JPS6022380A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS6022380A JPS6022380A JP58129541A JP12954183A JPS6022380A JP S6022380 A JPS6022380 A JP S6022380A JP 58129541 A JP58129541 A JP 58129541A JP 12954183 A JP12954183 A JP 12954183A JP S6022380 A JPS6022380 A JP S6022380A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- substrate
- layer
- junction
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- 235000019592 roughness Nutrition 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 （技術分野） 本発明は効率の高い太陽電池に関するものである。[Detailed description of the invention] (Technical field) The present invention relates to highly efficient solar cells.
（従来技術）
従来の太陽電池は、例えば、第１図に示すように構成さ
れていた。すなわち、（１００）面を有するｎ −Ｇａ
Ａｓ基板ｌ上に液相エピタキシャル成長により１μｍ程
度の厚さのｐ −ＧａＡｓ層−を成長させ、その層−〇
上にｐ −Ｇａ（１−幻Ａ／ＸＡｓ ｌｌ（ｆ ３ （
ｘ＝０．７〜Ｏ０ざ）をＳＯＯ〜１０００ Ａ程度の厚
さに成長させ、更にその層３の上に電極弘および反射防
止膜ｊを形成して効率の向上を図ってきた。(Prior Art) A conventional solar cell was configured as shown in FIG. 1, for example. That is, n -Ga having the (100) plane
A p-GaAs layer with a thickness of about 1 μm is grown on the As substrate l by liquid phase epitaxial growth, and p-Ga(1-phantom A/XAs ll(f 3 (
An attempt has been made to improve efficiency by growing a layer 3 (x=0.7 to O0) to a thickness of about SOO to 1000 A, and further forming an electrode layer and an antireflection film on the layer 3.
しかし、反射防止膜Ｓといえどもすべての太陽光の波長
に対して無反射にすることができる訳ではなく、実際に
は、太陽光の反射による損失を無視し得ない。従って、
いかに素子作製技術の向上が図られようとも、反射損失
はいかんともし難く、効率の改善にも限界があった。However, even the anti-reflection film S cannot make all wavelengths of sunlight non-reflective, and in reality, losses due to reflection of sunlight cannot be ignored. Therefore,
No matter how much the device manufacturing technology was improved, reflection loss was difficult to manage, and there was a limit to the improvement of efficiency.
そこで、従来、この太陽光の太陽電池による反射損失を
減少するために、太陽電池の表面に多数の凹凸を艙底す
る方法がある（例えば、特願昭５７−３２！３号参照）
。しかし、これらの方法では、例えば所望の凹凸を形成
するのに、適当なレジストを用いてのマスキングとエツ
チング技術によるパターンニングを伴なう、いわゆる光
露光技術を用いてＶ溝やピラミッド形状の凹凸を形成す
るので、余分の工程と複雑な処理を必要とするのが問題
であった。また、この表面の凹凸形成法の７つとして、
機械的な研削法を用いて荒研磨することにより凹凸を形
成する方法もあるが、この場合、加工に伴なうダメージ
が残ってしまうことやそのダメージを取り除くためにエ
ツチング等の余分な工程を必要とするなどの問題点があ
った。Therefore, in order to reduce the reflection loss of sunlight by the solar cells, there is a conventional method of creating many unevenness on the surface of the solar cells (see, for example, Japanese Patent Application No. 32-32-1981).
. However, in these methods, for example, to form the desired unevenness, a so-called light exposure technique is used, which involves masking using an appropriate resist and patterning using an etching technique. The problem is that it requires extra steps and complicated processing. In addition, as seven methods for forming unevenness on this surface,
There is also a method of forming irregularities by rough polishing using a mechanical grinding method, but in this case, damage caused by machining may remain and extra steps such as etching are required to remove the damage. There were problems such as the need for
（目 的）
そこで、本発明の目的は、かがる限界を可及的に拡大す
るために、太陽光の太陽電池による反射損失を減少でき
るように適切に１かっ簡便な方法によシ構成した太陽電
池を提供することにある。(Purpose) Therefore, an object of the present invention is to appropriately configure a structure in a simple and simple manner so as to reduce the reflection loss of sunlight by solar cells, in order to expand the limit as much as possible. Our goal is to provide solar cells with
（発明の構成） かかる目的を達成するために１本発明では、する。(Structure of the invention) One aspect of the present invention is to achieve such an object.
