JPS60158175U - semiconductor x-ray detector - Google Patents
semiconductor x-ray detectorInfo
- Publication number
- JPS60158175U JPS60158175U JP4557184U JP4557184U JPS60158175U JP S60158175 U JPS60158175 U JP S60158175U JP 4557184 U JP4557184 U JP 4557184U JP 4557184 U JP4557184 U JP 4557184U JP S60158175 U JPS60158175 U JP S60158175U
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- amorphous semiconductor
- ray detector
- uniform
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はこの考案の一実施例にかかる半導体Ｘ線検出器
の平面図、第２図は第１図のＡ−Ａ線断面図である。
１・・・基板、２，３・：・非晶質半導体層、４，５・
・・蛍光体板。FIG. 1 is a plan view of a semiconductor X-ray detector according to an embodiment of the invention, and FIG. 2 is a sectional view taken along the line A--A in FIG. 1...Substrate, 2,3...:-Amorphous semiconductor layer, 4,5...
...phosphor board.
Claims (3)
有する均一な厚さでしかも均一なＸ線級収率をもつ第１
の支持板と、この第１の支持板上の特定の位置に特定形
状の面積を有するよう形成された第１の非晶質半導体層
と、上記第１の支持板と同等の面積を有する均一な厚さ
でしかも均一なＸ線吸収率をもち上記第１の支持板に重
ねられる第２の支持板と、この第２の支持板上の特定の
位置に特定形状の面積を有するよう形成された第７の非
晶質半導体層と、上記第１、第２の非晶質半導体層近傍
に設けられた蛍光体とを備えてなる半導体Ｘ線検出器。(1) A first film having an area that substantially covers the X-ray photographic film, a uniform thickness, and a uniform X-ray grade yield.
a first amorphous semiconductor layer formed to have a specific shaped area at a specific position on the first supporting plate, and a uniform layer having the same area as the first supporting plate. a second support plate having a uniform thickness and a uniform X-ray absorption rate and superimposed on the first support plate; and a second support plate formed to have an area of a specific shape at a specific position on the second support plate. A semiconductor X-ray detector comprising: a seventh amorphous semiconductor layer; and a phosphor provided near the first and second amorphous semiconductor layers.
質半導体層を形成することにより上記第１、第２の支持
板を１枚の支持板で構成し、この１枚の支持板の表面側
と裏面側とにそれぞれ蛍光体板を配置したことを特徴と
する実用新案登録請求の範囲第１項記載の半導体Ｘ線検
出器。(2) The first and second support plates are formed by one support plate by forming first and second amorphous semiconductor layers on the front and back sides of one support plate, respectively, and this one A semiconductor X-ray detector according to claim 1, wherein phosphor plates are arranged on the front side and the back side of the support plate, respectively.
半導体層が対面するように配置し、これらの間に１枚の
蛍光体板を挾んで重ね合わせたことを特徴とする実用新
案登録請求の範囲第１項記載の半導体Ｘ線検出器。(3) The first and second support plates are arranged so that the first and second amorphous semiconductor layers face each other, and one phosphor plate is sandwiched between them and overlapped. A semiconductor X-ray detector according to claim 1, which is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4557184U JPS60158175U (en) | 1984-03-29 | 1984-03-29 | semiconductor x-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4557184U JPS60158175U (en) | 1984-03-29 | 1984-03-29 | semiconductor x-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60158175U true JPS60158175U (en) | 1985-10-21 |
Family
ID=30559187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4557184U Pending JPS60158175U (en) | 1984-03-29 | 1984-03-29 | semiconductor x-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60158175U (en) |
-
1984
- 1984-03-29 JP JP4557184U patent/JPS60158175U/en active Pending
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