JPS60226498A - Preparation of starting material for single crystal - Google Patents

Preparation of starting material for single crystal

Info

Publication number
JPS60226498A
JPS60226498A JP59079143A JP7914384A JPS60226498A JP S60226498 A JPS60226498 A JP S60226498A JP 59079143 A JP59079143 A JP 59079143A JP 7914384 A JP7914384 A JP 7914384A JP S60226498 A JPS60226498 A JP S60226498A
Authority
JP
Japan
Prior art keywords
single crystal
raw material
alumina
producing
sol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59079143A
Other languages
Japanese (ja)
Inventor
Masanao Kunugi
正尚 功刀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP59079143A priority Critical patent/JPS60226498A/en
Publication of JPS60226498A publication Critical patent/JPS60226498A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides

Abstract

PURPOSE:Boehmite which has been obtained from aluminum isopropoxide by the sol-gel method is treated with heat at high temperatures to obtain Al2O3 as a starting material for growing single crystals with no defects, especially free from bubbles, excellent clarity and good luster. CONSTITUTION:Aluminum isopropoxide is hydrolyzed, according to the sol-gel method, in an aqueous hydrochloric acid of 1-3pH at 10-20 deg. centigrade for 10-20hr to form boehmite (AlOOH). The product is heat treated at high temperature of 1,000-1,200 deg.C in air to give alpha-Al2O3. The alpha-Al2O3 is thoroughly mixed with Cr2O3 or the like, as a colorant, then pressed and sintered into a rod. The rod is set together with a seed crystal in a FZ furnace, heated for melting to allow the single crystal to grow at a speed of less than 4.0mm./hr.

Description

【発明の詳細な説明】 〔技術分野〕 本発明はアルミニウムイソプロポキシドからゾル−ゲル
法により合成したアルミナを用い、フローティングゾー
ン法によシ単結晶を育成するための原料製造法である。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention is a raw material manufacturing method for growing single crystals by a floating zone method using alumina synthesized from aluminum isopropoxide by a sol-gel method.

〔従来技術〕[Prior art]

従来、フローティングゾーン法(以下FZ法)は、新し
い組成の結晶を手軽に短時間で合成できるということか
ら、新合成結晶の研究の点で大きく普及してきた。また
これら結晶の新しい育成法に関する特許も数多くだされ
ている。しかし結晶の品餉面に関するものはほとんどな
く、該方法で育成した結晶には多数の欠陥が入り易く、
特にその中で肉眼でも観察される気泡は大きな間趙であ
り、宝石用として用いる結晶においては、これは本来の
光の反射、ン(折を防り、宝石として!要な透明度、テ
リを減少させ宝石としての価値を減少させる大きな原因
となっている。
Conventionally, the floating zone method (hereinafter referred to as FZ method) has been widely used in research on new synthetic crystals because it allows crystals with new compositions to be easily synthesized in a short time. Many patents have also been issued regarding new methods of growing these crystals. However, there is little information regarding the quality of crystals, and crystals grown using this method tend to have many defects.
In particular, the bubbles that can be observed with the naked eye are large bubbles, and in crystals used for jewelry, they prevent the original light from reflecting and breaking, reducing the transparency and texture that are essential for jewelry. This is a major cause of decreasing the value of gemstones.

〔目的〕〔the purpose〕

本発明は以上の間龜点t−解決するもので、その目的と
するとζろ祉、アルミナを原料とするA右晶において、
このアルミナをゾル−ゲル法によってアルミニウムイソ
プロポキシドを加水分触したものを使用し、FZ法によ
って育成するん高中に気泡のないものを合成するための
原料を製造する方法を提供することにある。
The present invention is intended to solve the above-mentioned problems, and its purpose is to solve the above-mentioned problems in A-right crystals using alumina as a raw material.
The object of the present invention is to provide a method for producing a raw material for synthesizing alumina without air bubbles in the alumina grown by the FZ method using alumina that has been hydrolyzed with aluminum isopropoxide by the sol-gel method. .

