JPS6024044A - Manufacture of lead frame by vapor deposition of ionization - Google Patents
Manufacture of lead frame by vapor deposition of ionizationInfo
- Publication number
- JPS6024044A JPS6024044A JP8823183A JP8823183A JPS6024044A JP S6024044 A JPS6024044 A JP S6024044A JP 8823183 A JP8823183 A JP 8823183A JP 8823183 A JP8823183 A JP 8823183A JP S6024044 A JPS6024044 A JP S6024044A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- substrate
- hearth
- vapor deposition
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はイオン化蒸着によるリードフレーム用Ａｔ蒸着
Ｆｅ−Ｎｉ合金条の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an At-deposited Fe--Ni alloy strip for lead frames by ionized deposition.
現在、セラミックパッケージ用リードフレームとしては
Ｆｅ−’４２％Ｎｉ４２％Ｎｉ４を真空蒸着したフレー
ムを使用している。ＡＡを真空蒸着によりＦｅ−４２％
Ｎｉ合金条に被覆した場合、普通、Ａｔ被覆膜が密着性
や緻密性に欠けるので、この点を改善するために、一般
に基板を３００℃以上に加熱してＡｔの真空蒸着を行う
方法が行われている。Currently, a frame in which Fe-'42%Ni42%Ni4 is vacuum-deposited is used as a lead frame for a ceramic package. Fe-42% by vacuum evaporation of AA
When coated on a Ni alloy strip, the At coating film usually lacks adhesion and density, so in order to improve this point, a method is generally used in which the substrate is heated to 300°C or higher and At is vacuum-deposited. It is being done.
しかしながら、この場合、ＡＬの密着強度は確保される
が、蒸着されたＡｔ被覆膜と基板であるＦｅ−４２％Ｎ
ｉ合金との界面にＦｅとＮ１からなる脆い合金層が厚く
形成され、フレームの加工性及びゼンデイング性を低下
させる。従って、このような欠点を伴なわずに十分な密
着強度が得られるＡｔの蒸着方法が要求される。However, in this case, although the adhesion strength of AL is ensured, the deposited At coating film and the substrate Fe-42%N
A thick brittle alloy layer consisting of Fe and N1 is formed at the interface with the i-alloy, reducing the workability and bending properties of the frame. Therefore, there is a need for an At vapor deposition method that provides sufficient adhesion strength without such drawbacks.
従って、本発明の目的は、Ａ４／Ｆｅ−Ｎｉ合金界面に
合金層が形成されるのを抑制し、十分な密着強度を有す
るリードフレーム用Ａｔ・蒸％ Ｆ ６− Ｎ ｉ合金
条を得ることができる新規なリードフレーム製造方法を
提供することにある。Therefore, an object of the present invention is to suppress the formation of an alloy layer at the A4/Fe-Ni alloy interface and to obtain an At/vapor% F6-Ni alloy strip for lead frames that has sufficient adhesion strength. The purpose of the present invention is to provide a novel lead frame manufacturing method that enables the following.
すなわち、本発明は、高周波励起された不活性ガスプラ
ズマによりイオン化されたＡ４又はＡ７合金蒸気を基板
温度１５０〜３５０℃、基板電圧−２５〜−０，，３ｋ
ｖでＦ ｅ −Ｎ ｉ合金条の表面に゛蒸着させること
を特徴とするリード７Ｖ−ムの製造方法である。That is, in the present invention, A4 or A7 alloy vapor ionized by high-frequency excited inert gas plasma is heated at a substrate temperature of 150 to 350°C and a substrate voltage of -25 to -0.3k.
This is a method for manufacturing a lead 7V-mem, which is characterized in that it is vapor-deposited on the surface of a Fe--Ni alloy strip at a temperature of 100 nm.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
従来の真空蒸着法に対し、近年数多くの新しい蒸着法が
開発され、各種の技術分野に応用されている。例えば、
イオン化蒸着法もその一例であって、金属蒸気をイオン
化し、これを電場にて加速し、基板に衝突させて蒸着さ
せる方式であシ、大きな運動のエネルギーを蒸発原子に
与えることにより高い密着強度と緻密な膜質を得ること
ができる。In contrast to conventional vacuum evaporation methods, many new evaporation methods have been developed in recent years and are being applied to various technical fields. for example,
Ionization vapor deposition is one example of this method, in which metal vapor is ionized, accelerated in an electric field, and deposited by colliding with the substrate, which provides high adhesion strength by imparting large kinetic energy to the evaporated atoms. A dense film quality can be obtained.
