JPS60142409A - Driving device of shape memory alloy - Google Patents

Driving device of shape memory alloy

Info

Publication number
JPS60142409A
JPS60142409A JP58250805A JP25080583A JPS60142409A JP S60142409 A JPS60142409 A JP S60142409A JP 58250805 A JP58250805 A JP 58250805A JP 25080583 A JP25080583 A JP 25080583A JP S60142409 A JPS60142409 A JP S60142409A
Authority
JP
Japan
Prior art keywords
shape memory
temperature
memory alloy
thyristor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58250805A
Other languages
Japanese (ja)
Inventor
Taketoshi Sato
武年 佐藤
Osamu Senba
修 仙波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58250805A priority Critical patent/JPS60142409A/en
Publication of JPS60142409A publication Critical patent/JPS60142409A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1919Control of temperature characterised by the use of electric means characterised by the type of controller
    • G05D23/1921Control of temperature characterised by the use of electric means characterised by the type of controller using a thermal motor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Voltage And Current In General (AREA)

Abstract

PURPOSE:To keep the operating temperature of shape memory alloy at a constant level and to mount the shape memory alloy easily by increasing current flowing into the shape memory alloy by a phase control device when the temperature of the shape memory alloy is low, and reducing said current, when said temperature reaches a certain temperature. CONSTITUTION:During the positive period of an AC power supply 1, a Tr12 is off and a capacitor 8 is charged. When the charging voltage reaches the trigger voltage of a unijunction Tr9, the Tr9 is turned on, a thyristor 3 is connected and current is made to flow into the shape memory alloy 2, so that Joule heat is generated. When the temperature of the alloy 2 exceeds a certain temperature, the resistance value of a temperature detecting element 11 is increased and the charging time constant of the capacitor 8 is expanded. Consequently, the connecting phase angle of the thyristor 3 is increased, the connecting period is shortened and the Joule heat is also reduced. Since the Tr12 is on during the negative period of the AC power supply 1, the capacitor 8 is discharged and the thyristor 3 is disconnected.

Description

【発明の詳細な説明】 産業−1−の利用分野 本イr、明は形状記憶合金の駆動装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION Field of Application of Industry-1- The present invention relates to a drive device for a shape memory alloy.

従来例の構成とその問題点 現在、形状記憶合金合金(以下S、M、Aと呼ぶ)の、
駆動装置として、交流電源とS、M、Aとサイ1ノスタ
を直列に接続し、サイリスタで交流電源の位相を一一〜
πの期間位相制御することにより1駆動する装置が検削
され−でいる。
Structures of conventional examples and their problems At present, shape memory alloys (hereinafter referred to as S, M, and A) are
As a drive device, connect the AC power supply, S, M, A, and sinostar in series, and use the thyristor to change the phase of the AC power supply from 1 to 1.
A device that is driven once by controlling the phase for a period of π is inspected and machined.

この様に構成されたS、Mjの駆動装置においてば、常
に同一位相でサイリスタが導通し、そのため常に同一シ
ュール熱が発生し、S、ljAOltM 度が徐々に上
っていき、付近のケース等を熱により破損したりS、M
、Aの変態温度を超えて加熱されるためS 、M jの
特性が劣化する等の問題が生しる。
In the S, Mj drive device configured in this way, the thyristors are always conductive in the same phase, so the same surreal heat is always generated, the S, ljAOltM degree gradually increases, and the nearby cases etc. Damaged by heat, S, M
, A are heated above the transformation temperature, causing problems such as deterioration of the characteristics of S and M j.

発明の目的 本発明は上記の点に鑑み、S、M、Al17)動作温度
を常+rc一定に保ち、付近のケース等への熱の影響を
極力小さくし、実装し易くすると共に、S。
OBJECTS OF THE INVENTION In view of the above points, the present invention aims to maintain the operating temperature of S, M, Al17) constant at +rc, minimize the influence of heat on nearby cases, etc., and facilitate mounting.

M、Aの劣化を防ぐことができる。ffi動装置を提伊
するものである1、 発明の構成 この目的を達成するため、本発明の形状記憶合金の駆動
装置は、交流電源とS、M、Aと→ノーイリスタを直列
1妾続し、前記S、M、Aの温度を検知する温度検知素
子は位相制御装置に接続し、その位相制御装置の出力は
サイリスタのゲートに接続してS、M、Aを駆動するよ
う梧成さハでいる。
Deterioration of M and A can be prevented. 1. Structure of the Invention In order to achieve this object, the shape memory alloy drive device of the present invention connects an AC power source, S, M, A, and a → no-irristor in series. , the temperature sensing element for detecting the temperature of S, M, and A is connected to a phase control device, and the output of the phase control device is connected to the gate of a thyristor to drive S, M, and A. I'm here.