〔概要〕〔overview〕

本発明は融液から単結晶を育成する方法において、上記
、融液の原料粉末にアルミナ(AAiOa )を用いる
場合、峨アルミナをアルミニウムイソプロポキシドを加
水分解し、これを1000℃〜1200℃の高温で処理
したものをFZ法による原料として使用することを特徴
とする。
The present invention provides a method for growing a single crystal from a melt, in which when alumina (AAiOa) is used as the raw material powder for the melt, the alumina is hydrolyzed with aluminum isopropoxide and then heated at 1000°C to 1200°C. It is characterized in that the material treated at high temperature is used as a raw material for the FZ method.

本発明におけるゾル−ゲル法による、アルミニウムイン
プロポキシドの加水分解において、加水分解を行なわせ
るtl液はPHI〜PH8の塩酸水溶液が好ましい。ま
た加水分解を行なう温度は10℃〜加℃の細、囲が最適
であり、10℃以下では加水分解が十分性なわれず、該
粉末を使用すると焼結において収縮率が大きく、気泡が
中に閉じこめられてしまい好ましくない。また20℃以
上では加水分解がはやく進み、粒径が大きくなり、焼結
性を低下させるため上述の&Iノ四が望ましい。
In the hydrolysis of aluminum inpropoxide by the sol-gel method in the present invention, the TL solution used for hydrolysis is preferably an aqueous hydrochloric acid solution with a PHI to PH8. In addition, the optimal temperature for hydrolysis is between 10°C and 10°C, and below 10°C the hydrolysis will not be sufficient, and if this powder is used, the shrinkage rate will be large during sintering, and air bubbles will be formed inside. I don't like being trapped inside. Further, at temperatures above 20° C., hydrolysis proceeds rapidly, the particle size increases, and sinterability deteriorates, so the above-mentioned &I-4 is preferable.

本発明における加水分解時1ム1は10時間〜20時間
の範囲が14jL通であり、10時間以下では加水分解
が未完全であや、20時間以上では加水分解時1ムに終
っており、これ以上有なっても変らない為上述の範囲が
望ましい。
In the present invention, 1 ml during hydrolysis is 14jL in the range of 10 to 20 hours, and if it is less than 10 hours, the hydrolysis is incomplete and the amount is 1 ml if it is over 20 hours. The above-mentioned range is desirable because it does not change even if it is more than that.

本発明における加水分解後の生成物であるべ一マイ) 
(&#OL+)1 )を高温処理してアルミナに変える
温度は1000℃〜1200℃の範囲が最適で □あ、
p1000℃以下ではα−アルミナではなくθ−アルミ
ナに変わ一す、1200℃以上ではα−アルミナに変わ
るが2次粒子が形成され、粒径が大きくなり、焼結性が
低下するため上述の範囲が望ましい。
The product after hydrolysis in the present invention is
The optimum temperature for converting (&#OL+)1) into alumina by high-temperature treatment is in the range of 1000℃ to 1200℃ □Ah.
Below 1000℃, it changes to θ-alumina instead of α-alumina, and above 1200℃, it changes to α-alumina, but secondary particles are formed, the particle size increases, and sinterability decreases, so the above range is desirable.

本発明におけるアルミナ原料はyz法による単結晶育成
に用いるものである。コランタム結晶の場合アルミナを
主原料とし、着色剤として、ルビーは酸化第ニクロムま
たは塩化第ニクロム、パバラチアは酸化第ニクロムと酸
化ニッケル、ブルーサファイヤは酸化第二鉄と酸化チタ
ンを加え、アルミナ乳鉢の中でよく混合し、該混合粉末
をラバーチューブに詰め、ラバープレスによって丸棒状
に加圧成型する。さらに該成型体を電気炉で焼結し、F
Z法による単軸高含成用の原料とするが、上述のアルミ
ニウムイソプロポキシドから合成したアルミナ原料を用
いることによって、これら着色剤の硬類及びtlに影舎
なく、気泡のない結晶を合成することができる。
The alumina raw material in the present invention is used for single crystal growth by the yz method. In the case of corantum crystals, alumina is the main raw material, and as a coloring agent, dichromium oxide or dichromium chloride is added for ruby, dichromium oxide and nickel oxide for pavarathia, and ferric oxide and titanium oxide are added for blue sapphire, in an alumina mortar. Mix well, pack the mixed powder into a rubber tube, and pressure mold it into a round bar shape using a rubber press. Furthermore, the molded body is sintered in an electric furnace, and F
By using the alumina raw material synthesized from the above-mentioned aluminum isopropoxide, which is used as a raw material for uniaxial high content by the Z method, it is possible to synthesize crystals without any bubbles and without affecting the hardness and TL of these colorants. Can be done.

