JPS60217687A - Light-emitting electronic device - Google Patents

Abstract

PURPOSE:To prevent the generation of a defective short circuit by obviating a movement and an adhesion to a P-N junction section of a conductive foreign matter by coating a surface section except the end surface of a resonator in a laser chip fixed to a support board with an insulating undercoat resin. CONSTITUTION:With a laser chip 1, a surface section except the end surface 5 of a resonator emitting laser beams 8 is coated with an undercoat resin 15. The undercoat resin 15 is attached adjoined to the end surface 5 of the resonator as much as possible, and considered so as to coat a P-N junction section exposed to the circumferential surface of the laser chip 1 as much as possible. A resist such as a photo-resist is applied to the end surface 5 section of the resonator in the laser chip 1 first, and dried, the undercoat resin 15 is applied automatically by a dispenser, etc., and the photo-resist is washed and removed by an organic solvent. Accordingly, a conductive foreign matter 6 is not in contact with most sections of the P-N junction even when the foreign matter 6 comes flying and adheres to the laser chip 1 after the laser chip is coated with the undercoat resin 15 from the outside.

Description

[Detailed Description of the Invention] [Technical Field] The present invention relates to a light emitting electronic device, for example, a semiconductor laser element (laser chip) that emits (emits) laser light from a resonator end facet, or an integrated device having a semiconductor laser section. The present invention relates to a light emitting electronic device incorporating a chip such as an optical device (OEIC).

[Background technology]

Light sources for optical communications or digital audio discs,
Regarding semiconductor laser elements that serve as light sources for information processing devices such as video discs, for example, Sem1conduc
tor World, May 1982.

“Technological innovation of semiconductor lasers” by Oka et al. on page 25
Discussed in the literature entitled.

In addition, as prior art of manufacturing and assembly technology, (1) 1 Nikkei Electronics, September 14, 1981 issue.

°° Audio by felling etc. on pages 138-72
Semiconductor laser that meets the demands of disks”, 12+.

Nikkei Mechanical, July 5, 1982, 68-77
Semiconductor laser devices (hereinafter also simply referred to as laser chips) are introduced in the literature entitled "Visible light semiconductor laser begins mass production. Invention of multilayer structure to confine current" by Sakiyama et al. Fixed to the main surface of the submount.

However, these techniques do not recognize that the laser chip is fixed to the submount in a bare state and the alignment by νC is not recognized.

That is, as shown in the schematic diagram of FIG. 1, the laser chip 1 is fixed to the sub-mount (2) in a bare state via the solder 3 as described above, but the laser chip 1 is attached to the double Since the terror junction (pni joint) 4 and the resonator end face 5 are exposed, a movable conductive foreign object 6 may be attached to the laser chip 1° submount 2. If the foreign matter is attached to the wire 7 or the like, the foreign matter will move when the semiconductor laser device is handled, causing damage to the pn junction 4 portion of the laser chip 1 and the resonator end face 5.
The inventors have found that it adheres to the surface and causes a short circuit or blocks the laser beam 8, resulting in poor light emission. Particularly, in the case of a custom product, etc. in which the semiconductor laser device is shipped unpackaged, conductive foreign matter 6 may fly from the outside during handling. It was found that the frequency of foreign matter 6 adhering to the surface is expected to increase.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a highly reliable light emitting electronic device in which short-circuit defects are unlikely to occur.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief summary of typical inventions disclosed in this FIR is as follows.

That is, in the semiconductor laser device of the present invention, the surface portion of the laser chip fixed to the support plate except for the resonator end face is covered with an insulating undercoat resin. Mobile conductive foreign matter attached to the chip etc. is fixed and does not move and adhere to the pn junction, and conductive foreign matter that enters from the outside is blocked by the undercoat resin and does not reach the resonator end face. Since there is no contact with the pn junction,
This will prevent the occurrence of short-circuit defects, and
Even if foreign matter enters from the outside, the area of the resonator end face that is not covered by the undercoat resin is extremely small, so the probability of foreign matter adhering is extremely low, resulting in poor shielding and short circuits where foreign matter blocks the laser beam. Defects are less likely to occur, and the reliability of the semiconductor laser device can be improved.

[Embodiment 1] FIG. 2 is a perspective view showing the main parts of a visible light semiconductor laser device according to an embodiment of the present invention, and FIG. 3 is a perspective view similarly showing a fixed state of a laser chip.

