JPS60195853A - Microwave ion source - Google Patents
Microwave ion sourceInfo
- Publication number
- JPS60195853A JPS60195853A JP59049064A JP4906484A JPS60195853A JP S60195853 A JPS60195853 A JP S60195853A JP 59049064 A JP59049064 A JP 59049064A JP 4906484 A JP4906484 A JP 4906484A JP S60195853 A JPS60195853 A JP S60195853A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ion source
- boron
- microwave
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000000284 extract Substances 0.000 claims abstract description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910015900 BF3 Inorganic materials 0.000 claims abstract 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 48
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007423 decrease Effects 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 21
- 239000002244 precipitate Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- -1 compound ions Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002483 hydrogen compounds Chemical class 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 208000035859 Drug effect increased Diseases 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はマイクロ波イオン源の性能向上に係り。[Detailed description of the invention] [Field of application of the invention] The present invention relates to improving the performance of microwave ion sources.
特にＢＦｓ又はＢ ＣＱ ３ガスを導入してＢ＋ビーム
を長時間、安定に取得するに好適なマイクロ波イオン源
に関する。In particular, the present invention relates to a microwave ion source suitable for stably obtaining a B+ beam for a long time by introducing BFs or B CQ 3 gas.
従来のマイクロ波イオン源の構造を第１図に示す。マイ
クロ波イオン源は、マイクロ波を伝播する導波管である
矩形導波管２ａ、２ｂ、リッジ導波管構造を形成するリ
ッジ電極４．リッジ電極４間に設けられたボロンナイト
ライド製の放電箱５、及びイオンビーム９を引出す引出
し電極系７ａ。The structure of a conventional microwave ion source is shown in FIG. The microwave ion source includes rectangular waveguides 2a and 2b that are waveguides for propagating microwaves, and a ridge electrode 4 that forms a ridge waveguide structure. A discharge box 5 made of boron nitride provided between the ridge electrodes 4 and an extraction electrode system 7a for extracting the ion beam 9.
７ｂ、７ｃで構成される。さらに、放電箱５にはコイル
８の励磁で発生する軸方向磁場が印加され、試料ガスが
導入バイブロを通し導入される。第２図に放電箱の詳細
を示す、第１図のイオン源において、半導体用イオン打
込みで用いられるＰ＋（リン）ＩＡｌｌ”（ヒ素）イオ
ン等のビームを得る場合、放電ガスには水素化合物であ
るＰ Ｈ３（ホスフィン）、Ａ８Ｈ３（アルシン）等が
用いられる。この場合、Ｐ”、Ａｓ＋イオンビームは長
時間、安定に引出せる。しかし、半導体用のイオン打込
みで必要とするＢ＋ビームを得るため、ＢＦ３ガスを導
入すると、以下の問題点が発生し、長時間にわたり大電
流イオンビームを安定に取得することは困難である。す
なわち、
（１）イオンビーム引出し開口部（第１図中、１２の部
分）での析出物の堆積
（２）放電箱５内の析出物の堆積
が発生する。（１）があると、開口部面積が減少するた
め引出しビーム電流の減少を引きおこす。Consists of 7b and 7c. Further, an axial magnetic field generated by excitation of the coil 8 is applied to the discharge box 5, and a sample gas is introduced through the introduction vibro. When using the ion source shown in Figure 1, which shows details of the discharge box in Figure 2, to obtain a beam such as P+ (phosphorus) IAll'' (arsenic) ions used in semiconductor ion implantation, the discharge gas contains hydrogen compounds. Certain PH3 (phosphine), A8H3 (arsine), etc. are used. In this case, P", As+ ion beams can be extracted stably for a long time. However, when BF3 gas is introduced to obtain a B+ beam required for ion implantation for semiconductors, the following problems occur, and it is difficult to stably obtain a large current ion beam over a long period of time. That is, (1) deposition of precipitates at the ion beam extraction opening (portion 12 in FIG. 1); and (2) deposition of precipitates within the discharge box 5. (1) causes a decrease in the extraction beam current because the aperture area decreases.
ちなみに、Ｂ Ｆ ｓガスを導入した実験によれば、約
４時間のイオン源の運転後、開口部面積は約半分になる
。一方、（２）が起ると、析出物がしばしば、はく離す
るため、プラズマ状態が不安定になる。また、はく離物
質が電ｔ１７ｂをたたき、これから発生する二次電子が
火種になって、正の高電圧が印加された電極７ａと、負
の高電圧が印加された電極７ｂの間で、異常放電が発生
した。このため、安定にビームを得ることは困難であっ
た。Incidentally, according to an experiment in which B F s gas was introduced, the opening area was reduced to about half after operating the ion source for about 4 hours. On the other hand, when (2) occurs, the precipitates often separate, making the plasma state unstable. In addition, the peeling substance strikes the electric current t17b, and the secondary electrons generated from this become a spark, causing an abnormal discharge between the electrode 7a to which a positive high voltage is applied and the electrode 7b to which a negative high voltage is applied. There has occurred. For this reason, it was difficult to obtain a stable beam.
