JPS60229342A - N type silicon wafer with through hole and manufacture thereof - Google Patents
N type silicon wafer with through hole and manufacture thereofInfo
- Publication number
- JPS60229342A JPS60229342A JP59085793A JP8579384A JPS60229342A JP S60229342 A JPS60229342 A JP S60229342A JP 59085793 A JP59085793 A JP 59085793A JP 8579384 A JP8579384 A JP 8579384A JP S60229342 A JPS60229342 A JP S60229342A
- Authority
- JP
- Japan
- Prior art keywords
- type silicon
- hole
- silicon wafer
- etching
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000005530 etching Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 9
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 230000007261 regionalization Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 40
- 239000000758 substrate Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000004587 chromatography analysis Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000866 electrolytic etching Methods 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/60—Construction of the column
- G01N30/6095—Micromachined or nanomachined, e.g. micro- or nanosize
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Treatment Of Liquids With Adsorbents In General (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、貫通孔、特に精密な寸法の貫通孔を有するシ
リコンウェハに関し、特に、ポータプルなキャピラリー
〃スクロマトグラフイ分析用のシリコン基板に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a silicon wafer having through holes, particularly through holes of precise dimensions, and particularly relates to a silicon substrate for portable capillary chromatographic analysis. .
（ロ） 従来技術
シリコンウェハの表面に、キャピラリーカラム用の溝及
びシリコンウェハを貝通釘るキャピラリーカラム入口用
の孔を有するへ・ヤビラリー〃スクロマトグラブ装置用
基板は、既に公知である。(B) Prior Art A substrate for a chromatograph device, which has a capillary column groove and a capillary column inlet hole through which the silicon wafer is inserted, is already known.
ところで、このようなキャピラリーカラム用の溝及び貫
通孔をシリコンウェハ面−Ｌに形成する場合、従来は、
キャピラリーカラム形状のエツチング領域或は貫通孔を
形成する領域を残して、口形シリコンウェハ面を、高温
トで水蒸気処理し、二酸化ケイ素保護膜（Ｓｉｎ２）を
シリコンウェハ面に形成させて、このシリコンウェハを
工７チング処理して形成していた。By the way, when forming such grooves and through holes for capillary columns on the silicon wafer surface L, conventionally,
The surface of the mouth-shaped silicon wafer is treated with water vapor at a high temperature, leaving an etched region in the shape of a capillary column or a region in which through holes are to be formed, to form a silicon dioxide protective film (Sin2) on the surface of the silicon wafer. It was formed by a 7-etching process.
しかし、１０ないし２０μｌの浅い溝と４００ないし５
００μｌというシリコンウェハの厚さ１こ相当する長さ
を有する貫通孔とを、エツチング処理により形成するに
は、浅い溝を、異ノブ性のエツチング剤である７フ化水
素酸溶液でエツチング処理して形成し、貫通化を、異り
性工ンナング削の水酸化カリウム溶液でエツチング処理
して形成していた。However, shallow grooves of 10 to 20 μl and 400 to 50 μl
In order to form a through hole having a length of 00 μl, which is equivalent to one thickness of a silicon wafer, by etching, a shallow groove is etched with a 7-hydrofluoric acid solution, which is an etching agent with different properties. The perforation was formed by etching with a potassium hydroxide solution used for different etching.
しかし、シリコンウェハ面に二酸化ケイ素保護膜を形成
する場合、この丁、酸化ケイ素保護膜は、０．５ないし
１μｌと薄いために、ピンホールが生じ易く、しかも、
ｎ形シリコンウェハにおけるｎ形半導体を形成する不純
物成分すなわちドナーの分布が一様でないために、エツ
チング速度が一様でないところ、長時間に亘すニ種類の
エツチング剤で処理すると、そのエツチング率の＠整が
難しく、従来の方法では、・Ｊ′法公差が大きくなり、
キャピラリーカラムに適する一様な溝や貫通孔の形成は
困難であり、また、再現性に乏しいものであった。However, when forming a silicon dioxide protective film on a silicon wafer surface, this silicon oxide protective film is as thin as 0.5 to 1 μl, so pinholes are likely to occur.
Because the distribution of impurity components, that is, donors that form the n-type semiconductor in the n-type silicon wafer is not uniform, the etching rate is not uniform, but when treated with two types of etching agents for a long period of time, the etching rate changes. @ It is difficult to align, and with the conventional method, the J' method tolerance becomes large,
Forming uniform grooves and through holes suitable for capillary columns is difficult and has poor reproducibility.