As shown in FIG. 2, the semiconductor laser device in this embodiment includes a plate-shaped support plate (stem) 9, which is the main component of the assembly, and a cap 9 that is airtightly fixed to the main surface of the stem 9. It consists of

The stem 9 is a rectangular metal plate made of Fe--Ni or the like having a thickness of several I, and a heat sink 11 made of copper is fixed to the central part of the main surface (upper surface) with a solder material or the like. .

A laser chip 1 is fixed to the inner surface of the heat sink 11 via a submount 2. Laser chip 1 is
For example, the width is 400 km, the length is 300 μm, and the height is 100 μm, and the resonator that emits laser light is located at a depth of about 3 to 5 μm from the surface of the laser chip 1. Further, the dimensions of the resonator end face are, for example, 2 μm in width and 0.7 μm in thickness.

In such a laser chip 1, as shown in FIG.
It is fixed to the supmount 2 by the solder 3 in a state similar to n). Furthermore, the submount 2 is fixed to the heat sink 11 with a solder material. Note that the laser chip 1 is fixed so as to emit laser light 8 toward the stem 9 and in a direction away from the stem 9. Furthermore, a light receiving element 12 is fixed to the main surface of the stem 9 for receiving the laser beam 8 emitted from the lower end of the laser chip 1 and monitoring the optical output of the laser beam 8.

On the other hand, three leads 13 are fixed to the stem 9. One lead 13 is electrically and fundamentally fixed to the back surface of the stem 9, and the other two leads 13 are fixed to the back surface of the stem 9.
It is electrically insulated and fixed to the stem 9 through the shell 1 and an insulator 14 like a crow.

The upper ends of the leads 13 protruding above the stem 9 are connected to the laser chip 1 and the light receiving element 1 via wires 7, respectively.
2 electrodes.

The laser chip 1 also has an insulating coating layer (
It is covered with an undercoat resin (15). That is, as shown in FIG. 3, the surface of the laser chip 1 except for the resonator end face 5 that emits the laser beam 8 is covered with an undercoat resin 15. The undercoat resin 15 is provided as close as possible to the periphery of the resonator end face 5, and is designed to cover as much of the pn junction portion exposed on the peripheral surface of the laser chip 10 as possible. For example, the coating with the undercoat resin 15 may include:
First, a photoresist is applied to the cavity end face 5 of the laser chip 1, and after drying (do not bake), an undercoat resin 15 is automatically applied using a dispenser or the like, and then an organic solvent (e.g. , acetone). Further, the undercoat resin 15 may be any commonly used undercoat resin, but it is required to be insulating, and in addition, the undercoat resin 15 is required to be insulating, and the undercoat resin 15 is required to be insulating, and also to use heat and semiconductor laser equipment in the heat treatment in the manufacturing process. The resin needs to be heat resistant enough to withstand the heat of time.

On the other hand, a metal cap 10 having a transparent window 16 is hermetically fixed to the main surface of the stem 9, and the laser chip 1
and the heat sink 11 etc. are sealed. The transparent window 16 is formed by closing a circular hole provided in the ceiling of the cap 10 with a transparent glass plate 17. Therefore, the laser beam 8 emitted from the upper end of the laser chip 1 is
The stem 9 and the cap 1 are seen through this transparent glass plate 17.
It is radiated out of the package 18 formed by 0 and 0. Incidentally, the stem 9 is provided with a mounting hole 19 that is used when mounting this semiconductor laser device on various types of equipment.

[Effects] 1. In the semiconductor laser device of the present invention, the laser chip 1 and part of the wire 7 and the submount 2 part, excluding the cavity end face 5 part that emits the laser beam 8, are covered with an insulating undercoat resin 15. Therefore, even if conductive foreign matter 6 flies from the outside and attaches to the laser chip 1 after being covered with the undercoat resin 15, the foreign matter 6 will not come into contact with most parts of the p-n junction. That is, the laser chip 1 has a width of 400 μm and a length of 300 μm.

Although the height is 100 μm, the width of the resonator end face 5 portion forming the pn junction is 2 μm.

Since the thickness is extremely small at 0.7 μm, and the undercoat resin 15 is applied close to the trap resonator end face 5 to the extent that it does not cover the resonator end face 5, the exposed end face of both valve resonators is The probability that foreign matter 6 comes into contact with 5 is extremely low, resulting in the effect that short-circuit defects are less likely to occur.

