JPS6019647B2 - transformer circuit - Google Patents

transformer circuit

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Publication number
JPS6019647B2
JPS6019647B2 JP2572277A JP2572277A JPS6019647B2 JP S6019647 B2 JPS6019647 B2 JP S6019647B2 JP 2572277 A JP2572277 A JP 2572277A JP 2572277 A JP2572277 A JP 2572277A JP S6019647 B2 JPS6019647 B2 JP S6019647B2
Authority
JP
Japan
Prior art keywords
winding
transformer
attenuation
secondary winding
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2572277A
Other languages
Japanese (ja)
Other versions
JPS53110029A (en
Inventor
茂 岡
進 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2572277A priority Critical patent/JPS6019647B2/en
Publication of JPS53110029A publication Critical patent/JPS53110029A/en
Publication of JPS6019647B2 publication Critical patent/JPS6019647B2/en
Expired legal-status Critical Current

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  • Attenuators (AREA)

Description

【発明の詳細な説明】 本発明は各種通信機器に使用される広帯域の変成器回路
に関し、特に通過帯域の中城の不整合減衰量を大中に改
善した変成器回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wideband transformer circuit used in various communication devices, and more particularly to a transformer circuit that greatly improves the amount of mismatch attenuation in the passband.

通信機器に使用される変成器は使用帯域内で動作減衰量
特性が平坦で小さいこと、および反射波の影響を軽減す
るために、信号源ならびに負荷抵抗とのインピーダンス
整合が良好なこと、すなわち不整合減衰量特性が大きい
ことが要求される。このことは波形伝送を主目的とする
装置に対して特に重要である。また機械的には小形であ
ることが望ましい。従来、このような変成器を実現する
ためには、比透磁率の大きな磁心を用いればよいことが
知られている。
Transformers used in communication equipment must have flat and small operating attenuation characteristics within the band of use, and must have good impedance matching with the signal source and load resistance to reduce the effects of reflected waves. A large matching attenuation characteristic is required. This is particularly important for devices whose primary purpose is waveform transmission. Furthermore, it is desirable that the device be mechanically small. Conventionally, it has been known that in order to realize such a transformer, it is sufficient to use a magnetic core with a large relative magnetic permeability.

しかし比透磁率の大きな磁心の実現には限界があり現実
には比透磁率が大きくなるにつれて磁心の不安定性が増
大し、使用上様々な制約を受ける。また、巻線に直流電
流が流れて直流磁化力が印加される場合には、飽和磁束
密度の点から比透磁率の大きさはさらに制約されること
になる。このため小形で且つ不整合減衰量の大きい変成
器を実現するには、必然的に紬線を多数回巻線すること
になるがこのことは巻線により直流抵抗が増大し、これ
が電気的特性を劣下させることになる。本発明は、目的
は上述た欠点を除去した不整合減衰量の良好な変成器回
路を提供することにある。
However, there is a limit to the realization of a magnetic core with a large relative magnetic permeability, and in reality, as the relative magnetic permeability increases, the instability of the magnetic core increases, and there are various restrictions on use. Further, when a direct current flows through the winding and a direct current magnetizing force is applied, the relative magnetic permeability is further restricted in terms of saturation magnetic flux density. Therefore, in order to realize a transformer that is small and has a large amount of mismatch attenuation, it is necessary to wind the pongee wire many times, but this increases the DC resistance due to the winding, which affects the electrical characteristics. This will lead to the deterioration of An object of the present invention is to provide a transformer circuit with good mismatched attenuation, which eliminates the above-mentioned drawbacks.

本発明の変成器は1次巻線と2次巻線の間に金属箔を挿
入して静電シールドしその静電シールドの端末間に所定
の条件を実質的に満たす抵抗値を有する抵抗器を後続し
たことを特徴としている。
The transformer of the present invention includes a metal foil inserted between the primary winding and the secondary winding for electrostatic shielding, and a resistor having a resistance value that substantially satisfies a predetermined condition between the terminals of the electrostatic shield. It is characterized by the fact that it followed.

