JPS60158687A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS60158687A JPS60158687A JP1361884A JP1361884A JPS60158687A JP S60158687 A JPS60158687 A JP S60158687A JP 1361884 A JP1361884 A JP 1361884A JP 1361884 A JP1361884 A JP 1361884A JP S60158687 A JPS60158687 A JP S60158687A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- ingaasp
- semiconductor laser
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光通信の分野において使用される半導体レー
ザに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser used in the field of optical communications.
従来例の構成とその問題点
半導体レーザは、光通信用光源としてすでに一部実用期
に入っている。特に波長１．３μｍ付近においては、シ
リカ系ファイバの損失が極めて小さく長距離通信が可能
になると共に、材料分散がほとんど零になることから伝
送帯域を極めて広くとることが可能となる。従来からの
半導体レーザ開発は、主に横モードの安定化に主眼がお
かれてきだ。これは、光ファイバとの効率よい結合を考
える時、半導体レーザに要求される最も大きな特性の一
つである。一方、縦モードの制御についてはこれ−１，
てＤＦＢ構造（Ｊ、Ｊ、Ａｐｐｌ、Ｐｈｙｓ、２０．Ｐ
、Ｌ４８８１９８１年）あるいは、ＤＢＲ構造（昭和５
４年電子通信学会全国大会予稿集、１１−１．８３８）
が研究されている。これは、半導体レーザとグレーティ
ングとを組合せ波長選択性をもたせたものであるが、グ
レーティング周期が数１０００人オーダーと微細であり
、製造が極めて困難であるという欠点を有し未だ実用に
至っていないのが現状である。しかるに特にアナログ通
信の分野からの要求では低ノイズ化のだめには縦モード
の安定化は必須条件である。Conventional configurations and their problems Semiconductor lasers are already partially in practical use as light sources for optical communications. In particular, at wavelengths around 1.3 μm, the loss of silica-based fibers is extremely small, making long-distance communication possible, and material dispersion is almost zero, making it possible to have an extremely wide transmission band. Conventional semiconductor laser development has focused primarily on stabilizing the transverse mode. This is one of the most important characteristics required of a semiconductor laser when considering efficient coupling with an optical fiber. On the other hand, regarding vertical mode control, this-1,
DFB structure (J, J, Appl, Phys, 20.P
, L4881981) or DBR structure (Showa 5
Proceedings of the 4th year National Conference of the Institute of Electronics and Communication Engineers, 11-1.838)
is being studied. This is a device that combines a semiconductor laser and a grating to provide wavelength selectivity, but the grating period is minute, on the order of several thousand people, and it is extremely difficult to manufacture, so it has not yet been put into practical use. is the current situation. However, especially in the field of analog communication, stabilization of the longitudinal mode is an essential condition for reducing noise.
発明の目的
本発明の目的は、従来のような微細なグレーティング構
造を必要とせずに縦モードの安定化を計った新規なる半
導体レーザを提供とすることを目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide a novel semiconductor laser in which longitudinal modes are stabilized without requiring a fine grating structure as in the prior art.
発明の構成
本発明は、（００１） Ｉ ｎＰ基板上の（０１１）方
向にＶ字状の溝をストライプ状に形成し、この上にｎ−
ＩｎＧａＡｓＰ（Ｅｇ−０，９５ｅＶ） 、ｐ−ＩｎＰ
、ｎ−ＩｎＰ及びｎ−ＩｎＧａＡｇＰ （Ｅｇ−０，９
５ｅＶ）層を順次形成し、しかるのち、（０１１）方向
にさらに溝をストライプ状に形成し、このような直交す
る溝をもつウェーハ上にさらにｎ−ＩｎＰクラッド層、
ｎ−Ｉ ｎ Ｇ ａ Ａ ｇ Ｐ活性層、ｐ−ＩｎＰク
ラッド層、ｐ−ＩｎＧａＡｓＰキャップ層を形成したも
のである。Structure of the Invention The present invention forms V-shaped grooves in stripes in the (011) direction on a (001) I nP substrate, and then forms n-
InGaAsP (Eg-0,95eV), p-InP
, n-InP and n-InGaAgP (Eg-0,9
5 eV) layers are sequentially formed, and then grooves are further formed in a stripe shape in the (011) direction, and on the wafer having such orthogonal grooves, an n-InP cladding layer,
An n-InGaAgP active layer, a p-InP cladding layer, and a p-InGaAsP cap layer are formed.