2. In the semiconductor laser device of the present invention, the laser chimney 1, a portion of the wire 7, and a portion of the submount 2, excluding the portion of the cavity end face 5 that emits the laser beam 8, have an insulating property σ).
Since the foreign matter 6 is covered with the undercoat resin 5, even if foreign matter 6 is attached to each surface portion, the foreign matter 6 is covered with the undercoat resin 15 and fixed.

Therefore, since these foreign substances 6 are not transferred due to vibrations etc. during handling of the semiconductor laser device, short-circuit defects due to adhesion of foreign substances 6 will no longer occur after the product is determined to be non-defective at the time of characteristic inspection. The effect is that the reliability of the semiconductor laser device is increased.

3. From 1 and 2 above, the foreign matter 6 that had adhered in advance is fixed by the undercoat resin 15 and will not move and adhere to the resonator end face 5 portion;
In addition, even if a foreign object 6 flies in from the outside in a state where the package is not applied, etc., the portion of the resonator end face 5 that is not covered with the undercoat resin 15 is extremely small. Because of the small area, the probability of short-circuit defects and laser beam shielding defects is extremely low.
The effect is that the reliability of the semiconductor laser device can be improved.

4. According to 1 to 3 above, the semiconductor laser device of the present invention has an improved manufacturing yield, so that a synergistic effect of reducing the manufacturing cost of the semiconductor laser device can be obtained.

5. Part of the wire connected to the laser chip is wrapped in undercoat resin, so even if some force is applied to the wire, the wire will not deform for a long time, making it possible to create a highly reliable semiconductor laser device. can get.

[Example 2] As shown in Fig. 4, the same effects as in the previous example can be obtained even with a structure in which the laser chip 1 etc. are sealed with a package 2o made of transparent resin3.The semiconductor laser device of this example has the following characteristics. , is a semiconductor laser device having a structure in which the laser beam 8 is not monitored, and has a structure having a pair of leads ]3. That is, one lead 13 has a wide end portion, and a submount 2 to which the laser chip 1 is fixed to this wide portion with a solder 3 is connected to the solder 21.
Fixed by Further, one lead 13 portion including the laser chip 1 etc. is covered with an undercoat resin 15, but the undercoat resin 15 does not cover one resonator end face 5 portion of the laser chip 1 as in the above embodiment. It looks like this. Furthermore, the inner end portion of the other board 13 and the upper surface electrode (not shown) of the laser chip 1 are connected by a wire 7. Also, both leads 13
The inner end portion of the laser chip 1. The wire 7 and the like are covered with a package 20 made of transparent resin. The surface portion of the package 20 through which the laser beam 8 passes is a recess 22, and even if the package 20 comes into contact with another object, the laser beam transmitting surface 23 will not be contaminated due to the recess. Care has been taken to ensure that this is not the case.

This embodiment can obtain the same effects as the previous embodiment, the package 20 is made of resin with low material cost, and the transfer molding technology that is easy to mass-produce can be used to form the pancage 20. The effect is that the cost of the laser device can be reduced.

(1) Since the portion of the semiconductor laser chip other than the light emitting portion is covered with an undercoat resin, the chip will not be destroyed even if some external force is applied to the chip due to transfer molding.

+21 (From 11, it is possible to apply transfer 0 molding technology with high mass productivity.

+31 From (2), the cost reduction of semiconductor laser devices is d
I can fall.

(4) Since the laser emitting surface of the package is a recessed portion, the effect that the emitting surface is not contaminated can be obtained.

〔effect〕

14 In the semiconductor laser device of the present invention, the laser chip excluding the cavity end face 5 portion that emits the laser beam 8, a portion of the wire 7, and the submount 2 portion are covered with an insulating undercoat resin 15. Therefore, even if conductive foreign matter 6 flies from the outside and adheres to the laser chip 1 after being covered with the undercoat resin 15, the foreign matter 6 will not come into contact with most parts of the pn junction. That is, the laser chip 1 has a width of 4000 μm and a length of 300 μm.

While the height is 100 μm, the width of the resonator end face 5 portion forming the pn junction is 2 μm.

