JPS60230649A - 多層構造ドライ現像レジスト - Google Patents
多層構造ドライ現像レジストInfo
- Publication number
- JPS60230649A JPS60230649A JP8610584A JP8610584A JPS60230649A JP S60230649 A JPS60230649 A JP S60230649A JP 8610584 A JP8610584 A JP 8610584A JP 8610584 A JP8610584 A JP 8610584A JP S60230649 A JPS60230649 A JP S60230649A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- layer
- relief
- resist material
- etching resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- 230000035945 sensitivity Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 43
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8610584A JPS60230649A (ja) | 1984-05-01 | 1984-05-01 | 多層構造ドライ現像レジスト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8610584A JPS60230649A (ja) | 1984-05-01 | 1984-05-01 | 多層構造ドライ現像レジスト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60230649A true JPS60230649A (ja) | 1985-11-16 |
| JPH0449937B2 JPH0449937B2 (OSRAM) | 1992-08-12 |
Family
ID=13877421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8610584A Granted JPS60230649A (ja) | 1984-05-01 | 1984-05-01 | 多層構造ドライ現像レジスト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60230649A (OSRAM) |
-
1984
- 1984-05-01 JP JP8610584A patent/JPS60230649A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449937B2 (OSRAM) | 1992-08-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |