JPS60198536A - High energy ray-sensitive resin composition - Google Patents

High energy ray-sensitive resin composition

Info

Publication number
JPS60198536A
JPS60198536A JP5438084A JP5438084A JPS60198536A JP S60198536 A JPS60198536 A JP S60198536A JP 5438084 A JP5438084 A JP 5438084A JP 5438084 A JP5438084 A JP 5438084A JP S60198536 A JPS60198536 A JP S60198536A
Authority
JP
Japan
Prior art keywords
polymer
compounds
halogen
energy ray
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5438084A
Other languages
Japanese (ja)
Other versions
JPH0481183B2 (en
Inventor
Tsugio Yamaoka
亜夫 山岡
Sanjiyu Fukuda
三寿 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP5438084A priority Critical patent/JPS60198536A/en
Publication of JPS60198536A publication Critical patent/JPS60198536A/en
Publication of JPH0481183B2 publication Critical patent/JPH0481183B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

PURPOSE:To obtain a resin compsn. enhanced in sensitivity by adding at least one kind of specified org. compd. in a polymer soln. contg. a polymer or copolymer made from a halogenated monomer represented by a specified formula. CONSTITUTION:The present high energy ray-sensitive resin is obtained by preparing a polymer soln. contg. a polymer or copolymer made from a halogenated monomer represented by the formula (X1 is H, halogen, 1-4C straight optionally halogenated alkyl; X2, Y, Z are each H, halogen, or 1-4C alkyl; and R is an aromatic or hetero ring), and adding at least one kind of compd. selected form aniline homologues, N-alkylanilines, arylamines, amines having amino groups on the side chains, and condensed ring type amino compds. to this soln.

Description

【発明の詳細な説明】 本発明は、X線、電子線又はイオンビームなどの高エネ
ルギー線に対し、感受性を有する高分子溶液に増感効果
を示す有機化合物を添加してなる半導体製造用高エネル
ギー線感受性樹脂組成物に種の有機化合物を添加してな
る高エネルギー線感受性樹脂組成物。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a polymer solution for semiconductor manufacturing, which is made by adding an organic compound that exhibits a sensitizing effect to a polymer solution that is sensitive to high-energy rays such as X-rays, electron beams, or ion beams. A high energy ray sensitive resin composition obtained by adding a seed organic compound to an energy ray sensitive resin composition.

(1) アニリン、アセトアニリド、アンスラニル酸、
O1m+p−ニトロアニリン、クロルアニリンなどのア
ニリン同族体 (2) メチルアニリン、ミヒラーケトン、p−ジメチ
ルアミノ安息香酸、p−ジメチルアミノベンズアルデヒ
ドなどのN−アルキルアニリン類 (3) ジフェニルアミン、p−アミノジ7工二ルアミ
ン、トリフェニルアミンなどのアリールアミン類 (4) ベンジルアミン、β−フェネチルアミンなどの
側鎖にアミノ基を有するアミン類(5) Or m、p
−フェニレンジアミン、p−アミノアセトアニリドなど
の芳香族ジアミン類(6) ナフチルアミンなどの縮合
環式アミノ化合物 (7) ビロール、イミダゾール、N−ビニルカルバソ
ール、ポリビニルカルバソー/Inト関するものである
(1) Aniline, acetanilide, anthranilic acid,
O1m+Aniline homologs such as p-nitroaniline and chloraniline (2) N-alkylanilines such as methylaniline, Michler's ketone, p-dimethylaminobenzoic acid, and p-dimethylaminobenzaldehyde (3) Diphenylamine, p-aminodi7 Arylamines such as phenylamine and triphenylamine (4) Amines having an amino group in the side chain such as benzylamine and β-phenethylamine (5) Or m,p
- Aromatic diamines such as phenylenediamine and p-aminoacetanilide (6) Fused cyclic amino compounds such as naphthylamine (7) Virol, imidazole, N-vinylcarbasol, and polyvinylcarbaso/Int.