（ハ） 目 的
本発明者らは、従来法における問題点を解決すべく、シ
リコンウェハのエツチング処理技術の研究を進めた結果
、ドナー濃度の＾いｎ形シリコン半導体層とこの層に比
してドナー濃度の低いｎ形シリコン半導体層とを有する
シリコンウェハのエツチングの際に、ドナー濃度の畠い
ｎ形シリコン半導体層の方が、ドナー濃度が低いｎ形シ
リコン半導体層に比較してエンチングされ易いことを発
見した。しかもｎ形シリコンウェハ面へのドナー濃度の
高いｎ形シリコン半導体層の俣様形成は、正確かつ容易
に行えるところから、本発明に到達した。(C) Purpose In order to solve the problems in the conventional method, the present inventors conducted research on etching processing technology for silicon wafers, and as a result, an n-type silicon semiconductor layer with a high donor concentration and a When etching a silicon wafer having an n-type silicon semiconductor layer with a low donor concentration, the n-type silicon semiconductor layer with a high donor concentration is etched more than the n-type silicon semiconductor layer with a low donor concentration. I discovered something easy. Moreover, the present invention has been achieved because it is possible to accurately and easily form an n-type silicon semiconductor layer having a high donor concentration on the surface of an n-type silicon wafer.
すなわち、本発明は、超精密で加工精度の高いｎ形シリ
コンウェハのエツチング方法を提供するものである。ま
た、本発明は、高精能のポケットサイズ、或は、ポータ
プルのキャピラリーガスクロマトグラフィ分析装置用の
キャピラリーカラム用のシリコン基板のＳ！遣に適した
シリコンウェハのエツチング方法を提供するものである
。That is, the present invention provides a method of etching an n-type silicon wafer with ultra-precision and high processing accuracy. Furthermore, the present invention provides S! The present invention provides a method for etching silicon wafers suitable for etching.
（ニ） 発明の構成
本発明は、ドナー濃度の高いｎ形シリコン半導体層に接
する面を少（ともその一部に有する貫通孔を具備するこ
とを特徴とするｎ形シリコンウェハ、並びに、一方の面
から他方の面に連続するドナー濃度の＾いｎ形シリコン
半導体層を有するｎ形シリコンウェハをエツチング処理
することを特徴とする貫通孔を具備するｎ形シリコンウ
ェハの製造方法にある。(D) Structure of the Invention The present invention provides an n-type silicon wafer characterized by having through-holes in at least a portion of the surface in contact with an n-type silicon semiconductor layer having a high donor concentration, and one of the n-type silicon wafers. A method of manufacturing an n-type silicon wafer having through-holes is provided, which comprises etching an n-type silicon wafer having an n-type silicon semiconductor layer with a high donor concentration continuous from one surface to the other.
本発明において、ドナー濃度の高いｎ形シリコン半導体
層とは、ｒｌ形シリコンウェハのドナー濃度よりもドナ
ー濃度の高い層をいう。In the present invention, an n-type silicon semiconductor layer with a high donor concentration refers to a layer with a donor concentration higher than that of an RL-type silicon wafer.
本発明において、ｎ形シリコンウェハに形成されるドナ
ー濃度の高いｎ形シリコン半導体層のドナーは、例えば
、リン、砒素、アンチモン等の周期表＼ｌ族のドーパン
トであるが、この他にも、ｎ形シリコン半導体層を形成
するものであればドナーとして使用できる。In the present invention, the donor of the n-type silicon semiconductor layer with high donor concentration formed on the n-type silicon wafer is, for example, a dopant of group I of the periodic table such as phosphorus, arsenic, or antimony, but in addition to these, Any material that forms an n-type silicon semiconductor layer can be used as a donor.
キャピラリーカラム用に形成される貫通孔は、キャビフ
リークロマトグラフ装置において、キャピラリーカラム
の一般に使用できる寸法のものであり、例えば、幅０．
２ないし０．５＊ｚに対応する大きさのものである。The through-hole formed for the capillary column has a size that can generally be used for a capillary column in a cavity-free chromatography device, for example, a width of 0.5 mm.
The size corresponds to 2 to 0.5*z.
