JPS60181610A - Measurement of film thickness - Google Patents

Measurement of film thickness

Info

Publication number
JPS60181610A
JPS60181610A JP3830584A JP3830584A JPS60181610A JP S60181610 A JPS60181610 A JP S60181610A JP 3830584 A JP3830584 A JP 3830584A JP 3830584 A JP3830584 A JP 3830584A JP S60181610 A JPS60181610 A JP S60181610A
Authority
JP
Japan
Prior art keywords
film thickness
deposited
substrate
film
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3830584A
Other languages
Japanese (ja)
Inventor
Yasuyuki Iwatani
岩谷　靖之
Eisaku Mori
森　栄作
Yoshifumi Minowa
美濃和　芳文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3830584A priority Critical patent/JPS60181610A/en
Publication of JPS60181610A publication Critical patent/JPS60181610A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

PURPOSE:To enable the measurement of the film thickness over the entire deposited surface in the measurement of the film thickness of a film deposited on a substrate by gauging the evaporation speed over the entire area of the deposited surface with a film thickness measuring sensor movable freely by a driver. CONSTITUTION:A crucible 2 is heated with a vacuum vessel 1 vacuum inside and a metal steam is jetted out to form a deposited film on a substrate 4. A shutter 6 prevents metal from evaporation on the substrate 4 during the measurement with a film thickness measuring sensor 3. The sensor 3 mounted on a support rod 7a is so arranged to be movable freely with a driving mechanism 7. Then, first, with the shutter 6 positioned in front of the deposited surface of the substrate 4, the sensor 3 is set at any position of the deposited surface with the driving mechanism 7 through the support rod 7a to measure the evaporation speed over the entire deposited surface. Subsequently, the shutter 6 is moved and metal is deposited on the substrate 4. Then, the deposited film thickness is measured over the entire deposited surface.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発１４１け、金属の蒸着膜の膜厚全測定する方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] This article 141 relates to a method for measuring the total thickness of a deposited metal film.

〔従来技術〕[Prior art]

従来の膜厚測定方法ケ第１図に示す。図において、＋Ｉ
＋は囃空答器、（２１１／′ｉ金属蒸肴のｆ質出口（２
ａ）？！するるつぼ、＋３１け＋＋ａ　＋＃測定センサ
で、水晶振ＩＷｊ式等を使用する。（４）け蒸着膜を形
成する基板である。第１図において、真空容器（１）の
内部全真空にしだ状態で、るつは（２）をＩＪＩＩ熱す
ることにより、るつぼ（２）内の蒸着金属の蒸気を基板
１４）に向けて噴出させる。クラスターイオンビームの
場合ｖｃけ、金属蒸気全イオン化して加速することで蒸
着特性を良くしている。基板゛４）には金属蒸気の蒸光
噛に応じて蒸着膜が形成される。この時、蒸気の噴出領
域内に設置された膜厚計には、蒸着ｍに応じた出力が得
られ、基板：４）に形成さｔｌる膜厚が測定できる。し
かし、膜厚計による測定は基板′４１の蒸着面の一端の
みの蒸着速度を測定するの与であり、蒸着面全体の評価
ができないことと、基板（４）内Ｖコ蒸看さｔｌない而
ができる欠点があった。A conventional method for measuring film thickness is shown in FIG. In the figure, +I
+ is a sound answering device, (211/'i f-quality outlet of metal steamer (2
a)? ! Use a quartz crystal IWj method, etc. with a crucible, +31ke++a +# measurement sensor. (4) A substrate on which a vapor-deposited film is formed. In FIG. 1, the vapor of the deposited metal in the crucible (2) is ejected toward the substrate 14) by heating the crucible (2) to a high temperature in a state where the interior of the vacuum container (1) is completely vacuumed. let In the case of a cluster ion beam, vapor deposition characteristics are improved by ionizing and accelerating all of the metal vapor. A vapor deposited film is formed on the substrate (4) in accordance with the evaporation of the metal vapor. At this time, the film thickness meter installed in the steam ejection region can obtain an output corresponding to the vapor deposition m, and can measure the film thickness tl formed on the substrate: 4). However, measurement using a film thickness meter only measures the deposition rate at one end of the deposition surface of the substrate (41), and it is not possible to evaluate the entire deposition surface. There was a drawback that it could be done.

〔発明の概要〕[Summary of the invention]

＼ この発明は基板に蒸着ざ力た蒸着膜の膜厚を、蒸着面全
域で蒸着速度の測定が０」能としたｄ艶厚センサを用い
ることで、蒸着面全体について膜厚の測定が可能なぺσ
厚測定方法を提供するものである。＼ This invention makes it possible to measure the thickness of a vapor-deposited film on the entire vapor-deposited surface by using a glossy thickness sensor that can measure the vapor deposition rate over the entire vapor-deposited surface. Nape σ
A method for measuring thickness is provided.

〔発明の婁篩例〕[Example of invention]

以下、笑施例を第２図で説明する。図において、Ｏｊか
ら＋４１ｔ′ｉ肩１図と同様であｈ　、　（５＋け膜厚
測定センサ（３）の出カケ真空容器＋１１から導出する
ためのケ−プル及び同センサｆ３＋の冷却用バイブのフ
レキシブルチューブ、（６）にＨＱ膜厚センサよるｔ１
゛測中に基板（４）に金属が蒸着するの全防止するため
のシャッター、（７）は膜厚センサ（３１の駆！＃機構
で、支持棒（ｙ８）−を介して膜厚センサ１３ンを支持
している。An example will be explained below with reference to FIG. In the figure, from Oj to +41t'i, shoulder 1 is the same as in Figure 1. Flexible tube, t1 by HQ film thickness sensor in (6)
゛Shutter to completely prevent metal from being deposited on the substrate (4) during measurement, (7) is the drive mechanism of the film thickness sensor (31), and the film thickness sensor 13 is connected to the film thickness sensor (31) via the support rod (y8). I support the organization.

