JPS60218475A - Manufacture of chemically deposited film - Google Patents
Manufacture of chemically deposited filmInfo
- Publication number
- JPS60218475A JPS60218475A JP59073439A JP7343984A JPS60218475A JP S60218475 A JPS60218475 A JP S60218475A JP 59073439 A JP59073439 A JP 59073439A JP 7343984 A JP7343984 A JP 7343984A JP S60218475 A JPS60218475 A JP S60218475A
- Authority
- JP
- Japan
- Prior art keywords
- aqueous
- soln
- film
- substrate
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の属する分野の説明
本発明は化学析出膜、例えばフTクシミ’)用の光セン
サに使用する光導電性膜の化学析出法による製造方法に
関するものである・
(2) 従来の技術の説明
従来のこの種の光導電性膜、例えば硫化カドミウム(C
dS)あるいはセレン化カドミウム(Cd8e)の形成
方法には真空蒸着法や印刷法などがあるが、一方前記方
法に比較して化学析出法は広い面積にわたって均一でし
かも密着性のよい析出膜を形成できるなどの利点を有す
るためにファクシミリ用の長尺の光センサの形成方法な
どに近年広く利用されてきている。DETAILED DESCRIPTION OF THE INVENTION (1) Description of the field to which the invention pertains The present invention relates to a method for producing a photoconductive film for use in an optical sensor using a chemically deposited film, such as a photoconductive film using a chemical deposition method. (2) Description of conventional technology Conventional photoconductive films of this type, such as cadmium sulfide (C
There are vacuum deposition methods and printing methods for forming cadmium selenide (Cd8e), but compared to the above methods, chemical deposition methods form a deposited film that is uniform over a wide area and has good adhesion. In recent years, it has been widely used as a method for forming elongated optical sensors for facsimile machines due to its advantages such as:
ここで化学析出法についてCd8の析出を例によって説
明すると、CdC/、などのカドミウム塩の水溶液にア
ンモニア水溶液を加え(Cd(NHs ) 4 )”+
水溶液とし、さらにチオ尿素などのように分解してイオ
ウイオンを発生する化学物を加えた混合溶液を作る。こ
の溶液中にガラス、セラミックスなどの基板を浸漬し、
溶液全体を加熱攪拌する。溶液温度が上昇するに従って
イオウを含む化合物が分解して生じたイオウイオンがカ
ドミウムイオンと反応し、Cd8として前記基板上に析
出する。所定の温度で、光導電膜として充分な厚さの析
出膜が得られるのに必要な時間だけ析出を続けることに
よfi Cd8析出膜を得る。Here, to explain the precipitation of Cd8 using an example of the chemical precipitation method, an ammonia aqueous solution is added to an aqueous solution of a cadmium salt such as CdC/, (Cd(NHs) 4 )"+
A mixed solution is made by making an aqueous solution and adding a chemical such as thiourea that decomposes to generate sulfur ions. Substrates such as glass and ceramics are immersed in this solution.
Heat and stir the entire solution. As the solution temperature rises, sulfur-containing compounds decompose and generated sulfur ions react with cadmium ions and precipitate on the substrate as Cd8. A fi Cd8 precipitated film is obtained by continuing the deposition at a predetermined temperature for a time necessary to obtain a precipitated film of sufficient thickness as a photoconductive film.
しかし前述したような方法だと光導電膜として必要な0
.3〜0.5μmのCdS析出膜を形成させるのに1〜
2時間も析出を行なわなければならず、また長時間析出
することによル基板に不要なCd8粒子が多量に付着し
、このため析出膜の厚さや膜質が不均一となるなどの欠
点があった0
(3) 発明の目的
本発明はこれらの欠点を解決するためカドミウムを含む
水溶液をあらかじめ80℃以上に加熱しておき、この溶
液にイオウ(あるいはセレン)を含む水溶液を加えるこ
とを特徴とし、その目的は析出膜の形成時間を従来の約
1/2とし、しかも析出膜の均一性を高めることにある
。However, with the method described above, the amount of 0 required for the photoconductive film is
.. 1 to 1 to form a CdS precipitated film of 3 to 0.5 μm.
Deposition has to be carried out for as long as 2 hours, and long-term deposition also causes a large amount of unnecessary Cd8 particles to adhere to the substrate, resulting in non-uniformity in the thickness and quality of the deposited film. (3) Purpose of the Invention In order to solve these drawbacks, the present invention is characterized in that an aqueous solution containing cadmium is heated to 80°C or higher in advance, and an aqueous solution containing sulfur (or selenium) is added to this solution. The purpose of this method is to reduce the time required to form a precipitated film to about half that of the conventional method, and to improve the uniformity of the precipitated film.
