JPS60245780A - Coating solution for forming electrically conductive transparent film - Google Patents
Coating solution for forming electrically conductive transparent filmInfo
- Publication number
- JPS60245780A JPS60245780A JP10018584A JP10018584A JPS60245780A JP S60245780 A JPS60245780 A JP S60245780A JP 10018584 A JP10018584 A JP 10018584A JP 10018584 A JP10018584 A JP 10018584A JP S60245780 A JPS60245780 A JP S60245780A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- transparent conductive
- solvent
- conductive film
- boiling point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
「技術分野」
本発明は、カラス等の基板に塗布し焼成して透明導″１
１／ＩＩを形成する透明導電Ｈり形成用塗布液に関し、
特に基板にディッピング法やスピンナー法により塗布す
るのに適した透明導電膜形成用塗布液に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention is a transparent conductor made by coating a substrate such as glass and baking it.
Regarding the coating liquid for forming transparent conductive H layer forming 1/II,
In particular, the present invention relates to a coating liquid for forming a transparent conductive film suitable for coating on a substrate by a dipping method or a spinner method.
［従来技術およびその問題点」
カラス、セラミフクス等の基板−にに形成した酸化イン
ジウム、酸化スズ、酸化カドニウムなとからなる酸化物
被膜は透明で良好な導電性を示すことが知られており、
液晶表示素子、半導体素子などの電極として使用された
り、窓カラスなとの結露防止用電極として使用されてい
る。[Prior art and its problems] It is known that oxide films made of indium oxide, tin oxide, and cadmium oxide formed on substrates such as glass and ceramic fuchs are transparent and exhibit good conductivity.
It is used as an electrode for liquid crystal display elements, semiconductor elements, etc., and as an electrode for preventing dew condensation on window glasses.
このような透明導電ＩＱの形成方法としては、真空蒸着
法、スクリーン印刷法なとが知られている。しかし、真
空基若法では特殊な設備を要し、パンチ式なので量産に
適さない欠点がある。スクリーン印刷法ではかかる問題
がなく、印刷焼成によりエンチングを施すことなくＩ」
内形状のものを１１）ることかできるか、比校的広い面
積の部分に印刷塗！１１するには作業性が悪い欠点かあ
る。As methods for forming such a transparent conductive IQ, vacuum evaporation method and screen printing method are known. However, the vacuum base method requires special equipment and is a punch type, which has disadvantages that make it unsuitable for mass production. The screen printing method does not have this problem, and the printing process does not require enching.
11) Is it possible to print something with an internal shape on a relatively large area? 11 has the disadvantage of poor workability.
そこで、比鮫的広い面積を有する部分に作業性良く透明
導電膜を形成する手段としてディッピング法なとか考え
られる。この場合には、インジウムや醇化スズなどを含
む有機金属化合物と、有機バインダーと、低沸点溶媒と
からなる透明導電膜形成用塗布液がディンピング液とし
て使用される。Therefore, a dipping method may be considered as a means of forming a transparent conductive film on a portion having a relatively large area with good workability. In this case, a coating liquid for forming a transparent conductive film consisting of an organometallic compound containing indium, tin oxide, etc., an organic binder, and a low boiling point solvent is used as the dipping liquid.
かかるディンピング液においては、液の安定性かあるこ
と、基板に付着して均一な１１りを形成すること、か＠
要である。液の安定性について述べると、従来、インジ
ウムや醇化スズなどを含む有機金属化合物としては、例
えばＭ（ＯＲ）ｎ （Ｍは金属、（ＯＲ）ｎはアルコキ
シス０で示されるような加水分解性の化合物が使用され
ていた。しかし、これをディンピング液の成分とすると
、有機金属化合物が空気中の水分と反応して加水分解し
、金属水酸化物が粒子となって白濁現象が生しる。した
がつて、作業を例えば５０％以下の湿度条件で行なわな
ければならず、また、液の保管寿命か短い（０，５ケ月
程爪）という問題点があった。また、基板に付着して均
一な膜を形成するためには、適度な揮発性を有すること
、および、適度な粘性を有することか心霊である。揮発
性が少ないと例えばディ・ソピングして基板を引き」二
げたときに乾きが足りずｌり厚にむらが生しやすくなり
、揮発性が高すぎると塗布作業中に液が揮発してやはり
膜厚にむらか生しることになる。また、粘度が高すぎて
も付着力か強くなりすぎるので膜厚にむらが生しやすく
なり、粘度が低すぎる場合は伺着力が弱いため充分な膜
厚が得られない。In such a dipping liquid, it is important that the liquid has stability, that it adheres to the substrate, and that it forms a uniform dipping layer.