本発明者らは、このような各種のイオン化蒸着法のうち
から、工業的にほぼ確立したプロセスである高周波励起
方式のリードフレーム製造への応用を試み、イオン化条
件とＡ４蒸着膜の性状について系統的且つ詳細な実験や
検討を行なった結果、多くの製造因子のうちでも特に基
板温度及び基板電圧が大きな影響を及ぼしていることが
判明し、Ａｔ蒸着Ｆｅ−Ｎｉ 合金条よりなるリードフ
レームの製造に際し両回子の最も好適な条件を見出し、
前記した如き本発明を達成するに至った。Among these various ionization vapor deposition methods, the present inventors attempted to apply the high frequency excitation method, which is an almost industrially established process, to the production of lead frames, and systematically investigated the ionization conditions and properties of the A4 vapor deposited film. As a result of extensive and detailed experiments and studies, it was found that among the many manufacturing factors, substrate temperature and substrate voltage have a particularly large influence, and this has led to the production of lead frames made of At vapor-deposited Fe-Ni alloy strips. In order to find the most suitable conditions for both cases,
The present invention as described above has been achieved.
前記したように、本発明においては基板温度を１５０〜
３５０℃、基板電圧を−２５〜−〇、 ３ ｋＶに規定
してＡｔのイオン化蒸着を行って−いるが、基板温度Ｔ
（’ＣＤと基板電圧−Ｅ−（ｋＶ）とが１００≦ＴＥ≦
６００なる関係にあるときに特に良好な結果が得られる
。As mentioned above, in the present invention, the substrate temperature is set to 150-150°C.
Ionized deposition of At was carried out at 350°C with a substrate voltage of -25 to -0, 3 kV, but the substrate temperature T
('CD and substrate voltage -E-(kV) are 100≦TE≦
Particularly good results are obtained when the relationship is 600.
基板温度が３５０℃以上ではＡｌ／Ｆｅ−Ｎｉ合金基板
界面に脆い合金層が形成され且っＡＡ結晶粒の粗大化を
生じ、また基板温度が１５０℃以下では蒸着膜と基板と
の密着性が不足する。When the substrate temperature is above 350°C, a brittle alloy layer is formed at the interface of the Al/Fe-Ni alloy substrate, causing coarsening of AA crystal grains, and when the substrate temperature is below 150°C, the adhesion between the deposited film and the substrate deteriorates. Run short.
また、基板電圧が−０，３ｋＶ以上ではＡｔ蒸着層とＦ
ｅ−Ｎｉ合金基板との密着性が不足し、−２，５ｋＶ以
下ではイオンによるゼン・Ｚ−ドメントの影響が太き過
ぎ、Ｆｅ−Ｎｉ合金基板の温度を上昇させ、Ａｔ蒸着膜
の結晶粒を粗大化する。In addition, when the substrate voltage is -0.3 kV or more, the At vapor deposition layer and F
The adhesion with the e-Ni alloy substrate is insufficient, and below -2.5 kV, the influence of Zen Z-ment caused by ions is too strong, increasing the temperature of the Fe-Ni alloy substrate and causing the crystal grains of the At vapor deposited film to deteriorate. coarsen.
本発明で用いられる蒸着金属としてはＡｔのみならず、
Ａｔ−８ｔ合金、Ａｔ−Ｍｇ合金、Ａ４−Ｍｇ＝Ｚｒ合
金、ＡＡ−８ｔ−Ｍｎ合金を用いることができる。The vapor-deposited metal used in the present invention includes not only At but also
At-8t alloy, At-Mg alloy, A4-Mg=Zr alloy, and AA-8t-Mn alloy can be used.
