JPS60223303A - Microwave switch matrix - Google Patents
Microwave switch matrixInfo
- Publication number
- JPS60223303A JPS60223303A JP7857684A JP7857684A JPS60223303A JP S60223303 A JPS60223303 A JP S60223303A JP 7857684 A JP7857684 A JP 7857684A JP 7857684 A JP7857684 A JP 7857684A JP S60223303 A JPS60223303 A JP S60223303A
- Authority
- JP
- Japan
- Prior art keywords
- line
- input
- output
- switch matrix
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はマイクロ波スイッチマトリックス、更に詳しく
言えば複数の入力端からのマイクロ波信号全複数の出力
端へ任意の組合わせで、方向性結合器及びスイッチ増幅
器を介して出力するマイクロ波スイッチマトリックスに
関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a microwave switch matrix, more specifically, a directional coupler that connects microwave signals from a plurality of input terminals to a plurality of output terminals in any combination. and a microwave switch matrix outputting via a switch amplifier.
第1図は、スイッチマトリックスの基本的な接続に機能
図を示すもので、複数の入力信号端子1′〜1′//と
複数の出力信号端子2′〜2““と全接続するため、縦
横線路の交差点毎にクロスポイントスイッチ1’ −1
’ 、2/−2’を設けて、任意の入出力間の接続を可
能托したものである。Fig. 1 shows a functional diagram of the basic connections of the switch matrix. In order to fully connect the plurality of input signal terminals 1' to 1' // and the plurality of output signal terminals 2' to 2'', Crosspoint switch 1'-1 at each intersection of vertical and horizontal tracks
', 2/-2' are provided to enable connection between arbitrary inputs and outputs.
従来マイクロ波のスイッチマトリックスにおいては、線
路に直接スイッチを取付けると反射が生じるので、実際
の構成は、線路の反射が最小となるよう方向性結合器を
用いて入出力線路との信号の受渡しを行ない、途中に挿
入したアンプの増幅利得を切換え、0N10FI行なっ
ている。マイクロ波スイッチマトリックスは、一般に、
前記のようなりロスポイントスイッチをモジュール化し
て多数配列することによって、構成される。従って従来
のものでは、入力信号の数、出力信号の数が多くなると
、各モジュールの残留反射が累積し、装置の人、出力定
在波比が悪化するという問題点がおった。In conventional microwave switch matrices, reflections occur when switches are attached directly to the lines, so the actual configuration uses directional couplers to transfer signals between input and output lines to minimize line reflections. Then, the amplification gain of the amplifier inserted in the middle was changed to perform 0N10FI. Microwave switch matrices are generally
It is constructed by modularizing and arranging a large number of loss point switches as described above. Therefore, in the conventional device, when the number of input signals and the number of output signals increases, residual reflections from each module accumulate, resulting in a problem that the output standing wave ratio of the device deteriorates.
本発明の目的は、大規模化しても、入出力線路の定在波
比が良好な構造のマイクロ波スイッチマトリックスを提
供することを目的とする。An object of the present invention is to provide a microwave switch matrix having a structure in which the standing wave ratio of input/output lines is good even when the scale is increased.
本発明は上記目的を達成するためマイクロ波スイッチマ
トリックスが単位モジュールを周期的に配列される際、
線路長を最適化して、各モジュールに共通した固有反射
の重畳を防止するものでおる。In order to achieve the above object, the present invention has a microwave switch matrix in which unit modules are arranged periodically.
The line length is optimized to prevent the superposition of unique reflections common to each module.
以下、本発明金実施倒によって説明する。マイクロ波ス
イッチマトリックス(MSM)の単位モジュール1は、
マイクロ波集積回路(IC)の形式で構成されており、
セラミック基板2上の入力用のマイクロストリップ線路
3の途中に4分の1波長の方向性結合器4が配置され、
分岐した入力信号を利得可変の増幅器5に加える。無反
射終端6は、分岐線路の他の一端に配置し、反射波を吸
収するだめのものである。増幅器5の利得を切換えるこ
とによって、実質的に開閉された信号は、スルーホール
7から、裏面に配置されたマイクロ波ICで構成された
方向性結合器8から無反射終端9に導かれ、分岐された
出力が出力線路10に伝えられる。Hereinafter, the present invention will be explained by implementing the invention. The unit module 1 of the microwave switch matrix (MSM) is
It is constructed in the form of a microwave integrated circuit (IC),
A quarter wavelength directional coupler 4 is arranged in the middle of the input microstrip line 3 on the ceramic substrate 2,
The branched input signal is applied to a variable gain amplifier 5. The non-reflection termination 6 is disposed at the other end of the branch line and serves to absorb reflected waves. By switching the gain of the amplifier 5, the signal, which is substantially opened and closed, is guided from the through hole 7 to the directional coupler 8, which is configured with a microwave IC placed on the back side, to the non-reflection termination 9, and is branched. The generated output is transmitted to the output line 10.
