JPS60149153A - Microwave circuit - Google Patents

Microwave circuit

Info

Publication number
JPS60149153A
JPS60149153A JP545884A JP545884A JPS60149153A JP S60149153 A JPS60149153 A JP S60149153A JP 545884 A JP545884 A JP 545884A JP 545884 A JP545884 A JP 545884A JP S60149153 A JPS60149153 A JP S60149153A
Authority
JP
Japan
Prior art keywords
packages
terminals
circuit
package
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP545884A
Other languages
Japanese (ja)
Inventor
Yoshio Kasuga
春日 義男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP545884A priority Critical patent/JPS60149153A/en
Publication of JPS60149153A publication Critical patent/JPS60149153A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To equivalently reduce the lead wire length of the titled circuit by a method wherein the conduction part of a semiconductor package is made of common ground conductor by direct connection of the package to a dielectric substrate. CONSTITUTION:The conventional ground conductor is omitted by connecting conductive packages 1-1-1-3 containing semiconductor chips and input-output matching circuits directly to the dielectric substrate (lD thick), resulting in the reduction in the lengths of terminals 2-1-2-4 of the packages 1-1-1-3; then, adjacent package terminals 2-1-2-4 are connected by means of micro strip lines 3-1 and 3-2 (line length lS). At this time, the total length of connection lines of semiconductor components is reduced to 2lD+lS, and structural discontinuous points are reduced two points between packages 1-1-1-3 and the lines 3-1 and 3-2. Further, making the packages 1-1-1-3 of Au-plated kovar and the substrate of alumina ceramic makes the coefficient of linear expansion of each part approximately equal and appropriate. This construction realizes the reduction in member of discontinuous points of the circuit structure and the reduction in line length, resulting in the improvement in performance of this circuit.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体チップを導電性パンケージに収容して
構成したマイクロ波半導体部品ケ使用し、これらの相互
接続により形成したマイクロ波回路の改良に関する。
Detailed Description of the Invention (Industrial Field of Application) The present invention is an improvement of a microwave circuit formed by interconnecting microwave semiconductor components using a microwave semiconductor component configured by housing a semiconductor chip in a conductive pancage. Regarding.

(従来技術) 近年、マイクロ波回路としてマイクロ波集積回路(MI
C)技術が進歩し、さらにマイクロ波帯からミリ波帯に
至る広い周波数範囲で使用できるQaAs形電界効果ト
ランジスタが実用に供されるようになって、マイクロ波
回路は著しく性能が向上すると共に、小形化されてきた
。しかし、1箇の半導体デバイスチップをパンケージに
収容し、外部への接続用端子を備えて構成した従来形の
トランジスタやダイオードなどでは、パッケージ自体の
有する静電容量や接続端子自体の有するインダクタンス
などが、これらの半導体部品を使用した回路の広帯域特
性を阻害していた。このため、複数の半導体チップと入
出力整合回路とを同一の導電性パンケージの内部に収容
した広帯域、高利得、低雑音指数のトランジスタが要求
され、このような形のトランジスタが盛んに開発されて
きた。
(Prior art) In recent years, microwave integrated circuits (MI
C) As technology advances and QaAs field effect transistors that can be used in a wide frequency range from the microwave band to the millimeter wave band are put into practical use, the performance of microwave circuits has significantly improved. It has become smaller. However, in conventional transistors and diodes, which consist of a single semiconductor device chip housed in a pancase and equipped with external connection terminals, the capacitance of the package itself, the inductance of the connection terminals themselves, etc. , which hindered the broadband characteristics of circuits using these semiconductor components. For this reason, there is a need for a wide-band, high-gain, low-noise-figure transistor in which multiple semiconductor chips and input/output matching circuits are housed inside the same conductive pancage, and such transistors are being actively developed. Ta.

例えは、2箇のQaAs形電界効果トランジスタチップ
を使用し、入出力整合回路と2箇のGaAs形電界効果
トランジスタ相互間の整合回路とを同一のパッケージに
収容した14GHz帯用のトランジスタでは、外形寸法
が9X20X4wn、周波数帯域が14〜15GHz、
雑音指数が3dB。
For example, in a 14 GHz band transistor that uses two QaAs field effect transistor chips and houses an input/output matching circuit and a matching circuit between two GaAs field effect transistors in the same package, Dimensions are 9X20X4wn, frequency band is 14~15GHz,
Noise figure is 3dB.

利得が16dBであった。しかし、斯かる形式の多くの
マイクロ波回路においては、導電性を有する半導体部品
用のパッケージを使用しているとはいえ、接地用ストリ
ップ線路の接地導体が上記導電性パッケージに付属した
共通の接地導体とは別個に形成されているため、静電容
量やインダクタンスなどの寄生素子の影響が無視できな
いという問題点があった。
The gain was 16 dB. However, in many microwave circuits of this type, although packages for conductive semiconductor components are used, the grounding conductor of the grounding strip line is connected to the common ground attached to the conductive package. Since it is formed separately from the conductor, there is a problem in that the influence of parasitic elements such as capacitance and inductance cannot be ignored.