との構成によって、S、Mlの温度が低い時には位相制
御装置により、S、M、人に流れる電流を多くし、S、
M、Aが自己発熱し変態温度以上のある温度になると、
位相制御装置によりS。
According to the configuration, when the temperature of S, Ml is low, the phase control device increases the current flowing through S, M, and S,
When M and A self-heat and reach a certain temperature above their transformation temperature,
S by the phase control device.

M、Aに流れる電流を少なく(−でS 、M 、Aの自
己発熱による温度を制御し、安定してS、M、Aを駆動
することができるものである。
By reducing the current flowing through M and A (-), it is possible to control the temperature due to self-heating of S, M and A, thereby stably driving S, M and A.

実施例の説明 以下本発明の一実施例について、図面を参照しながら説
明する。第1図は本発明の一実施例におけるS、M、ム
の駆動装置の回路図を示すものである。
DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a circuit diagram of an S, M, and M driving device in one embodiment of the present invention.

図において、1は交流電源で、この交流電源の一端はS
 、M 、A2の一端に接続され、S、M。
In the figure, 1 is an AC power supply, and one end of this AC power supply is S
, M is connected to one end of A2, and S, M is connected to one end of A2.

A2の他端はサイリスタ3のアノードと抵抗16の一端
に接続され、サイリスタ3のカソードld交流電源1の
他端に接続され、サイリスタ3のゲートは位相制御装置
4の出力であるユニ・/ヤンクション・トランジスタ9
(以下U 、 J 、 T ト呼〕)のB1と抵抗10
の一端に接続さね5、このU、J。
The other end of A2 is connected to the anode of the thyristor 3 and one end of the resistor 16, and the cathode of the thyristor 3 is connected to the other end of the LD AC power supply 1. action transistor 9
(hereinafter referred to as U, J, T) B1 and resistor 10
Connect tongue 5 to one end of this U, J.

T9のB2には抵抗6の一端が接続され、Uj、T9の
工ばツタEには抵抗7とコンデンサ8と正特性の温度検
知素子11(以下P 、T 、Cと呼ぶ)の一端トラン
ジスタ12のコレクタとが接続され。
One end of a resistor 6 is connected to B2 of T9, and one end of a resistor 7, a capacitor 8, and one end of a transistor 12 (hereinafter referred to as P, T, and C) are connected to B2 of T9. is connected to the collector.

トランジスタ12のベース(は抵抗13.14の一端ト
トランゾスタ15のコレクタが接続され、トランジスタ
15のベースには抵抗16.17の一端とダイオード1
8のカソードが接続され抵抗6゜7.13及びP、T、
C11の他端は直流電源5の高圧側に接続し、抵抗10
,14,17どコンデンサ8の他端とトランジスタ12
.15の二ξツタと、ダイオード18のアノードを直流
電流5の低圧側と交流電源1の他端に接続している。な
お、19は位相同期回路である。
The base of the transistor 12 is connected to one end of a resistor 13.14 and the collector of the transistor 15, and the base of the transistor 15 is connected to one end of a resistor 16.17 and a diode 1.
The cathode of 8 is connected to the resistor 6°7.13 and P, T,
The other end of C11 is connected to the high voltage side of the DC power supply 5, and the resistor 10
, 14, 17 and the other end of the capacitor 8 and the transistor 12
.. 15 and the anode of a diode 18 are connected to the low voltage side of the DC current 5 and the other end of the AC power supply 1. Note that 19 is a phase synchronization circuit.

以上のように構成された形状記憶合金の駆動装置の動作
について説明する。寸ず交流電源1の正の期間、)・ラ
ン/メタ12はOFFする。その時P、T、C11の抵
抗値が低いため、P 、T 、C11と抵抗7の並列合
成抵抗とコンデンサ8で決捷る時定数にてコンデンサ8
に充電され(第2図Bの実線波形)、U、J、T90ト
リガ電圧に達すると、U、J、T9が導通し、抵抗1o
の両端に電圧が発生りで抵抗10に接続さノtメこサイ
リスタ3のゲートに電圧が印加され、サイリスタ3が導
通し、S1M、A2に電流が流れてS、M、A2に/ニ
ール熱が発生する。とのジュール熱によ、テs 、 M
 、 A 2力動作温度以上に7にるとS0M。
The operation of the shape memory alloy drive device configured as described above will be explained. During the positive period of the AC power supply 1), the run/meta 12 is turned off. At that time, since the resistance values of P, T, and C11 are low, the capacitor 8
(solid line waveform in Figure 2B), and when the U, J, and T90 trigger voltages are reached, U, J, and T9 become conductive, and the resistor 1o
A voltage is generated across the thyristor 3, which is connected to the resistor 10. A voltage is applied to the gate of the thyristor 3, making the thyristor 3 conductive, current flows through S1M and A2, and heat is generated in S, M, and A2. occurs. Due to Joule heat, Tes, M
, A When the temperature reaches 7 above the operating temperature, S0M occurs.

