JPS60211947A - Annealing device by indirect heating - Google Patents

Abstract

PURPOSE:To enable to meter the annealed condition of a wafer with an optical system, which is a monitor, by a method wherein the titled indirect annealing device is constituted in such a structure that lamps are disposed on one side of the wafer disposed in the chamber and the optical system is disposed on the other side, the lamp light incident port of the chamber is covered with an opaque susceptor plate and the lamp light is intercepted so as not to enter the optical system directly by performing the interception of the lamp light in such a way. CONSTITUTION:Lamps 6 mounted in a holder 7 have been disposed in the lower direction of a wafer 2. The holder 7 and a chamber 1 have been both fixed on a base 8. A plate 9 made of graphite (graphite plate) has been attached between the wafer 2 and the lamps 6 at a position to cover a lamp light incident window 10 made of quartz glass, which has been attached to the chamber 1. An annealing is performed in the following procedures: light, which emitted from the lamps 6 in the direction indicated by an arrow 13, passes through the lamp light incident window 10 of the chamber 1, the graphite plate 9 is heated and is brought to high temperatures and a wafer 2 is heated with the heat, which is radiated from the graphite plate 9. This annealing device has been made into an indirect heating structure.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an instantaneous annealing apparatus for annealing a wafer using a lamp.

[Background of the invention]

Irradiate the wafer with lamp light and transfer the wafer to 10 in a few seconds.
The instant annealing process heats at a high temperature of around 00℃,
It is attracting attention as an effective method for manufacturing high-performance semiconductor devices.

Methods for monitoring the process of this annealing process include temperature measurement, crystal structure measurement, film thickness measurement, and the like. When this process is introduced into a line, etc., these measurements must be performed non-destructively, non-contact, and in-process. Optical measurement is the most promising measurement method that satisfies this condition.

For example, an infrared radiation thermometer is an optical means for measuring temperature during annealing. This infrared radiation thermometer measures temperature by the amount of infrared radiation emitted from a high-temperature object. However, when measuring the temperature of a wafer using this infrared radiation thermometer, the light from the lamp becomes interfering light, making accurate measurement impossible. This is because the light emitted by the lamp includes the entire spectrum of light wavelengths, of which infrared light is particularly disturbing.

In addition, Raman measurement, which measures changes in the crystal structure of a wafer during annealing, is another optical measurement method.
In most cases, light from lamps in the visible range is a nuisance.

As described above, most of the optical measurements suitable for in-process measurements for monitoring the annealing process are not effective measurement methods because the light from the lamp becomes interfering light.

[Purpose of the invention]

The present invention has been made with attention to the above points, and an object of the present invention is to provide an instantaneous annealing apparatus that enables monitoring of the annealing process by optical measurement during annealing.

[Summary of the invention]

To achieve the above object, the present invention includes a lamp on one side of a wafer placed in a chamber and an optical system on the other side, and an opaque lamp light entrance of the chamber located between the wafer and the lamp. It is covered with a susceptor plate (for example, a graphite plate) to block the lamp light so that it does not directly enter the optical system, making it possible to perform optical measurement to monitor the annealing state.

[Embodiments of the invention]

Hereinafter, the present invention will be explained in detail with reference to Examples.

The figure is a sectional view showing an embodiment of the instantaneous annealing apparatus according to the present invention.

A wafer 2 is held within a chamber 1 by a support 3. Above the chamber 1, there is an infrared radiation thermometer 4, which is an example of an optical measuring instrument, mainly used for temperature measurement in high temperature areas.
is located. Infrared radiation thermometer 4 is in chamber 1
The upper surface of the wafer 2 is seen through a window glass 5 made of quartz glass attached above. A lamp 6 is installed in a holder 7 below the wafer 2 . Both the holder 7 and the chamber 1 are fixed to a base 8. Between the wafer 2 and the lamp 6, a graphite plate 9 (hereinafter referred to as graphite plate), which is an example of an opaque susceptor plate, is placed at a position that covers a lamp light entrance window 10 made of quartz glass provided in the chamber 1. installed. This graphite plate 9 is similarly made of graphite and is fitted and fixed in a recess 11 having a gap in the outer circumferential direction and in the vertical direction.

The chamber 1 has a double structure in which cold water 12 flows inside for the purpose of cooling.

In annealing in this apparatus, light emitted from the lamp 6 in the direction of the arrow 13 passes through the lamp light entrance window 10 of the chamber 1,
Graphite plate 9 is heated. It has an indirect heating structure in which the graphite particles 9 reach a high temperature and the wafer 2 is heated by the heat radiated from the graphite plate 9.

Here, the structure is such that the lamp light does not penetrate above the graphite plate 9. The graphite plate 9 is fixed in a recess 11, and the gap therebetween absorbs thermal deformation of the graphite plate 9 due to non-uniform heating. Furthermore, the structure has long overlapping parts of graphite that prevent lamp light from leaking upward.

Further, the chamber 1 is made of metal, for example, stainless steel, so that no light can pass through it.

According to this embodiment, there are the following effects.

(1) Direct light from the lamp does not enter the optical system.

(2) The graphite plate is not destroyed by thermal deformation.

(3) Since indirect heating is used, the wafer is heated at a relatively uniform temperature.

〔Effect of the invention〕

As a result of the above, according to the present invention, an instantaneous annealing apparatus capable of optical measurement during annealing as a monitor of the annealing process could be obtained.

[Brief explanation of the drawing]

The figure is a sectional view showing an embodiment of the instantaneous annealing apparatus according to the present invention.

Claims (1)

[Claims] A lamp is placed on one side of the wafer placed in the chamber, an optical system for monitoring an annealing state is placed on the other side, and an opaque susceptor plate is placed between the wafer and the lamp, covering a lamp light incident window provided in the chamber. An instantaneous annealing device characterized by the following configuration.