JPS60142409A - Driving device of shape memory alloy - Google Patents
Driving device of shape memory alloyInfo
- Publication number
- JPS60142409A JPS60142409A JP58250805A JP25080583A JPS60142409A JP S60142409 A JPS60142409 A JP S60142409A JP 58250805 A JP58250805 A JP 58250805A JP 25080583 A JP25080583 A JP 25080583A JP S60142409 A JPS60142409 A JP S60142409A
- Authority
- JP
- Japan
- Prior art keywords
- shape memory
- temperature
- memory alloy
- thyristor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
- G05D23/1921—Control of temperature characterised by the use of electric means characterised by the type of controller using a thermal motor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Control Of Voltage And Current In General (AREA)
Abstract
Description
【発明の詳細な説明】
産業−１−の利用分野
本イｒ、明は形状記憶合金の駆動装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Application of Industry-1- The present invention relates to a drive device for a shape memory alloy.
従来例の構成とその問題点
現在、形状記憶合金合金（以下Ｓ、Ｍ、Ａと呼ぶ）の、
駆動装置として、交流電源とＳ、Ｍ、Ａとサイ１ノスタ
を直列に接続し、サイリスタで交流電源の位相を一一〜
πの期間位相制御することにより１駆動する装置が検削
され−でいる。Structures of conventional examples and their problems At present, shape memory alloys (hereinafter referred to as S, M, and A) are
As a drive device, connect the AC power supply, S, M, A, and sinostar in series, and use the thyristor to change the phase of the AC power supply from 1 to 1.
A device that is driven once by controlling the phase for a period of π is inspected and machined.
この様に構成されたＳ、Ｍｊの駆動装置においてば、常
に同一位相でサイリスタが導通し、そのため常に同一シ
ュール熱が発生し、Ｓ、ｌｊＡＯｌｔＭ 度が徐々に上
っていき、付近のケース等を熱により破損したりＳ、Ｍ
、Ａの変態温度を超えて加熱されるためＳ 、Ｍ ｊの
特性が劣化する等の問題が生しる。In the S, Mj drive device configured in this way, the thyristors are always conductive in the same phase, so the same surreal heat is always generated, the S, ljAOltM degree gradually increases, and the nearby cases etc. Damaged by heat, S, M
, A are heated above the transformation temperature, causing problems such as deterioration of the characteristics of S and M j.
発明の目的
本発明は上記の点に鑑み、Ｓ、Ｍ、Ａｌ１７）動作温度
を常＋ｒｃ一定に保ち、付近のケース等への熱の影響を
極力小さくし、実装し易くすると共に、Ｓ。OBJECTS OF THE INVENTION In view of the above points, the present invention aims to maintain the operating temperature of S, M, Al17) constant at +rc, minimize the influence of heat on nearby cases, etc., and facilitate mounting.
Ｍ、Ａの劣化を防ぐことができる。ｆｆｉ動装置を提伊
するものである１、
発明の構成
この目的を達成するため、本発明の形状記憶合金の駆動
装置は、交流電源とＳ、Ｍ、Ａと→ノーイリスタを直列
１妾続し、前記Ｓ、Ｍ、Ａの温度を検知する温度検知素
子は位相制御装置に接続し、その位相制御装置の出力は
サイリスタのゲートに接続してＳ、Ｍ、Ａを駆動するよ
う梧成さハでいる。Deterioration of M and A can be prevented. 1. Structure of the Invention In order to achieve this object, the shape memory alloy drive device of the present invention connects an AC power source, S, M, A, and a → no-irristor in series. , the temperature sensing element for detecting the temperature of S, M, and A is connected to a phase control device, and the output of the phase control device is connected to the gate of a thyristor to drive S, M, and A. I'm here.
との構成によって、Ｓ、Ｍｌの温度が低い時には位相制
御装置により、Ｓ、Ｍ、人に流れる電流を多くし、Ｓ、
Ｍ、Ａが自己発熱し変態温度以上のある温度になると、
位相制御装置によりＳ。According to the configuration, when the temperature of S, Ml is low, the phase control device increases the current flowing through S, M, and S,
When M and A self-heat and reach a certain temperature above their transformation temperature,
S by the phase control device.