A2の形状が変化する。その時、S、M、A2の温度を
検知しているPyT、C11の抵抗値は、3M、A2の
温度が高いため高くなる。するとP、Tjl:11と抵
抗7の並列合成抵抗は高くなり、コンデンサ8の充電電
圧の時定数は長くなる。
The shape of A2 changes. At that time, the resistance values of PyT and C11, which are detecting the temperatures of S, M, and A2, become high because the temperatures of 3M and A2 are high. Then, the parallel combined resistance of P, Tjl: 11 and the resistor 7 becomes high, and the time constant of the charging voltage of the capacitor 8 becomes long.

つ才り、ザイIJスタ3の導通位相角が大きくなり(第
2図Bの破線波形)、導通期間が矧ぐなってS、M、1
2に流れる電流は少なくなりJM。
As a result, the conduction phase angle of the IJ star 3 increases (dashed line waveform in Fig. 2B), and the conduction period becomes narrower, causing S, M, 1
The current flowing through 2 becomes less and JM.

A2のノユール熱も少なくなる。交流電源1の負の期間
はトランジスタ12がONするため、コンデンサ8は放
電し電圧は零に保′にれ、サイリスタ3は導通しない。
A2's Noyule heat also decreases. During the negative period of the AC power source 1, the transistor 12 is turned on, so the capacitor 8 is discharged and the voltage is kept at zero, and the thyristor 3 is not conductive.

以下、この動作をくり返し、S、M、A2は同一温度に
保たれる。動作するI/c必要な温度以上にならな層像
にP 、T 、C11を設定しておけば、S、M、A2
の過厩の温度−上昇を防ぐことが可能である。
Thereafter, this operation is repeated to keep S, M, and A2 at the same temperature. By setting P, T, and C11 in a layer image that does not exceed the temperature required for operating I/C, S, M, and A2
It is possible to prevent the temperature from rising too much.

なお、実施例の場合サイリスタ3により交流電る(第2
図人の波形参照)。
In the case of the embodiment, the thyristor 3 generates AC power (second
(See the figure's waveform).

発明の効果 以」−のように本発明は交流電源と形状記憶合金とサイ
リスタを直列接続し、形状記憶合金の温度を検知する温
度検知素子と位相制御装置を備え、前記温度検知素子は
位相制御装置に接続され、その位相制御装置の出力がザ
イIノスタのゲートに接続さi−5形状記憶合金の温度
が一定になるよう位相制御したことにより、形状配憶合
金付近のケース等をクツ(により破損したり動作温度を
超えて加pJ(されるために特性が劣化する等のことが
生ぜず、その効果は絶大なものがある。
As described in ``Effects of the Invention'', the present invention connects an AC power supply, a shape memory alloy, and a thyristor in series, and includes a temperature detection element and a phase control device for detecting the temperature of the shape memory alloy, and the temperature detection element has a phase control device. The output of the phase control device is connected to the gate of the XI Nostar. By controlling the phase so that the temperature of the i-5 shape memory alloy remains constant, the case etc. near the shape memory alloy can be removed ( This is extremely effective, as it does not cause damage or deterioration of characteristics due to application of pJ (pJ) exceeding the operating temperature.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す形状記憶合金の駆動装
置の回路図、第2図A、Bけ同装置の各部の波形図であ
る。 1 ・・交流電源、2・・形状記憶合金(S、M、A)
、3・・・・サイリスタ、4・・・−・位相制御装置、
5・・・・直流電源、11・・・・温度検知素子(P、
T C)。 代理人の氏名 弁理士 中 尾 敏 男 ほか1字部1
図 第2図
FIG. 1 is a circuit diagram of a shape memory alloy driving device showing an embodiment of the present invention, and FIG. 2 is a waveform diagram of each part of the same device shown in FIGS. 1. AC power supply, 2. Shape memory alloy (S, M, A)
, 3...thyristor, 4...--phase control device,
5...DC power supply, 11...Temperature detection element (P,
TC). Name of agent: Patent attorney Toshio Nakao and 1 other characters, Section 1
Figure 2