入力線路3の蛇行した線路長調節部11及び出力線路1
0の線路長調節部榛12は、単位モジュール内の位相角
ヲ0.5πに取って、単位モジュールを多数組合わせた
MUM全体としての人、出力定在波比を低減させる。Meandering line length adjustment section 11 of input line 3 and output line 1
The line length adjusting section 12 of 0 sets the phase angle within the unit module to 0.5π to reduce the output standing wave ratio of the entire MUM, which is a combination of many unit modules.
次に、本発明の、単位モジュール内に線路長調節部11
.12の機能について説明する。Next, according to the present invention, the line length adjustment section 11 is installed in the unit module.
.. 12 functions will be explained.
今、nヶのモジュールが等間隔で配列された場合、入力
又は出力端の複素反射係数は次式で与え2π
β=□
λ。Now, when n modules are arranged at equal intervals, the complex reflection coefficient at the input or output end is given by the following formula: 2π β = □ λ.
ここに Fo :モジュールの固有反射系数α :1モ
ジユール尚シの減衰定数
λg:1fM路の実効波長
t :1モジユール当シの線路長
減衰定数αは、主として方向性結合器の挿入による信号
分岐の損失と、線路の長さによる損失によって決定され
る。Here, Fo: Specific reflection coefficient of the module α: Attenuation constant of 1 module λg: Effective wavelength of 1 fM path t: Line length attenuation constant α of 1 module It is determined by the loss and the loss due to the length of the line.
第X図は、本発明の実施例において、人、出方端子数が
6X6の焼模のMUMであって、1モジユール当シの片
道の減衰量が1dBの設計例において、単位モジュール
内の線路長調節部を最適化したときの効果會示す。単位
モジュール内の等側線路長またはモジュール間隔金位相
角にして横軸に取シ、反射係数の増加率JF//’of
を縦軸に示す。FIG. The effect of optimizing the length adjustment section is shown. The horizontal axis represents the isolateral line length within a unit module or the module spacing phase angle, and the increase rate of reflection coefficient JF//'of
is shown on the vertical axis.
モジュール内線路長が位相角にして、βL=π(ラジア
ン)のとき、反射係数は、単位モジュールの場合の3.
64倍、電力にして1桁以上増大し、人、出力線路の定
在波比が悪化することがわかる。When the line length within the module is expressed as a phase angle and βL=π (radians), the reflection coefficient is 3.
It can be seen that the power increases by a factor of 64, or more than one order of magnitude, and the standing wave ratio of the person and the output line deteriorates.
その反射係数の大きさは、単位モジュールの場合の0.
5倍程度に、抑えることができる。The magnitude of the reflection coefficient is 0.0 for a unit module.
It can be suppressed to about 5 times.
本発明によれば、モジュール内に線路長調節部を設ける
ことによって、人、出力線路に生じる反射量が低減でき
るので、従来の方法では必要であった反射吸収用のアイ
ソレータなどの回路部品を省略し、装置簡易化の効果が
ある。According to the present invention, by providing a line length adjustment section within the module, the amount of reflection that occurs on the output line can be reduced, so circuit components such as isolators for reflection absorption, which were necessary in conventional methods, are omitted. However, it has the effect of simplifying the equipment.
また、本発明によれば、モジュールの外形寸法は自由に
設計しても位相角を最適にできるので、装置全体を小型
化する効果がある。Further, according to the present invention, the phase angle can be optimized even if the external dimensions of the module are freely designed, which has the effect of downsizing the entire device.
第1図は、スイッチマトリックスの接続機能図、第2図
は、本発明によるスイッチマトリックスの一実施例の構
造を示す平面図、第3図は、本発明の一実施例における
反射係数増加率の測定結果?示す図である。
1′〜1”“・・・入力信号端子、2′〜2““・・・
出力信号端子、1/ s/ 、1/ 2/・・・クロス
ポイントスイッチ、3’+4’・・・無反射終端、1・
・・単位モジュール、2・・・セラミック基板、3・・
・マイクロストリップ線路、4・・・方向性結合器、5
・・・増幅器、8・・・方向性結合器、10・・・出力
線路、11.12・・・線路長調節部。
誉1凶
2・ 2・・ 2・” 2””
4fLis′f3FIG. 1 is a connection function diagram of a switch matrix, FIG. 2 is a plan view showing the structure of an embodiment of a switch matrix according to the present invention, and FIG. 3 is a diagram showing the reflection coefficient increase rate in an embodiment of the present invention. Measurement result? FIG. 1'~1""...Input signal terminal, 2'~2""...