すなわち、化合物半導体の（／／／）面は、その極性に
よシ、例えば■−■族化合物半導体の場合、■族元素が
最表面に存在するＡ面と、Ｖ族元素が最表面に存在する
８面とが、常に表裏の関係で成り立っている。しかも、
通常の化学的エツチングを行うと、常に、（／／／）Ａ
面はピラミッド状凹凸表面を呈する。これはｎ−■族化
合物半導体の場合も同様である。In other words, the (///) plane of a compound semiconductor depends on its polarity; for example, in the case of a ■-■ group compound semiconductor, there is an A plane in which group ■ elements exist on the outermost surface, and an A plane in which group V elements exist in the outermost surface. The eight sides are always in a front-back relationship. Moreover,
Normal chemical etching always results in (///)A
The surface exhibits a pyramidal uneven surface. This also applies to n-■ group compound semiconductors.
そこで、本発明では、簡便なエツチング処理だけで、規
則的なピラミッド状凹凸を形成した（ ／／／ ）Ａ面
基板を用いることによって、光入射面に対して望ましい
凹凸を形成することができ、太陽光の反射損失を減少で
きる太陽電池を提供できる。Therefore, in the present invention, by using a (///) A-side substrate on which regular pyramid-shaped unevenness is formed with only a simple etching process, desirable unevenness can be formed on the light incident surface. A solar cell that can reduce reflection loss of sunlight can be provided.
（実施例） 以下、図面により本発明の詳細な説明する。(Example) Hereinafter, the present invention will be explained in detail with reference to the drawings.
第２図は本発明の一実施例を示すものである。FIG. 2 shows an embodiment of the present invention.
ここで、（／／／）Ａ面を有するｐ彫工ｎＰ、ｌ結晶を
基板６として用い、この基板６をＢｒ （、’〜２％）
メタノール液によってエツチング処理して、基板乙の表
面上にピラミッド状凹凸を形成する。この凹凸表面から
、ドナー不純物としてＳを、７ｏｏ℃で３時間熱拡散し
て表面層約０゜３μｍをｎ形ＩｎＰ ）曽７とすること
により、ｎｐ接合ＩｎＰ太陽電池を得た。Here, a p-carved nP,l crystal with (///)A plane is used as the substrate 6, and this substrate 6 has Br (,'~2%)
Etching is performed using a methanol solution to form pyramid-shaped unevenness on the surface of the substrate A. An np junction InP solar cell was obtained by thermally diffusing S as a donor impurity from this uneven surface at 70° C. for 3 hours to make the surface layer approximately 0°3 μm thick as n-type InP.
池と本発明による（／／／）Ａ基板を用いた太陽電池と
のキャリアの収集効率の波長依存性を比較したものであ
る。第３図から明らかなように、曲線Ｉで示す本発明の
場合には、曲線■で示す従来のものに比べて、波長ＩＩ
ｏｏｏ〜７０００人での収集効率が大幅に改善されてい
ることがわかる。3 is a comparison of the wavelength dependence of carrier collection efficiency between a solar cell using a solar cell and a solar cell using an A substrate according to the present invention (///). As is clear from FIG. 3, in the case of the present invention shown by curve I, the wavelength II
It can be seen that the collection efficiency for ooo ~ 7000 people has been significantly improved.
さらに、第４図は本発明の他の実施例を示すものである
。ここで、ｌは（ｔｔ／） Ａ面を有するｐ形ＩｎＰ基
板、りは工ｎＰ酸化膜、ｉｏは酸化膜９の上面に配置し
たＡＪの半透明電極である。酸化膜９は、ｐＨ＝ Ｉの
ｊ％酒石酸水溶液とプロピレングリコールとの混合液を
電解液として陽極酸化し、さらに、１％■Ｃ！水溶液に
よるエツチング処理を施すことＫより、所定の厚さの工
ｎＰ酸化膜７を形成する。Furthermore, FIG. 4 shows another embodiment of the present invention. Here, 1 is a p-type InP substrate having a (tt/)A plane, 1 is an nP oxide film, and io is a translucent electrode of AJ disposed on the upper surface of the oxide film 9. The oxide film 9 is anodized using a mixed solution of j% tartaric acid aqueous solution and propylene glycol at pH=I as an electrolyte, and further, 1% ■C! By performing an etching process using an aqueous solution, a nP oxide film 7 of a predetermined thickness is formed.