ＢＦ３又はＢ ＣＱ ３ガス使用の時にのみ特徴的に析
出が発生する理由としては、マイクロ波放電で発生する
フッ素又は塩素原子が化学的に極めて活性であるため、
放電箱の材質であるボロンナイトライド１３を腐蝕、解
離するためと考えられる。The reason why precipitation characteristically occurs only when using BF3 or B CQ3 gas is that fluorine or chlorine atoms generated by microwave discharge are chemically extremely active.
This is thought to be due to corrosion and dissociation of boron nitride 13, which is the material of the discharge box.
事実、析出物を物理分析したところ、イオン化箱構造材
として使用しているボロンナイトライドであることが同
定された。この様な析出物の発生を防ぐため、放電箱を
熱絶縁構造とし、その温度を上げ、析出物を熱解離、あ
るいは蒸発させる工夫が有効である。しかしながら、放
電箱の熱絶縁に対する構造上の制約から、温度上昇にも
限度がある（８００〜９００℃位）、シたがって、熱絶
縁法だけで、実用上、問題とならないレベルにまで、析
出量を抑えることは、困難であった。In fact, physical analysis of the precipitate revealed that it was boron nitride, which is used as a structural material for the ionization box. In order to prevent the occurrence of such precipitates, it is effective to provide the discharge box with a thermally insulating structure and raise its temperature to thermally dissociate or evaporate the precipitates. However, due to structural constraints on the thermal insulation of the discharge box, there is a limit to the temperature rise (approximately 800 to 900°C).Therefore, thermal insulation methods alone can reduce precipitation to a level that does not pose a practical problem. It was difficult to keep the amount down.
本発明の目的は、マイクロ波イオン源にＢＦ３或いはＢ
ＣＲ３ガスを導入し、Ｂ＋ビームを得るにあたり、長
時間、安定にビームを引出すため、放電箱内に析出物が
付かないイオン源を提供することにある。The object of the present invention is to add BF3 or B to a microwave ion source.
The object of the present invention is to provide an ion source that does not cause deposits inside the discharge box in order to stably extract the beam for a long time when introducing CR3 gas and obtaining a B+ beam.
磁場中のマイクロ波放電で生成するプラズマの利用分野
としては、イオン源プラズマへの応用の他、このプラズ
マによるＳｔ（シリコン等のエツチング法がある。マイ
クロ波プラズマエツチングの技術によれば、一般に酸素
ガスの混入により。Application fields of plasma generated by microwave discharge in a magnetic field include application to ion source plasma, as well as etching of St (silicon, etc.) using this plasma.According to microwave plasma etching technology, oxygen Due to gas contamination.
エツチング速度が低下することが知られている。It is known that the etching speed decreases.
また、マイクロ波イオン源において、ＢＦ３ガスを導入
してＢ＋ビームを引出す場合、真空容器内の残留ガスで
あるＨ２Ｏが多いと、酸素を含んだ化合物イオンＢＯ”
、ＢＯＦ＋イオン等が比較的多く発生検知されること
がわかっている。以上のことから、マイクロ波イオン源
に０２ガスを積極的に混入させれば、放電箱材質のＢＮ
のエツチングが押えられると同時に、解離したＢＮ分子
がＢＯ”、ＢＯＦ＋等に変わり、析出が防止できると予
想される。また析出物が仮に発生しても、この析出物が
ＢＯ” 、ＢＯＦ＋の形で逃げていく′！Ｊ）ら、析出
速度の著しい減少が期待できる。なお、Ｂ＋のｍＡ級の
イオンビームを得るイオン源としては、熱フィラメント
による低電圧アーク放電を利用したイオン源がある。こ
の様なイオン源でもＢＦ３ガスが使われる。一方、熱フ
イラメン１−は酸素ガスで激しく腐蝕されるため、安定
なり＋ビーム取得を目的として酸素ガス（０２）を導入
しても長時間動作は期待できない、この意味で。In addition, in a microwave ion source, when introducing BF3 gas and extracting a B+ beam, if there is a large amount of H2O, which is the residual gas in the vacuum chamber, compound ions containing oxygen BO"
, BOF+ ions, etc. are known to be generated and detected in relatively large numbers. From the above, if 02 gas is actively mixed into the microwave ion source, BN of the discharge box material can be
At the same time as the etching is suppressed, the dissociated BN molecules change to BO'', BOF+, etc., and it is expected that precipitation can be prevented.Also, even if a precipitate occurs, this precipitate will be in the form of BO'', BOF+, etc. And run away'! J), a significant decrease in the precipitation rate can be expected. Note that as an ion source for obtaining a B+ mA class ion beam, there is an ion source that utilizes low voltage arc discharge using a hot filament. BF3 gas is also used in such an ion source. On the other hand, since the thermal filament 1- is severely corroded by oxygen gas, long-term operation cannot be expected even if oxygen gas (02) is introduced for the purpose of obtaining a stable + beam.