例えば、第1図は従来技術によって構成した上記マイク
ロ波回路の代表的な一例を示す断面図である。第1図に
おいて、1−1〜1−3はそれぞれ半導体チップと入出
力整合回路とを導電性パンケージ内に収容して構成した
半導体部品2−1〜、2−4はそれぞれ半導体部品1−
1〜1−3の端子、6−1.6−2はそれぞれ半導体部
品1−1〜1−3の相互間を接続するためのマイクロス
トリップ線路、4−1.4−2はそれぞれ誘電体基板、
5は半導体部品1−1〜1−3とマイクロストリップ線
路5−1.3−2との共通の接地導体である。第1図で
は、半導体部品1−1〜1−3の間がマイクロス) I
Jツブ線路3−1.3−2により接続されているが、ア
インレータ、抵抗減衰器、方向性結合器、あるいはその
他の回路素子により接続することもできる。第1図から
直ちに理解できるように、半導体部品1−1〜1−3と
マイクロストリップ線路3−1.5−2との間のそれぞ
れの接続においては回路に次のような不連続点がある。
For example, FIG. 1 is a cross-sectional view showing a typical example of the above microwave circuit constructed according to the prior art. In FIG. 1, 1-1 to 1-3 are semiconductor components 2-1 to 2-4, each of which is constructed by housing a semiconductor chip and an input/output matching circuit in a conductive pancake, and 2-4 is a semiconductor component 1-3, respectively.
Terminals 1 to 1-3, 6-1 and 6-2 are microstrip lines for connecting semiconductor components 1-1 to 1-3, and 4-1 and 4-2 are dielectric substrates, respectively. ,
5 is a common ground conductor for semiconductor components 1-1 to 1-3 and microstrip lines 5-1 and 3-2. In Figure 1, semiconductor components 1-1 to 1-3 are micros)
Although they are connected by J-tube lines 3-1, 3-2, they can also be connected by an inlator, a resistive attenuator, a directional coupler, or other circuit elements. As can be readily understood from FIG. 1, there are discontinuities in the circuit at each connection between the semiconductor components 1-1 to 1-3 and the microstrip line 3-1, 5-2 as follows. .

すなわち、半導体部品1−1〜1−3と接地導体5との
間、接地導体5と誘電9体基板4−1.4−2との間、
ならびに誘電体基板4−1゜4−2とマイクロストリッ
プ線路ろ−1,3−2との間に不連続点が存在している
。また、接地導体5ならびに誘電体基板4−1.4−2
の厚さをそれぞれtG 、 tDと仮定し、ストリップ
線路の長さ’gltBと仮定した時には、半導体部品1
−1〜1−3の間を接続するための線路全体の長さtc
は 1(3=2 (tG+tD )+ts@・−txt線路
は最短であって、上記不連続点の数が少ないほどよい。
That is, between the semiconductor components 1-1 to 1-3 and the ground conductor 5, between the ground conductor 5 and the dielectric nine-piece substrate 4-1, 4-2,
In addition, there are discontinuous points between the dielectric substrates 4-1 and 4-2 and the microstrip lines 1 and 3-2. In addition, the ground conductor 5 and the dielectric substrate 4-1.4-2
Assuming that the thickness of the semiconductor component 1 is tG and tD, and the length of the strip line is 'gltB,
-The total length of the line for connecting between 1 and 1-3 tc
is 1(3=2 (tG+tD)+ts@·-txt The line is the shortest, and the fewer the number of discontinuous points, the better.

マイクロ波回路のような波長が短い場合には、上記不連
続点数の少々いことが特に重要である。さらに、端子2
−1〜2−4の一端は半導体部品1−1〜1−3のパッ
ケージにガラス封止され、他端はス) IJツブ線路3
−1.3−2に半田付け、またはワイヤボンディングさ
れるのが普通であシ、環境温度の変化によって生ずる膨
張や収縮などによるストレスは端子2−1〜2−4の両
端に加わる。したがって、このようなストレスに対して
充分余裕のある回路構成が要求される。
When the wavelength is short, such as in a microwave circuit, it is particularly important that the number of discontinuous points is small. Furthermore, terminal 2
One end of -1 to 2-4 is sealed in glass to the package of semiconductor components 1-1 to 1-3, and the other end is IJ tube line 3.
-1.3-2 are usually soldered or wire bonded, and stress due to expansion or contraction caused by changes in environmental temperature is applied to both ends of the terminals 2-1 to 2-4. Therefore, a circuit configuration with sufficient margin for such stress is required.