It is essential. Regarding the stability of the liquid, conventionally, organic metal compounds containing indium, tin chloride, etc. However, when this compound was used as a component of a dipping liquid, the organometallic compound reacted with moisture in the air and hydrolyzed, resulting in the metal hydroxide becoming particles and causing a cloudy phenomenon. Therefore, the work had to be carried out in a humidity condition of, for example, 50% or less, and there was also the problem that the storage life of the liquid was short (about 0.5 months). In order to form a uniform film, it is important to have appropriate volatility and appropriate viscosity.If the volatility is low, for example, the substrate may be pulled out by depressing. Sometimes, the drying time is insufficient and the thickness tends to be uneven, and if the volatility is too high, the liquid evaporates during the coating process, resulting in uneven film thickness.Also, the viscosity is too high. If the viscosity is too low, the adhesion will become too strong, resulting in uneven film thickness; if the viscosity is too low, the adhesion will be weak, making it impossible to obtain a sufficient film thickness.
「発明の目的」
本発明の１」的は、安定性、適度な揮発性および粘度を
有する、ティッピング法なとに適した透明４ｉ１ｉ Ｉ
Ｉり形成用塗布液を提供することにある。``Object of the Invention'' Object of the present invention is to obtain a transparent 4i1i I which has stability, appropriate volatility and viscosity and is suitable for the tipping method.
An object of the present invention is to provide a coating liquid for forming an I-layer.
［発明の構成」
本発明の透明導電膜形成用塗布液は、インジウムとスス
とを含む非加水分解性の有機金属化合物３〜８重量％、
有機バインダー１〜４千量％、矧１点１００’ｃ以上の
高沸点溶媒０．１〜５．０市屡％、残部か王としてｄ＋
点１００℃未満の低沸点溶媒からなっている。[Structure of the Invention] The coating solution for forming a transparent conductive film of the present invention contains 3 to 8% by weight of a non-hydrolyzable organometallic compound containing indium and soot;
1 to 4,000% organic binder, 0.1 to 5.0 mass% of high boiling point solvent of 1 point 100'C or more, balance d+ as king
It consists of a low boiling point solvent of less than 100°C.
インジウムとスズとを含む非加水分解性の有機金属化合
物としては、例えばトリスアセチルアセトナートインジ
ウム
セトナートジブチルススＳｎＢｕ２ （ａｃａｃ）２か
挙げられる。この場合、スズ成分は有機金属化合物中７
、５〜１５１１１７ｊ−％が適当である。有機金属化合
物の含有ｆｊｆは３〜８重ニー％とされ、３重量％未満
では導′屯性が充分に得られず、８重量％を超えると有
機金属化合物を溶媒に充分溶解させることかできなくな
る。Examples of the non-hydrolyzable organometallic compound containing indium and tin include trisacetylacetonate, indium cetonate, and dibutylsuspension SnBu2 (acac)2. In this case, the tin component is 7% in the organometallic compound.
, 5 to 151117j-% is suitable. The content fjf of the organometallic compound is 3 to 8% by weight; if it is less than 3% by weight, sufficient conductivity cannot be obtained, and if it exceeds 8% by weight, the organometallic compound cannot be sufficiently dissolved in the solvent. It disappears.
有機バインダーとしては、例えばニトロセルロース、エ
チルセルロース、ヘンシルセルロースなとのセルロース
化合物が使用できる。有機バインダーの含有１１は１〜
４重量％とされ、１重量％未満では液の基板への付着性
が充分に得られず、４気量％を超えると付着力が強くな
りすぎてＩり厚のむらが生しやすくなる。As the organic binder, cellulose compounds such as nitrocellulose, ethylcellulose, and Hensylcellulose can be used. The content of organic binder 11 is 1-
If the amount is less than 1% by weight, sufficient adhesion of the liquid to the substrate will not be obtained, and if it exceeds 4% by volume, the adhesion will be too strong and uneven thickness will likely occur.