(4)発明の構成および作用の説明
本発明の実施例をCd8の析出を例をとって説明すると
、CdC/、の水溶液とアンモニア水溶液金反応槽に加
え、この反応槽をあらかじめ80°C以上の所定の温度
で一定させておいた恒温浴槽内に設置する。次にガラス
あるいはセラミックスの基板を反応槽内に浸漬し、溶液
をマグネチックスターラあるいはモータに接続された攪
拌器などで攪拌する。反応槽内の溶液の液温がさきに設
定しておいた80°C以上の所定の温度に達したら、イ
オウを含む水溶液を反応槽中に加え、溶液の液温をその
温度に保つか、あいはさらに温度を上げながら、Cd8
析出膜が必要な厚さになるまで30分〜1時間析出を続
ける。(4) Description of structure and operation of the invention To explain an embodiment of the present invention by taking the precipitation of Cd8 as an example, an aqueous solution of CdC/, and an aqueous ammonia solution are added to a gold reaction tank, and the reaction tank is heated to a temperature of 80°C or higher in advance. Place it in a thermostatic bathtub that is kept at a constant temperature. Next, a glass or ceramic substrate is immersed in a reaction tank, and the solution is stirred using a magnetic stirrer or a stirrer connected to a motor. When the temperature of the solution in the reaction tank reaches the predetermined temperature of 80°C or higher that was set earlier, add an aqueous solution containing sulfur to the reaction tank and keep the temperature of the solution at that temperature, or While increasing the temperature further, Cd8
The deposition is continued for 30 minutes to 1 hour until the deposited film has the required thickness.
析出が終ったら基板を溶液中よシ引き上げ、不要なCd
8粒子を水洗によシ取除き、乾燥する。When the deposition is finished, pull the substrate out of the solution and remove unnecessary Cd.
8 particles are removed by washing with water and dried.
このようにして形成されたCd8析出膜は基板への不要
なCdS粒子の付着が少いため従来の方法で形成された
CdS析出膜よりも均一性がよい。The Cd8 precipitated film formed in this manner has better uniformity than the CdS precipitated film formed by the conventional method because less unnecessary CdS particles adhere to the substrate.
(5)効果の説明
以上説明によシ明らかなように本発明によれば従来方法
で析出を行うのに比較して、光導電膜として必要な厚さ
の析出膜を得るための析出時間が約1/2に短縮出来る
。さらに従来方法よシも析出時間が短いため、基板表面
への不要な析出粒子の付着によって析出膜が不均一にな
ることがなく、均一な析出膜を得ることができる大きな
利点を有する。(5) Description of Effects As is clear from the above explanation, according to the present invention, the deposition time required to obtain a deposited film of the required thickness as a photoconductive film is longer than when deposited using a conventional method. It can be shortened to about 1/2. Furthermore, since the deposition time is shorter than in the conventional method, the deposited film does not become non-uniform due to attachment of unnecessary deposited particles to the substrate surface, and has the great advantage that a uniform deposited film can be obtained.
Claims (1)
溶液を加えて硫化カドミウムまたはセレン化カドミウム
の析出膜を形成する化学析出法において、カドミウムを
含む水溶液を加熱して液温を80°C以上の所定の温度
で一定させた彼にイオウまたはセレンを含む水溶液を加
えることを特徴とする化学析出膜の製造方法。In a chemical precipitation method in which an aqueous solution containing sulfur or selenium is added to an aqueous solution containing cadmium to form a precipitated film of cadmium sulfide or cadmium selenide, the aqueous solution containing cadmium is heated to a predetermined temperature of 80°C or higher. A method for producing a chemically deposited film, characterized in that an aqueous solution containing sulfur or selenium is added at a constant temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59073439A JPS60218475A (en) | 1984-04-12 | 1984-04-12 | Manufacture of chemically deposited film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59073439A JPS60218475A (en) | 1984-04-12 | 1984-04-12 | Manufacture of chemically deposited film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60218475A true JPS60218475A (en) | 1985-11-01 |
Family
ID=13518272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59073439A Pending JPS60218475A (en) | 1984-04-12 | 1984-04-12 | Manufacture of chemically deposited film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60218475A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005031035A2 (en) * | 2003-09-26 | 2005-04-07 | E. I. Du Pont De Nemours And Company | Method for producing thin semiconductor films by deposition from solution |
-
1984
- 1984-04-12 JP JP59073439A patent/JPS60218475A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005031035A2 (en) * | 2003-09-26 | 2005-04-07 | E. I. Du Pont De Nemours And Company | Method for producing thin semiconductor films by deposition from solution |
WO2005031035A3 (en) * | 2003-09-26 | 2005-06-30 | Du Pont | Method for producing thin semiconductor films by deposition from solution |
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