔に導線を挿通して構成した高周波抵抗器1を上記入出
力端子間に接続する第1の抵抗素子Zとして用い、しか
もそのような高周波抵抗器を用いた減衰器を上記高周波
抵抗器の強磁性体における比透磁率〃sのうちの損失仏
s″と、通過させるべき高周波信号の角周波数のとの積
が常に一定となる高周波の周波数領域で用いるから、前
記第8図においても示されたように上記高周波の周波数
領域において各周波数とも一定の減衰量で減衰させるこ
とができる特長がある。このことは、従来のチョークコ
イルを用いた減衰器にあっては、第8図に破線で示され
るように一部の周波数城においてその減衰特性に山が生
じる為、そこらの周波数の高周波信号が異常に弱められ
てしまう欠点があったのに対し、本発明の場合にあって
は上記領域において高い周波数域の高周波信号も、中位
の周波数域の高周波信号も、低い周波数城の高周波信号
もどれも皆均一なしベルで出力できる効果がある。更に
また本発明においては、上記構成の高周波抵抗器をその
導線4の一端(例えば端子T,)を入力端子aに、他端
(例えば端子T2)を出力端子bに夫々接続して使用す
るものであるから、上記線路に上記のような高周波信号
の外に直流ないいま低周波数をも重畳させ、これらを線
路に沿って送る場合、上記の如く線路の一方向に向けて
高周波信号を通過させかつその通過の過程でその高周波
信号を減衰させるものであっても、それと同方向(ある
いは逆方向)に送る直流ないしは低周波は、これを殆ん
ど減衰させることなく通過させることができ、上記直流
ないいま低周波(一般に電源として用いられる)の電圧
に何ら悪影響を及ぼすことなくそれらを伝送できる効果
がある。
Furthermore, in order to attenuate a signal passing through the line in one direction between the input terminal and the output terminal of the attenuator, in the present invention, a through hole is formed in the ferromagnetic material. A high frequency resistor 1 constructed by inserting a conductive wire through the through hole is used as the first resistance element Z connected between the input and output terminals, and an attenuator using such a high frequency resistor is used as the high frequency resistor. Since it is used in the high frequency frequency region where the product of the loss value s'' of the relative magnetic permeability s in the ferromagnetic material of the container and the angular frequency of the high frequency signal to be passed is always constant, in the above-mentioned FIG. As shown in Figure 8, each frequency can be attenuated with a constant amount in the high frequency range. As shown by the broken line in , there is a peak in the attenuation characteristic at some frequency ranges, which has the disadvantage that high-frequency signals at those frequencies are abnormally weakened, but in the case of the present invention, In the above region, the high frequency signal in the high frequency range, the high frequency signal in the medium frequency range, and the high frequency signal in the low frequency range can all be output with uniformity.Furthermore, in the present invention, the above configuration A high-frequency resistor is used by connecting one end (for example, terminal T,) of the conductor 4 to input terminal a, and the other end (for example, terminal T2) to output terminal b. When direct current or low frequency signals are superimposed on top of such high frequency signals and sent along a line, the high frequency signal is passed in one direction of the line as described above, and in the process of passing, the high frequency signal is Even if the DC or low frequency waves sent in the same direction (or opposite direction) are attenuated, it can be passed through with almost no attenuation. It has the effect of being able to transmit these voltages without any adverse effect on the voltage used in the device.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本願の実施例を示すもので、第1図は高周波抵抗
器の斜視図、第2図は減衰器の電気結線図、第3図は第
2図の減衰器の低周波及び直流分に対する等価回路、第
4図に高周波に対する第3図と同様な図、第5図は高周
波抵抗器の斜視図、第6図は比透磁率と周波数との関係
を示す図、第7図は損失項と角周波数の積の一例を示す
グラフ、第8図は減衰特性の一例を示すグラフ。 2・・…・強磁性体、3・・・・・・・・・透孔、4・
・・・・・導線、1,Z・・・・・・高周波抵抗器。 第1図 第2図 第3図 第4図 第5図 第6図 第7図 第8図
The drawings show an embodiment of the present application. Fig. 1 is a perspective view of a high frequency resistor, Fig. 2 is an electrical wiring diagram of an attenuator, and Fig. 3 is a diagram of the attenuator shown in Fig. 2 for low frequency and DC components. Equivalent circuit, Figure 4 is a diagram similar to Figure 3 for high frequencies, Figure 5 is a perspective view of a high frequency resistor, Figure 6 is a diagram showing the relationship between relative magnetic permeability and frequency, and Figure 7 is a diagram showing the loss term. FIG. 8 is a graph showing an example of the product of angular frequency and angular frequency, and FIG. 8 is a graph showing an example of attenuation characteristics. 2...Ferromagnetic material, 3...Through hole, 4...
... Conductor, 1, Z ... High frequency resistor. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8

