JPS6022496B2 - 粒子形光学装置を較正する方法 - Google Patents

粒子形光学装置を較正する方法

Info

Publication number
JPS6022496B2
JPS6022496B2 JP990275A JP990275A JPS6022496B2 JP S6022496 B2 JPS6022496 B2 JP S6022496B2 JP 990275 A JP990275 A JP 990275A JP 990275 A JP990275 A JP 990275A JP S6022496 B2 JPS6022496 B2 JP S6022496B2
Authority
JP
Japan
Prior art keywords
electron beam
screen
sample holder
mark
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP990275A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50105383A (US20020051482A1-20020502-M00012.png
Inventor
トロテル ジヤツク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS50105383A publication Critical patent/JPS50105383A/ja
Publication of JPS6022496B2 publication Critical patent/JPS6022496B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP990275A 1974-01-25 1975-01-24 粒子形光学装置を較正する方法 Expired JPS6022496B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7402572A FR2259383B1 (US20020051482A1-20020502-M00012.png) 1974-01-25 1974-01-25
FR7402572 1974-01-25

Publications (2)

Publication Number Publication Date
JPS50105383A JPS50105383A (US20020051482A1-20020502-M00012.png) 1975-08-20
JPS6022496B2 true JPS6022496B2 (ja) 1985-06-03

Family

ID=9134012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP990275A Expired JPS6022496B2 (ja) 1974-01-25 1975-01-24 粒子形光学装置を較正する方法

Country Status (4)

Country Link
JP (1) JPS6022496B2 (US20020051482A1-20020502-M00012.png)
DE (1) DE2502720C2 (US20020051482A1-20020502-M00012.png)
FR (1) FR2259383B1 (US20020051482A1-20020502-M00012.png)
GB (1) GB1497432A (US20020051482A1-20020502-M00012.png)

Also Published As

Publication number Publication date
FR2259383B1 (US20020051482A1-20020502-M00012.png) 1977-06-24
DE2502720C2 (de) 1986-05-28
JPS50105383A (US20020051482A1-20020502-M00012.png) 1975-08-20
GB1497432A (en) 1978-01-12
DE2502720A1 (de) 1975-07-31
FR2259383A1 (US20020051482A1-20020502-M00012.png) 1975-08-22

Similar Documents

Publication Publication Date Title
US6222195B1 (en) Charged-particle-beam exposure device and charged-particle-beam exposure method
US3875416A (en) Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
US3753034A (en) Electron beam apparatus
JPH0974060A (ja) マルチ荷電粒子ビーム露光方法及び装置
JPS6335094B2 (US20020051482A1-20020502-M00012.png)
JPH0324771B2 (US20020051482A1-20020502-M00012.png)
US6624430B2 (en) Method of measuring and calibrating inclination of electron beam in electron beam proximity exposure apparatus, and electron beam proximity exposure apparatus
JPS59124719A (ja) 電子ビ−ム露光装置
JP4186464B2 (ja) 荷電粒子ビーム走査式装置
US6605811B2 (en) Electron beam lithography system and method
US3864597A (en) Device for increasing the accuracy of addressing an electron beam striking a target
GB1559133A (en) Scaning electron device
US3857041A (en) Electron beam patterning system for use in production of semiconductor devices
JPH047087B2 (US20020051482A1-20020502-M00012.png)
JPS6022496B2 (ja) 粒子形光学装置を較正する方法
US4152599A (en) Method for positioning a workpiece relative to a scanning field or a mask in a charged-particle beam apparatus
US4095112A (en) Device for and a method of calibrating electron-optical apparatus
US4424450A (en) Hybrid moving stage and rastered electron beam lithography system employing approximate correction circuit
US4439681A (en) Charged particle beam scanning device
JP3291096B2 (ja) 電子ビーム露光装置のビーム制御方法
US4484203A (en) Method and system for registration in CRT typesetting
JP2023021705A (ja) 荷電粒子ビーム走査モジュール、荷電粒子ビーム装置およびコンピュータ
JP2000223412A (ja) 荷電粒子ビーム露光装置及び露光方法
JPH01248617A (ja) 荷電粒子ビーム露光装置
JP3802525B2 (ja) 荷電粒子顕微鏡