JPS60219724A - Revolving susceptor supporting device - Google Patents
Revolving susceptor supporting deviceInfo
- Publication number
- JPS60219724A JPS60219724A JP7600784A JP7600784A JPS60219724A JP S60219724 A JPS60219724 A JP S60219724A JP 7600784 A JP7600784 A JP 7600784A JP 7600784 A JP7600784 A JP 7600784A JP S60219724 A JPS60219724 A JP S60219724A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- rotating
- substrate
- rotating susceptor
- rotary shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、集積回路製造工程で用いられる化学気相成長
装置の回転サセプタ支持装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a rotating susceptor support device for a chemical vapor deposition apparatus used in an integrated circuit manufacturing process.
従来例の構成とその問題点
従来の回転サセプタ支持においては、第１図にその具体
構成を示すように、回転サセプタ１が回転軸２にはめ込
まれており、その回転軸２が２個のころがり玉軸受３ａ
および３ｂによりケース４から支持されていた。また炉
壁６で囲まれた反応炉内部６の気密性を保証するために
ケース４をふた了で密閉し、回転軸２と一体である回転
軸８に付けられた磁石９ａと、回転サセプタ１とは別体
に設けられた駆動源の回転軸１０と一体である回転軸１
１に付けられた磁石９ｂとの間に磁気継手を構成して回
転サセプタ１を回転していた。そして１２ａ、１２ｂお
よび１２ｃはころがり玉軸受３ａおよび３ｂｉスラスト
方向に支持するカラー、１３は回転サセプタ１上の基板
を加熱する赤外線ランプ、１４は透明な石英板で、反応
ガスは矢印Ｘ方向に供給され、矢印Ｙ方向に排気されて
いた。Structure of the conventional example and its problems In the conventional rotating susceptor support, as shown in FIG. Ball bearing 3a
and 3b were supported from case 4. In addition, in order to guarantee the airtightness of the reactor interior 6 surrounded by the furnace wall 6, the case 4 is sealed with a lid, and the magnet 9a attached to the rotating shaft 8 which is integral with the rotating shaft 2, and the rotating susceptor 1 A rotating shaft 1 that is integrated with a rotating shaft 10 of a drive source provided separately from the
A magnetic joint was formed between the rotating susceptor 1 and the magnet 9b attached to the rotating susceptor 1, and the rotating susceptor 1 was rotated. 12a, 12b and 12c are collars that support the rolling ball bearings 3a and 3bi in the thrust direction, 13 is an infrared lamp that heats the substrate on the rotating susceptor 1, 14 is a transparent quartz plate, and the reaction gas is supplied in the direction of the arrow X. and was exhausted in the direction of arrow Y.
しかしながら上記のような構成では、サセプタ回転中に
ころがり玉軸受より発生する摩耗粉が反応ガスに混入し
、回転サセプタ上の基板の蒸着膜に摩耗粉が侵入しヤ膜
の均質性が損なわれるという問題があった。However, with the above configuration, abrasion particles generated from the rolling ball bearings during the rotation of the susceptor mix into the reaction gas, and the abrasion particles invade the deposited film on the substrate on the rotating susceptor, impairing the homogeneity of the film. There was a problem.
発明の目的
本発明は上記欠点に鑑み、摩耗粉の発生を解消し、蒸着
膜の均質性を保証する回転サセプタ支持装置を提供する
ものである。OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a rotating susceptor support device that eliminates the generation of abrasion powder and ensures the homogeneity of the deposited film.
発明の構成
本発明の回転サセプタ支持装置は、減圧下で化学気相成
長を行う反応炉内部の基板を載せる回転可能な回転サセ
プタと、回転サセプタをラジアル方向に支持する磁気軸
受部と、駆動源とからなり。Composition of the Invention The rotating susceptor support device of the present invention includes a rotatable rotating susceptor on which a substrate inside a reactor for chemical vapor deposition under reduced pressure is mounted, a magnetic bearing section supporting the rotating susceptor in the radial direction, and a driving source. Tokaranari.
サセプタ回転中に発生していた摩耗粉を解消して、回転
サセプタ上の基板の蒸着膜の均質性を保つことができ、
産業上きわめて有利である。By eliminating the abrasion particles generated during the rotation of the susceptor, it is possible to maintain the uniformity of the deposited film on the substrate on the rotating susceptor.
It is extremely advantageous for industry.