The thickness is extremely thin at 0.7 μm, and the undercoat resin 15 is applied close to the resonator end face 5 to the extent that it does not cover the resonator end face 5, so that the exposed image collector The probability that a foreign object 6 comes into contact with the end facet 5 is extremely low, resulting in an effect that short-circuit defects are less likely to occur. Since the chip 1, part of the wire 7, and the submount 2 part are covered with an insulating undercoat resin 15, even if foreign matter 6 is attached to each surface part, these foreign matter 6 will be removed. It is covered and fixed with an undercoat resin 15.

Therefore, since these foreign objects 6 do not move due to vibrations or the like during handling of the semiconductor laser device, short-circuit defects due to adhesion of foreign objects 6 will no longer occur after the product is determined to be non-defective at the time of characteristic inspection. The effect is that the reliability of the semiconductor laser device is increased.

3. From [2] and [2] above, the foreign matter 6 that had been deposited in advance is fixed by the undercoat resin [5] and will not move and become a layer on the resonator end face 5.
Moreover, even if the foreign object 6 comes from outside, such as when the package is not applied and the IR is not applied,
Since the area of the resonator end face 5 that is not covered with the undercoat resin 15 is extremely small, the probability of occurrence of short circuit defects, laser beam shielding defects, etc. is extremely low, and the reliability of the semiconductor laser device can be improved. This effect can be obtained.

4. According to 1 to 3 above, since the semiconductor laser device of the present invention has an improved manufacturing yield, a synergistic effect of reducing the manufacturing cost of the semiconductor laser device can be obtained.

5. A part of the wire connected to the laser chip KJ is wrapped in an undercoat resin, so even if some force is applied to the wire, the wire will not deform much, resulting in a highly reliable semiconductor laser device. .

6. Since the parts of the semiconductor laser chip other than the light emitting part are covered with an undercoat resin, the chip will not be destroyed even if some external force is applied to the chip by transfer molding.

7.6. As a result, transfer molding technology with high productivity can be applied.

8゜7. 3.9 Since the laser emitting surface of the package is a recessed part, the effect that the emitting surface is not contaminated can be obtained.

Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the above Examples, and it should be noted that various changes can be made without departing from the gist of the invention. Not even. For example, the same effect as described above can be obtained even if the laser chip has a so-called P-up structure in which the resonator end face is located far from the submount.

[Application field]

The above explanation has mainly been about the application of the invention made by the present inventor to semiconductor laser technology for information processing using visible light semiconductor lasers, which is the field of application that formed the background of the invention, but it is not limited to this application. , for example, semiconductor laser technology for optical communications, and technology such as integrated optical devices (OEICs) having semiconductor laser sections,
This method can be applied to manufacturing technology for light-emitting electronic devices incorporating LED lights.

The present invention can be applied to a light-emitting electronic device MK incorporating at least a chip having a semiconductor laser section.

[Brief explanation of the drawing]

Fig. 1 is a perspective view showing a conventional laser chip in a fixed state, Fig. 2 is a perspective view showing main parts of a semiconductor laser device according to an embodiment of the present invention, and Fig. 3 similarly shows a laser chip in a fixed state. FIG. 4 is a sectional view showing a semiconductor laser device according to another embodiment of the present invention. ■... Laser chip, 2... Submount, 3...
・Solder, 4...Double heterojunction (pn junction)
, 5... Resonator end face, 6... Foreign matter, 7... Wire, 8... Le-fL9... Stem, 10... Cap, 1]... Heat sink, 12... Light receiving element, 1
3... Lead, 14... Insulator, 7... Wire, 1
5... Coating layer (undercoat resin), 1
6...Transparent window, 17...Transparent glass plate, 18...
Package, 19...Mounting hole, 2o...Package, 21...Solder, 22...Recess, 23...Laser light transmission surface - Fig. 1 Fig. 2 Fig. 3 Fig. 4

Claims (1)

[Claims] 1. A support body, a chip having a semiconductor laser portion fixed to the main surface of the support body and emitting laser light from a resonator end of the end face, and a resonator end of the chip. a coating layer covering the removed chip surface. 2. A support, a chip having a semiconductor laser section that emits laser light, and a chip surface other than the resonator end of the first and end face fixed to the main surface of the support. 3. A light emitting electronic device comprising: a coating layer covering the chip; and a pan cage made of transparent resin covering the chip, the coating layer, and the support. Claim 2, characterized in that the surface portion is recessed.
Light-emitting electronic device IIT, as described in Section 1.