尚、ｐ−ＩｎＧａＡｓＰキャップ層は本質的なものでは
なく、なくてもよい。このような手段によって作られた
発振波長１．３μｍの半導体レーザは、ｎ−ＩｎＧａＡ
ｓＰ活性層の一部が、ＩｎＰ層によっておきかえられる
構造となり、発振光のＩｎＰ層による反射、干渉効果に
より容易に縦モードの安定化を得ることが可能となる。Note that the p-InGaAsP cap layer is not essential and may be omitted. A semiconductor laser with an oscillation wavelength of 1.3 μm produced by such a method is made of n-InGaA
The structure is such that a part of the sP active layer is replaced by an InP layer, and it becomes possible to easily stabilize the longitudinal mode due to the reflection of oscillated light by the InP layer and the interference effect.
実施例の説明
（００１） ｎ−Ｉ ｎＰ基板１上に第１図に示すよう
に、（０１１）方向にＶ溝を形成した。■溝の幅は約４
μｍ深さは約３．２μｍである。このような基板上に液
相エビタギシャル法（以下ＬＰＥ法と略す）によりｎ−
ＩｎＧａＡｓＰ（Ｅｇ 〜０．９ｓｅＶ）２．ｐ−Ｉｎ
Ｐ層３ 、 ｎ−４ｎＰ層４ 、 ｎ−ＩｎＧａＡｓＰ
（Ｅｇ〜０．９５ｅＶ）層６を順次成長させる。この成
長によりＶ溝中及び平坦部には、第２図のような成長が
行なわれる。このようなエピタキシャルウェーハに８１
０２膜をとりつけ、しかるのち、ボトエノチングの手段
により、（ｏｌｌ）方向に幅約１．５μｍの窓を２６０
μｍ間隔であける。このストライプ状に結晶面が露出さ
れたウェーハを、まずＨ２ＳＯ４：Ｈ２Ｏ２：Ｈ２Ｏ（
３：１：１）の溶液によりエツチングすると、ｎ−Ｉｎ
ＧａＡｓＰ Ｎ６”’ｐ択的にとりのぞがれ、ｎ−Ｉｎ
Ｐ層４が露出する。しかしながら第２図に示したように
、■溝上においては、ｎ−ＩｎＧａＡｓＰ層６の厚みが
平坦部に比して約２倍程厚く成長しているためこの部分
のみはｎ−ＩｎＰ層４が露出せず残っている。次に、Ｈ
Ｏ２によってエツチングを行うと、ＩｎＰ層４のみが選
択的にエッチされｎ−ＩｎＧａＡｓＰ層２で停止する。Description of Examples As shown in FIG. 1, a V-groove was formed on a (001) n-I nP substrate 1 in the (011) direction. ■The width of the groove is approximately 4
The μm depth is approximately 3.2 μm. On such a substrate, n-
InGaAsP (Eg ~0.9seV)2. p-In
P layer 3, n-4nP layer 4, n-InGaAsP
(Eg~0.95eV) Layer 6 is grown sequentially. As a result of this growth, growth occurs in the V-groove and on the flat portion as shown in FIG. 81 for such epitaxial wafers.
02 membrane is attached, and then a window with a width of about 1.5 μm is formed in the (oll) direction at 260 mm by means of bottom etching.
Open at intervals of μm. First, the wafer with exposed crystal planes in the form of stripes was prepared using H2SO4:H2O2:H2O (
When etched with a solution of 3:1:1), n-In
GaAsP N6'''p selectively removed, n-In
P layer 4 is exposed. However, as shown in FIG. 2, the n-InGaAsP layer 6 grows about twice as thick on the groove as compared to the flat part, so the n-InP layer 4 is exposed only in this part. It remains without. Next, H
When etching is performed using O2, only the InP layer 4 is selectively etched and the etching stops at the n-InGaAsP layer 2.
一方Ｖ溝上には、ｎ−ＩｎＧａＡｓＰ層６が残っている
のでその下のＩｎＰ層はエッチされずに残る。On the other hand, since the n-InGaAsP layer 6 remains on the V-groove, the InP layer below it remains without being etched.