次に作用について説明する。纂２図において、ＪＫ空容
器（１）内を真空状態にして、るつぼ（２１を加熱し金
属蒸気全噴出させ基板（４）に蒸楔膜全形成する場合に
、基板（４）の蒸右面のｎｉＪ而にシャッター（６）全
位置させた状態で膜厚センサ（３；と支持棒（７ａ）を
介して躯１１ｒｌＪ１幾構（７１に工す蒸着面の任意の
位置にセットし、蒸着膜ｊＷを測定することにより、蒸
着面金ＩＲ１の蒸着速度を測定し、その後、シャッター
　を移＋１νＩさせ、基板１４１に金属全蒸着させるこ
とＫＬす、蒸着面全体の蒸着膜厚音測定する。Next, the effect will be explained. In Figure 2, when the inside of the JK empty container (1) is in a vacuum state and the crucible (21) is heated to blow out all the metal vapor and form a vaporized film on the substrate (4), the vaporized right side of the substrate (4) Then, with the shutter (6) fully positioned, set it at any position on the vapor deposition surface of the body 11rlJ1 (71) via the film thickness sensor (3; and the support rod (7a), and measure the vapor deposition By measuring jW, the evaporation rate of gold IR1 on the evaporation surface is measured, and then the shutter is moved to +1νI to completely evaporate the metal onto the substrate 141, and the thickness of the evaporation film on the entire evaporation surface is measured.

〔発り］の効果〕[Effect of departure]

この発明によるさ、従来は蒸気の唄出饋域σ）一端にお
ける蒸着速度から基板の蒸着膜厚をめていたものが、蒸
着面の全面の蒸着速度から蒸着膜厚がめらねる工うにな
ったという効果がある。With this invention, the thickness of the evaporated film on the substrate was previously calculated based on the evaporation speed at one end of the vapor ejection area σ), but now the thickness of the evaporated film on the substrate can be calculated based on the evaporation speed over the entire surface of the evaporation surface. There is an effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の膜厚測定方法の構成図、第２図はこの発
明の一４！確例による構成図である。 図Ｋ　ｋ　イて、ｆｌ＋は真空容器、（２）はるつぼ、
１３）は膜厚測定センサ、゛４］ハ基板、（５１ハフレ
キシブルチユーブ、（６１けシャッター、１７）ｆｄ駆
割前機構示す。 なお、各図中、同−符ＪＰｊｔ／′ｉ同−又は相当部分
倉ボす。 代理人　大岩増雄Figure 1 is a block diagram of the conventional film thickness measurement method, and Figure 2 is part 4 of the present invention! It is a block diagram based on a definite example. Figure K k, fl+ is a vacuum container, (2) crucible,
13) shows the film thickness measurement sensor, 4) the substrate, 51 the flexible tube, 61 the shutter, and 17 the fd pre-cutting mechanism. A considerable portion is warehoused. Agent: Masuo Oiwa.

Claims (1)

【特許請求の範囲】[Claims] ｉｌ＋　真空中で金属蒸気ゲイオン比して、金属の蒸着
膜を形成する方法において、且記蒸看膜の膜厚を３）測
するセンサを蒸看面内で移＃　ｉ’Ｊ能な構造にして蒸
眉面全体の膜厚を測定するようにした膜厚測定方法。il+ In a method of forming a metal vapor deposition film in a vacuum using a metal vapor gion ratio, 3) a sensor for measuring the film thickness of the vaporization film is structured to be movable within the vaporization plane; A film thickness measurement method that measures the film thickness of the entire steamed eyebrow surface.
JP3830584A 1984-02-28 1984-02-28 Measurement of film thickness Pending JPS60181610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3830584A JPS60181610A (en) 1984-02-28 1984-02-28 Measurement of film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3830584A JPS60181610A (en) 1984-02-28 1984-02-28 Measurement of film thickness

Publications (1)

Publication Number Publication Date
JPS60181610A true JPS60181610A (en) 1985-09-17

Family

ID=12521583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3830584A Pending JPS60181610A (en) 1984-02-28 1984-02-28 Measurement of film thickness

Country Status (1)

Country Link
JP (1) JPS60181610A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808566B2 (en) * 2001-09-19 2004-10-26 Tokyo Electron Limited Reduced-pressure drying unit and coating film forming method
CN102373434A (en) * 2010-08-20 2012-03-14 日立造船株式会社 Vapor deposition device
CN103160798A (en) * 2013-02-26 2013-06-19 上海和辉光电有限公司 Device for detecting evaporation source and method
CN103789732A (en) * 2014-02-13 2014-05-14 上海和辉光电有限公司 Evaporator and evaporation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808566B2 (en) * 2001-09-19 2004-10-26 Tokyo Electron Limited Reduced-pressure drying unit and coating film forming method
CN102373434A (en) * 2010-08-20 2012-03-14 日立造船株式会社 Vapor deposition device
CN103160798A (en) * 2013-02-26 2013-06-19 上海和辉光电有限公司 Device for detecting evaporation source and method
CN103789732A (en) * 2014-02-13 2014-05-14 上海和辉光电有限公司 Evaporator and evaporation method

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