JPS60227414A - Manufacturing apparatus of thin film - Google Patents

Abstract

PURPOSE:To avoid a damage occurring on a surface in a thin-film manufacturing apparatus utilizing electric discharge by a construction wherein an insulating plate formed of a quartz plate, an alumina plate or the like is interposed between a sample supporting plate and a substrate on which a thin film is made to grow. CONSTITUTION:Inside a vacuum tank 1 having a vacuum exhaust port 2 provided in the bottom surface, a target 3 for a thin-film base material and a grounded substrate holder 4 with a plurality of substrates 6 for deposition mounted thereon are disposed opposite to each other in a prescribed gap between them. In this construction, a thin insulating plate 5 being 0.5-1.5mm. thick and formed of a silica plate, an alumina plate, a glass plate or the like is mounted additionary on the holder 4, and the substrate 6 is mounted thereon. Thereafter a discharge gas is introduced from a leak valve 7 into the vacuum tank 1 so as for an inside pressure to be 10<-3>-10<-2>Torr, a power source 8 is connected to the target 3 to generate an electric discharge in the tank 1, and thereby the target 3 is evaporated and deposited on the substrates 6. A current flowing from the substrates 6 to the holder 4 is interrupted completely by this construction, and thus a thin film having a stable electric characteristic can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thin film manufacturing apparatus, and more specifically, to a thin film manufacturing apparatus that deposits a thin film through electric discharge.

[Background of the invention]

CVD (Chemical Vap) in glow discharge
orDeposition) method (hereinafter referred to as G-CVD method)
Along with thermal evaporation, sputtering has become the most common method of thin film deposition. The method of mediated electrical discharge electrochemically generates a reaction even with substances that do not necessarily exist in nature or have a weak reaction, thereby creating a thin film, so depending on the material, thin films with excellent properties may be obtained. In addition, RF (Radio) is often used.

The sputtering method is widely used as a method that can easily form a thin film even with materials that do not have a melting point or that react with the vapor deposition boat. To explain the principle of the device using sputtering as an example,
A base material on which a thin film is to be deposited is used as one electrode (target), and a thin film deposition substrate is set on the opposite electrode. These are installed in a vacuum chamber. Gas is flowed through this tank to maintain a vacuum of 10 to 10 Torr, and electric power is supplied between the electrodes.

At that time, the elements of the target base material that have been ejected by Ar' reach and are deposited on the opposite substrate holder. Regarding this, please refer to Thin Film Technology Handbook, written by Matzel (MATSSEL: THINFILM HANDB).
OOK) p, 4-31°↓970. Unlike the sputtering method, the G-CVD method introduces a film deposition base material in a gaseous state into a vacuum chamber. The discharge pressure is 0.1~I To
The decomposition reaction is promoted by supplying power to the electrodes placed in the vacuum chamber at a temperature of about rr, thereby depositing a film on the substrate set on the electrodes.

Since both of these methods involve electrical discharge, they have a greater electrical influence on the substrate during film deposition than methods such as vapor deposition, and if the substrate already has active circuits, they may destroy the elements on the substrate. In many cases, especially if the board has 5i
- When using an LSI, the pn junction formed in the substrate is often destroyed. The reason why the pn junction existing in the substrate is destroyed is that the effective current of the discharge power for film deposition flows through the substrate.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film manufacturing apparatus that does not have the above-mentioned problems and can form a thin film with stable electrographic properties.

[Summary of the invention]

The structure of the present invention for achieving the above object is that an insulating plate is interposed between the sample holding plate and the sample.

As the insulating plate, a plate-shaped one having a thickness of 0.2 to 6 mm is used. Although quartz, alumina, glass, etc. can be used, a quartz plate is most preferable from the standpoint of blocking current during discharge. Further, the insulating plate may be connected to the sample stage in advance, but it is more effective if it is removable for convenience such as cleaning. Normally, the sample on which a thin film is formed is
Although Si or other semiconductor substrates are used, these samples are provided with transistors and other active circuit elements. In order to prevent damage to these elements from unnecessary electrical effects such as current or voltage caused by the discharge, it is important that the thickness of the insulating plate be 0.2 to 6 mm. If it exceeds the above range, it is not preferable because it significantly reduces the insulation effect and the efficiency of thin film formation. This will be explained in detail below using examples.

[Embodiments of the invention]

FIG. 1 shows an example of the thin film manufacturing apparatus of the present invention. 1 is a vacuum chamber, and 2 is a vacuum exhaust port. The vacuum chamber is equipped with a target 3 for thin film base material and a substrate holder (holding plate) 4, and on this substrate holder 4 there is an insulating plate 5 of the present invention, on which a substrate for thin film deposition is placed. There are 6. The vacuum chamber further has a leak valve 7 for introducing discharge gas, and the gas is flowed through this valve to create an atmosphere for discharge at a vacuum level of 10-3 to 10-'' Torr in the case of sputtering. Next, from the power supply 8 connected to 3, a voltage of up to several V is supplied in the case of DC sputtering, and power is supplied within the range of several W/cm2 in the case of RF sputtering to form a discharge state. A thin film is deposited. At this time, the effective current is cut off by removing the insulating plate 5 under the substrate 6 when there is no insulating plate 5. As a result, there is no potential drop within the substrate 6, so the Destruction of the element can be prevented.Since the insulating plate of the present invention is inserted for the purpose of cutting off the effective direct current, this purpose can be achieved by laying a 5 mm thick quartz plate, alumina plate, or glass plate. , the most preferable state is about 0.5-1.5
A quartz plate with a thickness of mm is suitable, and by laying this plate, it is very effective when depositing an amorphous Si film by sputtering on an imaging scanning circuit composed of a Si MOS type. Yes, and compared to the case where the pn junction of the scanning circuit is often destroyed when this method is not used, this destruction could be prevented.

The above example is an example of an MO8 type board, but CCs other than MO8 type
It is also effective when using a substrate made up of elements such as a D-type element, and furthermore, it is also effective when using a compound semiconductor substrate such as a GaAs-based compound semiconductor substrate, and furthermore, it is formed on the surface of a Si substrate. When depositing a conductive material for wiring such as Afi, polycrystalline SL, Ta, Mo, Cr, etc. by sputtering after a junction has already been formed, or when depositing an insulating film by G-CVD or sputtering. is also valid.

〔Effect of the invention〕

As detailed above, one aspect of the present invention is to provide a thin film manufacturing apparatus that uses electrical discharge by interposing a thin insulating plate between the sample and the sample holding plate, thereby achieving good performance without damaging the elements on the surface of the substrate. The point that a thin film element can be formed;
The industrial benefits are huge.

[Brief explanation of the drawing]

FIG. 1 is a schematic sectional view of a thin film manufacturing apparatus as an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Vacuum exhaust port, 3... Target, 4... Sample holding plate, 5... Insulating plate, 6...
・Sample (substrate). 7...Leak bubble, 8...Power supply. Figure 1

Claims (1)

[Claims] A container, an atmosphere forming means for the container connected to the container, a sample holding plate provided in the container, and a discharge means provided at least in the vicinity of the holding plate. A thin film manufacturing apparatus characterized in that an insulating plate is interposed between the holding plate and the sample.