本発明において、この貫通孔用に、一方の面から他方の
面に連続するドナー濃度の高いｎ形シリコン層を形成す
るには、例えば、シリコンウェハの鏡面側とその反対側
の面から、夫々、正確に位置決めをして、例えば、リン
、砒素、アンチモン等の■族ドーパントすなわちドナー
をドーピングして行うのが、ドーピングに要する時間が
短縮でトるので好ましい。In the present invention, in order to form an n-type silicon layer with a high donor concentration that is continuous from one surface to the other for this through hole, for example, from the mirror side of the silicon wafer and from the opposite side, respectively. It is preferable to accurately position and dope with a Group 1 dopant, ie, a donor, such as phosphorus, arsenic, or antimony, because the time required for doping can be shortened.
本発明において使用されるエツチング剤としては、何れ
のエツチングも使用できるが、溝及び孔の輪郭を精密に
形成する一ヒでは、特に、異方性エツチング剤が使用さ
れる。Although any etching agent can be used in the present invention, an anisotropic etching agent is particularly used to precisely form the contours of grooves and holes.
異方性エツチング剤としては、例えば、Ｅ ｌ） ｌ’
として知られているエチレンノアミン、ピロカテコール
及び水の混合物、水酸化ナトリウム水溶液、並びに、水
酸化カリウム水溶液のようなアルカリ水溶液、特に、熱
アルカリ水溶液が好ましいものとしてあげられる。Examples of anisotropic etching agents include E l) l'
Preference is given to aqueous alkaline solutions, especially hot aqueous alkaline solutions, such as mixtures of ethylenenoamine, pyrocatechol, and water, known as pyrocatechol, aqueous sodium hydroxide, and aqueous potassium hydroxide.
しかし、これらの外にも、ＨＮＡエンチ剤、つまり、弗
酸、硝酸、酢酸の混合物が使用できる。However, besides these, HNA quenching agents, ie mixtures of hydrofluoric acid, nitric acid and acetic acid, can be used.
異方性エツチングをｎ形シリコンウェハ鏡面に施す場合
、ｎ形シリコンウェハ鏡面が、面指数＋１００１の面で
あると、例えば、正方形、艮り形にエツチングされるが
、面指数＋１１１１の而では菱形にエツチングされるの
で、面指数１１００１１７）面を使用するのが好ましν
１゜
本発明におけるエツチング処理は、所定域ｔこドナー濃
度の高いｎ形シリコン半導体層を形成したＴｌ形シリコ
ンウニ／）を、エツチング剤に接触させて行う。異方性
エツチング処理の場合には、ピラミッド形にエツチング
されるので、形成された溝の周囲にドナー濃度が高１１
ｎ形シリコン半導体層が残留することとなる。エツチン
グ速度を増加させるときは、ｎ形シリコンツエノ為とド
ナー濃度１．ｔ＾いｎ形シリコン半導体層の間−二、直
流電圧を１１加して行うのがよい。この場合には、ドナ
ー濃度の＾いｎ形シリコン半導体層を陽極に接続して、
加熱下にエツチング処理を行うのが好まい１゜（ホ）
実施例
第１図は、本発明のキャピラリークロマトグラフ装置の
カラム用基板の一実施例の平面図であＩ）、第２図は、
本発明のキャピラリークロマトグラフ装置のカラム用基
板で９１遺したキャピラリーカラムの一例の部分断面図
である６第３図は、本発明のキャピラリークロマトグラ
フ装置のカラム用基板の製法の一実施例を示す図である
。When performing anisotropic etching on the mirror surface of an n-type silicon wafer, if the mirror surface of the n-type silicon wafer is a surface with a surface index of +1001, it will be etched into, for example, a square or a rectangular shape, but if the surface index is +1111, it will be etched into a diamond shape. Therefore, it is preferable to use a surface with a surface index of 1100117).
1. The etching process in the present invention is carried out by bringing the Tl type silicon urchin (T1), on which an n type silicon semiconductor layer with a high donor concentration is formed in a predetermined area, into contact with an etching agent. In the case of anisotropic etching, the etching is performed in a pyramid shape, so the donor concentration is high around the grooves formed.
The n-type silicon semiconductor layer will remain. When increasing the etching rate, increase the donor concentration to 1. It is preferable to apply a DC voltage of 11 to 100 nm between the n-type silicon semiconductor layers. In this case, an n-type silicon semiconductor layer with a low donor concentration is connected to the anode,
It is preferable to perform etching treatment under heating 1° (E)
Embodiment FIG. 1 is a plan view of an embodiment of the column substrate of the capillary chromatography device of the present invention, and FIG.
FIG. 3 is a partial cross-sectional view of an example of a capillary column 91 made up of a column substrate for a capillary chromatograph apparatus of the present invention. FIG. It is.