そのため、端子2−1〜2−4の長さを短くして膨張や
収縮などの絶対量ヲ小さくすると共に、端子2−1〜2
−4の膨張率に等しい膨張率の材料で接地導体5、なら
びに誘電体基板4−1.4−2會構成することが必要で
ある。
Therefore, the lengths of the terminals 2-1 to 2-4 are shortened to reduce the absolute amount of expansion and contraction, and the terminals 2-1 to 2-2 are
It is necessary to construct the ground conductor 5, as well as the dielectric substrate 4-1, 4-2, from a material with a coefficient of expansion equal to the coefficient of expansion -4.

(発明の目的) 本発明の目的は、半導体部品のパッケージと誘電体基板
との間に存在する接地導体を省略して両者間を直結し、
半導体部品のパッケージの導電性部分を共通の接地導体
として使用することにより上記欠点を除去し、等測的に
リード線路長を短縮することができるように構成したマ
イクロ波回路を提供することにある。
(Objective of the Invention) The object of the present invention is to omit the ground conductor existing between the package of the semiconductor component and the dielectric substrate, and directly connect the two.
The object of the present invention is to provide a microwave circuit constructed in such a way that the above-mentioned drawbacks can be eliminated by using the conductive portion of a semiconductor component package as a common grounding conductor, and the length of the lead line can be shortened isometrically. .

(発明の構成) 本発明によるマイクロ波回路は複数の半導体部品と、単
数または複数の誘電体基板と、単数または複数のマイク
ロストリップ線路とを具備して構成したものである。
(Structure of the Invention) A microwave circuit according to the present invention includes a plurality of semiconductor components, one or more dielectric substrates, and one or more microstrip lines.

複数の半導体部品は単数あるいけ複数の端子を備えた導
電性パッケージから成り、それぞれ単数あるいは複数の
マイクロ波デバイスチップを収容して能動機能を与える
だめのものである。
The plurality of semiconductor components consist of electrically conductive packages with one or more terminals, each for housing one or more microwave device chips and providing active functionality.

単数または複数の誘電体基板は、複数の半導体部品の導
電性パンケージの間で導電性が保持されるように位置ぎ
めするためのものである。
The dielectric substrate or substrates are positioned to maintain electrical conductivity between the conductive pancages of the plurality of semiconductor components.

単数または複数のマイクロス) IJツブ紛路は、単数
または複数の誘電体基板の上にあって、それぞれ単数あ
るいは複数の端子の間を接続するためのものである。
(Single or plural micros) The IJ tube wire is provided on one or more dielectric substrates and is for connecting between one or more terminals, respectively.

(実施例) 次に、本発明について図面′f:参照して詳細に説明す
る。
(Example) Next, the present invention will be described in detail with reference to drawing 'f'.

第2図は、本発明によるマイクロ波回路の一実施例を示
す断面図である。第2図において、1−1〜1−3.2
−1〜2−4 、3−1 、6−214−1.4−2は
それぞれ第1図に示すものと同様の要素を示す番号であ
る。第2図は、半導体・くツケージを接続用マイクロス
トリップ線路ろ−1゜6−2のための接地導体として使
用した点が第1図とに異なっている。半導体パンケージ
自体を接続用マイクロストリップ線路3−1,6=2の
接地導体として使用した結果、従来形の第1図に示す接
地導体5が不要になり、半導体部品1−1〜1−3とマ
イクロストリップ線路&−1,6−2との間の接続にお
ける上記不連続点が2箇所に低減され、半導体部品間の
接続線路の全体の長さtdは l d= 21. D+ t B ・−・(2)に短縮
される。さらに、端子2−1〜2−4の温度による膨張
や収縮などのストレスも軽減される。
FIG. 2 is a sectional view showing an embodiment of the microwave circuit according to the present invention. In Figure 2, 1-1 to 1-3.2
-1 to 2-4, 3-1, and 6-214-1.4-2 are numbers indicating the same elements as shown in FIG. 1, respectively. FIG. 2 differs from FIG. 1 in that a semiconductor shoe cage is used as a ground conductor for the connecting microstrip line 1.6-2. As a result of using the semiconductor pancase itself as a grounding conductor for the connecting microstrip lines 3-1 and 6=2, the grounding conductor 5 shown in FIG. The discontinuity points in the connection between the microstrip lines &-1 and 6-2 are reduced to two, and the total length td of the connection line between the semiconductor components is ld=21. This is shortened to D+ t B (2). Furthermore, stress such as expansion and contraction due to temperature of the terminals 2-1 to 2-4 is also reduced.

