JPS60218468A - Film forming apparatus - Google Patents

Abstract

PURPOSE:To increase the metallizing efficiency and to form a uniform metallized film at high velocity in a metallized film forming apparatus by deviating the flow of ionized metallizing granules to the direction of a metallizing substrate with a control device due to a positive plate. CONSTITUTION:A metallizing substance 2 incorporated in a crucible 1 is heated and evaporated with the electron beam due to the surrounding filaments 3 and ejected from an upper opening 5 of the crucible 1. After the metallizing granule flow 6 is ionized to positive electric potential with thermions discharging from the filaments 8 of an ionizing part 7, it is received with electric attraction force by means of the positive plates 20, 21 arranged at the upper part sides to change the direction of the ejection flow to 26 from 6 and metallized on a substrate 13 attached to a holder 12. Since the flow of metallizing granules is undiffused and focused to the direction of substrate 13, the metallizing is performed without loss and the uniform metallized film is effectively formed at high velocity.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a film forming apparatus, and particularly to a film forming apparatus that forms a film by ionizing the vapor of a deposition substance, accelerating it by an electric field, and causing it to trap and impinge on the surface of a substrate. The present invention relates to a film forming device.

[Background of the invention]

One of the techniques for forming a film on the surface of a substrate made of metal, insulator, or semiconductor material in vacuum is to ionize the vapor of the deposition material, accelerate it using an electric field, and bombard it with high energy onto the substrate surface. There is an ion blating method in which a film is formed by Conventionally, as a film forming apparatus using the ion blating method, an apparatus as shown in FIG. 1, for example, is known.

In FIG. 1, reference numeral 1 denotes a crucible, into which a deposited substance 2 such as a metal, semiconductor, or insulator is placed. An opening 5 is provided in the upper part of the crucible 1 through which the vapor-deposited material is radiated and ejected together with the vapor flow. The crucible 1 is surrounded by a power source 4 with a filament 5, for example an electron beam heater. With this power supply 4.

The vapor deposition substance 2 in the crucible 1 is heated and melted, and radiates and jets out from the opening 5 of the crucible 1 as a vapor stream. An ionization section 7 comprising an ionization filament 8 is arranged above the opening 5 of the crucible 1 . The ionization section 7 uses accelerated electrons.

This ionizes the particles of the vapor stream ejected from the crucible opening 5. 9.10 is a power supply for the ionization section 7 and the ionization filament B.

Reference numeral 15 denotes a substrate to which ionized vapor deposition particles 6 are deposited to form a film, and is supported by a substrate holder 12 . The substrate 15 and the substrate holder 12 are grounded across the power source 11, and are relatively negatively biased.

The area shown in FIG. 1 except for each power source section is kept in a high vacuum atmosphere which is generally evacuated to 10-K or less by a vacuum chamber (not shown) or the like.

In such an apparatus, two evaporated substances in a crucible 1 are heated and vaporized. Next, the vaporized deposition material is ionized in the ionization section 7.

That is, the hot electrons emitted from the ionization filament 8 by the ionization power sources 9 and 10 are accelerated in one direction, and on the way, they collide with the vapor deposition material 2 and are ionized.

The ionized particles 6 are attracted to the substrate 15 and adhere to the substrate 15 while being accelerated to form a film. The vapor deposition source shown here is a so-called point vapor deposition source, and the vapor flow density is Lambert (Lam1
The COS law of y@rt) holds true. That is, the vapor flow density φ(α) at an angle α with respect to the axis of symmetry 14 is expressed by the following equation.

φ(α)=Φ, cos″α・・・・・・・・・・・・
・(1) Here, Φ0 is the vapor flow density on the axis of symmetry 14,
is an index that changes depending on, for example, the shape of the hole 5 in the crucible 1. Therefore, the film thickness distribution 15 on the substrate 15 is expressed by the following equation.

d, = dOCO5″+”α , , , , , , 0
610. (2) Here, do is the film thickness on the axis of symmetry 14. From these, the relative film thickness deviation and evaporation efficiency (the amount of adhesion to the substrate Mm relative to the total evaporation amount is 1: (tt+5)α2 ・・・・・・・・・・・・(5
1d, s le +12 ri WL ta -111 α ・・・・・・・・・・・・
(4) Therefore, when Le = 1 and the relative film thickness deviation on the substrate is 5%, α kiss is 5° from equation (5), and the vapor deposition efficiency at this time is 0.02, and the evaporated material The problem was that only 2% of the total amount contributed to vapor deposition.

