JPS6024018A - Dry etching - Google Patents

Abstract

PURPOSE:To make contact direction of plasma to wafers uniform by a method wherein a plurality of the wafers to be subjected to dry etching simultaneously in the same processing chamber are subjected to a normal and reverse rotation during the etching process. CONSTITUTION:A prescribed number of wafers 50 are brought into an evacuated processing chamber 10 and put on a table 11. A prescribed etching gas is supplied to the processing chamber 10 and at the same time a pressure in the processing chamber 10 is controlled to the prescribed etching pressure. Under this condition, plasma is generated in the etching gas in a discharge space 20 and the wafers 50 are etched by this plasma. During the etching process, the table 11 is rotated to the regular and reverse direction by a pulse motor 39. With this constitution, contact direction of the plasma to the wafers can be made uniform and the uniformity of the etching can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a dry etching method, and particularly to a dry etching method suitable for simultaneously dry etching a plurality of wafers in the same processing chamber.

[Background of the invention]

In semiconductor manufacturing equipment that simultaneously dry-etches multiple wafers in the same processing chamber, a predetermined number of wafers are carried into the processing chamber, which is evacuated and introduced into the etching gas, and has a counter electrode and a predetermined discharge space. For example, a high frequency power source (hereinafter referred to as RT
Each of the wafers is placed at a predetermined position on a wafer mounting electrode (hereinafter referred to as a table) connected to a power supply. after that,
These wafers are etched by plasma generated by applying RF to etching gas, but at this time,
Chikuri rotates the table in only one direction.

Since the table is rotated in only one direction during the etching process, the plasma comes into contact with the wafer in an uneven direction, resulting in a reduction in the uniformity of etching.

[Purpose of the invention]

An object of the present invention is to provide a dry etching method that can improve etching uniformity by equalizing the direction of plasma contact with a wafer.

[Summary of the invention]

The present invention is characterized in that a plurality of wafers that are simultaneously dry-etched in the same processing chamber are rotated in the forward and reverse directions during the etching process. This is intended to equalize the contact direction.

[Embodiments of the invention]

An embodiment of the present invention will be described with reference to the drawings.

The drawing shows the vacuum exhaust system (not shown) and the etching gas supply bag! A counter electrode (not shown) and a table 11 have a predetermined discharge space, and in this case, are disposed inside facing each other in the vertical direction.

In the center of the table 11, the shaft side is vertically installed, and the processing chamber 10
is provided on the pedestal 31. In the middle of the axis,
The magnetic sealing material n and the bearing O are encased, and the magnetic sealing material 32 and the bearing O are housed in the bearing case A. In the bearing case M, a worm gear shaft is attached to the lower end of a single shaft fixed to the processing chamber IO and the mount 31 through the cover, so as to mesh with the worm I.

The worm gear 37 is connected to a forward/reverse drive means such as a pulse motor, and the worm gear 37 is housed in a gear case. In addition, the axis (capital) has RF
A power source (not shown) is connected.

For example, a predetermined number of wafer recesses are carried into a processing chamber 10 that has been evacuated by an evacuation device, and these wafer recesses are each placed at a predetermined position on the table 11 . after that,
A predetermined etching gas is supplied to the processing chamber 10 by an etching gas supply device, and the processing chamber 10 is adjusted to a predetermined etching pressure by a vacuum exhaust device. In this state, by applying RF to the etching gas present in the discharge space, the etching gas is turned into plasma, and the wafer father is etched by this plasma.

In this case, the table 11 is rotated forward and backward using a pulse motor blade during the etching process. Further, the forward/reverse cycle is adjusted by, for example, a timer (not shown).

The dry etching method of this embodiment provides the following effects.

(1) Since the table is rotated forward and reverse during the etching process for multiple wafers placed on the table, the direction of plasma contact with the wafers during the etching process can be equalized, improving the uniformity of etching. can.

(2) Since the table is rotated forward and reverse during the etching process for a plurality of wafers placed on the table, the etching gas in the discharge space can be made uniform.

〔Effect of the invention〕

As explained above, in the present invention, by rotating the same processing chamber forward and backward during the etching period, it is possible to equalize the direction in which the plasma contacts the wafer during the error Δ etching process, thereby improving the uniformity of etching. There is an effect that can be done.

[Brief explanation of the drawing]

The drawing is a partial vertical cross-sectional view showing an example of a semiconductor manufacturing apparatus embodying the present invention.

Claims (1)

[Scope of Claim] A dry etching method in which a plurality of wafers are dry-etched simultaneously in the same processing chamber, the wafers being rotated forward and reverse during the etching process. 2. The dry etching method according to claim 1, wherein a wafer mounting electrode, which is installed in the processing chamber and on which the wafer is mounted at a predetermined position, is rotated forward and backward during the etching process.