近年、半導体集積回路は、ますます高密度化しつつある
。これらは、従来は主として、ホトレジストと呼ばれる
感光性高分子材料に紫外線を照射する加工工程を経て作
成されて来たが、回路パターンの微細化、高精度化にと
もない、光の回折と干渉に起因する解像度の限界が、顕
在化している。
In recent years, semiconductor integrated circuits have become increasingly dense. Conventionally, these have been mainly created through a processing process in which a photosensitive polymer material called photoresist is irradiated with ultraviolet rays, but as circuit patterns have become finer and more precise, they have been created by light diffraction and interference. The limits of resolution are becoming apparent.

これに対し、波長のより短かいX線や電子線による露光
法が微細パターンを形成しうる技術として注目され、一
部ですでに実用化するに至っている。
In contrast, exposure methods using X-rays or electron beams, which have shorter wavelengths, have attracted attention as technologies that can form fine patterns, and have already been put into practical use in some cases.

しかしながら、これらの高エネルギー線では、一般にレ
ジスト材のエネルギー吸収効率は低く、その結果、露光
に長時間を要し、十分なスループットが得られない、と
いう欠点があった。
However, with these high-energy rays, the energy absorption efficiency of resist materials is generally low, and as a result, exposure requires a long time, resulting in a disadvantage that sufficient throughput cannot be obtained.

本発明者らは、鋭意検討した結果、ハロゲン化した基を
その構造中に有するポリマーを有機溶媒に溶解せしめた
高エネルギー線感受性組成物に1成る種の有機溶媒可溶
性の添加物を加えることにより、感度を向上しうろこと
を見出し、本発明を完成したものである。
As a result of extensive studies, the present inventors discovered that by adding one kind of organic solvent-soluble additive to a high-energy radiation-sensitive composition prepared by dissolving a polymer having a halogenated group in its structure in an organic solvent. He discovered scales with improved sensitivity and completed the present invention.

すなわち、本発明は (ここでX饋は水素、ハロゲン、炭素数1〜4の直鎖ハ
ロゲン化アルキル又は炭素数1〜4の直鎖アルキルであ
り’ Xt* Y、 Zは水素。
That is, the present invention provides (where X is hydrogen, halogen, a straight chain halogenated alkyl having 1 to 4 carbon atoms, or a straight chain alkyl having 1 to 4 carbon atoms, Xt*Y, and Z is hydrogen.

ハロゲン又は炭素数1〜4のハロゲン化アルキルを表わ
す。さらにRは芳香環、又は複素環を示す) で示される含ハロゲンモノマーより得られた重合体又は
共重合体を含む高分子溶液に下記(1)〜θ本からなる
群より選ばれた少なくとも一種の有機化合物を添加して
なる高エネルギー線感受性樹脂組成物を提供するもので
ある。
Represents halogen or halogenated alkyl having 1 to 4 carbon atoms. Furthermore, R represents an aromatic ring or a heterocycle) At least one member selected from the group consisting of the following (1) to θ is added to a polymer solution containing a polymer or copolymer obtained from a halogen-containing monomer represented by The present invention provides a high-energy ray-sensitive resin composition containing an organic compound of the present invention.