以下、これらの図を参照して、本発明を説明するが、本
発明は、これらの説明によって、何ら限定されるもので
はない。Hereinafter, the present invention will be explained with reference to these figures, but the present invention is not limited by these explanations.
シリコンウェハ１の鏡面、例えば、面指数１１００１面
上に、幅４００ないし５００μｌ、深さ１０ないし２０
μ置の大きさで、キャピラリーカラム溝２及びキャビフ
リーカラム溝に接続する熱伝導度検出器４の徘ガス流路
溝７を形成すると共に、シリコンウェハ１を貫通して設
けられる孔３及び８は、夫々、キャピラリーカラム１２
の一方の端及び徘〃ス流路溝７の端に接続する。１ｔｉ
Ｊ記貫通孔３は、ガス計量管、試料導入装置、圧力調整
装置等を介してキャリヤーガス源（共に図示されていな
い、）に連通し、キャピラリーカラム入口孔３とされる
６一方、前記貫通孔８は、熱伝導度検出器からの排出ガ
スの排出口８とされる。熱伝導度検出器には、例えば、
サーミスタ又は白金フィルム状抵抗体用の溝５及びこれ
らサーミスタ又は白−＆フィルム等の端子挿通用の貫通
孔６が形成される。On the mirror surface of the silicon wafer 1, for example, the surface index 11001, a width of 400 to 500 μl and a depth of 10 to 20 μl are deposited.
The holes 3 and 8 are formed by penetrating the silicon wafer 1 and have a size of about 10 μm, and form the wandering gas flow path groove 7 of the thermal conductivity detector 4 that connects to the capillary column groove 2 and the cavity free column groove. , respectively, capillary column 12
and the end of the wandering channel groove 7. 1ti
The J-marked through hole 3 communicates with a carrier gas source (both not shown) via a gas metering tube, a sample introduction device, a pressure adjustment device, etc., and serves as a capillary column inlet hole 3. 8 is an exhaust port 8 for exhaust gas from the thermal conductivity detector. Thermal conductivity detectors include, e.g.
A groove 5 for a thermistor or a platinum film resistor and a through hole 6 for insertion of a terminal such as the thermistor or a platinum film are formed.
このように、溝２．５及び７並びに溝に接続する貫通孔
３．６及び８が形成されたシリコンウェハ１の面に、例
えば、パイレックスガラス＃１ｉ１０を接着して、〃ス
クロマトグラフ装置のキャビフリーカラム及び検出器部
分が形ｄｊｌされる。In this way, for example, Pyrex glass #1i10 is adhered to the surface of the silicon wafer 1 in which the grooves 2.5 and 7 and the through holes 3.6 and 8 connected to the grooves are formed, and the cavity of the schromatographic apparatus is The free column and detector parts are shaped.
シリコンウェハ１の面に、キャピラリーカラムに適する
、幅４００ないし５００μｌ及び深さ１０ないし２０μ
屑の寸法の一様な溝及び４００ないし５００μｌの孔を
形成するには、この寸法で所定形状域にドナー濃度が高
いｎ形シリコン屑を形成し、これを電解エツチングして
行われる。On the side of the silicon wafer 1, a width of 400 to 500 μl and a depth of 10 to 20 μl, suitable for a capillary column.
In order to form grooves and holes of 400 to 500 .mu.l with uniform chip size, n-type silicon chips with this size and high donor concentration are formed in a predetermined shape area and then electrolytically etched.