実施例の説明
以下に、本発明の一実施例１に第２〜３図にもとづいて
説明する。第２図は、本発明の一実施例における回転サ
セプタ支持装置の具体構成を示すものである。第２図に
おいて、１６は回転サセプタ、１６は回転サセプタ１６
と一体の回転軸であり、１７ａおよび１７ｂは磁気軸受
である。そして、１８は磁気軸受１７＆のハウジングで
、１９が磁気軸受１７ｂのハウジングである。２０は反
応炉内部で、２１は反応炉内部２ｏを外気と遮断する炉
壁、２２は反応炉内部２ｏを外気と遮断する底面部材、
そして２３は反応炉内部２０の気密性を保証するための
ふたであり、炉壁２１と底面部材２２、底面部材２２と
ハウジング１８、ハウジング１８とハウジング１９、お
よびハウジング１９とふた２３はそれぞれ既知のガスシ
ールド手段を介して締結されている。２４は回転軸１６
と一体の永久磁石、２５ｉｉ、電磁石で、電磁石２６に
通電したとき電磁石２６と永久磁石２４の間に反発力が
生じるように構成しである。２６ｉｊ：回転軸１ｅとは
別体に設けられた駆動源の回転軸、２７は回転軸２６と
一体の回転軸であり、２８ａと２８ｂはそれぞれ回転軸
１６と回転軸２７に付けられた永久磁石で、磁石２８ａ
と磁石２８ｂとの間に磁気継手を構成してサセプタ１６
を回転する。２９は回転サセプタ１６上の基板を加熱す
る赤外線ランプ、３０は透明な石英板で、反応ガスは矢
印Ｘ方向に供給され、矢印Ｙ方向に排気される。第３図
は磁気軸受１７ａと１７ｂの具体構成を示す拡大断面図
で、第３図において１６は回転サセプタと一体の回転軸
、３１はステータ、３２は励磁コイルで、３３は回転軸
１６と励磁コイル３２の間のすきまである。０１，０２
．Ｃ３，およびＣ４はコンデンサー、Ｅｌｄ交流定電圧
源である。この磁気軸受方式は、８極の励磁コイル３２
を備えたステータ３１と回転軸１６およびすきま３３よ
り構成され、４個のＲＬＣ直列共振回路が交流足電圧源
Ｅに並列に結線された自己制御型磁気軸受方式である。DESCRIPTION OF EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. 2 and 3. FIG. 2 shows a specific configuration of a rotating susceptor support device in an embodiment of the present invention. In FIG. 2, 16 is a rotating susceptor;
17a and 17b are magnetic bearings. 18 is a housing for the magnetic bearing 17&, and 19 is a housing for the magnetic bearing 17b. 20 is the inside of the reactor, 21 is a furnace wall that isolates the reactor interior 2o from the outside air, 22 is a bottom member that isolates the reactor interior 2o from the outside air,
23 is a lid for ensuring airtightness of the inside of the reactor 20, and the furnace wall 21 and the bottom member 22, the bottom member 22 and the housing 18, the housing 18 and the housing 19, and the housing 19 and the lid 23 are respectively known. They are fastened together via gas shield means. 24 is the rotating shaft 16
The permanent magnet 25ii is an electromagnet integrated with the permanent magnet 25ii, and is configured so that a repulsive force is generated between the electromagnet 26 and the permanent magnet 24 when the electromagnet 26 is energized. 26ij: a rotating shaft of a drive source provided separately from the rotating shaft 1e, 27 is a rotating shaft integrated with the rotating shaft 26, and 28a and 28b are permanent magnets attached to the rotating shaft 16 and the rotating shaft 27, respectively. So, magnet 28a
A magnetic joint is formed between the susceptor 16 and the magnet 28b.
Rotate. 29 is an infrared lamp that heats the substrate on the rotating susceptor 16, and 30 is a transparent quartz plate, through which reactive gas is supplied in the direction of arrow X and exhausted in the direction of arrow Y. FIG. 3 is an enlarged sectional view showing the specific structure of the magnetic bearings 17a and 17b. In FIG. 3, 16 is a rotating shaft integrated with a rotating susceptor, 31 is a stator, 32 is an exciting coil, and 33 is a rotating shaft 16 and an exciting coil. There is a gap between the coils 32. 01,02
．． C3 and C4 are capacitors, and Eld is an AC constant voltage source. This magnetic bearing system uses an 8-pole excitation coil 32.