このようにして作製した本発明によるＩｎＰ −ＭＩＳ
構造太＠電池と、従来法によって平坦な（ｉｏｏ ）基
板を用いて同様な方法で作製したＩｎＰ −ＭＩＳ構造
太＠電池との特性比軸を行ったところ、本発明による太
陽電池は、短絡電流密度で、従来の３θｍＡ／儒２から
３３ ｍＡ ７ｃｍ２への向上が因られ、結果として、
変換効率もまた、従来の７３％から／ｌ／、、ｊ％へ大
きく改善されることが確認された。InP-MIS according to the present invention produced in this way
When comparing the characteristics of the thick structure cell and the InP-MIS structure thick cell fabricated in a similar manner using a flat (ioo) substrate using the conventional method, it was found that the solar cell according to the present invention has a short-circuit current. The density has been improved from the conventional 3θmA/F2 to 33 mA 7cm2, and as a result,
It was also confirmed that the conversion efficiency was greatly improved from the conventional 73% to /l/,,j%.
なお、本発明は、上述した実施例にのみ限定されるもの
ではなく、基板材料としては、ＩｎＰの他に、ＧａＡｓ
、 ＧａＳｂ 、 Ｇｄ’ｒｅ 、 ＯｄＳ等種々の
半幅体材料を有効に用いることができる。Note that the present invention is not limited to the above-mentioned embodiments, and the substrate material may include GaAs in addition to InP.
Various half-width body materials such as , GaSb, Gd're, and OdS can be effectively used.
その場合に、ＧａＡｓなどのように表面再結合速度の大
きい半導体基板材料を用いるときには、ｐｎ接合を形成
する層あるいはＭ工Ｓ構造の金属層の上に窓層としてＧ
ａＡｌＡｓ層などを配置して、表面再結合を抑制するの
が好適である。In that case, when using a semiconductor substrate material with a high surface recombination rate such as GaAs, a window layer is formed on the layer forming the pn junction or the metal layer of the M-S structure.
It is preferable to suppress surface recombination by disposing an aAlAs layer or the like.
また、導電型については、ｎ形半導体の（／／／）Ａ面
を基板に用いる場合についても、本発明を同様に有効に
適用できることは言うまでもないことである。Regarding the conductivity type, it goes without saying that the present invention can be similarly effectively applied to the case where the (///) A-plane of an n-type semiconductor is used as the substrate.
（効 果）
以上に説明したように、本発明によれば、簡便なエツチ
ング処理だけで、表面にピラミッド状凹凸を形成した（
／／／）Ａ固化合物半導体基板を使用して、ｐｎ接合あ
るいはＭＩＳ構造太陽電池を作製することにより、太陽
光の反射損失を減少させることができ、以て、太陽電池
の変換効率を向上させることができる。(Effects) As explained above, according to the present invention, pyramid-shaped unevenness can be formed on the surface with only a simple etching process (
///) A By using a solid compound semiconductor substrate to create a pn junction or MIS structure solar cell, it is possible to reduce the reflection loss of sunlight, thereby improving the conversion efficiency of the solar cell. be able to.