(1) アニリン、アセトアニリド、アンスラニル酸、
09m、p−ニトロアニリン、クロルア(2) メチル
アニリン、ミヒラーケトン、p−ジメチルアミノ安息香
酸、p−ジメチルアミノベンズアルデヒドなどのN−ア
ルキルアニリン類 (3) ジフェニルアミン、p−アミノジフェニルアミ
ン、トリフェニルアミンなどのアリールアミン類 (4) ベンジルアミン、β−7エネテルアミンなどの
側鎖にアミノ基を有するアミン類(5101m* p−
7エニレンジアミン、p−アミノアセトアニリドなどの
芳香族ジアミン類(6) ナフチルアミンなどの縮合環
式アミノ化合物 (7) ヒロール、イミダゾール、N−ビニルカルバゾ
ール、ポリビニルカルバゾールなどの複素環式化合物 (8) ピリドキサミンなどの複素環式アミン類(9)
p−メトキシ安息香酸、p−アミロキシ安息香酸などの
安息香酸系化合物 θQ アントラキノン、5−クロローアントラキノンな
どのアントラキノン系化合物 0カ5−ニトロアセナフテンなどの芳香族ニトロ化合物 61 ヘキサンジアミン、N−メチルジクロヘキシルア
ミン、ジクロヘキシルアミンなどの脂環式アミン化合物 上記一般式をその構造中に含む重合体または共重合体の
分子量及び溶液濃度については、厳密な限定を必要とし
ないが、分子量は有機溶媒に溶解し、通常の手段により
被膜を形成し得るものであれば感光性高分子として使用
することができるが、一般にはi、 o o o〜1.
000.000のものが用いられる。溶液が>度は5〜
4oz(w/V)程度が一般的である。
(1) Aniline, acetanilide, anthranilic acid,
09m, p-nitroaniline, chlorua (2) N-alkylanilines such as methylaniline, Michler's ketone, p-dimethylaminobenzoic acid, p-dimethylaminobenzaldehyde (3) Diphenylamine, p-aminodiphenylamine, triphenylamine, etc. Arylamines (4) Amines having an amino group in the side chain such as benzylamine and β-7enetelamine (5101m* p-
7 Aromatic diamines such as enylene diamine and p-aminoacetanilide (6) Fused cyclic amino compounds such as naphthylamine (7) Heterocyclic compounds such as hyrol, imidazole, N-vinylcarbazole, and polyvinylcarbazole (8) Pyridoxamine Heterocyclic amines (9) such as
Benzoic acid compounds such as p-methoxybenzoic acid and p-amyloxybenzoic acid θQ Anthraquinone compounds such as anthraquinone and 5-chloroanthraquinone Aromatic nitro compounds such as 5-nitroacenaphthene 61 Hexanediamine, N-methyl Alicyclic amine compounds such as dichlorohexylamine and dichlorohexylamine There are no strict limitations on the molecular weight and solution concentration of the polymer or copolymer containing the above general formula in its structure, but the molecular weight is determined by the organic solvent. It can be used as a photosensitive polymer as long as it can be dissolved in and form a film by ordinary means, but in general, it can be used as a photosensitive polymer.
000.000 is used. If the solution is >5 degrees
It is generally about 4 oz (w/V).

かかる感光性高分子溶液を形成するための有機溶媒とし
ては、メチルセロゾルプ、エチルセロゾルプなどのアル
コール類、アセトン、メチルエチルケトン、メチルイン
ブチルケトンなどのケトン類、酢酸エチル、酢酸n−プ
ロピル、酢酸n−アミル、酢酸イソアミル、酢酸エチル
セロゾルブなどのエステル顧、四塩化炭素、テトラクロ
ロエタンなどのハロゲン化アルキル類、テトラヒドロフ
ラン、ピロールなどの複素環化合物、ベンゼン。
Examples of the organic solvent for forming such a photosensitive polymer solution include alcohols such as methylcellosolp and ethylcellosolp, ketones such as acetone, methylethylketone, and methylimbutylketone, ethyl acetate, n-propyl acetate, n-amyl acetate, Ester compounds such as isoamyl acetate and ethyl acetate cellosolve, alkyl halides such as carbon tetrachloride and tetrachloroethane, heterocyclic compounds such as tetrahydrofuran and pyrrole, and benzene.

トルエン、キシレン、モノクロロベンゼンなどの芳香族
化合物、シクロヘキサンなどの脂環式化合物などが挙げ
られる。
Examples include aromatic compounds such as toluene, xylene, and monochlorobenzene, and alicyclic compounds such as cyclohexane.