その結果動作減衰量をやや蟻・性にして、不整合減衰量
を改善できた。次に本発明を図面を参照して詳細に説明
する。
As a result, we were able to improve the mismatch attenuation by making the operating attenuation a little more uniform. Next, the present invention will be explained in detail with reference to the drawings.

第1図は縦電流を減少させるための静電シールドを有す
る従来の変成器の回路図である。図において、滋心1に
1次巻線2と2次巻線3が者回されその1次側巻線2と
2次側巻線3との間に金属箔を巻回することにより1次
側巻線2と2次側巻線3との静電気的結合を軽減するた
めの静電シールド4を形成している。このシールド4の
一端5は接地され1次巻線2の両側端子T,およびT,
′には、内部抵抗R,を有する信号源6が接続され2次
巻線3の両側端子L,T2′には、抵抗値R2なる負荷
7が接続されている。第2図は本発明の一実施例を示す
回路図である。
FIG. 1 is a circuit diagram of a conventional transformer with an electrostatic shield to reduce longitudinal current. In the figure, a primary winding 2 and a secondary winding 3 are wound around the center 1, and a metal foil is wound between the primary winding 2 and the secondary winding 3. An electrostatic shield 4 is formed to reduce electrostatic coupling between the side winding 2 and the secondary winding 3. One end 5 of this shield 4 is grounded, and both terminals T and T of the primary winding 2 are connected to the ground.
' is connected to a signal source 6 having an internal resistance R, and a load 7 having a resistance value R2 is connected to terminals L and T2' on both sides of the secondary winding 3. FIG. 2 is a circuit diagram showing one embodiment of the present invention.

図において、変成器12は1次巻線2と、2次巻線3と
、これら1次および2次巻線との間に形成された静電シ
ールド4と、シールド4の接地端9の反対側の端10と
接地との間に接続された抵抗値R3なる抵抗11とから
構成されている。第1図に示すような変成器8において
、1次側巻線2の巻数n,と2次側巻線3の巻線止との
巻数比(n2/n,)をn、1次巻線2の直流抵抗をッ
,、2次側巻線3の直流抵抗をy2とすると、第1図の
変成器8は第4図aのように表せ、一般に(R2/R,
)=n2を実質的に満たすように設計される。同図aの
回路は、通過帯城の中城においては同図bに示すような
等価回路で表わせる。同図bにおいて、端子T,一T,
′から変成器側を見たインピーダンスZinはZin=
y,十y2/n2十R2/〆=y,十y2/〆十R,と
なる。
In the figure, the transformer 12 has a primary winding 2, a secondary winding 3, an electrostatic shield 4 formed between these primary and secondary windings, and an opposite ground end 9 of the shield 4. A resistor 11 having a resistance value R3 is connected between the side end 10 and ground. In the transformer 8 as shown in FIG. The transformer 8 in FIG. 1 can be expressed as shown in FIG. 4a, and generally (R2/R,
)=n2. The circuit shown in figure a can be expressed as an equivalent circuit as shown in figure b in the middle castle of the passage zone. In the same figure b, terminals T, -T,
The impedance Zin when looking at the transformer side from ' is Zin=
y, 10y2/n20R2/〆=y, 10y2/〆10R.

信号源6の内部抵抗R,を基準にしたときの変成器側を
見たインピーダンスの整合状態すなわち不整合減衰量R
しはRL=2印。
The matching state of impedance when looking at the transformer side when the internal resistance R of the signal source 6 is referenced, that is, the mismatch attenuation R
Shiha RL = 2 mark.

g1亀三器,で表わされる。It is expressed as g1Kamesanki.