０２ガス導入は、熱フィラメントを含まなｔ）マイクロ
波イオン源に特徴的に活用できる手法である。The 02 gas introduction is a method that can be uniquely utilized for t) microwave ion sources that do not include a hot filament.
なお、本発明の概要説明では、酸素ガスを代表例にとっ
たが、硼素と反応して容易に化合物を形成すると考えら
れるガス、例えばＨ２ガスなどでも同様に、析出物の減
少効果が期待できる。Although oxygen gas is used as a representative example in the general explanation of the present invention, the same effect of reducing precipitates can be expected with gases that are thought to react with boron and easily form compounds, such as H2 gas. .
以下１本発明の一実施例を第３図により説明する。図で
はガス導入バイブロに、リークバルブ１４を数個け、Ｂ
Ｆ３ガスと０２ガスを混入した。An embodiment of the present invention will be described below with reference to FIG. In the figure, several leak valves 14 are installed in the gas introduction vibro.
F3 gas and 02 gas were mixed.
Ｏｚガスの混入量を５％、１０％、２０％にしたところ
、０２ガスの濃度に比例して引出されるイオンビームに
含まれるＢ＋の割合がやや減少する傾向があるものの、
放電箱５内やイオンビーム出ロ開ロ部１２には析出物は
観測されなかった。その結果、イオン源から引出された
ビームを扇形磁場形質量分離器で質量分離することによ
り、６０ｋｅＶ、４ｍＡ以上のＢ＋ビームが４時間以上
にわたって安定に取得できた。０２濃度としてはＢ Ｆ
ｓガス圧の０．１％から効果が現われはじめ、Ｏ２濃
度の増加でその効果は増大した。When the amount of Oz gas mixed was set to 5%, 10%, and 20%, the proportion of B+ contained in the extracted ion beam tended to decrease slightly in proportion to the concentration of 02 gas.
No precipitates were observed inside the discharge box 5 or in the ion beam exit opening 12. As a result, by mass-separating the beam extracted from the ion source using a fan-shaped magnetic field mass separator, a B+ beam of 60 keV and 4 mA or more was stably obtained for more than 4 hours. 02 concentration is B F
The effect began to appear from 0.1% of the s gas pressure, and the effect increased as the O2 concentration increased.
プラズマ中では種々の原子、分子イオンの発生があるほ
か、化学的に活性な、中性の原子２分子が多量に発生す
る。その量や成分比は、マイクロ波電力、温度、ガス圧
等により複雑に変化する。In addition to the generation of various atoms and molecular ions in plasma, a large amount of two chemically active and neutral atoms are generated. The amount and component ratio vary in a complicated manner depending on microwave power, temperature, gas pressure, etc.
したがってＯｚガスの導入により析出物のない放電維持
が可能となった理由については、今後、詳細な化学的解
析を行う必要がある。Therefore, it is necessary to conduct a detailed chemical analysis in the future as to why the introduction of Oz gas made it possible to maintain a discharge without any precipitates.
第４図は、本発明の別の実施例を説明する図である。第
４図では、ＢＦ３ガスと０２ガスを別の導入パイプを通
して放電箱内に導入したものである。本実施例でも第３
図の実施例と同様に、析出物の見られない安定なり＋ビ
ーム取得が実現できた。FIG. 4 is a diagram illustrating another embodiment of the present invention. In FIG. 4, BF3 gas and 02 gas are introduced into the discharge box through separate introduction pipes. In this example, the third
As in the example shown in the figure, stable beam acquisition with no visible precipitates was achieved.
以上、第３図ないし第４図の実施例ではそれぞれ２個の
ニードルバルブを用いてガスを混合したが、初めから混
合されたガスを充填したボンベを用いれば第１図のよう
に一つのニードルバルブを通してガスを導入できること
は明らかである。As mentioned above, in the embodiments shown in Figs. 3 and 4, two needle valves were used to mix the gases, but if a cylinder filled with the mixed gas from the beginning is used, one needle valve is used as shown in Fig. 1. It is clear that gas can be introduced through the valve.