本発明に於て、増感剤として添加する有様化合物として
は、前記感光性高分子溶解用有機溶媒に溶解するもので
あれば低分子、高分子を問わず使用することができるが
、前記(1)から0壜に掲げる化合物が好適である。
In the present invention, as the specific compound added as a sensitizer, any compound can be used regardless of whether it is a low molecule or a polymer as long as it is soluble in the organic solvent for dissolving the photosensitive polymer. Compounds listed in (1) to 0 are suitable.

これらの有機化合物の添加量は特に厳密な限定を必要と
しないが、感光性高分子に対して1〜50重量%程度が
好ましい。
The amount of these organic compounds added does not need to be particularly strictly limited, but is preferably about 1 to 50% by weight based on the photosensitive polymer.

更にこれらの有様化合物はあらかじめメタノール、エタ
ノール、n−プロパツール、イソプロパツール、n−ブ
タノール、グリセリンなどのケルコール類、ジエチルエ
ーテルなどのエーテル類、酢酸、無水酢酸などの脂肪酸
およびその誘導体などの溶媒に溶解して使用することも
できる。かくして得られた本発明の感光性組成物を基材
に塗布し・X線、γ線、放射線などの放射線により露光
し、現像することによシ、本組成物は他の特性を損うこ
となく感度が著しく向上し、かつガンマ値も優れた値を
与えるものであることが明らかとなった。
Furthermore, these specific compounds have been pre-contained with kercols such as methanol, ethanol, n-propatool, isopropatool, n-butanol, and glycerin, ethers such as diethyl ether, fatty acids such as acetic acid and acetic anhydride, and their derivatives. It can also be used after being dissolved in a solvent. By applying the thus obtained photosensitive composition of the present invention to a substrate, exposing it to radiation such as X-rays, γ-rays, radiation, and developing it, the composition may lose other properties. It was revealed that the sensitivity was significantly improved without any problems, and the gamma value was also excellent.

以下、本発明を実施例をもって説明するが、本発明はこ
れらの実施例により伺ら限定されるものではない。
The present invention will be explained below with reference to examples, but the present invention is not limited to these examples.

実施例1 クロロメチル化率50チ9分子量4万の部分クロロメチ
ル化ポリスチレンのキシレン溶液(東洋傳達工業社製、
商品名OMB−gx)に各種添加剤を加え、この組成物
をシリコンウェハーにスピンコード後プリベーク(12
0℃、!IO分)、電子線照射(加速電圧zoxv)を
行った。
Example 1 A xylene solution of partially chloromethylated polystyrene with a chloromethylation rate of 50 cm and a molecular weight of 40,000 (manufactured by Toyo Dentatsu Kogyo Co., Ltd.,
Various additives were added to OMB-gx (trade name:
0℃! IO minutes) and electron beam irradiation (acceleration voltage zoxv).

未露光レジスト層を酢酸インアミルーエチルセロゾルブ
混合液(混合比20:80)で現像し、イソプロパツー
ルでリンスした後膜厚を測定し、感度曲線を作成した。
The unexposed resist layer was developed with a mixture of inamyl acetate and ethyl cellosolve (mixing ratio 20:80), rinsed with isopropanol, and the film thickness was measured to create a sensitivity curve.

残11q率50チにおける露光量を感度として表わし、
添加剤の効果を見た所、表に示す結果が得られた。
The exposure amount at the remaining 11q rate of 50chi is expressed as sensitivity,
When looking at the effects of the additives, the results shown in the table were obtained.

この表より添加剤の増感効果は明らかである。The sensitizing effect of the additive is clear from this table.