上式のZinを代入すると、 Rし:2m増1豊三亭主竿声/毒≧巽手1:加増1波1
;.主1テ麦毒小21 =2瓜。
Substituting Zin in the above formula, R: 2m increase 1 Toyosantei main rod voice/poison ≧ Tatsumate 1: increase 1 wave 1
;. Main 1 tea poison 21 = 2 melons.

g{y,希2′nM}■ .・・【1)となる。この式
から明らかなように不整合減衰量RLは1次側巻線2お
よび2次側巻線3の夫々の直流抵抗y,およびy2に支
配される。第2図において、1次側巻線2の直流抵抗を
y,、2次側巻線3の直流抵抗をy2、静電シールド4
の端子9と10間の直流抵抗をッ3 および静電シール
ド4に接続された抵抗11の低抗値をR3としさらに1
次側巻線2の巻数をn,、2次側巻線3の巻数を−、静
電シールドの巻回数を1とするとき、巻数比(n,/山
)2=R./R2を実質的に満たすように構成されるよ
うな変成器12の端子T,,T,′間およびT2,T2
′間の不整合減衰量RL,,RL2は次に示すように表
わせる。
g{y, rare 2'nM}■. ...[1] becomes. As is clear from this equation, the mismatch attenuation RL is governed by the DC resistances y and y2 of the primary winding 2 and the secondary winding 3, respectively. In Figure 2, the DC resistance of the primary winding 2 is y, the DC resistance of the secondary winding 3 is y2, and the electrostatic shield 4 is
Let the DC resistance between terminals 9 and 10 be 3 and the low resistance value of the resistor 11 connected to the electrostatic shield 4 be R3.
When the number of turns of the secondary winding 2 is n, the number of turns of the secondary winding 3 is -, and the number of turns of the electrostatic shield is 1, the turns ratio (n, / mountain) 2 = R. /R2 between the terminals T, , T,' and between T2 and T2.
The mismatch attenuation between RL and RL2 can be expressed as shown below.

すなわち、上述したのと同様に、第2図において、端子
T,−T,′から変成器側を見たインピーダンスZin
‘ま、Zin!y.十(多亭主登事至るキラ蔓芋となる
That is, as described above, in FIG. 2, the impedance Zin seen from the terminals T, -T,' to the transformer side
'Well, Zin! y. Ten (becomes a Kira vine potato that reaches the owner of the restaurant).

このインピーダンスの信号源6の内部抵抗R,に対する
不整合減衰量RL,は82=袴,6=4芋3′ とすると =2加増l≦;≧暑…≧≦暮芋三王舞三髪芋3暮1更に
82/8.=yとすると、:加増1≦…≦暮葦髪…苧王
手王叢…宏王手王;籍1=加増1≦三三暮葦篭三手王三
≧王≦三暮葦登≧篭三芋王;≧暮1=加増lを亨声筆考
≦蔓孝;壬生≧享偽≦王手)1=加増l2芸名(梓ラ¥
事事章三号令洋三壱等寿)}1(船) ”
‐【21となる。
The mismatch attenuation RL with respect to the internal resistance R of the signal source 6 of this impedance is 82 = Hakama, 6 = 4 Imo 3', then = 2 increase l≦; 3rd day 1st 82/8. If = y, then: Addition 1 ≦ ... ≦ Kure Ashi Hair ... Ramie King Te King Collection ... Hiroshi King Te King; Seki 1 = Add 1 ≦ San Migure Ashi Kago San Te Wang 3 ≧ King ≦ Mi Kure Ashito ≧ Kago Miimo Wang; ≧Ko 1 = Kasou l ≦Tsuruko; Mibu ≧ Kyo fake ≦ Ote) 1 = Kasai 12 Stage name (Azusa ¥
1 (Ship)”
-[It will be 21.

同様に端子L−T2′から変成器側を見たインピーダン
スゆutは勿山=ソ2′十(き;芋蔓≧亨羊主蔓;;と
なりこのときの整合減衰量RL2は、 RL2:2加。
Similarly, the impedance when looking from the terminal L-T2' to the transformer side is Mukuzan = So2'0 (ki; Imo Tsuri ≧ 亨 茨子 Tsuri;;; and the matching attenuation RL2 at this time is RL2:2 addition. .

g1隻三菱羊,=2ol。g1 Mitsubishi sheep, = 2ol.