この他、ＢＦ３又はＢ ＣＱ ｓガスに混入させるガス
として、酸素を含むガス、例えばＣＯ２を用いた時も、
酸素ガス導入の場合と同様の効果が得られた。また分子
式中に、酸素を原子を含むガスを二種類以」二混合させ
た時も、同様に安定なり＋ビーム取得が行なえた。とこ
ろで、Ｂの化合物の中では、８２Ｈ８等の水素化合物が
比較的安定に存在することが知られている。したがって
、Ｈ２ガスを混入させれば、反応性の水素ラジカル粒子
が析出物等と反応し、析出減少効果が期待できる。In addition, when a gas containing oxygen, such as CO2, is used as a gas to be mixed with BF3 or B CQ s gas,
The same effect as in the case of oxygen gas introduction was obtained. Furthermore, when two or more types of gases containing oxygen atoms in the molecular formula were mixed, stability was achieved in the same way, and beam acquisition was possible. By the way, among the compounds of B, hydrogen compounds such as 82H8 are known to exist relatively stably. Therefore, when H2 gas is mixed, reactive hydrogen radical particles react with precipitates, etc., and an effect of reducing precipitation can be expected.
このため、ＢＦＩガスにＨ２ガスを混入して実験したと
ころ、放電箱内に析出物の発生しない安定なり＋ビーム
引出しが実現できた。For this reason, when we conducted an experiment by mixing H2 gas into the BFI gas, we were able to achieve stable beam extraction without the formation of precipitates in the discharge box.
本発明によれば、ＢＦ３又はＢＣＱ３ガス導入時に発生
する析出物の堆積を防止でき、４時間以上にわたって４
ｍＡ以上の従来にない大電流Ｂ＋ビームが安全に取得で
きた。半導体イオン打込み装置の生産ラインでの使用打
込み電流が現在２ｍＡ前後であることを考えると、本発
明により、大電流Ｂ１−打込みが実用レベルで初めて実
施可能となり、実用に供しその効果は著しく大である。According to the present invention, it is possible to prevent the deposition of precipitates that occur when introducing BF3 or BCQ3 gas, and
We were able to safely obtain a B+ beam with an unprecedentedly high current of more than mA. Considering that the implantation current used in the production line of semiconductor ion implantation equipment is currently around 2 mA, the present invention makes it possible to implement large current B1-implantation for the first time at a practical level, and the effect of the implementation is extremely large. be.
第１図は従来のマイクロ波イオン源を説明する図、第２
図はマイクロ波イオン源の放電部を説明する詳細図、第
３図は本発明に基づ〈実施例を説明する図、第４図は本
発明の別の実施例を説明する図である。
■・・・マグネトロン（マイクロ波発移振器）、２ａ。
２ｂ・・・矩形導波管、３・・・真空シール板、４・・
・リッジ電極、訃・・放電箱、６・・・ガス導入パイプ
、７ａ。
７ｂ、７ｃ・・・引出し電極系、８・・・ソレノイドコ
イル、９・・・イオンビーム、１０・・・碍子、１１・
・・絶縁物、１２・・・イオンビーム引出し開口部、１
３・・・ボロンナイトライド製放電箱、１４・・・ガス
リークバルブ。
児１ 口
箇 ２ 口
第３ 図Figure 1 is a diagram explaining a conventional microwave ion source, Figure 2 is a diagram explaining a conventional microwave ion source.
FIG. 3 is a detailed diagram illustrating a discharge section of a microwave ion source, FIG. 3 is a diagram illustrating an embodiment based on the present invention, and FIG. 4 is a diagram illustrating another embodiment of the present invention. ■...Magnetron (microwave oscillator), 2a. 2b... Rectangular waveguide, 3... Vacuum seal plate, 4...
- Ridge electrode, tail...discharge box, 6...gas introduction pipe, 7a. 7b, 7c... Extraction electrode system, 8... Solenoid coil, 9... Ion beam, 10... Insulator, 11.