本発明におけるアルミナ原料を用いて、長さ701ul
 、直@= 8 wxの丸棒状に成型した原料棒をFZ
装置(赤外線加熱単結晶製造装置〕の上部シャフトに吊
るし、下部シャフトに種子結晶全設置t’i: t、て
、石英ガラス管によって外気と隔離してこの中に空気を
流す。そして加熱を行ない、原料と種子の間に溶融体を
形成して、この両方を同時に一定の速度で下方に移動さ
せて種子昂晶上1c結晶を育成させる。この時の下方へ
の移動速度つまり成長速度が4.0 ma/ H以上で
は結晶の中に気泡が含まれてしまい、4.0 us/ 
H未満が望ましい。
Using the alumina raw material in the present invention, the length is 701 ul.
, straight @ = 8 wx raw material rod formed into a round rod shape is
The seed crystals are hung on the upper shaft of the device (infrared heating single crystal manufacturing device) and all the seed crystals are installed on the lower shaft.T: Isolate from the outside air with a quartz glass tube and let air flow into it.Then, heat it. , a molten body is formed between the raw material and the seeds, and both of them are simultaneously moved downward at a constant speed to grow the seed crystals.At this time, the downward movement speed, that is, the growth rate is 4. At .0 ma/H or higher, air bubbles are included in the crystal, and at 4.0 us/H, air bubbles are included in the crystal.
Less than H is desirable.

〔実施例1〕 試薬特級(純度99.9%以上)のアルミニウムインプ
ロポキシド(AA(OCH(CHsh)a)80 fを
アルミナ乳鉢に正確に杵知4する。これをアルミナ乳鉢
を用−て、できるたけ細かく粉砕し、PH2の塩酸水溶
液160匡を加え、よく攪拌してゾルにする。
[Example 1] Accurately punch 80 f of aluminum impropoxide (AA (OCH (CHsh) a) of special reagent grade (purity 99.9% or higher) in an alumina mortar. Grind it as finely as possible, add 160 square meters of an aqueous solution of PH2 hydrochloric acid, and stir well to make a sol.

さらにこのアルミナ乳鉢を恒温槽に入れ温度15℃で1
6時間放置して完全に加水分触さぜる。
Furthermore, this alumina mortar was placed in a constant temperature bath at a temperature of 15°C.
Leave it for 6 hours to completely hydrolyze it.

加水分解が完全に終了したら、このゾル状のベーマイト
(A7UOH)を白金るつ#司に移し、電気炉で110
0℃で2時間仮焼を行ない、α−アルミナを合aする。
When the hydrolysis is completely completed, this sol-like boehmite (A7UOH) is transferred to a platinum melting vessel and heated to 110°C in an electric furnace.
Calcination is performed at 0°C for 2 hours to combine α-alumina.

該アルミナ19.8F 、塩化第ニクロム(c7CZs
 ) 0.417Fをアルミナ乳鉢に秤量し、蒸留水を
20CC加えてよく混合する。蒸真水を乾煤後、該混合
物を内径10間のゴムチューブに詰め、密封して、ラバ
ープレスにて1 ton/cm”の圧力で約15分間成
形した。さらに該成形原料棒を白金線でアルミナ管の中
に吊るし、ヒーターからの汚染を防止して、箱型電気炉
を用いて、1650℃−20時間焼結を行なった。該焼
結原料棒を用いてFZ装置により、ルビー単結晶を育成
した。育成条件を以下に示す。
The alumina 19.8F, dichromium chloride (c7CZs)
) Weigh 0.417F into an alumina mortar, add 20cc of distilled water and mix well. After drying the steamed water, the mixture was packed into a rubber tube with an inner diameter of 10 mm, sealed, and molded for about 15 minutes using a rubber press at a pressure of 1 ton/cm.Furthermore, the molding raw material rod was pressed with a platinum wire. It was suspended in an alumina tube to prevent contamination from the heater, and sintered at 1650°C for 20 hours using a box-type electric furnace.The sintered raw material rod was used to produce a ruby single crystal using an FZ apparatus. The growing conditions are shown below.