Furthermore, as the area of the substrate becomes larger, the distance between the crucible 1 and the substrate 150 must be increased in order to maintain the above-mentioned relative film thickness deviation.

There were problems such as the vacuum chamber becoming large.

[Purpose of the invention]

The purpose of the present invention is to provide a film forming apparatus that is capable of forming a uniform film at high speed by increasing the vapor deposition efficiency, and that can cope with an increase in the area of a substrate without increasing the size of the apparatus. I have a lot to offer.

[Summary of the invention]

In order to achieve the above object, the present invention controls the movement direction of the ionized particles by disposing an ionized particle control section surrounding the ionized particles so that the vaporized deposition material does not diffuse after ionization. A film forming apparatus is provided.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. Note that the same reference numerals are given to the same reference numerals in each drawing.

FIG. 2 is a configuration diagram showing an example of a film forming apparatus according to the present invention. 1 is a crucible in which a deposited substance 2 such as a metal, semiconductor, or insulator is contained. An opening 5 is provided at the top of the crucible 1. This opening 5 is for the vapor deposition material 2 to radiate/spout as a vapor flow.

The crucible 1 is surrounded by a filament 5 equipped with a power source 4, for example for electron beam heating.

Note that the means for heating the vapor deposition material 2 is not limited to this, and may be, for example, a resistance heating means.

The heated and vaporized deposition material radiates and jets out from the opening of the crucible 1 as a vapor stream. An ionization section 7 comprising an ionization filament 8 is arranged above the opening 5 of the crucible 1 .

9.10 is a power supply for the ionization section 7 and the ionization filament 8. The particles of the vapor flow that have reached the ionization section 7 collide with thermionic electrons emitted from the ionization filament 8 and are ionized.

Above the ionization section 7a, anode plates 20 and 21 for controlling the direction of movement of the ionized particles are arranged so as to surround the ionized particles. These anode plates 20 and 21 are rotatably supported around support points 22 and 25 so that the movement direction of the ionized particles can be finely controlled within a required range, and are connected to power sources 21 and 25. Above the anode plates 20 and 21, a substrate 15 is supported by a substrate holder 12 at a position facing and substantially perpendicular to the direction of movement of the ionized particles.

Note that the substrate 15 and the substrate holder 12 are grounded across the power supply 11 and are relatively negatively biased.

In this configuration, the vapor flow 6 ejected from the opening 5 of the crucible 1 is positively ionized in the ionization section 7. When the ionized particles reach the range of the anode plates 20 and 21, they receive electrical repulsion and are deflected toward the substrate side relative to the conventional vapor flow 6 as shown in the figure, creating a Wf-specific vapor flow 26. At this time, by changing the inclination of the anode plates 20 and 21 around the support points 22 and 25 and controlling the voltage of the power sources 24 and 25,
The amount of direction change of this steam flow 6 is controlled.

In this way, by increasing the efficiency of vapor deposition of the vapor deposition substance onto the substrate 15, the vapor deposition rate can be increased, and the film thickness uniformity 27 can be optimally controlled.

In FIG. 2, an anode plate is used to control the direction of movement of the ionized particles, but the configuration for controlling the ionized particles is not limited to this.

FIG. 5 shows an electromagnet 50 for forming a magnetic field in place of this anode plate. '51 is used. 52°55 is a power supply.

The ionized vapor flow 6 is subjected to a force by the magnetic field 55 in the direction shown in the figure, increasing the amount of incident on the substrate, increasing the deposition efficiency, increasing the deposition rate, and electromagnetic.

A uniform film thickness 56 can be obtained by optimally adjusting the inclinations of the stones 50 and 51.

FIG. 4 shows a combination of the anode plate and the electromagnet, 40 and 41 are electromagnets, 42 and 45 are their power sources, and 4
4.45 is the anode plate, and 41.47 is its power source.