Claims (1)

【特許請求の範囲】[Claims] 交流電源と形状記憶合金とサイリスタを直列接続し、前
記形状記憶合金の温度を検知する温度検知素子は位相制
御装置に接続し、その位相制御装置の出力はサイ1ノス
タのゲートに接続した形状記憶合金の1駆動装置1゜
An alternating current power supply, a shape memory alloy, and a thyristor are connected in series, and a temperature sensing element that detects the temperature of the shape memory alloy is connected to a phase control device, and the output of the phase control device is a shape memory device connected to the gate of the thyristor. Alloy 1 drive device 1゜
JP58250805A 1983-12-28 1983-12-28 Driving device of shape memory alloy Pending JPS60142409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58250805A JPS60142409A (en) 1983-12-28 1983-12-28 Driving device of shape memory alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58250805A JPS60142409A (en) 1983-12-28 1983-12-28 Driving device of shape memory alloy

Publications (1)

Publication Number Publication Date
JPS60142409A true JPS60142409A (en) 1985-07-27

Family

ID=17213306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58250805A Pending JPS60142409A (en) 1983-12-28 1983-12-28 Driving device of shape memory alloy

Country Status (1)

Country Link
JP (1) JPS60142409A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8706305B2 (en) 2008-02-21 2014-04-22 Canadian Space Agency Feedback control for shape memory alloy actuators

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50289A (en) * 1973-05-09 1975-01-06
JPS5320093A (en) * 1976-08-07 1978-02-23 Hitachi Heating Appliance Co Ltd Temperature controller
JPS5360472A (en) * 1976-11-11 1978-05-31 Hitachi Heating Appliance Co Ltd Temperature controller
JPS57136139A (en) * 1981-02-17 1982-08-23 Mitsubishi Electric Corp Fatigue testing device
JPS57185841A (en) * 1981-05-13 1982-11-16 Olympus Optical Co Basket type grip forcept
JPS5861723A (en) * 1981-10-09 1983-04-12 オリンパス光学工業株式会社 Endoscope
JPS58142721A (en) * 1982-02-19 1983-08-24 能美防災株式会社 Electromechanical converting element using shape memory alloy

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50289A (en) * 1973-05-09 1975-01-06
JPS5320093A (en) * 1976-08-07 1978-02-23 Hitachi Heating Appliance Co Ltd Temperature controller
JPS5360472A (en) * 1976-11-11 1978-05-31 Hitachi Heating Appliance Co Ltd Temperature controller
JPS57136139A (en) * 1981-02-17 1982-08-23 Mitsubishi Electric Corp Fatigue testing device
JPS57185841A (en) * 1981-05-13 1982-11-16 Olympus Optical Co Basket type grip forcept
JPS5861723A (en) * 1981-10-09 1983-04-12 オリンパス光学工業株式会社 Endoscope
JPS58142721A (en) * 1982-02-19 1983-08-24 能美防災株式会社 Electromechanical converting element using shape memory alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8706305B2 (en) 2008-02-21 2014-04-22 Canadian Space Agency Feedback control for shape memory alloy actuators

Similar Documents

Publication Publication Date Title
JP2589518B2 (en) DC regulator
JPS60142409A (en) Driving device of shape memory alloy
JPS6031192B2 (en) DC motor speed control device
JPS58139651A (en) Battery quick charging circuit
US3978369A (en) Solid state starter apparatus for a discharge lamp
JPS5915230Y2 (en) charging device
JPS58198889A (en) Induction heating inverter
JPH08182187A (en) Rush current suppression power source
JPS5985517A (en) Temperature controller
JPS58209881A (en) Heater drive controller
JPS6033739Y2 (en) chiyotsupa circuit
JPH0154955B2 (en)
JP2578157B2 (en) Electric razor
JPH05183350A (en) Protection circuit
JPH0321183Y2 (en)
JPH0336235Y2 (en)
JPS59181959A (en) Chopper circuit
JPS5848114A (en) Temperature controller
JPS60130099A (en) Circuit for firing lamp
JPS61285031A (en) Charge controlling circuit
JPH01136585A (en) Power unit for dc motor
JPH05227674A (en) Controller for vehicle generator
JPH0564039B2 (en)
JPS6223398A (en) Controller of vehicle generator
JPS61191293A (en) Rotating speed controller of motor