第１図は従来の太陽電池の構成例を示す断面図、第２図
は本発明ｐｎ接合太陽電池の一実施例を示て示す図、第
４を図は本発明にＩｓ構造太陽電池の一実施例を示す断
面図である。
／ −＝ ｎ −ＧａＡ３基板、
２・・・ｐ −ＧａＡｓ層、
３−ｐ −Ｇａ（、，２Ａ７！ｏ、Ｂ Ａｓ層、グ・・
・電極、
Ｓ・・・反射防止膜、
４ 、 ｔｒ ・（／／／） Ａ面ｐ−ＩｎＰ基板、７
・・・Ｓ拡散によるｎ −ＩｎＰ層、り・・・ＩｎＰ酸
化膜、
／θ・・・Ａｌ半透明電極。
特許出願人 日本電信′電話公社
り ζ
代理人 弁理士 谷 義 −ジ、、′Ｉ辺・Ｉｌづ−
第１図
第２図
第３図
４θρθ ６θθｏ ８０００ １００００光の５皮長
（刷
第４図FIG. 1 is a sectional view showing an example of the configuration of a conventional solar cell, FIG. 2 is a cross-sectional view showing an embodiment of the pn junction solar cell of the present invention, and FIG. 4 is a cross-sectional view showing an example of the structure of a conventional solar cell. It is a sectional view showing an example. / -= n -GaA3 substrate, 2...p -GaAs layer, 3-p -Ga(,,2A7!o, B As layer, g...
・Electrode, S... antireflection film, 4, tr ・(///) A-side p-InP substrate, 7
...n-InP layer by S diffusion, Ri...InP oxide film, /θ...Al semitransparent electrode. Patent applicant Nippon Telegraph Telephone Public Corporation ζ Agent Patent attorney Yoshi Tani -ji,,'I side, Ilzu- Fig. 1 Fig. 2 Fig. 3 4θρθ 6θθo 8000 5 skin lengths of 10000 lights (Printing Fig. 4)
Claims (1)
物半導体基板を有し、該半導体基板上にｐｎ接合を形成
する層を形成して、光入射面に凹凸を形成したことを特
徴とする太陽電池。 ２、特許請求の範囲第１項記載の太陽電池において、前
記ｐｎ接合を形成する層の上に窓層を配置したことを特
徴とする太陽電池。 ３）表面に多数の凹凸を形成した（／／／）Ａ面の化合
物半導体基板を有し、該半導体基板上に、絶縁膜および
全感層をこの順序で配置して、光入射面に凹凸を形成し
たことを特徴とする太陽電池。 ４）特ａ′ｆｉｒ＃求の範囲第Ｓ項記載の太陽電池にお
いて、前記金属層の上に窓層を配置したことを特徴とす
る太陽電池。[Claims] 1) A compound semiconductor substrate having an A-side (///) surface with a large number of unevenness formed thereon, a layer forming a pn junction formed on the semiconductor substrate, and a light incident surface A solar cell characterized by having unevenness formed on the surface. 2. The solar cell according to claim 1, characterized in that a window layer is disposed on the layer forming the pn junction. 3) It has a (///) A-side compound semiconductor substrate with many unevenness formed on the surface, and an insulating film and a total sensitive layer are arranged in this order on the semiconductor substrate, so that the light incident surface is uneven. A solar cell characterized by forming. 4) The solar cell according to item S, characterized in that a window layer is disposed on the metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129541A JPS6022380A (en) | 1983-07-18 | 1983-07-18 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129541A JPS6022380A (en) | 1983-07-18 | 1983-07-18 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6022380A true JPS6022380A (en) | 1985-02-04 |
Family
ID=15012070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58129541A Pending JPS6022380A (en) | 1983-07-18 | 1983-07-18 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022380A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5261970A (en) * | 1992-04-08 | 1993-11-16 | Sverdrup Technology, Inc. | Optoelectronic and photovoltaic devices with low-reflectance surfaces |
| US9991407B1 (en) * | 2010-06-22 | 2018-06-05 | Banpil Photonics Inc. | Process for creating high efficiency photovoltaic cells |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4832946A (en) * | 1971-08-31 | 1973-05-04 | ||
| JPS5582471A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Light converter |
-
1983
- 1983-07-18 JP JP58129541A patent/JPS6022380A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4832946A (en) * | 1971-08-31 | 1973-05-04 | ||
| JPS5582471A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Light converter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5261970A (en) * | 1992-04-08 | 1993-11-16 | Sverdrup Technology, Inc. | Optoelectronic and photovoltaic devices with low-reflectance surfaces |
| US9991407B1 (en) * | 2010-06-22 | 2018-06-05 | Banpil Photonics Inc. | Process for creating high efficiency photovoltaic cells |
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