g1(受;美≧言挙者辛登主ラギ芋蔓葦竿十(¥三十葺
き挙手羊宇蔓葦手),=2ol増l≦g倉重≧務牛8舞
≦髪生;叢1=2010g1宅三三壬暑3≦暑芋6叢≧
篭芋毒暮1=2mogl≦;王手暮導章白舎≧王≦;三
壬暑号墓王≦三王袋≧墓1=2。.増,2芋,隼・等毒
≧号事幸羊毛筋竺芸舎発}l(船) .・脚と
なる。■,湖式よりRL,RL2が最大値となる条件は
RLについては6.=(1−P,XI+昼,y) 8,(1十y) RZについては 62=q+8,XI−3,y) 8,(1十y) となる。
g1 (receiving; beauty ≧ speech person Shintoshu ragiimo vine reed pole ten (¥30 thatched raised hands sheep utsuri reed hand), = 2 ol increase l ≦ g Kurashige ≧ Ugyu 8 dance ≦ hair growth; plexi 1 = 2010 g1 Takusan Mitsumi 3≦6 piles of hot potatoes≧
Kagoimo Tokure 1 = 2 mogl ≦; Otegure Dosho Hakusha ≧ Wang ≦; Sanjinsha Go Tomb King ≦ San Wang Bag ≧ Tomb 1 = 2. .. Increase, 2 potatoes, Hayabusa, etc. Toxic ≧ Issued by Hyougejijikugeisha}l (ship).・Becomes the legs. ■The conditions for RL and RL2 to reach their maximum values are 6. = (1-P, XI + noon, y) 8, (10 y) For RZ, 62 = q + 8, XI-3, y) 8, (10 y).

従ってy=1すなわち8.≠B2で、同一の6において
RL,,RLは同時に最大値を取るが8,≠82では同
時に最大値を取らない。そこで8,=82でRL,=R
Lとなる条件を求めるにはl2十多才…;毒≧三法事手
,竺毒舎着生毒≧三矛)}l=,2壱鳥梓王;三王者雫
三羊毛昼交¥三宅亭≠寿)}1=
‐‐‐【4’が成り立つ条件を求めればよい。
Therefore, y=1 or 8. ≠B2, RL and RL simultaneously take the maximum value at the same 6, but do not take the maximum value at the same time at 8 and ≠82. So 8,=82 and RL,=R
To find the conditions for L, l20 versatility...; Poison ≧ Sanhojite, Shiku Poison Epiphytic Poison ≧ Three Spears)} l =, 2 Ichi Bird Azusa King; ≠ Kotobuki)}1=
--- Find the conditions under which [4' holds.

8,≠82 すなわちy≠1であることから‘4ー式よ
りRL=RL2を満たす6。
8,≠82 That is, since y≠1, RL=RL2 is satisfied from equation '4-6.

とすると8C=塚筈糸 となる。Then, 8C = Tsukazuito becomes.

以上から第2図において静電シールド4の両端子9,1
0間にを接続すれば2次巻線3の両側端子T2,T2′
間の不整合彰或衰量RLは最大値となる。
From the above, both terminals 9 and 1 of the electrostatic shield 4 in FIG.
0, both terminals T2 and T2' of the secondary winding 3
The amount of mismatching increase or decrease RL between them becomes the maximum value.

またッ=1すなわち、y,=y2(n./山)2をほぼ
満たす変成器においてはR3=季も‐−y.}(字)2
−y3 を接続すれば端子T,,T,′間、端子T2,T2′間
の不整合減衰量RL,RL2は同時に最大値となる。
In addition, in a transformer that almost satisfies y,=y2(n./mountain)2, R3=ki is also---y. } (character) 2
-y3, the mismatch attenuation amounts RL, RL2 between the terminals T, , T,' and between the terminals T2, T2' simultaneously reach their maximum values.