実施例2 クロロメチル化率15チ9分子量11万の部分クロロメ
チル化ポリスチレン(東洋曹達工業社製、商品名ays
−DU)および、このもの109を臭化カリ12gとと
もに50./のN、Nジメチルアミドに混合、攪拌(4
時間)シ、メタノール滴下により得られた部分ブロムメ
チル化ポリスチレンのキシレン溶液に各種添加剤を加え
実施例1と同様にシリコンウェハー上に塗布した。この
ものに軟X線(ターゲット、Rh、波長4.6K )を
照射見、実施例1と同様にして相対感度をめ、次表の結
果が得られた。
Example 2 Partially chloromethylated polystyrene with a chloromethylation rate of 15 cm and a molecular weight of 110,000 (manufactured by Toyo Soda Kogyo Co., Ltd., trade name: ays)
-DU) and 109 of this with 12 g of potassium bromide at 50. / of N,N dimethylamide and stirred (4
Time) Various additives were added to a xylene solution of partially bromomethylated polystyrene obtained by dropping methanol, and the solution was coated on a silicon wafer in the same manner as in Example 1. This material was irradiated with soft X-rays (target, Rh, wavelength 4.6K), and the relative sensitivity was determined in the same manner as in Example 1, and the results shown in the following table were obtained.

実施例5 ポリ(2−ビニルナフタレン)59を50m1のクロロ
メチルメチルエーテルに溶解後1 mlの塩化第一スズ
を加え一晩攪拌後反応液を大量のメタノール中に注ぎ、
得られたクロロメチル化ポリビニルナフタレン沈澱を乾
燥後キシレン溶液とした。
Example 5 Poly(2-vinylnaphthalene) 59 was dissolved in 50 ml of chloromethyl methyl ether, 1 ml of stannous chloride was added, and after stirring overnight, the reaction solution was poured into a large amount of methanol.
The obtained chloromethylated polyvinylnaphthalene precipitate was dried and made into a xylene solution.

このものを実施例1と同様に塗布、電子線照射し得られ
た結果を次表に示した。
This material was coated and irradiated with an electron beam in the same manner as in Example 1, and the results are shown in the following table.

実施例4 ポリビニルカルバゾール169をクロルベンゼン250
dおよびピリジン100dとともに混合。
Example 4 Polyvinylcarbazole 169 and chlorobenzene 250
d and mixed with pyridine 100d.

溶解した。臭素109を加え30分間攪拌後大景のエタ
ノールを注ぎ、得られた沈澱をクロルベンゼンに溶解し
た。このものを実施例1と同様塗布。
Dissolved. After adding bromine 109 and stirring for 30 minutes, ethanol from Daikei was poured, and the resulting precipitate was dissolved in chlorobenzene. This product was applied in the same manner as in Example 1.

電子線露光、現像した結果、下記の相対感度が得られた
As a result of electron beam exposure and development, the following relative sensitivity was obtained.

実施例5 ポリスチレン(東洋U達工業製、標準ポリスチレン、F
−4)59を塩化メチレン100 meに溶解し、36
チ塩酸100 meを加えた後白金電極を用いる有機電
解反応を行った。反応終了後大助のメタノールを注ぎ、
生じた沈澱を濾過、乾燥した。
Example 5 Polystyrene (manufactured by Toyo Uta Kogyo, standard polystyrene, F
-4) Dissolve 59 in 100 me of methylene chloride,
After adding 100 me of thihydrochloric acid, an organic electrolytic reaction using a platinum electrode was performed. After the reaction is complete, pour in Daisuke's methanol,
The resulting precipitate was filtered and dried.

こうして得られた塩素化ポリスチレンを各種添加剤とと
もにキシレンに溶解後、実施例1と同様に、塗布、露光
し次表の結果を得た。
The thus obtained chlorinated polystyrene was dissolved in xylene together with various additives, and then coated and exposed in the same manner as in Example 1 to obtain the results shown in the following table.