Ｍ、Ａに流れる電流を少なく（−でＳ 、Ｍ 、Ａの自
己発熱による温度を制御し、安定してＳ、Ｍ、Ａを駆動
することができるものである。By reducing the current flowing through M and A (-), it is possible to control the temperature due to self-heating of S, M and A, thereby stably driving S, M and A.
実施例の説明
以下本発明の一実施例について、図面を参照しながら説
明する。第１図は本発明の一実施例におけるＳ、Ｍ、ム
の駆動装置の回路図を示すものである。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a circuit diagram of an S, M, and M driving device in one embodiment of the present invention.
図において、１は交流電源で、この交流電源の一端はＳ
、Ｍ 、Ａ２の一端に接続され、Ｓ、Ｍ。In the figure, 1 is an AC power supply, and one end of this AC power supply is S
, M is connected to one end of A2, and S, M is connected to one end of A2.
Ａ２の他端はサイリスタ３のアノードと抵抗１６の一端
に接続され、サイリスタ３のカソードｌｄ交流電源１の
他端に接続され、サイリスタ３のゲートは位相制御装置
４の出力であるユニ・／ヤンクション・トランジスタ９
（以下Ｕ 、 Ｊ 、 Ｔ ト呼〕）のＢ１と抵抗１０
の一端に接続さね５、このＵ、Ｊ。The other end of A2 is connected to the anode of the thyristor 3 and one end of the resistor 16, and the cathode of the thyristor 3 is connected to the other end of the LD AC power supply 1. action transistor 9
(hereinafter referred to as U, J, T) B1 and resistor 10
Connect tongue 5 to one end of this U, J.
Ｔ９のＢ２には抵抗６の一端が接続され、Ｕｊ、Ｔ９の
工ばツタＥには抵抗７とコンデンサ８と正特性の温度検
知素子１１（以下Ｐ 、Ｔ 、Ｃと呼ぶ）の一端トラン
ジスタ１２のコレクタとが接続され。One end of a resistor 6 is connected to B2 of T9, and one end of a resistor 7, a capacitor 8, and one end of a transistor 12 (hereinafter referred to as P, T, and C) are connected to B2 of T9. is connected to the collector.
トランジスタ１２のベース（は抵抗１３．１４の一端ト
トランゾスタ１５のコレクタが接続され、トランジスタ
１５のベースには抵抗１６．１７の一端とダイオード１
８のカソードが接続され抵抗６゜７．１３及びＰ、Ｔ、
Ｃ１１の他端は直流電源５の高圧側に接続し、抵抗１０
，１４，１７どコンデンサ８の他端とトランジスタ１２
．１５の二ξツタと、ダイオード１８のアノードを直流
電流５の低圧側と交流電源１の他端に接続している。な
お、１９は位相同期回路である。The base of the transistor 12 is connected to one end of a resistor 13.14 and the collector of the transistor 15, and the base of the transistor 15 is connected to one end of a resistor 16.17 and a diode 1.
The cathode of 8 is connected to the resistor 6°7.13 and P, T,
The other end of C11 is connected to the high voltage side of the DC power supply 5, and the resistor 10
, 14, 17 and the other end of the capacitor 8 and the transistor 12
．． 15 and the anode of a diode 18 are connected to the low voltage side of the DC current 5 and the other end of the AC power supply 1. Note that 19 is a phase synchronization circuit.