更にB,≠82、すなわちy≠1の場合において静電シ
ールドの両側端子9,10間にを接続すれば1次巻線2
の両側端子T,,T,′間の不整合減衰量RLは最大値
となり、 汐R3={R亭−yび2(n./−
)21(1′n・ア−y3y・十y2(n,/n2)2
を接続すれば1次巻線2の両側端子T,,T,′間およ
び2次巻線3の両側端子L,Q′間の不整合減衰量RL
,,RL2は等しい値をとる。
Furthermore, in the case of B,≠82, that is, y≠1, if the terminals 9 and 10 on both sides of the electrostatic shield are connected, the primary winding 2
The mismatch attenuation RL between the terminals T, , T, and ' on both sides becomes the maximum value, and R3={Rtei-y and 2(n./-
)21(1'n・A-y3y・10y2(n,/n2)2
If you connect , the mismatch attenuation RL between both terminals T, , T, ' of primary winding 2 and between terminals L, Q' of secondary winding 3 will be
,,RL2 take equal values.

しかし、RL,RLは最大値とならないことは明らかで
ある。第3図に■,糊式のB,,yおよび6をパラメー
タとして数値計算をした一例が示されている。
However, it is clear that RL and RL do not reach their maximum values. FIG. 3 shows an example of numerical calculation using parameters B, , y, and 6 of the glue formula.

本図において曲線Aは8,=0.1,y=1.0の場合
にはRL(〒RL2)を示し、曲線Bは8,=0.1,
y=1.3の場合のRL、曲線Cは曲線8と同一条件の
場合のRLを示す。本図から明らかなように曲線Aは6
。で、曲線Bは6,で、曲線Cは62で夫々極を持つ。
尚、曲線BとCは6。でRL=RLとなることが判る。
第1図の従来の変成器回路の場合の不整合減衰量値で本
値より高い値を示すよう6を設定すればよいことが判る
。すなわち、‘11,■および【3}式から2十6,(
1十y)+(1/6){(1十8,XI+B,y)}
2 …■81
(1十y)‐(1/6){(1‐8,xl+8,y)}
>1十肉中打或いは2裏舎洋ラ≧亨#毒気)毛苧宅筋
竺毒草士気)}〉・十8.(≧+y) ‐‐‐
【61を満たすような6を設計すればよい。
In this figure, curve A shows RL (〒RL2) when 8,=0.1, y=1.0, and curve B shows 8,=0.1,
Curve C shows RL when y=1.3 and curve C shows RL under the same conditions as curve 8. As is clear from this figure, curve A is 6
. The curve B has a pole at 6, and the curve C has a pole at 62.
In addition, curves B and C are 6. It can be seen that RL=RL.
It can be seen that 6 should be set so that the mismatch attenuation value in the case of the conventional transformer circuit shown in FIG. 1 is higher than this value. That is, from '11,■ and formula [3}, we get 26, (
10y) + (1/6) {(118,XI+B,y)}
2...■81
(10y)-(1/6) {(1-8,xl+8,y)}
>10 Meat Medium Hit or 2 Urasha Yora ≧ Toru #Miku Qi) Mamochi Yakusuji Poison Grass Morale)}〉・18. (≧+y) ---
It is sufficient to design 6 that satisfies [61].

‘5’式からの6を6,′、(6}式からの6を82′
とると8,≧0.y≧0,6,,62>0であることか
ら、6.′>(1十碁三(羊羊{ブ;;孝三声者三生気
y)} ‐‐‐【7)62′>
6 from the '5' formula is 6,', 6 from the (6} formula is 82'
If taken, 8, ≧0. Since y≧0,6,,62>0, 6. ′> (10 Go 3 (Yep sheep {bu;; Kosan voice person Sanseiki y)} --- [7) 62'>
.

十3,){(1十8,y)−B,2y(1十y)}
…■8,(
1十y){2十8,(1十y)}となる。
13,) {(118,y)-B,2y(10y)}
...■8,(
10y) {218, (10y)}.

6.′と62′の大小関係を比較する。6. Compare the magnitude relationship between ' and 62'.

すなわち、‘九脚式から △=(1十8,y){(1十B,)−B,2(1十y)
}一(1十81){(1十Ply)−B12y(1十y
.・・【9) が零より大きいか、小さいかを調べればよい。
That is, from the nine-legged formula, △ = (118, y) {(10B,) - B, 2 (10y)
}One (1181) {(10Ply) - B12y (10y
.. ...[9] Check whether is larger or smaller than zero.