Claims (1)

【特許請求の範囲】 り 下記一般式 (ここでX、とは水素、ハロゲン、炭素数1〜4の直鎖
ハロゲン化アルキル又は炭素数1〜4の直鎖アルキルで
あり、X、、Y、Zは水素。 ハロゲン又は炭素数1〜4のハロゲン化アルキルを表わ
す。さらにRは芳香環または複素環を示す) で示される含ハロゲンモノマーより得られた重合体又は
共重合体を含む高分子溶液に下記111++、11ル請
、Lモ@ n’l: P h :Wd I−J’ −1
’l J−/l、代/ I−J−の複素環式化合物 (8) ピリドキサミンなどの複素環式アミン類(9)
p−メトキシ安息香m1p−アミロキシ安息香酸などの
安息香酸系化合物 へり アントラキノン、3−クロロ−アントラキノンな
どのアントラキノン系化合物 自め 5−ニトロアセナフテンなどの芳香族ニトロ化合
物 62 ヘキサンジアミン、N−メチルジクロヘキシルア
ミン、ジシクロヘキシルアミンなどのり旨項式アミン化
合物 2)高エネルギー線源がX線、電子線又はイオンビーム
である特許請求の範囲第1項記載の高エネルギー線感受
性樹脂組成物。
[Scope of Claims] The following general formula (where X is hydrogen, halogen, a straight chain halogenated alkyl having 1 to 4 carbon atoms, or a straight chain alkyl having 1 to 4 carbon atoms, Z is hydrogen; represents a halogen or a halogenated alkyl having 1 to 4 carbon atoms; and R represents an aromatic ring or a heterocycle) A polymer solution containing a polymer or copolymer obtained from a halogen-containing monomer 111++, 11 ru request, Lmo@n'l: P h :Wd I-J' -1
'l J-/l, group/I-J- heterocyclic compounds (8) Heterocyclic amines such as pyridoxamine (9)
Benzoic acid compounds such as p-methoxybenzoic acid p-Amyloxybenzoic acid Anthraquinone compounds such as anthraquinone and 3-chloro-anthraquinone Aromatic nitro compounds such as 5-nitroacenaphthene 62 Hexanediamine, N-methyl dichlorohexyl 2) The high-energy ray-sensitive resin composition according to claim 1, wherein the high-energy ray source is an X-ray, an electron beam, or an ion beam.
JP5438084A 1984-03-23 1984-03-23 High energy ray-sensitive resin composition Granted JPS60198536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5438084A JPS60198536A (en) 1984-03-23 1984-03-23 High energy ray-sensitive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5438084A JPS60198536A (en) 1984-03-23 1984-03-23 High energy ray-sensitive resin composition

Publications (2)

Publication Number Publication Date
JPS60198536A true JPS60198536A (en) 1985-10-08
JPH0481183B2 JPH0481183B2 (en) 1992-12-22

Family

ID=12969072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5438084A Granted JPS60198536A (en) 1984-03-23 1984-03-23 High energy ray-sensitive resin composition

Country Status (1)

Country Link
JP (1) JPS60198536A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56102843A (en) * 1980-01-18 1981-08-17 Nec Corp Resist material
JPS58216243A (en) * 1982-06-10 1983-12-15 Japan Synthetic Rubber Co Ltd Ionizing radiation-sensitive material
JPS5979247A (en) * 1982-10-29 1984-05-08 Japan Synthetic Rubber Co Ltd Ionizing radiation sensitive material
JPS59148057A (en) * 1983-02-14 1984-08-24 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition and method for using it

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56102843A (en) * 1980-01-18 1981-08-17 Nec Corp Resist material
JPS58216243A (en) * 1982-06-10 1983-12-15 Japan Synthetic Rubber Co Ltd Ionizing radiation-sensitive material
JPS5979247A (en) * 1982-10-29 1984-05-08 Japan Synthetic Rubber Co Ltd Ionizing radiation sensitive material
JPS59148057A (en) * 1983-02-14 1984-08-24 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition and method for using it

Also Published As

Publication number Publication date
JPH0481183B2 (en) 1992-12-22

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