JPS6028148B2 - photodiode - Google Patents
photodiodeInfo
- Publication number
- JPS6028148B2 JPS6028148B2 JP51007976A JP797676A JPS6028148B2 JP S6028148 B2 JPS6028148 B2 JP S6028148B2 JP 51007976 A JP51007976 A JP 51007976A JP 797676 A JP797676 A JP 797676A JP S6028148 B2 JPS6028148 B2 JP S6028148B2
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- filter
- coating layer
- layer
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Light Receiving Elements (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
【発明の詳細な説明】
本発明はフオトダィオード‘こ関し、フオトダィオード
‘こおけるフィル夕の改良された構造を提供することを
目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to photodiodes, and an object thereof is to provide an improved structure of a filter in a photodiode.
フオトダイオードの一例のカメラ用フオトダイオ−ド‘
こシリコンのものが多く用いられている。Camera photodiode, an example of a photodiode
This silicon material is often used.
第１図ａに示すシリコンフオトダィオードは、外囲器１
の本体ｌａの受光面にガラスフィルタｌｂを備え、フオ
トダィオードベレツト２を外囲器内に配設する。そして
べレットの電極端子を外囲器の電極導出１」−ドｌｃ，
ｌｃ′に夫々接続してなる。上記ガラスフィル夕はフオ
トダィオードベレットの分光感度特性９０００Ａにピー
クをもつなだらかな曲線であるところから、これを人間
の視感度（５６００Ａにピークをもつ）に合わせるため
７０００Ａ以上の長波長分をカットするものを適用する
。かかるガラスフィル夕には干渉型と吸収型とがある。
前者はガラスの片面に誘電体を通常１３層程度蒸着する
必要があり、かっこの膜厚の制御が非常に繁雑で、製造
も難しく高価である。後者はガラスにリン系物質を添加
してなるが、この添加物のために吸湿しやすくガラスフ
ィル夕に白濁を生じ、光の透過率が低下する。これによ
りカメラにおける露出の過多、過少がおきる。さらに分
光感度が変化し、人間の視感度と少しずれる事によって
写真が赤味を帯びたり、青味を帯びたりする場合もある
。上記に対し、通常ガラスフィルタｌｂの両面に、第１
図ｂに示す如くフツ化マグネシウム３（ＭｇＦ２）等を
被着することによって吸湿を防止してたいるが充分でな
く、白濁を生じ支障を来たすことが多い。The silicon photodiode shown in FIG.
A glass filter lb is provided on the light-receiving surface of the main body la, and a photodiode bellet 2 is disposed within the envelope. Then, connect the electrode terminal of the pellet to the electrode lead 1 of the envelope,
lc' respectively. Since the above glass filter has a gentle curve with the spectral sensitivity characteristic of the photodiode pellet having a peak at 9000A, in order to match this to the human visual sensitivity (which has a peak at 5600A), the long wavelength of 7000A or more is Apply what you want to cut. There are two types of such glass filters: interference type and absorption type.
The former requires usually about 13 layers of dielectric material to be deposited on one side of the glass, and the control of the film thickness of the parentheses is extremely complicated, making manufacturing difficult and expensive. The latter is made by adding a phosphorous substance to glass, but this additive easily absorbs moisture, causing cloudiness in the glass filter and reducing light transmittance. This results in over- or under-exposure in the camera. Furthermore, the spectral sensitivity changes and may deviate slightly from the human visual sensitivity, causing the photograph to appear reddish or bluish. In contrast to the above, there is usually a first
As shown in FIG. b, moisture absorption is usually prevented by coating magnesium fluoride 3 (MgF2), etc., but this is not sufficient and often causes problems by causing cloudiness.
本発明は上記従来のフオトダィオ−ド‘こおける欠点を
除去するためになされたもので、改良された構造のフィ
ル夕を備えたフオトダィオードを提供する。The present invention has been made to eliminate the above-mentioned drawbacks of conventional photodiodes, and provides a photodiode with an improved filter structure.
本発明のフオトダィオードは、受光部にフィル夕を有す
るフオトダィオー日こして、フィル夕の両王面に気相成
長により形成された被覆層を有し、この被覆層がＳｉ０
２−リン添加Ｓｉ０２−Ｓｉ０２の積層構造からなるこ
とを特徴とするものである。The photodiode of the present invention has a photodiode having a filter in the light receiving part, and has a coating layer formed by vapor phase growth on both sides of the filter, and this coating layer is made of Si0
It is characterized by having a laminated structure of 2-phosphorus-doped Si02-Si02.
以下、本発明の一実施例のフオトダィオード‘こかかる
一例のカメラ用フオトダィオード‘こつき詳細に説明す
る。第２図に本発明のかかるフオトダィオードのフィル
夕の一部を断面図で示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS A photodiode according to an embodiment of the present invention will be described in detail below. FIG. 2 shows a cross-sectional view of a portion of the filter of a photodiode according to the present invention.