This is a self-controlled magnetic bearing system in which four RLC series resonant circuits are connected in parallel to an AC leg voltage source E.
以上のように構成された回転サセプタ支持装置について
以下その動作を説明する。赤外線ランプ２９から放射さ
れる熱線で回転サセプタ１５上の基板をｒ９を定の温度
まで加熱したのち、磁気軸受１７ａおよび１７ｂの励磁
コイル３２に通電し、同時に電磁石２６にも通電する。The operation of the rotating susceptor support device configured as described above will be described below. After the substrate on the rotating susceptor 15 is heated to a certain temperature r9 by the heat rays emitted from the infrared lamp 29, the excitation coils 32 of the magnetic bearings 17a and 17b are energized, and at the same time the electromagnet 26 is energized.
このとき電磁石２５と永久磁石２４０間の反発力によっ
て回転サセプタ１６と一体の回転軸１６が浮き上がり、
そして自己制御型の磁気軸受１７ａおよび１７ｂに１′
って回転軸１６が他の部材と接触することなしにラジア
ル方向に支持される。すなわち回転軸１６が他の部材と
接触することなしに空間中に支持される。こののちに、
反応炉内部２０に反応ガスを矢印Ｘ方向に供給、矢印Ｙ
方向に排気し、同時に永久磁石２８ａおよび２８ｂで構
成される磁気継手によって駆動源からのトルクを回転軸
１６に伝達する。回転軸１６は他の部材から非接触で空
間中に支持されているため、回転に要するトルクは微少
ですみ、そして回転軸１６が回転を行っても摩耗粉が発
生しないため、基板上に生成される蒸着膜の均質性を保
証することができる。なお本実施例で用いられている磁
気軸受は、回転軸１６が偏心したとき並列に結線された
ＲＣＬ直列共振回路によって、すきま３３が減少した側
の励磁コイル３２の磁力が減少し、すきま３３が増加し
た側の励磁コイル３２の磁力が増加して、回転軸１６の
偏心を自動的に修正する機能を有するものである。At this time, due to the repulsive force between the electromagnet 25 and the permanent magnet 240, the rotating shaft 16 that is integrated with the rotating susceptor 16 is lifted up.
and 1' to self-regulating magnetic bearings 17a and 17b.
Thus, the rotating shaft 16 is supported in the radial direction without contacting other members. That is, the rotating shaft 16 is supported in space without contacting other members. After this,
Reactant gas is supplied into the reactor interior 20 in the direction of arrow X, arrow Y
At the same time, the torque from the drive source is transmitted to the rotating shaft 16 by a magnetic coupling made up of permanent magnets 28a and 28b. Since the rotating shaft 16 is supported in space without contacting other members, the torque required for rotation is very small, and even when the rotating shaft 16 rotates, wear particles are not generated, so no wear particles are generated on the substrate. The homogeneity of the deposited film can be guaranteed. In the magnetic bearing used in this embodiment, when the rotating shaft 16 is eccentric, the magnetic force of the excitation coil 32 on the side where the clearance 33 is reduced is reduced by the RCL series resonant circuit connected in parallel, and the clearance 33 is reduced. The magnetic force of the excitation coil 32 on the increased side increases and has a function of automatically correcting the eccentricity of the rotating shaft 16.
基板の着脱は、まず電磁石２６の通電を止めたのち、磁
気軸受１７ａおよび１７ｂの通電を止めてから行う。こ
のとき、回転軸１６け一体の永久磁石２４の磁力によっ
て、通電されていない電磁石２６に吸着し、基板着脱時
に回転サセプタ１６に多少の外力が加わっても、回転軸
１６がふた２３や磁気軸受１７ａおよび１７ｂ、ハウジ
ング１８および１９、底面部材２２と衝突を起こすこと
はない。Attachment and removal of the board is performed after first turning off the electromagnet 26 and then turning off the magnetic bearings 17a and 17b. At this time, the magnetic force of the permanent magnet 24 integrated with the rotary shaft 16 attracts the non-energized electromagnet 26, and even if some external force is applied to the rotary susceptor 16 when attaching or removing the board, the rotary shaft 16 is attached to the lid 23 or the magnetic bearing. 17a and 17b, the housings 18 and 19, and the bottom member 22 will not collide.