基板金属としては、Ｆｅ−Ｎｉ合金（例えば、Ｆｅ−４
２％Ｎｉ合金、Ｆｅ−３６％Ｎｉ 合金）及びＦｅ −
Ｎｉ−ｃｏ合金 （例えば、Ｆｅ−２９％Ｎｉ−１７１
Ｃｏ合金）（本発明ではこれらをＦ ｅ −Ｎ ｉ 合
金と総称する）を用いることができる。基板の構造及び
形状としては、上記のＦ ｅ −Ｎ ｉ合金よシなるリ
ードフレーム用平板状素材、平板状素材をリードフレー
ム状に打抜いたもの、コイル条合金条、及び短冊状合金
条がある。また、イオン化用放電ガスとしてはＡｒ。As the substrate metal, Fe-Ni alloy (for example, Fe-4
2%Ni alloy, Fe-36%Ni alloy) and Fe-
Ni-co alloy (e.g. Fe-29%Ni-171
Co alloy) (in the present invention, these are collectively referred to as Fe-Ni alloy) can be used. The structure and shape of the substrate include a flat plate material for a lead frame such as the above Fe-Ni alloy, a flat plate material punched into a lead frame shape, a coiled alloy strip, and a rectangular alloy strip. be. Moreover, Ar is used as the ionizing discharge gas.
Ｈｅ 、 Ｎｅ、Ｎ２等の不活性ガスが用いられる。An inert gas such as He, Ne, N2, etc. is used.
第１図は、本発明に用いられる高周波励起式イオン化蒸
着装置の一例を示す概略図である。排気口１を有する真
空容器２内に基板ホルダー３．高周波電極４．蒸着源用
ハース５．ハース近辺に位置する電子銃６及び基板ホル
ダーの背部に設けられた赤外ランプの如き加熱器７が設
けられている。FIG. 1 is a schematic diagram showing an example of a high frequency excitation type ionization vapor deposition apparatus used in the present invention. A substrate holder 3 is placed inside a vacuum container 2 having an exhaust port 1. High frequency electrode 4. Hearth for evaporation source 5. An electron gun 6 located near the hearth and a heater 7 such as an infrared lamp mounted on the back of the substrate holder are provided.
本発明の蒸着を行うには、基板ホルダー３のハース側に
Ｆｅ−Ｎｉ合金基板８に設け、ハース５に蒸着源９とし
てＡｔ又はＡｔ合金を収め、Ａｒガス等の不活性ガス圧
ｌＸｌ０−２Ｐａまでの減圧下にイオン化条件を行う。To carry out the vapor deposition of the present invention, a Fe-Ni alloy substrate 8 is provided on the hearth side of the substrate holder 3, At or an At alloy is housed in the hearth 5 as a vapor deposition source 9, and an inert gas such as Ar gas is Perform ionization conditions under reduced pressure up to
この場合、本発明に従って１加熱器７によって基板の温
度を１５０〜３５０℃に保ち、電源１０にてハース５と
基板との間に−０，３〜−２，５ｋＶ の電圧を印加し
、高周波電極４に１３５６メガヘルツの高周波を印加し
て、蒸発源９を電子銃６によシ融解蒸発させる。In this case, according to the present invention, the temperature of the substrate is maintained at 150 to 350° C. by heater 7, and a voltage of -0.3 to -2.5 kV is applied between hearth 5 and the substrate by power source 10, and high frequency A high frequency of 1356 MHz is applied to the electrode 4, and the evaporation source 9 is melted and evaporated by the electron gun 6.
以下、本発明を実施例によって説明する。Hereinafter, the present invention will be explained by examples.
実施例１
第１表に示す条件でＡｔ蒸着Ｆｅ−４２％Ｎｉ合金条を
作製し、その密着張度、界面での合金層厚さ、ｉタンビ
リティを測定した。イオン化蒸着は第１図に示す装置を
用いて行った。Example 1 An At vapor-deposited Fe-42%Ni alloy strip was produced under the conditions shown in Table 1, and its adhesion tension, alloy layer thickness at the interface, and i-tamability were measured. The ionized vapor deposition was carried out using the apparatus shown in FIG.
なお、ここで密着強度は第２図に示すように２枚のＡｔ
皮膜２２を有する０、 ２５ ｍ＠厚のＦｅ −４２％
Ｎｉ合金基板２１を接着剤２３によって１５龍長に皮膜
側で接着し、入方向に引張ってせん断剥離試験を行ない
密着性を測定比較した。Note that the adhesion strength is determined by the adhesion strength between two At
0.25 m@thick Fe-42% with coating 22
The Ni alloy substrate 21 was adhered to the film side of the 15 dragon length using an adhesive 23, and a shear peel test was performed by pulling it in the entry direction to measure and compare the adhesion.