第３図に（０１１，）方向に形成された溝断面図を示す
。ｎ−ＩｎＧａＡＢＰ層６は、Ｓ １０２膜６との間の
オーバエッチを防止する意味でも必要である。FIG. 3 shows a cross-sectional view of a groove formed in the (011,) direction. The n-InGaABP layer 6 is also necessary in order to prevent overetching with the S 102 film 6.
Ｓ １０２膜６を除去後、このような溝中へ第４図に示
すように第２のＬＰＥ成長でｎ−１ｎＰ第１クラッド層
７ 、ｎ−ＩｎＧａＡｓＰ（Ｅｇ−０，９５ｅＶ）８．
ｐ−Ｉ ｎ Ｐ第２クラッド層ｇ 、ｐ−ＩｎＧａＡｓ
Ｐ層１０を順次成長させる。尚ｐ−ＩｎＱａＡｓＰ層１
０はなくてもよい。After removing the S102 film 6, an n-1nP first cladding layer 7, an n-InGaAsP (Eg-0, 95eV) 8.
p-InP second cladding layer g, p-InGaAs
The P layer 10 is grown in sequence. Furthermore, p-InQaAsP layer 1
0 is not necessary.
さてこのような成長によってＶ溝部は第５図に示すよう
になる。ｎ−ＩｎＧａＡｓＰ層２．ｐ−ＩｎＰ層３．ｎ
−ＩｎＰ層４は、上記したようにｎ−ＩｎＧａＡｓＰ層
６によってエッチされずに残っているが、これにｎ−Ｉ
ｎＰ第１クラッド層７ 、 ｎ −ＩｎＧａＡｓＰ層活
性層ｓ、ｐ−１ｎＰ第２クラッド層９ 、ｐ−ＩｎＧａ
ＡｓＰキャップ層１０を成長させると、図のように、ｎ
−ＩｎＧａＡｓＰ活性層８は、ｎ−ＩｎＰ４によってと
ぎれることになる。なお、面１１及び１２はヘキ開によ
って作られる共振器である。By this growth, the V-groove portion becomes as shown in FIG. 5. n-InGaAsP layer 2. p-InP layer 3. n
-The InP layer 4 remains unetched by the n-InGaAsP layer 6 as described above, but the n-I
nP first cladding layer 7, n-InGaAsP layer active layer s, p-1nP second cladding layer 9, p-InGa
When the AsP cap layer 10 is grown, as shown in the figure, n
-InGaAsP active layer 8 is interrupted by n-InP4. Note that surfaces 11 and 12 are resonators made by cleavage.
このような構造の半導体レーザに、オーミック電極をと
りつけ順方向に通電すると、第４図かられかるように、
活性層８以外の部分は、ｎ−ＩｎＰ４゜ｐ’−ＩｎＰ３
と、ダイオードが逆方向に接続される形となり、電流は
流れない。したがって電流は、活性層に集中すると共に
活性層はその周囲を屈折率の小さなＩｎＰによってとり
囲まれるため光もとじ込められ低しきい値で発振する。When an ohmic electrode is attached to a semiconductor laser having such a structure and current is applied in the forward direction, as shown in Fig. 4,
The parts other than the active layer 8 are n-InP4゜p'-InP3
In this case, the diode is connected in the opposite direction, and no current flows. Therefore, the current is concentrated in the active layer, and since the active layer is surrounded by InP having a small refractive index, light is also trapped and oscillation occurs at a low threshold.
一方、第５図かられかるように、発振後の光はｎ−Ｉｎ
Ｐ層８によって一部は反射、一部は透過し、その位相差
による干渉がおこり、ゲイン分布は、通常のレーザに比
して極めて選択性の強いものとなる。On the other hand, as shown in Figure 5, the light after oscillation is n-In
Part of the light is reflected by the P layer 8, and part of it is transmitted, and interference occurs due to the phase difference, resulting in a gain distribution that is extremely selective compared to a normal laser.