As in each of the above cases, the ionized vapor flow 6 is connected to an electromagnet 40,
41 and anode plates 44, 45, but by optimally adjusting the voltages of power supplies 42, 45, 46, 47 and the inclinations of electromagnets 40, 41 and anode plates 44, 45, the vapor deposition efficiency is higher. Therefore, the film formation rate is high and a uniform film thickness 49 can be obtained.

Incidentally, in the above description, the vapor deposition material 2 in the crucible 1 is heated and the steam ejected from the opening 5 is simply referred to as the vapor flow 6. but.

This includes cases where the vapor flow is in the molecular or atomic 60 state as shown in Figure 5, and cases where the vapor flow is in the so-called cluster 61 state where hundreds to thousands of atoms gather as shown in Figure 6. There are cases.

These generation conditions are DS nozzle size, LS nozzle thickness, PoI internal pressure pressure, P head atmosphere pressure, λI)'(
Let the mean free path of a vapor atom in IK be.

is the vapor flow in the atomic state and the vapor flow in the Rusk state. In both cases, a film is formed by applying electrons 62 from the outside to ionize atomic values or clusters, electrically accelerating them, and controlling the incident kinetic energy to the substrate. A film with strong adhesion strength and good crystallinity can be produced. It goes without saying that the film forming apparatus shown in FIGS. 2 to 4 can be applied to both of these.

〔Effect of the invention〕

According to the invention, there is provided an ionized particle control unit for controlling the direction of movement of particles of an ionized vapor stream.

Because it was arranged so as to surround the ionized particles.

The vapor deposition efficiency is high, so the film formation rate is high, and a film with uniform thickness can be formed. Furthermore, since the uniformity of the film thickness can be controlled, it is possible to cope with an increase in the area of the substrate without increasing the distance between the substrate and the crucible, so there is no need to increase the size of the vacuum chamber. There are effects such as 0

[Brief explanation of the drawing]

Figure 1 is a block diagram showing the outline of a conventional film forming apparatus, Figure 2
5 is a block diagram showing an outline of a film forming apparatus according to an embodiment of the present invention. FIGS. 5 and 4 are block diagrams showing an outline of a film forming apparatus according to another embodiment of the present invention. Figures and Figure 6. FIG. 3 is an explanatory diagram showing the form of a vapor deposition flow in the film forming apparatus according to the present invention. 1... Crucible, 2... Evaporated substance, 5... Filament. 5... Opening part, 6... Vapor deposition flow, 7... Ionization part, 8... Ionized filament %12... Substrate holder, 15... Substrate, 2o, +, 44.45...・
Anode plate, 50, 51, 40°41...Electromagnet, 60
...molecule or atom, 61...cluster. Representative Patent Attorney Akio Takahashi No. 10 4 Figure 2 40 No. 5

Claims (1)

[Claims] 1. A crucible having an opening at the top and into which a vapor deposition material is placed, and crucible heating for heating and melting the vapor deposition material in the crucible and radiating and spouting it as a vapor stream from the opening of the crucible. part and by accelerated electrons. an ionization section that ionizes the particles of the vapor flow ejected from the crucible; and ionization particles arranged above the ionization section so as to surround the ionized vapor flow particles and that control the direction of motion of the ionization particles. a control unit;
A film forming apparatus comprising a substrate holder that supports a substrate on which ionized particles are deposited. 2. The film forming apparatus according to claim 1, wherein the ionized particle control section is constituted by a positive electrode plate equipped with a power supply section. 3. The film forming apparatus according to claim 1, wherein the ionized particle control section is constituted by an electromagnet equipped with a power supply section. 4. The film forming apparatus according to claim 1, wherein the ionized particle control section is constituted by a combination of a positive electrode plate and an electromagnet each having a power supply section. 5. The film forming apparatus according to any one of claims 1 to 4, wherein the ionized vapor stream ejected from the opening of the crucible is in an atomic or molecular state. 6. The film forming apparatus according to claims 1 to 4, wherein the ionized vapor flow ejected from the opening of the crucible is in a cluster state.