高沸点溶媒としては、訓点１００°Ｃ以」−、好ましく
は沸点１５０〜２５０°Ｃのものが使用される。高沸点
溶媒は、透明導電膜形成用塗布液の揮発性をコントロー
ルするために添加されるもので、沸点１００°Ｃ未満で
は揮発性を効果的に調整しにくくなる。また、添加量は
０．１〜５．０重量％、好ましくは２〜３重量％であり
、添加ψが０．１重ｊ１％未満では揮発性を下げる効果
が少なく、５．０重量％を超えると揮発性が低くなりす
きて膜厚にむらが生しやすくなる。かかる高沸点溶媒と
しては、例えばペンシルアルコール、ジプロピレングリ
コールなとの高沸点アルコール類、ペンシルアセテート
、カルヒトールアセテートなとの高沸点エステル類、ブ
チルセロソルブなどの高沸点エーテル類等が使用できる
。これらの高沸点溶媒は２挿具」−用いてもよい。As the high boiling point solvent, one with a boiling point of 100°C or higher, preferably 150 to 250°C, is used. The high boiling point solvent is added to control the volatility of the coating solution for forming a transparent conductive film, and if the boiling point is less than 100°C, it becomes difficult to effectively adjust the volatility. Further, the amount added is 0.1 to 5.0% by weight, preferably 2 to 3% by weight, and if the addition ψ is less than 0.1% by weight, the effect of lowering volatility is small, so 5.0% by weight is less. If it exceeds the range, the volatility decreases and the film thickness tends to become uneven. As such a high boiling point solvent, for example, high boiling point alcohols such as pencil alcohol and dipropylene glycol, high boiling point esters such as pencil acetate and calhitol acetate, high boiling point ethers such as butyl cellosolve, etc. can be used. These high boiling point solvents may be used in combination.
低沸点溶媒としては、沸点１００°Ｃ未満、好ましくは
沸点５０°Ｃ以上かつ１００°Ｃ未満のものが使用され
る。沸点が５０°Ｃ未満では揮発が早すぎて１１り厚に
むらが生じやすく、＋ｏｏ’ｃ以」二では基板をディッ
ピングして引き上げたときに乾さか足りず、やはり１（
り厚にむらが生してしまう。また、低沸点溶媒の粘度は
５〜１０Ｑｃｐが好ましい。粘度が５ｃｐ未満では基板
への液の付着性が低下し、１（１’０ｃｌ）を超えると
液のイ４看性が強くなりすぎる傾向がある。かかる低沸
点溶媒としては、アルコール系、ケトン系、エステル系
、芳香族系などの種々の溶媒が使用できるが、例えばメ
チルエチルケトンなどが好適である。低佛点溶１）Ｘは
、有機金属化合物、有機バインターおよび低沸点溶媒を
除いた残りの主たる成分をなす。As the low boiling point solvent, one with a boiling point of less than 100°C, preferably a boiling point of 50°C or more and less than 100°C is used. If the boiling point is less than 50°C, it will evaporate too quickly and the thickness will be uneven.
This results in uneven thickness. Moreover, the viscosity of the low boiling point solvent is preferably 5 to 10 Qcp. When the viscosity is less than 5 cp, the adhesion of the liquid to the substrate decreases, and when it exceeds 1 (1'0 cl), the liquid tends to have too strong of an adhesive property. As such a low boiling point solvent, various solvents such as alcohol, ketone, ester, and aromatic solvents can be used, and for example, methyl ethyl ketone is preferable. Low-temperature solution 1) X constitutes the remaining main component excluding the organometallic compound, organic binder, and low-boiling point solvent.
なお、本発明シこおいては、この他に酸化防１１−剤な
とのｂ１１１成分を添加してもよい。In addition, in the present invention, a b111 component such as an antioxidant 11-agent may be added.