成長速度:2゜0肩− 上部シャフト回転数: 45 rpm 下部シャフト回転数: 15 rpm 種子:コランダム単結晶 雰囲気:空気 流#40 A / min上記方法で育
成した結晶は、長さ40羽、径8.0藺の丸棒状で、全
体に均一に着色しており、さらにか倍の顕微鏡にお−て
も気泡が観察されない良質のルビー単結晶であった。
Growth rate: 2゜0 shoulder - Upper shaft rotation speed: 45 rpm Lower shaft rotation speed: 15 rpm Seed: Corundum single crystal Atmosphere: Air flow #40 A/min The crystals grown by the above method have a length of 40 wings and a diameter of It was a high-quality ruby single crystal with a round rod shape of 8.0 yen, uniformly colored throughout, and no bubbles observed even under a magnification microscope.

〔実施例2〕 〔実施例1〕と同様忙合成したアルミナ19.8Fと酸
化第ニクロム(Cr!Os) 0.29をアルミナ乳鉢
に正確に秤量し、ダイフロンを加えてよく混合する。以
下〔実施例1〕に従い焼Mi原料棒を作り、成長速度1
.0 g/)1以外の育成条件は〔実施例1〕に従いル
ビー単結晶の育成を行なった。
[Example 2] Alumina 19.8F and dichromium oxide (Cr!Os) 0.29%, which were synthesized in the same manner as in [Example 1], were accurately weighed into an alumina mortar, and a Diflon was added thereto and mixed well. A baked Mi raw material rod was made according to [Example 1] below, and the growth rate was 1.
.. A ruby single crystal was grown according to [Example 1] under the growth conditions other than 0 g/)1.

上記方法で育成した結晶は、長さ40羽、径8+++s
の丸棒状で、全体に均一に着色しておル、さらに加倍の
顕微鏡においても気泡が観察されない良質のルビー単結
晶であった。
The crystal grown by the above method has a length of 40 wings and a diameter of 8+++s.
It was a round rod-shaped ruby single crystal, uniformly colored throughout, and with no bubbles observed even under a high-power microscope.

〔実施例3〕 〔実施例1〕と同様に合成したアルミナ19.8?ロン
を加えてよく混合する。以下〔実施例1〕に従い焼結原
料棒を作り、育成条件は〔実施例1〕に従い、ブルーサ
ファイヤ単結晶の育成を行なりた。上記方法で育成した
結晶は、長さ40朋、径8 。
[Example 3] Alumina 19.8? synthesized in the same manner as [Example 1] Add Ron and mix well. Hereinafter, a sintered raw material rod was prepared according to [Example 1], and a blue sapphire single crystal was grown under the growth conditions according to [Example 1]. The crystal grown by the above method had a length of 40 mm and a diameter of 8 mm.

IIjの丸棒状で、全体に均一1c7i4色しておp、
さらに加倍の顕微鏡においても気泡が観察されない良質
のブルーサファイヤ単結晶であった。
IIj round bar shape, uniformly coated in 1c7i 4 colors,
Furthermore, it was a high-quality blue sapphire single crystal with no bubbles observed even under a high-power microscope.

〔効果〕〔effect〕

以上述べたように本発明によれば、融液からの単結晶育
成において、結晶の合成に必要なアルミナをゾル−ゲル
法によりアルミニウムイソプロポキシドを加水分解し、
生成したベーマイト(AJ%00H)を高温処理して合
成したアルミナを使用することによって、原料の焼結条
件、結晶の育成条件にこまかい配慮を必要としないで、
簡単に成長速度、4−0 藺/ 8未満でおるならは、
気泡のない結晶を合成することができる。この発明は、
人工宝石の生産性の面で多大の効果を有し、さらに電子
相料用の結晶合成技術に大きく貢献するものである。
As described above, according to the present invention, in growing a single crystal from a melt, alumina necessary for crystal synthesis is obtained by hydrolyzing aluminum isopropoxide using a sol-gel method.
By using alumina synthesized by high-temperature processing of the boehmite (AJ%00H) produced, there is no need to pay close attention to the sintering conditions of the raw material or the conditions for crystal growth.
If the growth rate is easily less than 4-0/8,
Bubble-free crystals can be synthesized. This invention is
This will have a significant effect on the productivity of artificial gemstones, and will also greatly contribute to crystal synthesis technology for electronic phase materials.

