JPS6018006A - Monolithic mixer of microwave band - Google Patents
Monolithic mixer of microwave bandInfo
- Publication number
- JPS6018006A JPS6018006A JP12672783A JP12672783A JPS6018006A JP S6018006 A JPS6018006 A JP S6018006A JP 12672783 A JP12672783 A JP 12672783A JP 12672783 A JP12672783 A JP 12672783A JP S6018006 A JPS6018006 A JP S6018006A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- frequency
- fet
- band
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Networks Using Active Elements (AREA)
- Superheterodyne Receivers (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、衛星放送の受信機等において用いられるマ
イクロ波帯モノリシックミキサに関するものである。近
年１２ＧＨｚ 帯直接衛星放送システムが実現される見
通しとなった。このため各家庭に備える受信機において
も、１２ＧＨｚ 桁信号を１〜２ＧＨｚ 帯中間周波数
に変換するマイクロ波帯ミキサが必要とされる段階にな
った。このようなマイクロ波帯ミキサは、量産し価格の
低減を図るのにモノリシックＩＣ化することが望ましい
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave band monolithic mixer used in satellite broadcasting receivers and the like. In recent years, it is expected that a 12 GHz band direct satellite broadcasting system will be realized. For this reason, a microwave band mixer that converts a 12 GHz signal to a 1 to 2 GHz band intermediate frequency is now required in a receiver installed in each home. It is desirable to form such a microwave band mixer into a monolithic IC in order to mass produce it and reduce the cost.
通常マイクロ波帯モノリックＩＣはＱａＡｓ基板上に構
成する。しかし、ＧａＡｓの比誘′電率は１２．７程度
であるから、ＧａＡ３基板上のＩＧＨｚ における波長
は８．４ｃｍ程度ある。したがって、チップ寸法が２〜
３ｍｍ角であることが要求されるＧａＡｓマイクロ波帯
モノリシックＩＣでは、ＩＧＨｚ帝無損失整合回路をチ
ップ上に構成するのは極めて難かしい。そこで、ＧａＡ
３マイクロ波帯モノリックミキサにおいては１周波数の
高い信号周波数帯および局部発−周波数帯の回路には無
損失整合回路を用い周波数の低いＩＦ周波数帯の回路に
は抵抗回路を用いるのが一般である。ところが、ＩＦ周
波数帯回路に抵抗回路を用いた従来のＱａＡｓマイクロ
淵洋ノリシックミキサでは、能動素子のもつ入力容量の
影響で、中間周波数の高域遮断周波数が低く中間周波数
の帯域幅が狭いという欠点があった。Typically, a microwave band monolithic IC is constructed on a QaAs substrate. However, since the dielectric constant of GaAs is about 12.7, the wavelength at IGHz on the GaA3 substrate is about 8.4 cm. Therefore, the chip size is 2~
In a GaAs microwave band monolithic IC that is required to be 3 mm square, it is extremely difficult to construct an IGHz zero-loss matching circuit on the chip. Therefore, GaA
In a 3-microwave monolithic mixer, it is common to use a lossless matching circuit for the high signal frequency band and the local oscillation frequency band, and a resistor circuit for the low frequency IF frequency band circuit. be. However, in the conventional QaAs micro-Fuchyo Norithic mixer that uses a resistor circuit in the IF frequency band circuit, the high cutoff frequency of the intermediate frequency is low and the bandwidth of the intermediate frequency is narrow due to the input capacitance of the active element. There were drawbacks.
第１図は従来例のＱａＡｓマイクロ波帯モノリシックミ
キサの交流等価回路図である。信号入力端子２とデュア
ルゲー）ＦＥＴ１６の第一ゲート７との間には伝送線路
３および６から構成された信号周波数帯無損失整合回路
が設けられ、局部発振周波数入力端子１とデュアルゲー
）ＦＥＴ１６の第二ゲート８との間には伝送線路４およ
び５から構成された局部発振周波数帯無損失整合回路が
設けられている。デュアルゲートＦＥＴ１６のドレイン
電極９と並列抵抗１０（抵抗値Ｒ）を備えたシングルゲ
ートＦＥＴ１７のゲート電極１１とは接続され、シング
ルゲートＦＥＴ１７のドレイン電極１２には並列抵抗１
３が設けられている。１４は出力端子である。デュアル
ゲートＦＥＴ１６のゲート幅とシングルゲートＦＥＴＩ
７のゲート幅とは等しく共にＷである。図中にはシン
グルゲー）ＦＥＴ１７のもつ入力容量１５（容量値ＣＧ
）も示されている。FIG. 1 is an AC equivalent circuit diagram of a conventional QaAs microwave band monolithic mixer. A signal frequency band lossless matching circuit made up of transmission lines 3 and 6 is provided between the signal input terminal 2 and the first gate 7 of the dual-gauge FET 16, A local oscillation frequency band lossless matching circuit composed of transmission lines 4 and 5 is provided between the second gate 8 and the second gate 8 . The drain electrode 9 of the dual gate FET 16 and the gate electrode 11 of the single gate FET 17 having a parallel resistance 10 (resistance value R) are connected, and the drain electrode 12 of the single gate FET 17 has a parallel resistance 1.