界面での合金層の厚さは、試料を樹脂に埋め込み、断面
を顕微鏡にて観察することによってめた。また、ゼンダ
ピリテイの評価は基板とＩンデイングワイヤとの接着部
のせん断試験を行い、せん断強さで比較した。この時の
ワイヤゼ・ンディングは超音波式で行い、ワイヤとして
はφ３０μのＡｔ−１係Ｓ１ ワイヤを用いた。The thickness of the alloy layer at the interface was determined by embedding the sample in resin and observing the cross section with a microscope. In addition, to evaluate the Zendability, a shear test was conducted on the bonded portion between the substrate and the inner wire, and the shear strength was compared. The wire ending at this time was performed using an ultrasonic method, and an At-1 S1 wire with a diameter of 30 μm was used as the wire.
この実施例の場合、次の条件については共通の条件で行
った。In this example, the following conditions were common.
Ａｒガス圧： ４ Ｘ １０”−２Ｐａ（真空蒸着法で
はＩ Ｘ １０−３Ｐａ ）イオン化率：約７係（イオ
ン化蒸着のみ）蒸着速度＝１００人／秒
蒸着厚さ：２μ
基板組成： Ｆｅ−４２９３Ｎｉ合金
基板前処理：アルコール超音波洗浄
基板のイオンゼンノζ−ド： 有
蒸着金属組成：９９．９９チＡ７
なお、比較例として従来の真空蒸着も行い、結果を第１
表に示した。Ar gas pressure: 4 X 10"-2 Pa (I X 10-3 Pa for vacuum evaporation method) Ionization rate: about 7 factors (ionization evaporation only) Vapor deposition rate = 100 people/sec Deposition thickness: 2μ Substrate composition: Fe-4293Ni Alloy substrate pretreatment: Alcohol ultrasonic cleaning Substrate ion Zenode: Deposited metal composition: 99.99% A7 As a comparative example, conventional vacuum evaporation was also performed, and the results are shown in the first table.
Shown in the table.
以上の結果から、本発明の蒸着方法の場合、従来の真空
蒸着法や比較例によるイオン化蒸着法と比較して、合金
層を形成しないでしかも高い密着強度とせん断強さを有
していることがわかる。From the above results, the vapor deposition method of the present invention has higher adhesion strength and shear strength without forming an alloy layer, compared to the conventional vacuum vapor deposition method and the ionization vapor deposition method according to the comparative example. I understand.
実施例２
第１図に示したイオン化蒸着装置を用い、第２表に示す
条件でＡ４蒸着Ｆｅ−４２％Ｎｉ合金条を作製した。な
お他の条件は実施例１と同様であった得られた合金条の
密着強度を実施例１と同様に測定した。結果を第２表に
示した。Example 2 Using the ionization vapor deposition apparatus shown in FIG. 1, an A4 vapor-deposited Fe-42%Ni alloy strip was produced under the conditions shown in Table 2. The other conditions were the same as in Example 1. The adhesion strength of the obtained alloy strip was measured in the same manner as in Example 1. The results are shown in Table 2.
第２表
□この実施例は、いずれも １００≦ＴＥ≦６００（但
し、Ｔは基板温度（℃）、−Ｅ基板電圧（ｋＶ） ）を
満足する条件であって、密着強度は実施例１における本
発明の試料よシ更姉優れていることがわかる。Table 2 □ In this example, the conditions were as follows: 100≦TE≦600 (where T is the substrate temperature (°C), -E substrate voltage (kV)), and the adhesion strength was the same as in Example 1. It can be seen that this sample is superior to the sample of the present invention.