...Insulator, 12...Ion beam extraction opening, 1
3... Boron nitride discharge box, 14... Gas leak valve. Child 1 Mouth 2 Mouth 3 Figure
Claims (1)
発生し、このプラズマからイオンビームを引出すマイク
ロ波イオン源において、放電ガスとして三弗化硼素（Ｂ
Ｆ３）又は三塩化硼素（ＢＣＱ：ｌ）を導入し、さらに
硼素と反応して化学物を作る微量のガスを混入させ、硼
素イオンビームを取出すことを特徴とするマイクロ波イ
オン源。 ２、特許請求の範囲第１項記載のマイクロ波イオン源に
おいて、混入ガスが酸素ガスであることを特徴としたマ
イクロ波イオン源。 ３、特許請求の範囲第１項記載のマイクロ波イオン源に
おいて、混入ガスが酸素を含むガス、例えばＧ Ｏｒ
ＣＯ２ｒ Ｎ ＯＨＮ ２０ ｔ Ｓ Ｏ２ｒＨｚＯ等
であることを特徴としたマイクロ波イオン源。 ４、特許請求の範囲第１項記載のマイクロ波イオン源に
おいて、ＢＦ２ガスに混ぜるガスが水素であることを特
徴としたマイクロ波イオン源。 ５、特許請求の範囲第１項記載のマイクロ波イオン源に
おいて、混入させるガスが２種類以上のガスを含む混合
ガスであることを特徴としたマイクロ波イオン源。[Claims] (1) In a microwave ion source that generates high-density plasma by microwave discharge in a magnetic field and extracts an ion beam from this plasma, boron trifluoride (B) is used as a discharge gas.
A microwave ion source characterized in that F3) or boron trichloride (BCQ:l) is introduced, a trace amount of gas that reacts with boron to form a chemical substance is mixed in, and a boron ion beam is extracted. 2. The microwave ion source according to claim 1, wherein the mixed gas is oxygen gas. 3. In the microwave ion source according to claim 1, the mixed gas is a gas containing oxygen, such as G Or
A microwave ion source characterized by being CO2r N OHN 20 t S O2rHzO, etc. 4. The microwave ion source according to claim 1, wherein the gas mixed with the BF2 gas is hydrogen. 5. The microwave ion source according to claim 1, wherein the gas to be mixed is a mixed gas containing two or more types of gas.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049064A JPS60195853A (en) | 1984-03-16 | 1984-03-16 | Microwave ion source |
| DE8585101560T DE3584105D1 (en) | 1984-03-16 | 1985-02-13 | ION SOURCE. |
| EP85101560A EP0154824B1 (en) | 1984-03-16 | 1985-02-13 | Ion source |
| KR1019850001084A KR920003156B1 (en) | 1984-03-16 | 1985-02-21 | Ion source |
| US06/711,824 US4658143A (en) | 1984-03-16 | 1985-03-14 | Ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049064A JPS60195853A (en) | 1984-03-16 | 1984-03-16 | Microwave ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60195853A true JPS60195853A (en) | 1985-10-04 |
| JPH0572053B2 JPH0572053B2 (en) | 1993-10-08 |
Family
ID=12820649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59049064A Granted JPS60195853A (en) | 1984-03-16 | 1984-03-16 | Microwave ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60195853A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237652A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Duoplasmatoron ion source |
| US6927148B2 (en) | 2002-07-15 | 2005-08-09 | Applied Materials, Inc. | Ion implantation method and method for manufacturing SOI wafer |
| US7064049B2 (en) | 2002-07-31 | 2006-06-20 | Applied Materials, Inv. | Ion implantation method, SOI wafer manufacturing method and ion implantation system |
| JP2019525381A (en) * | 2016-06-21 | 2019-09-05 | アクセリス テクノロジーズ， インコーポレイテッド | Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products |
| KR20200015527A (en) * | 2017-06-05 | 2020-02-12 | 액셀리스 테크놀러지스, 인크. | Hydrogen cavity gas when using aluminum iodide as ion source material |
-
1984
- 1984-03-16 JP JP59049064A patent/JPS60195853A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237652A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Duoplasmatoron ion source |
| US6927148B2 (en) | 2002-07-15 | 2005-08-09 | Applied Materials, Inc. | Ion implantation method and method for manufacturing SOI wafer |
| US7064049B2 (en) | 2002-07-31 | 2006-06-20 | Applied Materials, Inv. | Ion implantation method, SOI wafer manufacturing method and ion implantation system |
| JP2019525381A (en) * | 2016-06-21 | 2019-09-05 | アクセリス テクノロジーズ， インコーポレイテッド | Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products |
| KR20200015527A (en) * | 2017-06-05 | 2020-02-12 | 액셀리스 테크놀러지스, 인크. | Hydrogen cavity gas when using aluminum iodide as ion source material |
| JP2020522838A (en) * | 2017-06-05 | 2020-07-30 | アクセリス テクノロジーズ， インコーポレイテッド | Hydrogen cogas when aluminum iodide is used as the ion source material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572053B2 (en) | 1993-10-08 |
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