以上のように構成された形状記憶合金の駆動装置の動作
について説明する。寸ず交流電源１の正の期間、）・ラ
ン／メタ１２はＯＦＦする。その時Ｐ、Ｔ、Ｃ１１の抵
抗値が低いため、Ｐ 、Ｔ 、Ｃ１１と抵抗７の並列合
成抵抗とコンデンサ８で決捷る時定数にてコンデンサ８
に充電され（第２図Ｂの実線波形）、Ｕ、Ｊ、Ｔ９０ト
リガ電圧に達すると、Ｕ、Ｊ、Ｔ９が導通し、抵抗１ｏ
の両端に電圧が発生りで抵抗１０に接続さノｔメこサイ
リスタ３のゲートに電圧が印加され、サイリスタ３が導
通し、Ｓ１Ｍ、Ａ２に電流が流れてＳ、Ｍ、Ａ２に／ニ
ール熱が発生する。とのジュール熱によ、テｓ 、 Ｍ
、 Ａ ２力動作温度以上に７にるとＳ０Ｍ。The operation of the shape memory alloy drive device configured as described above will be explained. During the positive period of the AC power supply 1), the run/meta 12 is turned off. At that time, since the resistance values of P, T, and C11 are low, the capacitor 8
(solid line waveform in Figure 2B), and when the U, J, and T90 trigger voltages are reached, U, J, and T9 become conductive, and the resistor 1o
A voltage is generated across the thyristor 3, which is connected to the resistor 10. A voltage is applied to the gate of the thyristor 3, making the thyristor 3 conductive, current flows through S1M and A2, and heat is generated in S, M, and A2. occurs. Due to Joule heat, Tes, M
, A When the temperature reaches 7 above the operating temperature, S0M occurs.
Ａ２の形状が変化する。その時、Ｓ、Ｍ、Ａ２の温度を
検知しているＰｙＴ、Ｃ１１の抵抗値は、３Ｍ、Ａ２の
温度が高いため高くなる。するとＰ、Ｔｊｌ：１１と抵
抗７の並列合成抵抗は高くなり、コンデンサ８の充電電
圧の時定数は長くなる。The shape of A2 changes. At that time, the resistance values of PyT and C11, which are detecting the temperatures of S, M, and A2, become high because the temperatures of 3M and A2 are high. Then, the parallel combined resistance of P, Tjl: 11 and the resistor 7 becomes high, and the time constant of the charging voltage of the capacitor 8 becomes long.
つ才り、ザイＩＪスタ３の導通位相角が大きくなり（第
２図Ｂの破線波形）、導通期間が矧ぐなってＳ、Ｍ、１
２に流れる電流は少なくなりＪＭ。As a result, the conduction phase angle of the IJ star 3 increases (dashed line waveform in Fig. 2B), and the conduction period becomes narrower, causing S, M, 1
The current flowing through 2 becomes less and JM.
Ａ２のノユール熱も少なくなる。交流電源１の負の期間
はトランジスタ１２がＯＮするため、コンデンサ８は放
電し電圧は零に保′にれ、サイリスタ３は導通しない。A2's Noyule heat also decreases. During the negative period of the AC power source 1, the transistor 12 is turned on, so the capacitor 8 is discharged and the voltage is kept at zero, and the thyristor 3 is not conductive.
以下、この動作をくり返し、Ｓ、Ｍ、Ａ２は同一温度に
保たれる。動作するＩ／ｃ必要な温度以上にならな層像
にＰ 、Ｔ 、Ｃ１１を設定しておけば、Ｓ、Ｍ、Ａ２
の過厩の温度−上昇を防ぐことが可能である。Thereafter, this operation is repeated to keep S, M, and A2 at the same temperature. By setting P, T, and C11 in a layer image that does not exceed the temperature required for operating I/C, S, M, and A2
It is possible to prevent the temperature from rising too much.
なお、実施例の場合サイリスタ３により交流電る（第２
図人の波形参照）。In the case of the embodiment, the thyristor 3 generates AC power (second
(See the figure's waveform).
発明の効果
以」−のように本発明は交流電源と形状記憶合金とサイ
リスタを直列接続し、形状記憶合金の温度を検知する温
度検知素子と位相制御装置を備え、前記温度検知素子は
位相制御装置に接続され、その位相制御装置の出力がザ
イＩノスタのゲートに接続さｉ−５形状記憶合金の温度
が一定になるよう位相制御したことにより、形状配憶合
金付近のケース等をクツ（により破損したり動作温度を
超えて加ｐＪ（されるために特性が劣化する等のことが
生ぜず、その効果は絶大なものがある。As described in ``Effects of the Invention'', the present invention connects an AC power supply, a shape memory alloy, and a thyristor in series, and includes a temperature detection element and a phase control device for detecting the temperature of the shape memory alloy, and the temperature detection element has a phase control device. The output of the phase control device is connected to the gate of the XI Nostar. By controlling the phase so that the temperature of the i-5 shape memory alloy remains constant, the case etc. near the shape memory alloy can be removed ( This is extremely effective, as it does not cause damage or deterioration of characteristics due to application of pJ (pJ) exceeding the operating temperature.