以 上that's all

Claims (1)

【特許請求の範囲】 (1)融液から単結晶を育成する方法において、上記、
融液の原料粉末にアルミナ(AlkzOs )を用いる
場合、該アルミナをゾル−ゲル法によってアルミニウム
イソプロポキシドをベーマイト(AA○OH)にし、こ
れを尚温で処理したものを使用することを特徴とする単
結晶育成用原料製造法。 (2)前jjU % ゾル−ゲル法による加水分解温度
が、11) u〜加℃の岬、囲であシ、加水分解[#f
1ハJがIO時間〜加時間の範囲とする特許請求の範囲
第1項に記載の単結晶育成用原料製造法。 (8)前dし、ベーマイト(A100H)の尚温処理を
空気中で1000℃〜1200℃の範囲とする特許請求
の範囲!!!1項にhじ載の単結晶育成用原料製造法。 (4)前IIt原料製造法が赤外線集光式フローティン
グゾーン法による単結晶合成用のものである特許請求の
範囲第1項記載の単結晶育成用原料製造法。 (5)該結晶化を4.0−未商の成長速度で単結晶化さ
せることを特徴とする特許請求の嵯囲第1項に記載の単
結晶育成用原料製造法。
[Claims] (1) In the method of growing a single crystal from a melt, the above-mentioned
When alumina (AlkzOs) is used as the raw material powder for the melt, the alumina is processed by converting aluminum isopropoxide into boehmite (AA○OH) by a sol-gel method and then treated at still temperature. A method for producing raw materials for single crystal growth. (2) The hydrolysis temperature by the sol-gel method is 11)
The method for producing a raw material for single crystal growth according to claim 1, wherein 1HJ is in the range of IO time to addition time. (8) The scope of the claim is that the still temperature treatment of boehmite (A100H) is carried out in the air at a temperature in the range of 1000°C to 1200°C! ! ! The method for producing raw materials for single crystal growth described in Section 1. (4) The method for producing a raw material for single crystal growth according to claim 1, wherein the former method for producing a IIt raw material is for single crystal synthesis by an infrared condensing floating zone method. (5) The method for producing a raw material for single crystal growth according to claim 1, characterized in that the crystallization is carried out at a growth rate of 4.0-min.
JP59079143A 1984-04-19 1984-04-19 Preparation of starting material for single crystal Pending JPS60226498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59079143A JPS60226498A (en) 1984-04-19 1984-04-19 Preparation of starting material for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079143A JPS60226498A (en) 1984-04-19 1984-04-19 Preparation of starting material for single crystal

Publications (1)

Publication Number Publication Date
JPS60226498A true JPS60226498A (en) 1985-11-11

Family

ID=13681737

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS60226498A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102659152A (en) * 2012-04-24 2012-09-12 上海应用技术学院 Method for preparing nanometer alumina slurry with good water dispersibility

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191299A (en) * 1981-05-20 1982-11-25 Natl Inst For Res In Inorg Mater Preparation of single crystal of corundum shedding asterism
JPS57196704A (en) * 1981-05-18 1982-12-02 Westinghouse Electric Corp Manufacture of metallic hydroxide and oxide powder for forming ceramic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196704A (en) * 1981-05-18 1982-12-02 Westinghouse Electric Corp Manufacture of metallic hydroxide and oxide powder for forming ceramic
JPS57191299A (en) * 1981-05-20 1982-11-25 Natl Inst For Res In Inorg Mater Preparation of single crystal of corundum shedding asterism

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102659152A (en) * 2012-04-24 2012-09-12 上海应用技术学院 Method for preparing nanometer alumina slurry with good water dispersibility

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