JPS60178645A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent characteristics of a semiconductor IC substrate from deteriorating even under irradiation with radiation by providing a heat generation resistor to heat said substrate. CONSTITUTION:A container 1 is provided inside its main body 2 with the heat generation resistor 10 to heat the semiconductor IC substrate 5 to dissipate holes, trapped at the interface between the semiconductor substrate body 6 of the substrate 5 and oxide layers or films 8 and 9 (in case a semiconductor element 7 is an MOS type transistor, containing its gate insulation film) or in its neighborhood, out of the oxide layers or films 8 and 9, e.g. in a plurality or in a buried state. Thereby, when the resistors 10 provided in the container 1 are heated, the heat is conducted to the substrate 5 via container 1, resulting in heating the substrate 5.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductors that constitute a large number of semiconductor elements! !
A semiconductor integrated circuit board comprising a temporary body and an oxide layer or film formed within or on the semiconductor substrate body to constitute a semiconductor integrated circuit is housed in a container. (Related to the improvement of semiconductor devices that affect δ formation.

Background of the present invention Conventionally, in the case of such a semiconductor device, an external device as shown schematically in Fig. 1 has been used. ll! A semiconductor substrate body (not shown) and a semiconductor substrate body (not shown) and a t The structure in which the semiconductor integrated circuit board 5 constituting the CC semiconductor integrated circuit 18 is housed is shown by the oxide layer or pattern (not shown) formed on the semiconductor substrate main body, and , the semiconductor device (i circuit board 5 is surrounded by a dotted line as shown in FIG. 2)
'c Generally shown is a semiconductor element (collector region,
A bipolar transistor in which the base region, emitter region 1, base electrode, 1 mitter electrode, etc. are removed; the source region, the drain region, and the channel region and tunnel region between them are covered with silicon dioxide, for example. A semiconductor substrate main body 6 that constitutes a large number of MO8 type transistors, etc. with gate electrodes facing each other via a gate insulating film, and inside the semiconductor substrate main body 6, on its upper surface side, An IC is formed to separate a large number of semiconductor elements 7 from each other. An oxide layer or film 8 for element isolation made of silicon dioxide, for example, and a large number of semiconductor elements 7 and an oxide layer or film 8 are formed on a semiconductor substrate body 6. formed over 1
．． Similarly, a structure having an insulating or protective oxide layer or film 9 made of silicon dioxide, for example, is currently in use.

In the case of a conventional semiconductor device having this configuration, when it is mounted on a communication satellite or the like and used in outer space and is irradiated with radiation, the semiconductor integrated circuit board 5 is exposed to radiation through the container 5. and are exposed to that radiation.

In this way, when the semiconductor integrated circuit board 5 is irradiated with radiation, electron-hole pairs are generated in the oxide layer or films 8 and 9, and the electron-hole pairs move. Holes, whose speed is about 1/10+ that of electrons, are located at or near the interface between the semiconductor substrate body 6 of the semiconductor integrated circuit board 5 and the oxide layers or films 8 and 9. 1 in hole trap
ili is captured and enters the lζ state. Therefore, when the semiconductor substrate body 6 is of type 1], the surface forming the interface between the oxide layer or the films 8 and 9 of the semiconductor substrate body 6 may become n-type, or the semiconductor substrate body 6 may become n-type. If it is type 11,
Its surface has become 11-inch.

Further, in this way, the oxide layer or film 8 of the semiconductor substrate body 6
The surface forming the interface between and 9 is now 11-inch!
(JREPO, semiconductor substrate body 6
Adjacent semiconductor elements of a large number of semiconductor elements constructed in the semiconductor substrate body 6 interfere with each other through surfaces forming interfaces between the oxide layers 1118 and 9 of the semiconductor substrate body 6.

Furthermore, when an 11-type transistor C is an adjacent semiconductor element among a large number of semiconductor elements configured on the semiconductor substrate body 6, the adjacent n-type 1-transistor becomes conductive.