なお、本実施例において回転軸１６のスラスト方向の支
持は永久磁石２４と電磁石２５の反発力によって行った
が、電磁石２６を永久磁石として永久磁石どうしの反発
力によってスラスト方向の支持を行ってもよい。また永
久磁石２４を電磁石として電磁石どうしの反発力によっ
てスラスト方向の支持を行ってもよい。また、スラスト
方向の支持を磁石の反発力を利用せずにスラスト型静圧
軸受を利用して行ってもよい。In this embodiment, the rotating shaft 16 is supported in the thrust direction by the repulsive force between the permanent magnet 24 and the electromagnet 25, but it is also possible to use the electromagnet 26 as a permanent magnet and support the rotating shaft 16 in the thrust direction by the repulsive force between the permanent magnets. good. Alternatively, the permanent magnet 24 may be an electromagnet, and support in the thrust direction may be achieved by the repulsive force between the electromagnets. Further, support in the thrust direction may be performed using a thrust type hydrostatic bearing without using the repulsive force of the magnet.
また、本実施例において磁気軸受１７ａおよび１７ｂの
励磁コイル３２を８極としたが、励磁コイル３２１に８
極より多くしても少くしてもよいことは言う１でもない
。Further, in this embodiment, the excitation coils 32 of the magnetic bearings 17a and 17b are made of 8 poles, but the excitation coil 321 has 8 poles.
There is no point in saying that it is okay to have more or less than the pole.
発明の効果
以上のように本発明では、回転サセプタ支持を、ころが
り玉軸受による支持から、磁気軸受による、 ９シ・ア
１し。Effects of the Invention As described above, in the present invention, the rotating susceptor is supported by a magnetic bearing instead of a rolling ball bearing.
チ手−す子方向の支持と磁石の反発力によるスラスト方
向の支持とすることＫより、回転サセプタの回転中に発
生していた摩耗粉を解消して基板に生成する蒸着膜の均
質性を保証することができる。By providing support in the hand-shaft direction and support in the thrust direction by the repulsive force of the magnet, the abrasion powder generated during rotation of the rotating susceptor can be eliminated and the homogeneity of the deposited film formed on the substrate can be improved. can be guaranteed.
また、回転サセプタのスラスト方向の支持を行うための
磁石の一方を電磁石とすることにより、基板着脱時に回
転サセプタに多少の外力が加わっても、回転サセプタの
回転軸が軸受部と衝突することを阻止できる。そして、
回転サセプタを回転させるために要するトルクを低減す
ることができる。In addition, by using an electromagnet as one of the magnets for supporting the rotating susceptor in the thrust direction, even if some external force is applied to the rotating susceptor when attaching or removing the board, the rotating shaft of the rotating susceptor will not collide with the bearing part. It can be prevented. and,
The torque required to rotate the rotating susceptor can be reduced.
第１図は従来の回転サセプタ支持装置を示す断面図、第
２図は本発明の一実施例における回転サセプタ支持装置
を示す断面図、第３図は本発明の一実施例に用いた自己
制御型磁気軸受の拡大断面図である。
１．１６・・・・・・回転サセプタ、２．１８・・・・
・・回転サセプタと一体の回転軸、３ａ、３ｂ・・・・
・ころがり玉軸受、１７ａ、１７ｂ・・・・・・磁気軸
受、２６・・・・・・電磁石、９ａ 、９ｂ 、２４．
２８ａ 、２８ｂ、、。
・・永久磁石、１０．２６・・・・・・駆動源の回転軸
。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
３
第２２ｍ
ｆ！！３図
３FIG. 1 is a sectional view showing a conventional rotating susceptor support device, FIG. 2 is a sectional view showing a rotating susceptor supporting device in an embodiment of the present invention, and FIG. 3 is a self-controlling device used in an embodiment of the present invention. FIG. 3 is an enlarged cross-sectional view of a type magnetic bearing. 1.16...Rotating susceptor, 2.18...
・Rotating shaft integrated with rotating susceptor, 3a, 3b...
- Rolling ball bearing, 17a, 17b...Magnetic bearing, 26...Electromagnet, 9a, 9b, 24.
28a, 28b,... ...Permanent magnet, 10.26...Rotating shaft of drive source. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 22nd m f! ! 3Figure 3
Claims (2)
載せる回転可能な回転サセプタと、回転サセプタをラジ
アル方向に支持する磁気軸受部と、駆動源とからなる回
転サセプタ支持装置。(1) A rotating susceptor support device consisting of a rotatable rotating susceptor on which a substrate is placed inside a reactor for chemical vapor deposition under reduced pressure, a magnetic bearing section supporting the rotating susceptor in the radial direction, and a drive source.