一般に、半導体部品1−1〜1−3のパッケージはコバ
ール材に対して金メッキを施して作られているので、耐
蝕性や半田付は性などに最も秀れている。しだがって、
さらに誘電体基板4−1゜4−2としてアルミナセラミ
ックを使用する場合には、各部分の純膨張率がほぼ等し
いので、接地導体として理想的である。コバール材やア
ルミナセラミックなどが使用されない場合にも、回路構
造の不連続点の減少や、線路長の短縮などはマイクロ波
回路の性能の改善に大きく貢献している。
Generally, the packages of the semiconductor components 1-1 to 1-3 are made of Kovar material plated with gold, so they have the best corrosion resistance and solderability. Therefore,
Furthermore, when alumina ceramic is used as the dielectric substrates 4-1 and 4-2, the net expansion coefficients of each part are approximately equal, making it ideal as a ground conductor. Even when materials such as Kovar material or alumina ceramic are not used, the reduction of discontinuities in the circuit structure and the shortening of line length greatly contribute to improving the performance of microwave circuits.

以上の説明においては、接続回路として単なるマイクロ
ストリップ線路ヲ使用したが、アイソレータ、方向性結
合器、電力分配器、その他のマイクロ波回路が使用でき
ることは勿論である。
In the above description, a simple microstrip line was used as the connection circuit, but it goes without saying that isolators, directional couplers, power dividers, and other microwave circuits can be used.

(発明の効果) 以上説明したように本発明では、半導体部品のパッケー
ジと誘電体基板との間に存在する接地導体を省略して両
者間を直結し、半導体部品のパッケージの導電性部分を
共通の接地導体として使用することにより、等測的にリ
ード線路長を短縮するととができるようにして、マイク
ロ波帯における寄生素子の影響を著しく軽減することが
できるという効果がある。
(Effects of the Invention) As explained above, in the present invention, the ground conductor existing between the semiconductor component package and the dielectric substrate is omitted and the two are directly connected, and the conductive portion of the semiconductor component package is commonly used. By using it as a ground conductor, it is possible to shorten the lead line length isometrically, which has the effect of significantly reducing the influence of parasitic elements in the microwave band.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来技術によるマイクロ波回路の一例を示す
断面図である。 第2図は、本発明によるマイクロ波回路の一実施例を示
す断面図である。 1−171−3・″・・半導体部品 2−1〜2−4・・、端 子 3−1.3−2−・−接続用マイクロストリップ線路 4−1.4−2・・φ誘電体基板 5・・・・・・・・・接地導体
FIG. 1 is a sectional view showing an example of a microwave circuit according to the prior art. FIG. 2 is a sectional view showing an embodiment of the microwave circuit according to the present invention. 1-171-3...Semiconductor components 2-1 to 2-4..., terminals 3-1.3-2--Microstrip line for connection 4-1.4-2...φ dielectric Board 5... Ground conductor

Claims (1)

【特許請求の範囲】[Claims] 単数あるいは複数の端子を備えた導電性パンケージから
成り、それぞれ単数あるいは複数のマイクロ波デバイス
チップを収容して能動機能を与えるための複数の半導体
部品と、前記複数の半導体部品の導電性パッケージの間
で導電性が保持されるように位置決めするための単数ま
たは複数の誘電体基板と、前記単数または複数の誘電体
基板の上にあって、それぞれ前記単数あるいは複数の端
子の間を接続するための単数または複数のマイクロスト
リップ線路とを具備して構成したことを特徴とするマイ
クロ波回路。
between a plurality of semiconductor components, each consisting of a conductive pancage with one or more terminals for accommodating one or more microwave device chips and providing active functionality; and a conductive package of the plurality of semiconductor components; one or more dielectric substrates for positioning so as to maintain conductivity; and one or more dielectric substrates for connecting between the one or more terminals, respectively, on the one or more dielectric substrates. A microwave circuit comprising one or more microstrip lines.
JP545884A 1984-01-13 1984-01-13 Microwave circuit Pending JPS60149153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP545884A JPS60149153A (en) 1984-01-13 1984-01-13 Microwave circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP545884A JPS60149153A (en) 1984-01-13 1984-01-13 Microwave circuit

Publications (1)

Publication Number Publication Date
JPS60149153A true JPS60149153A (en) 1985-08-06

Family

ID=11611776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP545884A Pending JPS60149153A (en) 1984-01-13 1984-01-13 Microwave circuit

Country Status (1)

Country Link
JP (1) JPS60149153A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149902A (en) * 1986-12-13 1988-06-22 Nec Corp Microwave circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123201A (en) * 1982-01-19 1983-07-22 Nec Corp Shield structure of microwave circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123201A (en) * 1982-01-19 1983-07-22 Nec Corp Shield structure of microwave circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149902A (en) * 1986-12-13 1988-06-22 Nec Corp Microwave circuit

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