Furthermore, when a large number of semiconductor elements (out of 41 semiconductor elements) constituted in the semiconductor substrate body 6 are the above-mentioned bipolar type 1-transistor, a large A leakage current occurs, and as a result, the DC current amplification factor of the bipolar transistor becomes low.

As mentioned above, when the semiconductor substrate body 5 is irradiated with radiation, if the semiconductor element formed on the semiconductor substrate body is the above-mentioned MO8 type transistor, its gate insulating film will be damaged. and half>9 (41, 4) The interface between the 2nd tunnel region and the 2nd tunnel region in the 4-plate body 6 also exists in the vicinity thereof, as described above in 161, due to the state in which holes are captured, the semiconductor substrate body 1] By making the surface forming the interface between the channel region and the gate insulating film n-type or more n-type, MO8
Type 1 - A negative change in the threshold voltage of the transistor returns.

Therefore, in the case of the conventional semiconductor device described in FIGS. 1 and 2, when it is exposed to radiation, the characteristics of the semiconductor integrated circuit board deteriorate. Teik.

According to the object of the present invention, the present invention proposes a novel semiconductor device that does not have the above-mentioned drawbacks.

DISCLOSURE OF THE INVENTION According to the present defense, the semiconductor device has the same configuration as the conventional semiconductor device iPi described above in appearance 1, FIG. 1, and FIG. Heat generation for heating the semiconductor integrated circuit board in order to avoid dissipating holes captured at the interface between the semiconductor substrate body and the oxide layer or film of the integrated circuit board or in the vicinity of the oxide layer or film outside the oxide layer or film. A resistor is provided for this purpose.

Therefore, when the semiconductor device according to the present invention is used while being irradiated with radiation, by using a heating resistor, it can be used while being irradiated with hit 04 FA.
However, the characteristics of the semiconductor integrated circuit board deteriorate! No stiffness.

PREFERRED EMBODIMENT OF THE INVENTION Hereinafter, a preferred embodiment of the semiconductor device according to the present invention will be described.

Embodiment 1 A first embodiment of the semiconductor device according to the present invention has a container body in which external connection terminal pieces 4 are planted, as shown in FIG. 3 and in the same manner as described above in FIG. A semiconductor substrate main body (t
! Semiconductor integrated circuit J, 4 which constitutes a semiconductor integrated circuit (6L/''C) and an oxide layer or layer (not shown) formed within or on the semiconductor substrate body. If the conductor integrated circuit boards 5 are arranged in one series in FIG. (・
A common semiconductor device (a bipolar transistor with a rector region, a base region, an emitter region, an electrode for the base, -1 Mitsutagawa Denchi, etc.; a source region, a drain region, a channel between the tT tunnel region, chi 1
A semiconductor substrate body 6 comprising a large number of MOS transistors (MOS transistors, etc.) facing each other in the channel region through a gate insulating film made of, for example, silicon dioxide. , an element isolation oxide layer or film 8 made of silicon dioxide, for example, formed on the upper surface side of the semiconductor substrate body (1) so as to isolate a large number of semiconductor elements 7 from each other, and a semiconductor substrate body (1). Figure 6 shows a structure in which an insulating or protective oxide layer or film 9 made of silicon dioxide, for example, is formed in +i+ to cover a large number of semiconductor elements 7 and oxide layers or films 8. However, in the first embodiment of the RF conductor (A device d) according to the present invention, in a semiconductor device having the above-mentioned configuration 1=J, as shown in FIG. In the main body 2, the semiconductor 15 base body 6 of the semiconductor integrated circuit board 5, the oxide layers or films 8 and 9 (the semiconductor cables 7 are MO
If there is a type 3 transistor, a semiconductor integrated circuit board is used to diffuse holes captured at or near the interface between the oxide layer (including the insulating film) to the outside of the oxide layer (8 and 9). For example, a plurality of heating resistors 10 for heating the heating element 5 are installed, for example, in a buried state.

The above is the 41st embodiment of the semiconductor device according to the present invention.
There are six Cs.

According to the semiconductor device according to the present invention having this configuration, the heating resistor 10 /!
: It is clear that if heat generation is avoided, the heat will be conducted to the C1 semiconductor integrated circuit board 5 through the container 1, and the semiconductor integrated circuit board 5 will be heated.