本発明の透明導電膜形成用塗布液は、例えばディンピン
グ法、スピンナー法、スプレー法などによって基板にＱ
、布される。その際、有機金属化合物は加水分解されな
いので、湿度、条件は特に限定されず、液は比較的長い
保存寿命を有する。また、高沸（ヱ溶媒の添加量を上記
の範囲で調整することによって揮発性をコントロールす
ることができるので、基板に塗布した後、適度な速度で
揮発させ、均一な１１１厚を形成することができる。さ
らに、低沸点溶媒が揮発した後、金属成分がある程度残
存する溶媒に溶けている状態を保つことができるので、
均質な被膜を形成することができる。The coating solution for forming a transparent conductive film of the present invention can be applied to a substrate using a dipping method, a spinner method, a spray method, etc.
, to be clothed. At this time, since the organometallic compound is not hydrolyzed, the humidity and conditions are not particularly limited, and the liquid has a relatively long shelf life. In addition, volatility can be controlled by adjusting the amount of high-boiling solvent added within the above range, so after applying it to the substrate, it can be evaporated at an appropriate rate to form a uniform 111 thickness. Furthermore, after the low boiling point solvent has volatilized, the metal components can remain dissolved in the solvent to some extent, so
A homogeneous film can be formed.
そして、液か塗布された基板を常温乾燥（低沸点溶媒の
揮発温度より低い温度で乾燥）することにより、低沸点
溶媒を揮発させ、有機金属化合物と有機７へインダーと
からなる膜を形成することかできる。こうして低沸点溶
媒を揮発させた後、４００〜６００°Ｃで焼成すること
により透ＩＪ’ｌ導電膜を形成することかできる。こう
して得られた透明導電膜は、均一な１１り厚を有し、従
来の組成の透明導電膜形成用液を用いて形成したものよ
り比較的低い抵抗値を示す。このように本発明により低
抵抗の透明導電膜が得られる理由はよく分からないが、
本発明においては有機金属化合物として非加水分解性の
ものを使用したことに関係があると思われる。Then, by drying the substrate coated with the liquid at room temperature (drying at a temperature lower than the volatilization temperature of the low-boiling point solvent), the low-boiling point solvent is volatilized and a film consisting of the organometallic compound and the inder to the organic 7 is formed. I can do it. After volatilizing the low boiling point solvent in this manner, a transparent IJ'l conductive film can be formed by baking at 400 to 600°C. The transparent conductive film thus obtained has a uniform thickness of 11 mm and exhibits a relatively lower resistance value than that formed using a transparent conductive film forming liquid having a conventional composition. Although it is not clear why a transparent conductive film with low resistance can be obtained by the present invention,
This seems to be related to the fact that the present invention uses a non-hydrolyzable organometallic compound.
「発明の実施例」
トリスアセチルアセトナートインジウム８７．５重量％
、ヒスアセチルアセトナートジブチルスズ１２５！Ｔｒ
都％からなる有機金属化合物５．５重量％、ニトロセル
ロース２．５重惧％、ベンジルアルコール２．０重部％
、メチルエチルケトン９０．０重量％からなる透明導電
膜形成用塗布液を作成した。"Example of the invention" Tris acetylacetonate indium 87.5% by weight
, hisacetylacetonate dibutyltin 125! Tr
Organometallic compound consisting of 5.5% by weight, 2.5% by weight of nitrocellulose, and 2.0% by weight of benzyl alcohol.
A coating solution for forming a transparent conductive film containing 90.0% by weight of methyl ethyl ketone was prepared.
この液にカラス基板を浸漬し、２００ｎ＋ｍ＃＋ｉｎの
スピードで引き上げた後、５０℃で２０分間乾燥し、さ
らに５００°Ｃで３０分間焼成して透明導電膜の被膜を
形成した。A glass substrate was immersed in this solution, pulled up at a speed of 200 n+m#+in, dried at 50° C. for 20 minutes, and further baked at 500° C. for 30 minutes to form a transparent conductive film.
この透明導電膜の被膜は厚さ４００ル、シート抵抗ＩＫ
Ω／口であり、厚ざのむらのない、良好なものであった
。This transparent conductive film has a thickness of 400 l and a sheet resistance of IK.
Ω/mouth, and was good with no uneven thickness.
また、上記透明導電膜形成用塗布液は、常温にて３ケ月
保存しても白濁が生ぜず、良好な保存寿命を示した。Moreover, the coating liquid for forming a transparent conductive film did not become cloudy even after being stored at room temperature for 3 months, and exhibited a good storage life.