第６図は、本発明による半導体レーザの２５℃における
光−電流特性と、縦モードを示したものである。しきい
値電流は約４０ ｍ Ａであり、２ｒｎ’Ｗ。FIG. 6 shows the photo-current characteristics and longitudinal mode at 25° C. of the semiconductor laser according to the present invention. The threshold current is approximately 40 mA and 2rn'W.
６ｍＷ、１０ｍＷ動作における各発振波長のずれはきわ
めて微少である表共に、通常のレーザに見られる側帯モ
ードは全く見られなかった。The deviation of each oscillation wavelength during operation at 6 mW and 10 mW was extremely small, and no sideband modes seen in normal lasers were observed at all.
発明の効果
本発明の半導体レーザはグレーティング加工等の微細加
工なしで、極めて縦モードの単一性がよいものが得られ
る。Effects of the Invention The semiconductor laser of the present invention has extremely good longitudinal mode unity without any fine processing such as grating processing.
第１図は、本発明の一実施例における半導体の基板の斜
視図、第２図は成長層を設けた半導体ウェーへの構成図
、第３図は第２図に示す半導体ウェーハをエツチングし
て得た溝の形状を示す図、第４図は溝中に第２の成長に
よって得られた（０１１）方向の断面図、第５図は（０
１１）方向の断面図、あｉヨ第６図は、本発明の一実施
例のレーザの特性図である。
１ ・・＝−（００１）ｎ−ＩｎＰ基板、２ 、５ 、
８−＝・−ｎ−ＩｎＧａＡｓＰ、３ 、９−−−−−−
ｐ−ＩｎＰ、 ４ 、７・＝・−ｎ−ＩｎＰ、１０−−
ｐ−ＩｎＧａＡｓＰキャップ層。
第１図
第２図
第３図
第４図
第５＠FIG. 1 is a perspective view of a semiconductor substrate according to an embodiment of the present invention, FIG. 2 is a structural diagram of a semiconductor wafer provided with a growth layer, and FIG. 3 is a diagram showing the semiconductor wafer shown in FIG. 2 etched. Figures showing the shape of the grooves obtained. Figure 4 is a cross-sectional view in the (011) direction obtained by the second growth in the groove, and Figure 5 is a cross-sectional view in the (011) direction.
FIG. 6 is a characteristic diagram of a laser according to an embodiment of the present invention. 1...=-(001)n-InP substrate, 2, 5,
8-=・-n-InGaAsP, 3, 9-------
p-InP, 4, 7・=・−n-InP, 10−−
p-InGaAsP cap layer. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 @
Claims (1)
て７字型状の溝をストライプ状に形成し、前記基板上に
、少なくとも電流ブロック層となりうる積層体を設け、
前記積層体の（０１１）方向に第２の溝を形成し、前記
溝中に、少なくともｎ−ＩｎＰクラッド層、ｎ−ＩｎＧ
ａＡｓＰ活性層、ｐ−Ｉ ｎ Ｐクラッド層を成長させ
、前記ｎ−ＩｎＧａＡｓＰ活性層の一部がＶ字状溝部に
おいてＩｎＰ層によってときれていることを特徴とする
半導体レーザ。A 7-shaped groove is formed in a stripe shape along the (011) direction on a (001) plane n-InP substrate, and a laminate that can serve as at least a current blocking layer is provided on the substrate,
A second groove is formed in the (011) direction of the laminate, and at least an n-InP cladding layer and an n-InG
1. A semiconductor laser characterized in that an aAsP active layer and a p-InP cladding layer are grown, and a portion of the n-InGaAsP active layer is cut off by an InP layer in a V-shaped groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1361884A JPS60158687A (en) | 1984-01-27 | 1984-01-27 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1361884A JPS60158687A (en) | 1984-01-27 | 1984-01-27 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60158687A true JPS60158687A (en) | 1985-08-20 |
Family
ID=11838216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1361884A Pending JPS60158687A (en) | 1984-01-27 | 1984-01-27 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60158687A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6183186A (en) * | 1984-07-18 | 1986-04-26 | Nippon Petrochem Co Ltd | Novel tetrapyrrole medical composition |
-
1984
- 1984-01-27 JP JP1361884A patent/JPS60158687A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6183186A (en) * | 1984-07-18 | 1986-04-26 | Nippon Petrochem Co Ltd | Novel tetrapyrrole medical composition |
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