JPS60153103A - Method of producing zinc oxide nonlinear resistor - Google Patents
Method of producing zinc oxide nonlinear resistorInfo
- Publication number
- JPS60153103A JPS60153103A JP59009123A JP912384A JPS60153103A JP S60153103 A JPS60153103 A JP S60153103A JP 59009123 A JP59009123 A JP 59009123A JP 912384 A JP912384 A JP 912384A JP S60153103 A JPS60153103 A JP S60153103A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- nonlinear resistor
- oxide nonlinear
- producing zinc
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 この発明は酸化亜鉛非直線抵抗体の製造方法に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a method for manufacturing a zinc oxide nonlinear resistor.
一般に酸化亜鉛非直線抵抗体(以下Z、O素子と称す)
としては主添加物としてのBHOIl及びその他数種の
金属酸化物金倉んだ配合の素子が使用される。仁の素子
は耐久性の向上忙図るためと、素子外周部の絶縁コーテ
ィングのだめに400℃〜900℃の熱処理工程を施す
が、この熱処理を行9と系子の電圧電流非直a特性が太
きく低下してしまう欠点がある。この特性低下を起す原
因はB、、O,結晶構造が熱処理によシ変化してしまう
からである。また、上記素子はある電流領域(普通10
0μA−LA)での非直線特性はその非直線指数(α)
が20以上であるが、それ以下あるいはそれ以上では極
端に特性が低下する欠点がある。さらに主添加物である
B、、o、はB、元素のクラーク数が2 X 10−’
と資源的に乏しい。Generally, zinc oxide nonlinear resistor (hereinafter referred to as Z, O element)
For example, a device with a complex formulation of BHOIl as the main additive and several other metal oxides is used. In order to improve the durability of Nippon's elements, a heat treatment process of 400°C to 900°C is applied to the insulating coating on the outer periphery of the element. There is a drawback that the sound quality decreases considerably. The reason for this property deterioration is that the B, O, crystal structure changes due to heat treatment. In addition, the above element has a certain current range (usually 10
The nonlinear characteristic at 0μA-LA) is its nonlinearity index (α)
is 20 or more, but if it is less than or more than 20, there is a drawback that the characteristics are extremely deteriorated. Furthermore, the main additive B,, o, is B, and the Clarke number of the element is 2 x 10-'
and lack of resources.
この発明は上記の欠点を除去し、熱処理によシ非直線特
性を低下させないようにするとともに課電時にも漏れ電
流の少なるようにした酸化亜鉛非直線抵抗体の製造方法
を提供することを目的とする。It is an object of the present invention to provide a method for manufacturing a zinc oxide nonlinear resistor that eliminates the above-mentioned drawbacks, prevents deterioration of nonlinear characteristics due to heat treatment, and reduces leakage current even when electricity is applied. purpose.
この発明は上記の目的t−達成するために、予めPbO
* sb、o、’fl” 800〜1100℃で熱処理
した粉体を、Z、0 、 Mho@ + 5bIlo、
l a、、O,、lはう硅酸亜鉛ガラスの粉体ととも
に混合させて加圧成形し、その成形体を熱処理して形成
した構成にある。In order to achieve the above-mentioned objective t--, this invention has been developed in advance by using PbO
* sb, o, 'fl'' Powder heat-treated at 800 to 1100°C, Z, 0, Mho@ + 5bIlo,
l a, , O, and l are mixed together with zinc silicate glass powder, pressure molded, and the molded product is heat-treated.
以下図面を参照してこの発明の一実施例を説明する。 An embodiment of the present invention will be described below with reference to the drawings.
まず、Pb O+ sb、 O,、t−モル比で2:1
の割合で所定量秤量し、遠心ボールミルで良く混合し死
後、アルミナルツボ中で1000℃の熱で4時間仮焼金
行なった。このようにして仮焼した仮焼粉を前mo1%
及びほう硅酸亜鉛ガラス:0.2wt% を所定量秤
量し、これらに―11記反応物を重量比で2%加え、こ
れらの粉体を良く混合し、円板状に加圧成形する。その
後、成形体を空気中で1100℃、6時間焼成した後、
成形体の両端面を研磨し、A1電他を塗布し、590℃
、1時間の熱処理全行う。First, Pb O + sb, O,, t - molar ratio of 2:1
A predetermined amount was weighed out at a ratio of 1,000,000 and mixed well in a centrifugal ball mill, and after death, calcining was performed at 1000° C. for 4 hours in an alumina crucible. The calcined powder calcined in this way is pre-mo1%
Weigh a predetermined amount of 0.2 wt% of zinc borosilicate glass, add 2% by weight of the reaction product No. 11 to these, mix these powders well, and press-form them into a disk shape. After that, the molded body was fired in air at 1100°C for 6 hours,
Both end surfaces of the molded body were polished, coated with A1 electrolyte, and heated to 590°C.