‘91式を解くと△=8,2(y十1)(y−1) となることからy>1で6,′>62′,y=1で6,
′=62′,y<1で6,′<62′となる。
Solving equation '91 gives △=8,2(y11)(y-1), so 6 for y>1, 6 for y=1,
'=62', y<1, and 6,'<62'.

そこでこの8,′,62′の内の大きい方を設定すれば
第1図の変成器回路以上の不整合減衰量RL,,RL2
が得られることが判る。例えば3図の曲線B,Cに相当
する8,=0.1,y=1.3の場合、y>1、である
ことから6,′に相当する条件を設定すればよい。一方
、抵抗11を付加することによってどの程度動作減衰量
特性が劣下するかを調べると今、第2図の回路で負荷抵
抗7に供給される電力をP1、また、第1図の回路で変
成器8が理想変成器であると仮定した場合の負荷抵抗7
に供給される電力をPmaxとすると動作減衰量山は山
=.o・0gーP辛苦三1(dB)‐‐‐で定義される
Therefore, by setting the larger of these 8,', and 62', the mismatch attenuation RL, RL2 is greater than the transformer circuit shown in Figure 1.
It turns out that is obtained. For example, in the case of 8,=0.1 and y=1.3, which correspond to curves B and C in FIG. 3, since y>1, a condition corresponding to 6,' may be set. On the other hand, when we examine how much the operational attenuation characteristics deteriorate by adding the resistor 11, we find that the power supplied to the load resistor 7 in the circuit of FIG. Load resistance 7 assuming that transformer 8 is an ideal transformer
If the power supplied to is Pmax, the peak of the operating attenuation is peak =. Defined as: o・0g-PKinkusan1 (dB).

この定義に基づき第2図の動作減衰量Nを求めると山=
2010g〔1十季{81(1十y)+・/6(1十8
,)(1十8,y)〕(船) …{10となる。比し・
8・=台,y=82/8,=害,6=(R3′十y3′
)R,とする。
Based on this definition, when calculating the motion attenuation N in Figure 2, the mountain =
2010g [10 seasons {81 (10 y) + /6 (18
, ) (118, y)] (ship) ...{becomes 10. Comparison/
8 = base, y = 82/8, = harm, 6 = (R3' + y3'
)R,.

式のB,,yおよび6をパラメータとして一例について
動作減衰量を数値計算すると第3図のようになる。本図
で曲線DはB,=0.1,y=1.の麦合、曲線Eは8
,=0.1,ッ=1.3の場合の山を示す。本図から明
らかなように6→的のAIが付加巻線を付加しない場合
の動作減衰量の値であることから本発明によれば動作減
衰量は僅かながら増大することがわかる。しかし、動作
減衰量Nを若干増大させることによって、不整合減衰量
RLを大中に改善できる。例えば、第3図の曲線B,C
およびEから明らかなように、AIを約ldB増大させ
ることに対してRL,,RLを約33B改善することが
できる。以上述べたように本発明によれば1次側巻線と
2次側巻線との間の静電シールドを有効に活用すること
により動作減衰量をやや犠牲にしても不整合減衰量を大
中に改善した変成器回路を得ることができる。
When the amount of operational attenuation is numerically calculated for an example using B, y and 6 in the equation as parameters, the result is as shown in FIG. In this figure, curve D is B,=0.1,y=1. , curve E is 8
,=0.1, t=1.3. As is clear from this figure, since the AI of 6→mark is the value of the operating attenuation when no additional winding is added, it can be seen that according to the present invention, the operating attenuation increases slightly. However, by slightly increasing the operational attenuation amount N, the mismatch attenuation amount RL can be significantly improved. For example, curves B and C in Figure 3
As is clear from and E, it is possible to improve RL, , RL by about 33B for increasing AI by about 1 dB. As described above, according to the present invention, by effectively utilizing the electrostatic shield between the primary winding and the secondary winding, the amount of mismatch attenuation can be increased even if the amount of operational attenuation is slightly sacrificed. You can get an improved transformer circuit inside.