Accordingly, according to FIG. 3, the semiconductor device according to the present invention is /l
When used while being irradiated with IQJ rays, the heating resistor 10 generates heat and the radiation irradiates the semiconductor substrate body 6, oxide layer to crotch 8.
Holes are captured in the hole traps near the interface between and 9 and the tenon (b), and the holes are effectively lost 1151 out of the oxide layer or sides 8 and 9.

Therefore, in the case of the semiconductor device according to the present invention shown in FIG. It has the characteristic that it can be avoided.

Embodiment 2 In a second embodiment of the semiconductor device according to the present invention, as shown in FIG. 3 and in the same manner as described above in FIG. In a container 1 consisting of a container 2 and a lid 3, there is a semiconductor substrate body (not shown) and an oxide layer formed within or on the semiconductor substrate body. ~crotch (illustration I!ヂ)
The structure in which the semiconductor integrated circuit board 5 constituting the semiconductor integrated circuit is housed is shown on the right, and the semiconductor integrated circuit board 5 is indicated by the dotted line as described above in FIG. Semiconductor elements generally indicated by the enclosed symbol 7 (a bibolar type including a rectifier region, a base region, an emitter region, a base electrode, an emitter electrode, etc.)
・Lansistor: An MO8 type I transistor that has a source region, a drain region, a channel region between them, and a gate electrode that faces each other through a gate insulating film made of silicon dioxide, for example. The semiconductor substrate main body 6 constituting the majority of the semiconductor substrate main body G is made of silicon dioxide, for example, and is formed in such a way that a large number of semiconductor elements 7 are separated from each other on the upper surface side thereof. The element isolation oxide layer or film 8, ? I' (A) has an insulating glue or protective oxide layer or film 9 made of silicon dioxide, for example, formed on the A substrate body 6 to cover a large number of semiconductor elements 7 and the oxide layer or film 8. It has the following configuration.

However, in the second embodiment of the semiconductor device according to the present invention, in the semiconductor device having the above-mentioned configuration, the semiconductor integrated circuit board 5 is as shown in FIG. Inside the semiconductor substrate body 6
1 When the semiconductor substrate body 6 and the oxide layer to RtA 8 and 9 of the semiconductor integrated circuit board 5 are MO8 type transistors as in the first embodiment of the semiconductor device according to the present invention. , the semiconductor integrated circuit board 5 is heated so that the holes captured in or near the dark world (including the insulating film 1 to the insulating film) are released to the outside of the oxide layer 8 and 9. A plurality of heat-generating resistors 10 are installed, for example, in a buried state.

The above is the configuration of the second embodiment of the semiconductor device according to the present invention.

According to the body device according to the present invention having such a configuration, when the heating resistor 10 provided in the container 1 and located at -C is made to generate heat, the It is clear that it is heated.

Therefore, when the semiconductor device J according to the present invention shown in FIGS. By avoiding heat generation in the heating resistor 10 and receiving radiation, holes are created in hole traps at or near the interface between the semiconductor substrate body 6 and the oxide layers 8 and 9. Even if the hole is captured, the hole is absorbed into the oxide layer.
It is radiated to the outside of the thighs 8 and 9.

Therefore, in the case of the semiconductor device according to the present invention shown in FIGS. 1 and 4, the drawbacks of the conventional semiconductor device described above with reference to FIGS. 1 and 2 can be avoided. Let's talk about the characteristic of being a monkey.