Output signal terminal, 1/s/, 1/2/... cross point switch, 3'+4'... non-reflection termination, 1.
...Unit module, 2...Ceramic substrate, 3...
・Microstrip line, 4... Directional coupler, 5
...Amplifier, 8...Directional coupler, 10...Output line, 11.12...Line length adjustment section. Honor 1 Evil 2. 2.. 2.” 2”” 4fLis'f3
Claims (1)
と、これら交差点毎に結合器とスイッチ増幅器とを配し
て、入力出力信号を任意の組合わせで接続しうるように
したマイクロ波スイッチマトリックスにおいて、入出力
各線路の交差る反射波全相殺させるようにしたことを特
徴とするマイクロ波スイッチマトリックス。 2、特許請求の範囲第1項記載のマイクロ波スイッチマ
トリックスにおいて、上記入力信号線路及び出力信号線
路に蛇行部を設け、所望の線路長で小形化したこと金特
徴とするマイクロ波スイッチマトリックス。[Claims] 1. A plurality of output signal lines intersect with a plurality of input signal lines, and a coupler and a switch amplifier are arranged at each of these intersections, so that input and output signals can be connected in any combination. A microwave switch matrix characterized in that, in the microwave switch matrix as described above, reflected waves crossing each input and output line are completely canceled out. 2. The microwave switch matrix according to claim 1, characterized in that the input signal line and the output signal line are provided with meandering portions so as to be miniaturized with a desired line length.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7857684A JPS60223303A (en) | 1984-04-20 | 1984-04-20 | Microwave switch matrix |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7857684A JPS60223303A (en) | 1984-04-20 | 1984-04-20 | Microwave switch matrix |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60223303A true JPS60223303A (en) | 1985-11-07 |
Family
ID=13665725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7857684A Pending JPS60223303A (en) | 1984-04-20 | 1984-04-20 | Microwave switch matrix |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60223303A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001020668A2 (en) * | 1999-09-14 | 2001-03-22 | Sarnoff Corporation | AN INTEGRATED RF MxN SWITCH MATRIX |
WO2018122292A1 (en) * | 2016-12-29 | 2018-07-05 | Avl List Gmbh | Switching device for a radar target emulator and radar target emulator having said type of switching device |
US11313947B2 (en) | 2016-12-29 | 2022-04-26 | Avl List Gmbh | Method and system for simulation-assisted determination of echo points, and emulation method and emulation apparatus |
US11561298B2 (en) | 2017-10-06 | 2023-01-24 | Avl List Gmbh | Device and method for converting a radar signal, and test bench |
US11604252B2 (en) | 2016-12-29 | 2023-03-14 | Avl List Gmbh | Radar target emulator having a superimposition apparatus and method for superimposing signals |
-
1984
- 1984-04-20 JP JP7857684A patent/JPS60223303A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001020668A2 (en) * | 1999-09-14 | 2001-03-22 | Sarnoff Corporation | AN INTEGRATED RF MxN SWITCH MATRIX |
WO2001020668A3 (en) * | 1999-09-14 | 2001-10-04 | Sarnoff Corp | AN INTEGRATED RF MxN SWITCH MATRIX |
WO2018122292A1 (en) * | 2016-12-29 | 2018-07-05 | Avl List Gmbh | Switching device for a radar target emulator and radar target emulator having said type of switching device |
CN110291413A (en) * | 2016-12-29 | 2019-09-27 | Avl 里斯脱有限公司 | For the switching equipment of radar simulator and the radar simulator with such switching equipment |
JP2020514717A (en) * | 2016-12-29 | 2020-05-21 | アーファオエル・リスト・ゲーエムベーハー | Switching device for a radar target emulator and radar target emulator with such a switching device |
US11313947B2 (en) | 2016-12-29 | 2022-04-26 | Avl List Gmbh | Method and system for simulation-assisted determination of echo points, and emulation method and emulation apparatus |
US11415668B2 (en) | 2016-12-29 | 2022-08-16 | Avl List Gmbh | Switching device for a radar target emulator and radar target emulator having said type of switching device |
US11604252B2 (en) | 2016-12-29 | 2023-03-14 | Avl List Gmbh | Radar target emulator having a superimposition apparatus and method for superimposing signals |
US11561298B2 (en) | 2017-10-06 | 2023-01-24 | Avl List Gmbh | Device and method for converting a radar signal, and test bench |
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