3 is provided. 14 is an output terminal. Gate width of dual gate FET16 and single gate FETI
The gate widths of No. 7 and No. 7 are equal and both are W. In the figure, the input capacitance 15 (capacitance value CG
) are also shown.
第１図のモノリシックミキサの信号変換利得の周波数特
性は主として股間回路に工って決まる。The frequency characteristics of the signal conversion gain of the monolithic mixer shown in FIG. 1 are mainly determined by the crotch circuit.
すなわち、デュアルゲー）ＦＥＴＩ ６とその負荷イン
ピーダンスによって決まるＩＦ’帯での電圧利得（２）
１・＝２、□。。In other words, the voltage gain (2) in the IF' band determined by the dual-gauge) FETI 6 and its load impedance is 1.=2, □. .
で表わされる高域遮断周波数ｆＣより高い周波収帯声
ではＡｖ’ｄ ６ｄ１３／オクターブの周波数特性を持
。A voice with a frequency convergence higher than the high cutoff frequency fC, expressed by , has a frequency characteristic of Av'd 6d13/octave.
第２図に第１図の従来例のモノリシックミキサの信号変
換特性を示す。本図から、第１図の従来のマイクロ波帯
モノリシックミキサは、ＩＦ周波数を尺度とすると衛星
放送帯域１１．７〜１２．７ＧＨｚにおいてはは一６ｄ
Ｂ／オクターブの周波数特性を持っており、高域遮断周
波数ｆｃが低く、中間周波数帯域幅が狭いことが分る。FIG. 2 shows the signal conversion characteristics of the conventional monolithic mixer shown in FIG. From this figure, it can be seen that the conventional microwave band monolithic mixer shown in Fig. 1 has a frequency of -6 d in the satellite broadcasting band 11.7 to 12.7 GHz, using the IF frequency as a scale.
It can be seen that it has a frequency characteristic of B/octave, has a low high cutoff frequency fc, and has a narrow intermediate frequency bandwidth.
本発明の目的は、中間周波数の帯域幅が広いマイクロ波
帯モノリシックミキサの提供にある。An object of the present invention is to provide a microwave band monolithic mixer having a wide intermediate frequency bandwidth.
本発明によるマイクロ波帯モノリシックミキサの構成は
、第１のゲート電極には信号周波数帯無損失整合回路が
接続してあり第２のゲート電極には局部発振周波数帯無
損失整合回路が接続しであるデュアルゲー）ＦＥＴと、
このデュアルゲートＦ” Ｅ Ｔの出力端子にゲート電
極が接続しである一シングルゲー）ＦＥＴと、前記出力
端子と接地間に接続しである抵抗素子とを備えるマイク
ロ波モノリシックミキサにおいて、前記デュアルゲー）
ＦＥＴのゲート幅が前記シングルゲートＦＥＴのゲート
幅より大きいことを特徴とする。In the configuration of the microwave band monolithic mixer according to the present invention, a signal frequency band lossless matching circuit is connected to the first gate electrode, and a local oscillation frequency band lossless matching circuit is connected to the second gate electrode. A certain dual game) FET,
In a microwave monolithic mixer comprising a single-gate FET whose gate electrode is connected to the output terminal of the dual-gate F"ET, and a resistive element connected between the output terminal and ground, )
The gate width of the FET is larger than the gate width of the single gate FET.
このような本発明によれば、ＩＦ帯に抵抗容量結合回路
を用いても、所定周波数範囲内では信号変換利得が周波
数に依らず一定である。すなわち高域遮断周波数が高く
て中間周波数の帯域幅が広いマイクロ波モノリシックミ
キサが得られる。According to the present invention, even if a resistor-capacitive coupling circuit is used in the IF band, the signal conversion gain remains constant regardless of the frequency within a predetermined frequency range. In other words, a microwave monolithic mixer with a high high cutoff frequency and a wide intermediate frequency bandwidth can be obtained.
以下本発明を図面を参照して詳述する。The present invention will be described in detail below with reference to the drawings.
第３図は本発明の一実施例の交流等価回路図である。こ
の実施例では、デュアルゲー）ＦＥＴ２６のゲート幅は
ｋｗであり（ｋ＞１）、シングルゲ−）ＦＥＴのゲート
幅Ｗよりｋ倍広くなっている。FIG. 3 is an AC equivalent circuit diagram of an embodiment of the present invention. In this embodiment, the gate width of the dual-gate FET 26 is kw (k>1), which is k times wider than the gate width W of the single-gate FET.
このためデュアルゲー）ＦＥＴ２６の相互コンダクタン
スはｋｇｍ となる。また抵抗２０の抵抗値はＫに設定
されている。そこでこの実施例では、デュアルゲー）Ｆ
ＥＴ２６とその負荷インピーダンスによって決まるＩＦ
帯での電圧利得Ａ′Ｖは、と表わせる。（３）式におい
て高域遮断周波数ｆ′Ｃは。Therefore, the mutual conductance of the dual gate FET 26 is kgm. Further, the resistance value of the resistor 20 is set to K. Therefore, in this embodiment, dual game)
IF determined by ET26 and its load impedance
The voltage gain A'V in the band can be expressed as follows. In equation (3), the high cutoff frequency f'C is:
し
と表わせる。（３）式および（４）式の比較から明らか
なように本実施例においては高域遮断周波数を従来例の
ミキサのに倍にすることができる。It can be expressed as. As is clear from the comparison of equations (3) and (4), in this embodiment, the high cutoff frequency can be doubled as compared to the conventional mixer.