Embodiment 3 The third embodiment of the semiconductor device according to the present invention is similar to the case of the second embodiment of the semiconductor device according to the present invention. A semiconductor substrate body (shown in the figure) is placed in a container 1 with a body 3 (14).
A semiconductor integrated circuit that constitutes a semiconductor integrated circuit by forming a semiconductor integrated circuit (1) and an oxide layer or film (not shown) formed within the semiconductor substrate body or within the semiconductor substrate body.
: It has a structure in which the I plate 5 is accommodated, and
(The #4 integrated circuit board 5 is surrounded by dotted lines.
Semiconductor elements (collector region, base region, emitter region, base electrode, emitter electrode, etc.) generally shown in bipolar type 1 to transistor: source region, drain region, channel between them. It constitutes a large number of MOS type i-runs (such as transistors) that face the channel region and the channel region through a gate insulating film made of, for example, silicon dioxide. Inside the semiconductor substrate body 6 and the other semiconductor substrate body 6,
On the upper surface side, there is an oxide layer for element isolation made of silicon dioxide, for example, formed so as to separate a large number of semiconductor elements 7 into n parts, and a large number of semiconductor elements 7 and An oxide layer or a protective oxide layer or film 9 made of silicon dioxide, for example, is formed to cover the oxide layer or film 8.

However, in the J3rd embodiment of the semiconductor device according to the present invention, in the cliff conductor mounting back having the above-mentioned configuration,
As shown in FIG. 5, the semiconductor integrated circuit Li board 5 is
The oxide layer or film 8 is placed on the semiconductor yA top circuit board 5.
In the semiconductor substrate body 6 of the semiconductor integrated circuit substrate 5 similar to the first and second embodiments of the semiconductor device according to the present invention, the oxide layer or the films 8 and 9 (the semiconductor element 7 is
In the case of an O8-type transistor, holes captured at or near the interface between the oxide layer (including the insulating film) and the oxide layer should be avoided. For example, a plurality of heating resistors 10 for heating the semiconductor integrated circuit board 5, for example, J! Ij nQ is provided.

The above is the 41st embodiment of the third embodiment of the semiconductor device according to the present invention.
It is four generations.

As described above, J
, then, as in the case of the second embodiment of the semiconductor device according to the present invention described in FIGS.
It is clear that the semiconductor integrated circuit board 5 will be heated if the heated resistor 10 is exposed to light, so if it is used while being irradiated with radiation, the heat generating resistor 10 By being exposed to the irradiation of the light beam, the semiconductor body 6 is exposed to the oxide layer or between the films 8 and 9. A hole is captured in the hole trap near the interface or tenon, and the hole is
The oxide layer or films 8 and 9 can be oxidized to the outside, and therefore, the conventional semiconductor device 16 described above with reference to FIGS. 1 and 2 does not have the disadvantages. Right. 1. In addition, in the above (1〆M/JX of the present invention
Although the embodiments have been shown, various modifications and changes can be made without departing from the spirit of the invention.

[Brief explanation of the drawing]

Figure 1 is a schematic front view of a conventional semiconductor device, with a portion of the semiconductor device having an lli surface. FIG. 12 is a cross-sectional view C showing the main parts of a semiconductor integrated circuit board used in a conventional semiconductor device δ. FIG. FIG. 4 is a front view taken along the line 1JW8 in cross section. FIG.
FIG. 3 is a cross-sectional view of the main parts of the semiconductor integrated circuit board used in the present invention. FIG. 5 shows a third embodiment of the semiconductor device according to the present invention.
3 is a schematic cross-sectional view of the main parts of the semiconductor integrated circuit board used in the third embodiment. 1・・・・・・・・・・・・Container 2・・・・・・
・・・・・・・・・Container body 3・・・・・・・・・・・・
...Heating body 4 ...... Terminal piece for external connection 0 ...... Semiconductor integrated circuit board 6 ... ...... Semiconductor substrate body 7 ...... Semiconductor element 8
．． 5)...... Oxide layer or film 10.
・・・・・・・・・・・・Heating resistor Applicant Nippon Telegraph and Telephone Public Corporation Figure 1

Claims (1)

[Claims] A semiconductor integrated circuit is constituted by having a semiconductor substrate body that constitutes a large number of semiconductor elements, and an oxide layer or film formed within or on the semiconductor substrate body. In a semiconductor device having a structure in which a semiconductor integrated circuit board having a structure of A heating resistor is installed to heat the semiconductor integrated circuit board in order to diffuse holes captured at or near the interface between the semiconductor integrated circuit board and the oxide layer or film. Tozuru semiconductor device.