なお、本発明は上記実施例に限定されることなく、1次
巻線2、および2次巻線3の片側端子を非接地とした変
成器や、どちらか一方の巻線の片側端子のみ接地した変
成器に対しても同様に実現できる。
Note that the present invention is not limited to the above-mentioned embodiments, and can be applied to a transformer in which one terminal of the primary winding 2 and the secondary winding 3 is not grounded, or a transformer in which only one terminal of one of the windings is grounded. It can be similarly realized for a transformer that is

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の変成器の回路図、第2図aは本発明の一
実施例を示す回路図で、第2図bはその等価回路図であ
る。 第3図は本発明の改善効果を示す特性図、第4図aおよ
びbは第1図の等価回路を示す回路図である。第2図に
おいて、1……磁心、2・・・・・・1次巻線、3・・
・・・・2次巻線、4・・…・静電シ−ルド。 第’図多?図 豹2図 豹乙図 弟4留日
FIG. 1 is a circuit diagram of a conventional transformer, FIG. 2a is a circuit diagram showing an embodiment of the present invention, and FIG. 2b is an equivalent circuit diagram thereof. FIG. 3 is a characteristic diagram showing the improvement effect of the present invention, and FIGS. 4a and 4b are circuit diagrams showing the equivalent circuit of FIG. 1. In Fig. 2, 1...magnetic core, 2...primary winding, 3...
...Secondary winding, 4...Electrostatic shield. No. 'Figure many? Illustration Leopard 2 Illustration Leopard Etsu Illustration Younger Brother 4 Ruiji

Claims (1)

【特許請求の範囲】 1 1次巻線と2次巻線間にほぼ巻巾に等しい導電箔を
1回だけ巻回して構成された静電シールドを有する変成
器回路において、1次巻線の巻数に対する前記2次巻線
の巻数比をN_1、前記1次巻線側の電源内部抵抗をR
_1、前記2次巻線側の負荷抵抗をR_2とするときN
_1^2=(R_2)/(R_1)を実質的に満たすと
ともに前記1次巻線の直流抵抗値をγ_1、2次巻線の
直流抵抗値をγ_2、前記導電箔の直流抵抗をγ_3、
前記1次巻線の巻数の逆数をN_2とするとき▲数式、
化学式、表等があります▼ または ▲数式、化学式、表等があります▼ の条件を満たす抵抗R_3で前記導電箔の巻き始め端と
巻き終り端とを終端とすると共に前記導電箔の巻き始め
端または巻き終り端のいずれか1端を接地するようにし
たことを特徴とする変成器回路。
[Claims] 1. In a transformer circuit having an electrostatic shield configured by winding a conductive foil whose width is approximately equal to the winding width only once between the primary winding and the secondary winding, The turn ratio of the secondary winding to the number of turns is N_1, and the internal resistance of the power supply on the primary winding side is R.
_1, when the load resistance on the secondary winding side is R_2, N
_1^2=(R_2)/(R_1) is substantially satisfied, and the DC resistance value of the primary winding is γ_1, the DC resistance value of the secondary winding is γ_2, the DC resistance of the conductive foil is γ_3,
When the reciprocal of the number of turns of the primary winding is N_2, ▲ Formula,
There are chemical formulas, tables, etc. ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. A transformer circuit characterized in that one of the ends of the winding is grounded.
JP2572277A 1977-03-08 1977-03-08 transformer circuit Expired JPS6019647B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2572277A JPS6019647B2 (en) 1977-03-08 1977-03-08 transformer circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2572277A JPS6019647B2 (en) 1977-03-08 1977-03-08 transformer circuit

Publications (2)

Publication Number Publication Date
JPS53110029A JPS53110029A (en) 1978-09-26
JPS6019647B2 true JPS6019647B2 (en) 1985-05-17

Family

ID=12173683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2572277A Expired JPS6019647B2 (en) 1977-03-08 1977-03-08 transformer circuit

Country Status (1)

Country Link
JP (1) JPS6019647B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361072U (en) * 1989-10-18 1991-06-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0361072U (en) * 1989-10-18 1991-06-14

Also Published As

Publication number Publication date
JPS53110029A (en) 1978-09-26

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