第４図は第３図の周波数特性図である（ただしに＝２と
したとき）。本図に示されたように、工Ｆ周波数の尺度
で高域遮断周波数は２倍になっているから、衛星放送帯
１１．７〜１２．７ＧＨｚにおいて、変換利得は周波数
に依らずほぼ一定である。FIG. 4 is a frequency characteristic diagram of FIG. 3 (when =2 is used). As shown in this figure, the high cutoff frequency is doubled on the scale of the engineering F frequency, so in the satellite broadcast band 11.7 to 12.7 GHz, the conversion gain is almost constant regardless of the frequency. be.
以上述べてきたように５本発明においては、デュアルグ
ー）ＦＥＴのゲート幅を〃グルゲートＦＥＴのゲート幅
のに倍（ｋ＞１）にするため。As described above, in the present invention, the gate width of the dual gate FET is twice the gate width of the dual gate FET (k>1).
段間に抵抗回路を用いても広い周波数帯域にわたって変
換利得を周波数に依らず一定とすることができる。そこ
で１本発明によれば、高域遮断周波数が高く、中間周波
数の帯域幅が広いマイクロ波帯モノリシックミキサが提
供できる。Even if a resistor circuit is used between the stages, the conversion gain can be made constant regardless of the frequency over a wide frequency band. Therefore, according to the present invention, it is possible to provide a microwave band monolithic mixer having a high high cutoff frequency and a wide intermediate frequency bandwidth.
第１図は従来例のマイクロ波帯モノリシックミキサの交
流等価回路図、＠２図は第１図のミキサの周波数特性図
、第３図は本発明の一実施例の交流等価回路図、第４図
は第３図の実施例の周波数の特性図である。
３．４，５，６・・・・・・伝送線路。
茅１回
茅２圀Figure 1 is an AC equivalent circuit diagram of a conventional microwave band monolithic mixer, Figure 2 is a frequency characteristic diagram of the mixer in Figure 1, Figure 3 is an AC equivalent circuit diagram of an embodiment of the present invention, and Figure 4 is an AC equivalent circuit diagram of a conventional microwave band monolithic mixer. The figure is a frequency characteristic diagram of the embodiment of FIG. 3. 3.4,5,6...transmission line. 1 x 2 pieces of grass
Claims (1)
続してあり第２のゲート電極には局部発振周波数帯無損
失整合回路が接続しであるデュアルゲートＦＥＴと、こ
のデュアルゲートＦＥＴの出力端子にゲート電極が接続
しであるシングルゲー）ＦＥＴと、前記出力端子と接地
間に接続しである抵抗素子とを備えるマイクロ波帯モノ
リシックミキサにおいて、前記デュアルグー）ＦＥＴの
ゲート幅が前記シングルゲートＦＥＴのゲート幅より大
きいことを特徴とするマイクロ波帯モノリシックミキサ
。A dual gate FET with a signal frequency band lossless matching circuit connected to the first gate electrode and a local oscillation frequency band lossless matching circuit connected to the second gate electrode, and an output of the dual gate FET. A microwave band monolithic mixer comprising a single gate FET having a gate electrode connected to a terminal thereof and a resistor element connected between the output terminal and ground, wherein the gate width of the dual gate FET is equal to the single gate FET. A microwave band monolithic mixer characterized by a gate width larger than that of an FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12672783A JPS6018006A (en) | 1983-07-12 | 1983-07-12 | Monolithic mixer of microwave band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12672783A JPS6018006A (en) | 1983-07-12 | 1983-07-12 | Monolithic mixer of microwave band |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6018006A true JPS6018006A (en) | 1985-01-30 |
| JPH0584084B2 JPH0584084B2 (en) | 1993-11-30 |
Family
ID=14942372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12672783A Granted JPS6018006A (en) | 1983-07-12 | 1983-07-12 | Monolithic mixer of microwave band |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018006A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5079506A (en) * | 1989-10-02 | 1992-01-07 | Samsung Electronics Co., Ltd. | Checking circuit for checking the normal operation of a sensor |
| JPH04365207A (en) * | 1991-06-13 | 1992-12-17 | Matsushita Electric Ind Co Ltd | Frequency conversion circuit |
-
1983
- 1983-07-12 JP JP12672783A patent/JPS6018006A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5079506A (en) * | 1989-10-02 | 1992-01-07 | Samsung Electronics Co., Ltd. | Checking circuit for checking the normal operation of a sensor |
| JPH04365207A (en) * | 1991-06-13 | 1992-12-17 | Matsushita Electric Ind Co Ltd | Frequency conversion circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0584084B2 (en) | 1993-11-30 |
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