電解エツチング装置１１には、加熱装置１２を有する電
解槽１３を用い、前記口形シリコンウェハ１のドナー濃
度が高いＤ形シリコン半導体屑を接続具】６で接続して
陽極とし、白金板１４を陰極として、水酸化カリウム水
溶液を電解液１５とし、０．５ボルトの直流電圧及び８
０℃前後の温度に一定に保たれた電解温度で電解による
エツチングを行う。この電解エツチングにおけるｒ１形
／リコンウエハ１とドナー濃度が１’；Ｊｌいｎ形ンリ
フン半導体屑９のエツチング率は、溝かにドナー濃度の
高いｎ形シリコン半導体Ｍ９の方か高率であり、口形シ
リコンウェハ１とドナー濃度の高いｎ形シリコン半導体
層９とではエツチング速度の（−で大きく相違しており
、キャピラリーカラム溝２のエツチング加工では、口形
シリコンウェハ１の工／チングによる溶失分は、液密を
維持側るトで無視できる量であるから、口形シリコンウ
ェハに特別な保１１１Ｎを用いる必要がない。The electrolytic etching device 11 uses an electrolytic bath 13 having a heating device 12, and connects the D-type silicon semiconductor scrap with a high donor concentration of the mouth-shaped silicon wafer 1 with a connector 6 to serve as an anode, and the platinum plate 14 as a cathode. As, potassium hydroxide aqueous solution is used as electrolyte 15, DC voltage of 0.5 volts and 8
Electrolytic etching is performed at a constant electrolytic temperature of around 0°C. In this electrolytic etching, the etching rate of the r1-type/recon wafer 1 and the n-type semiconductor chip 9 with a donor concentration of 1' is higher than that of the n-type silicon semiconductor M9 with a higher donor concentration in the groove, and The etching rate of the silicon wafer 1 and the n-type silicon semiconductor layer 9 with a high donor concentration is significantly different in terms of (-). Since the amount is negligible for maintaining liquid tightness, there is no need to use a special retainer 111N for the mouth-shaped silicon wafer.
このようにして、エツチング加重されたシリコンウェハ
１には、例えば、溝２の形成部には、幾分かドナー濃度
が高いｎ形シリコン半導体哨が残留することになる。In this way, in the silicon wafer 1 which has been subjected to etching stress, n-type silicon semiconductor trenches having a somewhat high donor concentration remain, for example, in the portion where the groove 2 is formed.
（へ）効 果
本発明の口形シリコンウェハのエツチング処理法は、例
えば、４００ないし５００μ肩という大きい寸法の孔を
、ドナー濃度が商いｎ形シリコン半導体層を、口形シリ
コンウェハのエンチング領域に形成側ることによっ゛６
極めて正確にエツチングすることかできる。しかも、こ
のようにして、エンチング領域と非エツチング領域にお
けるエツチング速度比の顕著な差を利用するために、更
に、過酷な電解エツチング法を適用しても、エツチング
精度の低トをきたすようなことに主らずに済み、特別な
エツチング速度調整手段等を考慮する必要がなくなる。(f) Effect: The method of etching a mouth-shaped silicon wafer according to the present invention can form holes with a large size of, for example, 400 to 500 μm, in the etched region of the mouth-shaped silicon wafer, by forming holes with a donor concentration of about 100 μm or more. By doing so ゛6
It can be etched with great precision. Moreover, even if a severe electrolytic etching method is applied to take advantage of the remarkable difference in etching rate ratio between the etched region and the non-etched region, the etching accuracy will be reduced. Therefore, there is no need to consider special etching speed adjustment means.
本発明のｎ形シリコンウェハのエツチング処理法は、特
に、〃スクロマトグラフ５！ｃ置用のシリコン基板、特
に、ポケットサイズのキャピラリーガスクロマトグラフ
装置のシリコン基板の製作に適するものである。The etching method for n-type silicon wafers of the present invention is particularly applicable to the method of etching a n-type silicon wafer. The present invention is suitable for manufacturing silicon substrates for storage, especially pocket-sized capillary gas chromatograph devices.
このように、本発明のｎ形シリコンウェハのエンチング
処理法によって、超精密級の加工精度が保たれるために
、高性能のキャピラリーカラムを、再現性よく、多量に
供給できることとなり、ポケットサイズのガス分析装置
、特に、ガスクロマトグラフィ分析装置を、安価に提供
することができる。As described above, the method of enching n-type silicon wafers of the present invention maintains ultra-precision processing accuracy, making it possible to supply high-performance capillary columns in large quantities with good reproducibility, and to supply pocket-sized gas Analyzers, particularly gas chromatography analyzers, can be provided at low cost.
したがって、いちいち試料採取して分析室に、ｔで持ち
帰ることなく、その場て・、例りば、集会場、地下鉄、
石油暖房室等の密閉された場所での分析が容易となるた
め１こ、酸素欠乏等による事故を未然に防止することが
できる。Therefore, instead of collecting samples one by one and taking them back to the analysis room by t, you can collect them on the spot, for example, at a gathering place, on the subway, etc.
Since analysis can be easily performed in a closed place such as an oil heating room, it is possible to prevent accidents caused by oxygen deficiency, etc.
本発明は、ポータプル或はポケッタブルなサイズで、高
性能のガス分析装置を提供するものであり、その影響は
大きい。The present invention provides a high-performance gas analyzer that is portable or portable, and has a great impact.