体の磁石との間の反発力によって、回転サセプタをスラ
スト方向に支持する特許請求の範囲第（１）項記載の回
転サセプタ支持装置。(2) The rotating susceptor support device according to claim (1), wherein the rotating susceptor is supported in the thrust direction by a repulsive force between a magnet integrated with the rotating susceptor and a magnet separate from the rotating susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7600784A JPS60219724A (en) | 1984-04-16 | 1984-04-16 | Revolving susceptor supporting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7600784A JPS60219724A (en) | 1984-04-16 | 1984-04-16 | Revolving susceptor supporting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60219724A true JPS60219724A (en) | 1985-11-02 |
Family
ID=13592751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7600784A Pending JPS60219724A (en) | 1984-04-16 | 1984-04-16 | Revolving susceptor supporting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219724A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855843A (en) * | 1986-12-19 | 1996-02-27 | Applied Materials Inc | Semiconductor processing reactor |
| US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| JP2000515331A (en) * | 1997-05-16 | 2000-11-14 | アプライド マテリアルズ インコーポレイテッド | Magnetically levitated rotary device for RTP chamber |
| JP2001308012A (en) * | 2000-04-20 | 2001-11-02 | Tokyo Electron Ltd | Equipment and method for heat treatment |
| DE4428992B4 (en) * | 1993-08-16 | 2009-09-10 | Ebara Corp. | CVD coating apparatus and its use |
-
1984
- 1984-04-16 JP JP7600784A patent/JPS60219724A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855843A (en) * | 1986-12-19 | 1996-02-27 | Applied Materials Inc | Semiconductor processing reactor |
| US6167834B1 (en) | 1986-12-19 | 2001-01-02 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| US5902407A (en) * | 1987-03-31 | 1999-05-11 | Deboer; Wiebe B. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| DE4428992B4 (en) * | 1993-08-16 | 2009-09-10 | Ebara Corp. | CVD coating apparatus and its use |
| JP2000515331A (en) * | 1997-05-16 | 2000-11-14 | アプライド マテリアルズ インコーポレイテッド | Magnetically levitated rotary device for RTP chamber |
| JP2001308012A (en) * | 2000-04-20 | 2001-11-02 | Tokyo Electron Ltd | Equipment and method for heat treatment |
| JP4605853B2 (en) * | 2000-04-20 | 2011-01-05 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment system, and heat treatment method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2233707C (en) | Integrated magnetic levitation and rotation system | |
| US6181040B1 (en) | Magnetically journalled rotational arrangement | |
| JP5162670B2 (en) | Substrate rotation swing device for rapid thermal processing | |
| JP2001524259A (en) | Programmable ultra-clean electromagnetic substrate rotating apparatus and method for microelectronics manufacturing equipment | |
| JPS60219724A (en) | Revolving susceptor supporting device | |
| JP2001112223A (en) | Vacuum motor and carrier device | |
| JPH0131933B2 (en) | ||
| US5203981A (en) | Vacuum-treatment apparatus | |
| JPH09118980A (en) | Magnetron unit for sputtering apparatus and sputtering apparatus | |
| JP2003179040A (en) | Heat treatment apparatus | |
| JP4049531B2 (en) | Magnetic bearing motor and excimer laser device | |
| JP2000268995A (en) | Plasma processing device | |
| JPH03150041A (en) | Enclosed actuator | |
| JP3916851B2 (en) | Substrate processing equipment | |
| JPH0732956Y2 (en) | Turbo molecular pump | |
| JPS60189219A (en) | Sustainer of rotary susceptor | |
| WO2001099257A1 (en) | Gas bearing rotation assemblies for substrate processing systems | |
| JPH058674Y2 (en) | ||
| JP2000133860A (en) | Gas circulator, and laser oscillator | |
| KR20010039984A (en) | Excimer laser apparatus | |
| KR20010071142A (en) | Substrate processing method and apparatus | |
| JPH0424916A (en) | Film forming apparatus for semiconductor wafer | |
| JP2004299808A (en) | Transport device | |
| JPS61208223A (en) | Method and apparatus for plasma treatment | |
| JPH0621009A (en) | Plasma processor |