以上のように、本発明により、高周波励起式イオン化蒸
着法によシ基板温度１５０〜３５０℃、基板電圧−２，
５〜−０，３ｋＶでＡｔ又はＡｔ合金をＦｅ＝Ｎｉ合金
上に蒸着させることによシＡｔ又はＡ４合金層とＦｅ−
Ｎｉ合金との間に合金層を生ずることなく緻密性、密着
性のよい蒸着膜を形成させることができ、さらにボンデ
ィングワイヤとのゼンダビリテイも良好である。また、
蒸発金属はイオン化されており、真空蒸着法と比較して
蒸発金属粒子は高エネルギーを有しているので低温でも
十分な密着性が得られる。従って、高温による基板の反
りや硬度の低下を防止することができる。As described above, according to the present invention, high-frequency excitation ionization vapor deposition is performed at a substrate temperature of 150 to 350°C, a substrate voltage of -2,
The At or A4 alloy layer and the Fe-
A vapor deposited film with good density and adhesion can be formed without forming an alloy layer between the Ni alloy and the bonding wire, and also has good sendability with the bonding wire. Also,
The evaporated metal is ionized, and the evaporated metal particles have higher energy than in vacuum evaporation, so sufficient adhesion can be obtained even at low temperatures. Therefore, it is possible to prevent the substrate from warping or decreasing its hardness due to high temperatures.
第１図は本発明に用いる高周波励起式イオン化蒸着装置
の概略図、第２図は蒸着された皮膜の密着性を測定する
場合の説明図である。
２・・・・・・真空容器、３・・・・・・基板ホルダ！
、４・・・・・・高周波電極、５・・・・・・・・−ス
、６・・・・・・電子銃、？・・・・・・加熱器、８・
・・・・・基板、９・・・・・・蒸発源、１０・・・・
・・電源、２１・・・・・・基板、２２・・・・・・蒸
層膜、２３・・・・・・接着剤。
犀 １ 目
第Ｚ図FIG. 1 is a schematic diagram of a high frequency excitation type ionization vapor deposition apparatus used in the present invention, and FIG. 2 is an explanatory diagram for measuring the adhesion of a deposited film. 2... Vacuum container, 3... Substrate holder!
, 4...High-frequency electrode, 5...-S, 6...Electron gun, ?・・・・・・Heating device, 8・
...Substrate, 9...Evaporation source, 10...
...Power source, 21...Substrate, 22...Vaporized film, 23...Adhesive. Rhinoceros 1st item Z diagram
Claims (2)
ン化されたＡ７．又はＡｔ合金の蒸気を基板温度１５０
〜３５０℃、基板電圧−２５〜−０，３’ｋＶでＦｅ−
Ｎｉ合金条の表面に蒸着させることを特徴とするリード
フレームの製造方法。(1) A7. ionized by high frequency excited inert gas plasma. Or At alloy vapor at substrate temperature 150
Fe-
A method for producing a lead frame, which comprises vapor deposition on the surface of a Ni alloy strip.
）とし／ζ場合に、基板温度と基板電圧の関係が１００
≦ＴＥ≦６００の範囲にある特許請求の範囲第（１）項
に記載のリードフレームの製造方法。(2) Set the substrate temperature to T(6) and the substrate voltage to -E (kV
)/ζ, the relationship between substrate temperature and substrate voltage is 100
The method for manufacturing a lead frame according to claim (1), which is in the range of ≦TE≦600.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8823183A JPS6024044A (en) | 1983-05-19 | 1983-05-19 | Manufacture of lead frame by vapor deposition of ionization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8823183A JPS6024044A (en) | 1983-05-19 | 1983-05-19 | Manufacture of lead frame by vapor deposition of ionization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6024044A true JPS6024044A (en) | 1985-02-06 |
Family
ID=13937087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8823183A Pending JPS6024044A (en) | 1983-05-19 | 1983-05-19 | Manufacture of lead frame by vapor deposition of ionization |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6024044A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6421060A (en) * | 1987-07-15 | 1989-01-24 | Kobe Steel Ltd | High-corrosion resistant product plated with al-cr alloy and its production |
| JPH0325977A (en) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | Schottky barrier diode |
| KR100493187B1 (en) * | 1997-11-13 | 2005-09-06 | 삼성테크윈 주식회사 | Lead frame and method of the manufacturing using vapor deposition |
-
1983
- 1983-05-19 JP JP8823183A patent/JPS6024044A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6421060A (en) * | 1987-07-15 | 1989-01-24 | Kobe Steel Ltd | High-corrosion resistant product plated with al-cr alloy and its production |
| JPH0325977A (en) * | 1989-06-23 | 1991-02-04 | Fuji Electric Co Ltd | Schottky barrier diode |
| KR100493187B1 (en) * | 1997-11-13 | 2005-09-06 | 삼성테크윈 주식회사 | Lead frame and method of the manufacturing using vapor deposition |
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