, a complete heat treatment of 1 hour is carried out.
第1図は上記実施例によって製造された2、0素子の電
圧電流特性と、はう硅酸亜鉛ガラスを電力l−17ない
2゜og子の電圧電流特性を示す特性図で、図中、曲線
Aが本実施例のもの、曲線Bが前記後者の素子のもので
ある。この41図から明らかなようVて、電流領域での
非直線特性は本実施例のものは極端に感化しない。しか
し、前記後者のものは従来技術として述べたと同じよう
に非直線特性が極端に恣くなる。FIG. 1 is a characteristic diagram showing the voltage-current characteristics of the 2.0 element manufactured according to the above embodiment and the voltage-current characteristics of a 2°og element made of zinc silicate glass at a power of 1-17. Curve A is for this example, and curve B is for the latter element. As is clear from FIG. 41, the non-linear characteristics in the current domain are not extremely sensitive to V. However, in the latter case, the nonlinear characteristics are extremely arbitrary, as described in the prior art.
第2図は#1う硅酸亜鉛ガラス量を変えて添加した場合
の。、1α21.値(電流が0.1.Aと1. Om
A間の非直線指数)ft示す曲線Aと、V1mA/□、
の変化を示す曲線Bの特性図である。Figure 2 shows #1 when varying amounts of zinc silicate glass were added. , 1α21. value (current is 0.1.A and 1.Om
Curve A showing the non-linear index) ft between A and V1mA/□,
FIG. 3 is a characteristic diagram of curve B showing changes in .
第3図はiso℃の恒温偕中でVlmAの85チの直流
電圧を印加した時の漏れ電If、増加重工/工。を示す
特性図で、図中直線Aは本実施例のもの、直線Bはほう
硅酸亜鉛ガラスを添加しない素子のものである。Figure 3 shows the leakage current If when a DC voltage of 85 cm of VlmA is applied in a constant temperature chamber at iso°C. In this characteristic diagram, the straight line A in the figure is for this example, and the straight line B is for the element without zinc borosilicate glass added.
上記第1図から第3図で明らかのように本実施により製
造された抵抗体はほう硅酸亜鉛ガラスを添加しない素子
に比較して非lk線特性及び寿命特性が優れている。ま
た、焼結体の熱処理温度は500℃〜850℃が良く、
それ以下では寿命特性が良くならず850℃以上では非
直線特性が低下する。さらに、熱処理時間は素子の大き
さによシ異なるが、1時間以上が好ましく、昇温、降温
速度は素子に急熱、急冷等によシ歪が入らない程展の2
00℃/時以下が好ましい。なお、焼成温度は1000
〜1800℃が良くそれ以下であると緻密な焼結体とは
ならず、1800℃以上ではpboの揮散を招き非直線
性が悪くなる。焼成時間は1−20時間が良く1時間以
内では均一な焼結体が得られない。そして20時間以上
では表面付近の1’%O、SbgOs揮発が無視できな
くなる。As is clear from FIGS. 1 to 3 above, the resistor manufactured according to the present embodiment has superior non-lk line characteristics and life characteristics compared to elements to which zinc borosilicate glass is not added. In addition, the heat treatment temperature of the sintered body is preferably 500°C to 850°C,
Below this temperature, the life characteristics will not improve, and above 850° C., the nonlinear characteristics will deteriorate. Furthermore, the heat treatment time varies depending on the size of the element, but is preferably 1 hour or more, and the rate of temperature increase and cooling is set at a rate of 2 to 300 degrees so that the element is not strained by rapid heating or cooling.
00°C/hour or less is preferable. In addition, the firing temperature is 1000
A temperature of ~1800°C is good, and if it is lower than that, a dense sintered body will not be obtained, and if it is higher than 1800°C, pbo will volatilize and the nonlinearity will deteriorate. The firing time is preferably 1 to 20 hours, but a uniform sintered body cannot be obtained within 1 hour. After 20 hours or more, 1'% O and SbgOs volatilization near the surface cannot be ignored.
上記の結果からz、 OX子裂遣方法における各県加成
分の範囲はPH,O、5blOs反応物は(12〜20
wtチ、JilllO,は111〜5mo1% +5b
9011は(ll〜5mo1%。From the above results, the range of each additive component in the OX child fragmentation method is PH, O, and the 5blOs reactant is (12 to 20
wt Chi, JillO, is 111~5mo1% +5b
9011 is (ll~5mol%.