第１図は、本発明のｎ形シリコンウェハの一実施例のキ
ャピラリークロマトグラフ装置のカラム用基板の一実施
例の平面間であり、第２図は、本発明のｎ形シリコンウ
ェハの別の一実施例のキャピラリークロマトグラフ装置
のカラム用基板の部分断面図である。
第３図は、本発明のｎ形シリコンウェハ、特に、キャピ
ラリークロマトグラフ装置のカラム用基板についての製
法の一実施例を示す図て゛ある。
１はシリコンウェハ、２はキャピラリーカラム溝、３は
キャピラリーカラム人［１孔、４は熱１ム導６は端子挿
通孔、７は排ガス流路溝、８は排出口９はドナー濃度が
高いｎ形シリコン半導体層、１０は〃ラス板、１１は電
解エツチング装置、１２は加熱装置、１３は電解槽、１
４は陰極、１５は電解液、１６は電解用接続共である。
第１図
（FIG. 1 shows the planes of an embodiment of the column substrate of a capillary chromatography apparatus using an n-type silicon wafer of the present invention, and FIG. 2 shows another embodiment of the n-type silicon wafer of the present invention. FIG. 2 is a partial cross-sectional view of a column substrate of a capillary chromatography device according to an example. FIG. 3 is a diagram showing an embodiment of the method for manufacturing an n-type silicon wafer of the present invention, particularly a column substrate for a capillary chromatography device. 1 is a silicon wafer, 2 is a capillary column groove, 3 is a capillary column [1 hole, 4 is a thermal conductor 6 is a terminal insertion hole, 7 is an exhaust gas flow groove, 8 is an exhaust port 9 is an n-type silicon with a high donor concentration 1 is a semiconductor layer; 10 is a lath plate; 11 is an electrolytic etching device; 12 is a heating device; 13 is an electrolytic bath;
4 is a cathode, 15 is an electrolytic solution, and 16 is a connection for electrolysis. Figure 1 (
Claims (1)
を少くともその一部に有する貫通孔を具備することを特
徴とするｎ形シリコンウェハ。 ２、−−−）ｊの面から他方の面に連続するドナー濃度
の烏いｎ形シリコン半導体層を有するｎ形シリコンウェ
ハをエツチング処理することを特徴とする貫通孔を具備
するｎ形シリコンウェハの製造方法。[Claims] 1. An n-type silicon wafer comprising a through hole having at least a part of its surface in contact with an n-type silicon semiconductor layer having a high donor concentration. 2. ---) An n-type silicon wafer having through-holes characterized by etching an n-type silicon wafer having an n-type silicon semiconductor layer with a rough donor concentration that is continuous from the surface of j to the other surface. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085793A JPS60229342A (en) | 1984-04-27 | 1984-04-27 | N type silicon wafer with through hole and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085793A JPS60229342A (en) | 1984-04-27 | 1984-04-27 | N type silicon wafer with through hole and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60229342A true JPS60229342A (en) | 1985-11-14 |
Family
ID=13868762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59085793A Pending JPS60229342A (en) | 1984-04-27 | 1984-04-27 | N type silicon wafer with through hole and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60229342A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310122A (en) * | 1987-05-27 | 1988-12-19 | シーメンス、アクチエンゲゼルシヤフト | Method of forming hole or trench in n-type doped silicon layer or substrate |
| US4935040A (en) * | 1989-03-29 | 1990-06-19 | The Perkin-Elmer Corporation | Miniature devices useful for gas chromatography |
| US5087275A (en) * | 1987-09-22 | 1992-02-11 | Thomson-Csf | Electrochemical sensor having microcavities |
| US5720798A (en) * | 1996-04-30 | 1998-02-24 | Hewlett-Packard Company | Micromachined analyte trap for gas phase streams |
-
1984
- 1984-04-27 JP JP59085793A patent/JPS60229342A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310122A (en) * | 1987-05-27 | 1988-12-19 | シーメンス、アクチエンゲゼルシヤフト | Method of forming hole or trench in n-type doped silicon layer or substrate |
| US5087275A (en) * | 1987-09-22 | 1992-02-11 | Thomson-Csf | Electrochemical sensor having microcavities |
| US4935040A (en) * | 1989-03-29 | 1990-06-19 | The Perkin-Elmer Corporation | Miniature devices useful for gas chromatography |
| US5720798A (en) * | 1996-04-30 | 1998-02-24 | Hewlett-Packard Company | Micromachined analyte trap for gas phase streams |
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