「発明の効果」
以上説明したように、本発明によれば、インジウムとス
ズとを含む有機金属化合物として非加水分解性のものを
使用したので、液の安定性を向」―させ、保存寿命を投
くすることができる。また、高沸点溶媒を微量添加する
ことにより揮発性を適度に調整することができるので、
ディッピング等により塗布した際、むらのない均一な膜
厚とすることかできる。さらに、焼成して得られた透明
導電膜は比較的低い抵抗値を示す。``Effects of the Invention'' As explained above, according to the present invention, since a non-hydrolyzable organometallic compound containing indium and tin is used, the stability of the liquid is improved and the shelf life is improved. can be thrown. In addition, volatility can be adjusted appropriately by adding a small amount of high boiling point solvent.
When applied by dipping or the like, a uniform film thickness can be obtained. Furthermore, the transparent conductive film obtained by firing exhibits a relatively low resistance value.
Claims (1)
導Ｔｉ、膜形成用塗布液において、インジウムとススと
を含む非加水分解性の有機金属化合物３〜８毛量％、有
機バインダー１〜４重量％、沸点＋ｏｏ’ｃ以才、の高
沸点溶媒０．１〜５．０重量％、残部か−Ｆとして線点
］００’Ｃ未満の低綿点溶媒からなることを特徴とする
透明導電膜形成用塗布液。 （２、特許請求の範囲第１項において、前記有機金属化
合物はトリスアセチルアセトナートインジウムとヒスア
セチルアセトナートジブチルススとからなる透明導電膜
形成用塗布液。 （３）特許請求の範囲第１項または第２項において、醋
記高伽点溶媒はペンシルアルコール、ジプロピレングリ
コール、ヘンシルアセテート、カルヒトールアセテート
およびプチルセロンルブから選ばれた１種ないし２種以
上である透明導電膜形成用塗布液。[Scope of Claims] (1) Non-hydrolyzable organometallic compounds 3 to 8 containing indium and soot in a transparent conductive Ti film forming coating solution that is applied to a substrate and baked to form a transparent conductive film. Hair amount%, organic binder 1 to 4% by weight, boiling point + oo'c, high boiling point solvent 0.1 to 5.0% by weight, balance -F as line point] low cotton point solvent below 00'C A coating liquid for forming a transparent conductive film, characterized by comprising: (2. In Claim 1, the organometallic compound is a coating liquid for forming a transparent conductive film consisting of indium trisacetylacetonate and dibutylsuthane hisacetylacetonate. (3) Claim 1 Alternatively, in item 2, the coating liquid for forming a transparent conductive film, wherein the high point solvent is one or more selected from pencil alcohol, dipropylene glycol, hensyl acetate, calchytol acetate, and butylceronelube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10018584A JPS60245780A (en) | 1984-05-18 | 1984-05-18 | Coating solution for forming electrically conductive transparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10018584A JPS60245780A (en) | 1984-05-18 | 1984-05-18 | Coating solution for forming electrically conductive transparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60245780A true JPS60245780A (en) | 1985-12-05 |
Family
ID=14267245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10018584A Pending JPS60245780A (en) | 1984-05-18 | 1984-05-18 | Coating solution for forming electrically conductive transparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60245780A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009053688A1 (en) * | 2009-11-19 | 2011-05-26 | Ferro Gmbh | Screen-printable composition, useful for preparing conductive and transparent layer, comprises a screen printing medium, indium and tin compounds, which form indium tin oxide, and a low molecular weight hydrolyzable silicon compound |
| JP2017031497A (en) * | 2015-08-03 | 2017-02-09 | 小林 博 | Modification of surface for giving each of different multiple characteristics to component or substrate |
-
1984
- 1984-05-18 JP JP10018584A patent/JPS60245780A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009053688A1 (en) * | 2009-11-19 | 2011-05-26 | Ferro Gmbh | Screen-printable composition, useful for preparing conductive and transparent layer, comprises a screen printing medium, indium and tin compounds, which form indium tin oxide, and a low molecular weight hydrolyzable silicon compound |
| JP2017031497A (en) * | 2015-08-03 | 2017-02-09 | 小林 博 | Modification of surface for giving each of different multiple characteristics to component or substrate |
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