’c、、olIはQ、 1〜5 m o 1 % 、は
う硅酸亜鉛ガラxは0.01〜5wtチが好ましく、こ
の範囲よシ少いと効果が現われず多いと非直線性が低下
する。'c,,olI is Q, 1 to 5 m o 1%, and zinc silicate glass is preferably 0.01 to 5 wt. If it is less than this range, no effect will be seen, and if it is more than this range, nonlinearity will decrease. do.
なお、上記実施例では遠心ボールミル、アルミナルツボ
等tt’用したが、これらは別の種類のものでもよい。In the above embodiments, a centrifugal ball mill, an alumina crucible, etc. tt' were used, but other types of these may be used.
以上述べたように、この発明によれば、熱処理によって
も結晶構造の変化を起さないので、非直線特性を低下さ
せず、かつ電流が10μAと少ない鎖酸から非直線特性
値が高く、課電時にも漏れ電流の少なく、ま之、課電時
r#JJVcよる漏れ電流の増加も少ないため耐久性が
著しく sw 〃u L、しかも鳥、0.糸累子の(B
+のクラーク数2 ;(10−6)に比較してPb O
(Pbのクラーク数1.5 X 10゛−” )を使用
するので、資源とし°C豊富である等の利点をもってい
る。As described above, according to the present invention, the crystal structure does not change even through heat treatment, so the nonlinear characteristics do not deteriorate, and the nonlinear characteristics are high due to the chain acid with a small current of 10 μA. There is little leakage current even when power is applied, and there is little increase in leakage current due to r#JJVc when power is applied, so durability is remarkable. Itoko's (B
+ Clark number 2; PbO compared to (10-6)
(Clark number of Pb: 1.5 x 10゛-'') is used, so it has the advantage of being abundant in °C as a resource.
第1図はこの発り」の一実施例によって製造された2、
0素子の1姓圧71L流特性と#1う硅酸亜鉛ガラスを
絵肌しないZ。O素子の電圧電流特性図、第2図ははう
硅酸亜鉛ガラスjiはIえて添加した場合の非直線指数
とv、 m A /’a ll+の変化を示す特性図、
舘8図は恒温槽中でV、、、、Aの85%の直流電圧を
印加した時の涛:1れ電可し増加率の関係を示す特性図
である。Figure 1 shows 2 manufactured according to an embodiment of this invention.
0 element 1 pressure 71L flow characteristics and #1 zinc silicate glass Z that does not paint. Figure 2 is a voltage-current characteristic diagram of an O element, and a characteristic diagram showing changes in the nonlinear index and v, mA/'a ll+ when zinc silicate glass is added.
Figure 8 is a characteristic diagram showing the relationship between the sag and the rate of increase in current capacity by 1 when a DC voltage of 85% of V, . . . , A is applied in a constant temperature oven.
Claims (1)
体を熱処理成形したことを特許とする酸化亜鉛非直線抵
抗体の製造方法。 (2) 前記PbO、Sb、OH反応物を0.2から2
gwt%、M、O,(i)0.1から5 mo1%、S
b、O,1(11から5mo1%、a、、allIg、
1から5mo1%、幌−1亨及びほう硅酸亜鉛ガラスを
0.01か ら5Wtチ4z、oに添加したことを特徴とする特許請
求の範囲第1項に記載の酸化亜鉛非直線抵抗体の製造方
法。 (3) 前記R0、84,0,の割合がモル比で2:1
がら2:1.5である反応物とした特許請求の範囲第1
項に記載の酸化亜鉛非直線抵抗体の製造方法。[Claims] A method for manufacturing a zinc oxide nonlinear resistor, which is patented by adding zinc oxide to glass, mixing it, one-press molding, and heat-treating the molded product. (2) The PbO, Sb, OH reactants are 0.2 to 2
gwt%, M, O, (i) 0.1 to 5 mo1%, S
b, O,1 (11 to 5mol%, a,, allIg,
The zinc oxide nonlinear resistor according to claim 1, characterized in that 1 to 5 mo1% of the hood and zinc borosilicate glass are added to 0.01 to 5 Wt. Production method. (3) The ratio of R0, 84,0, is 2:1 in molar ratio
Claim 1, in which the reactant is 2:1.5
The method for manufacturing the zinc oxide nonlinear resistor described in Section 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59009123A JPS60153103A (en) | 1984-01-20 | 1984-01-20 | Method of producing zinc oxide nonlinear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59009123A JPS60153103A (en) | 1984-01-20 | 1984-01-20 | Method of producing zinc oxide nonlinear resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60153103A true JPS60153103A (en) | 1985-08-12 |
Family
ID=11711858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59009123A Pending JPS60153103A (en) | 1984-01-20 | 1984-01-20 | Method of producing zinc oxide nonlinear resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60153103A (en) |
-
1984
- 1984-01-20 JP JP59009123A patent/JPS60153103A/en active Pending
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