即ち平板状のガラスフイルタｌｂの両主面にＳｉ０２（
二酸化ケイ素）の被覆層１２を設ける。上記Ｓｉ０２層
は一般に用いられる気相成長の手段、即ち、シラン（Ｓ
ｉ比）を酸素雰囲気中で加熱分解することにより次の化
学式の如く形成される。Ｓｉ比十２仏→Ｓｉ０２十２日
２０
そして層厚は多くの実験に基づき０．３〜２．０〃が好
適する。That is, Si02 (
A coating layer 12 of silicon dioxide) is provided. The above Si02 layer was grown by a commonly used vapor phase growth method, namely silane (S
i ratio) is thermally decomposed in an oxygen atmosphere to form the following chemical formula. Si ratio 12 Buddhas → Si02 12 days 20 Based on many experiments, the layer thickness is preferably 0.3 to 2.0.
この限界は防湿能力の発生する下限が０．３ムであり、
光の透過性を維持できる限界が２ムであることに基づく
。次に第２図における被覆層１２は、これを拡大して示
す第３図からわかるように、リンを添加したＳｉ０２層
１ ２ａを挟んで二つのＳｉ０２層１ ２ｂ，１２ｂ′
で形成された積層機構となっている。This limit is the lower limit at which the moisture-proof ability occurs, and is 0.3 μm.
This is based on the fact that the limit at which light transparency can be maintained is 2 μm. Next, as can be seen from FIG. 3, which shows an enlarged view of the coating layer 12 in FIG.
It is a laminated mechanism formed by.
このリン添力ロＳｉ０２層１２ａは、前述のシランの加
熱分解による気相成長工程の途中でその雰囲気中にリン
を添加するという簡単な操作で形成される。このような
被覆層１２はガラスフィル夕の湿気による自濁を防止す
るとともに、それ自身熱的影響によるクラックが防止さ
れ、常時フィル夕の白濁防止効果を失うことがないなど
、種々の効果がある。This phosphorus-added Si02 layer 12a is formed by a simple operation of adding phosphorus to the atmosphere during the vapor phase growth step by thermal decomposition of silane described above. Such a coating layer 12 not only prevents the glass filter from becoming cloudy due to moisture, but also prevents cracking due to thermal effects, and has various effects such as not losing the filter's cloudiness prevention effect at all times. .
第１図ａはフオトダィオードの断面図を示し、図ｂはフ
ィルタ部の一部の断面図、第２図は本発明の一実施例の
フオトダィオードのフィルタ部の一部の断面図、第３図
は第２図の被覆層部を拡大して示す断面図である。
なお、図中同一符号は同一または相当部分を夫々示すも
のとする。１・・・・・・フィル夕、１２・・・・・・
被覆層、１２ａ・・・・・・リン添加Ｓｉ０２層、１２
ｂ……Ｓｉ０２層。
第１図第２図
第３図FIG. 1a shows a cross-sectional view of a photodiode, FIG. b shows a cross-sectional view of a part of the filter part, FIG. FIG. 3 is an enlarged cross-sectional view of the coating layer portion of FIG. 2; Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively. 1...Fill evening, 12...
Covering layer, 12a... Phosphorus-added Si02 layer, 12
b...Si02 layer. Figure 1 Figure 2 Figure 3
Claims (1)
て、フイルタの両主面に気相成長により形成された被覆
層を有し、この被覆層がＳｉＯ＿２−リン添加ＳｉＯ＿
２−ＳｉＯ＿２の積層構造からなることを特徴とするフ
オトダイオード。1 A photodiode having a filter in the light receiving part has a coating layer formed by vapor phase growth on both main surfaces of the filter, and this coating layer is made of SiO_2-phosphorus-doped SiO_
A photodiode characterized by having a laminated structure of 2-SiO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51007976A JPS6028148B2 (en) | 1976-01-29 | 1976-01-29 | photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51007976A JPS6028148B2 (en) | 1976-01-29 | 1976-01-29 | photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5291665A JPS5291665A (en) | 1977-08-02 |
| JPS6028148B2 true JPS6028148B2 (en) | 1985-07-03 |
Family
ID=11680475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51007976A Expired JPS6028148B2 (en) | 1976-01-29 | 1976-01-29 | photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6028148B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230448U (en) * | 1988-08-17 | 1990-02-27 | ||
| JPH0453397Y2 (en) * | 1985-10-21 | 1992-12-15 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61176502U (en) * | 1985-04-24 | 1986-11-04 | ||
| JPH0517891Y2 (en) * | 1986-12-27 | 1993-05-13 | ||
| JP2542003Y2 (en) * | 1988-11-21 | 1997-07-23 | 三菱電機株式会社 | Optical semiconductor device module |
| JPH07297493A (en) * | 1994-04-28 | 1995-11-10 | Hamamatsu Photonics Kk | Light-emitting device |
-
1976
- 1976-01-29 JP JP51007976A patent/JPS6028148B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453397Y2 (en) * | 1985-10-21 | 1992-12-15 | ||
| JPH0230448U (en) * | 1988-08-17 | 1990-02-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5291665A (en) | 1977-08-02 |
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