Claims (1)

【特許請求の範囲】[Claims] 1 強磁性体に透孔を穿設し、この透孔に導線を挿通し
て構成した高周波抵抗器を、電流通過型高周波信号減衰
器における後述の第1の抵抗素子として用い、しかも上
記電流通過型高周波信号減衰器は、一対の入力端子と一
対の出力端子とを有し、更に上記一対の入力端子のうち
の一方の端子と一対の出力端子のうちの一方の端子との
間には減衰回路構成用の第1の抵抗素子を接続してある
と共に、それらの端子間には更に夫々減衰回路構成用の
第2の抵抗素子と第3抵抗素子との直列回路を接続して
あり、更に上記一対の入力端子のうちの他方の端子と一
対の出力端子のうちの他方の端子とは相互に直接に接続
してあると共に、その接続点と上記第2及び第3の抵抗
素子相互の接続点との間には直流及び低周波遮断用のコ
ンデンサーを接続して構成してあり、しかも上記高周波
抵抗器は上記導線の一端を上記一対の入力端子のうちの
上記の一方の端子に、他端を上記一対の出力端子のうち
の上記の一方の端子に夫々接続して用い、更に上記電流
通過型高周波信号減衰器は、直流ないしは低周波と高周
波信号とが重畳した状態で通過する線路に介設して用い
、しかも上記電流通過型高周波信号減衰器は、上記高周
波抵抗器の強磁性体における比透磁率μ_3のうちの損
失項μ_5″と、通過させるべき高周波信号の角周波数
ωとの積が常に一定となる高周波の周波数領域で用いる
ことを特徴とする電流通過型高周波信号減衰器の使用方
法。
1. A high-frequency resistor constructed by drilling a through hole in a ferromagnetic material and inserting a conductive wire into the through hole is used as the first resistance element described later in a current passing type high frequency signal attenuator, and the above-mentioned current passing The type high frequency signal attenuator has a pair of input terminals and a pair of output terminals, and further has an attenuation between one terminal of the pair of input terminals and one terminal of the pair of output terminals. A first resistance element for a circuit configuration is connected, and a series circuit of a second resistance element and a third resistance element for an attenuation circuit configuration is further connected between these terminals, respectively. The other terminal of the pair of input terminals and the other terminal of the pair of output terminals are directly connected to each other, and the connection point thereof is connected to the second and third resistance elements. A DC and low frequency blocking capacitor is connected between the high frequency resistor and the high frequency resistor. The current passing type high frequency signal attenuator is used by connecting its ends to the one terminal of the pair of output terminals, and the current passing type high frequency signal attenuator is connected to a line through which direct current or low frequency and high frequency signals are superimposed. The current passing type high-frequency signal attenuator is used as an intervening device, and the current passing type high-frequency signal attenuator has a loss term μ_5″ of the relative magnetic permeability μ_3 of the ferromagnetic material of the high-frequency resistor and the angular frequency ω of the high-frequency signal to be passed. A method of using a current passing type high frequency signal attenuator, characterized in that it is used in a high frequency frequency region where the product is always constant.
JP52002023A 1977-01-12 1977-01-12 How to use current passing type high frequency signal attenuator Expired JPS6032361B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52002023A JPS6032361B2 (en) 1977-01-12 1977-01-12 How to use current passing type high frequency signal attenuator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52002023A JPS6032361B2 (en) 1977-01-12 1977-01-12 How to use current passing type high frequency signal attenuator

Publications (2)

Publication Number Publication Date
JPS5292401A JPS5292401A (en) 1977-08-03
JPS6032361B2 true JPS6032361B2 (en) 1985-07-27

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JP (1) JPS6032361B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224520U (en) * 1985-07-26 1987-02-14
JP5660258B2 (en) 2012-08-24 2015-01-28 株式会社村田製作所 High frequency device and directional coupler

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877390A (en) * 1972-01-22 1973-10-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877390A (en) * 1972-01-22 1973-10-17

Also Published As

Publication number Publication date
JPS5292401A (en) 1977-08-03

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