第１図は本発明の一実施例を示す形状記憶合金の駆動装
置の回路図、第２図Ａ、Ｂけ同装置の各部の波形図であ
る。
１ ・・交流電源、２・・形状記憶合金（Ｓ、Ｍ、Ａ）
、３・・・・サイリスタ、４・・・−・位相制御装置、
５・・・・直流電源、１１・・・・温度検知素子（Ｐ、
Ｔ Ｃ）。
代理人の氏名 弁理士 中 尾 敏 男 ほか１字部１
図
第２図FIG. 1 is a circuit diagram of a shape memory alloy driving device showing an embodiment of the present invention, and FIG. 2 is a waveform diagram of each part of the same device shown in FIGS. 1. AC power supply, 2. Shape memory alloy (S, M, A)
, 3...thyristor, 4...--phase control device,
5...DC power supply, 11...Temperature detection element (P,
TC). Name of agent: Patent attorney Toshio Nakao and 1 other characters, Section 1
Figure 2
Claims (1)
記形状記憶合金の温度を検知する温度検知素子は位相制
御装置に接続し、その位相制御装置の出力はサイ１ノス
タのゲートに接続した形状記憶合金の１駆動装置１゜An alternating current power supply, a shape memory alloy, and a thyristor are connected in series, and a temperature sensing element that detects the temperature of the shape memory alloy is connected to a phase control device, and the output of the phase control device is a shape memory device connected to the gate of the thyristor. Alloy 1 drive device 1゜
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250805A JPS60142409A (en) | 1983-12-28 | 1983-12-28 | Driving device of shape memory alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250805A JPS60142409A (en) | 1983-12-28 | 1983-12-28 | Driving device of shape memory alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60142409A true JPS60142409A (en) | 1985-07-27 |
Family
ID=17213306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58250805A Pending JPS60142409A (en) | 1983-12-28 | 1983-12-28 | Driving device of shape memory alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60142409A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8706305B2 (en) | 2008-02-21 | 2014-04-22 | Canadian Space Agency | Feedback control for shape memory alloy actuators |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50289A (en) * | 1973-05-09 | 1975-01-06 | ||
| JPS5320093A (en) * | 1976-08-07 | 1978-02-23 | Hitachi Heating Appliance Co Ltd | Temperature controller |
| JPS5360472A (en) * | 1976-11-11 | 1978-05-31 | Hitachi Heating Appliance Co Ltd | Temperature controller |
| JPS57136139A (en) * | 1981-02-17 | 1982-08-23 | Mitsubishi Electric Corp | Fatigue testing device |
| JPS57185841A (en) * | 1981-05-13 | 1982-11-16 | Olympus Optical Co | Basket type grip forcept |
| JPS5861723A (en) * | 1981-10-09 | 1983-04-12 | オリンパス光学工業株式会社 | Endoscope |
| JPS58142721A (en) * | 1982-02-19 | 1983-08-24 | 能美防災株式会社 | Electromechanical converting element using shape memory alloy |
-
1983
- 1983-12-28 JP JP58250805A patent/JPS60142409A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50289A (en) * | 1973-05-09 | 1975-01-06 | ||
| JPS5320093A (en) * | 1976-08-07 | 1978-02-23 | Hitachi Heating Appliance Co Ltd | Temperature controller |
| JPS5360472A (en) * | 1976-11-11 | 1978-05-31 | Hitachi Heating Appliance Co Ltd | Temperature controller |
| JPS57136139A (en) * | 1981-02-17 | 1982-08-23 | Mitsubishi Electric Corp | Fatigue testing device |
| JPS57185841A (en) * | 1981-05-13 | 1982-11-16 | Olympus Optical Co | Basket type grip forcept |
| JPS5861723A (en) * | 1981-10-09 | 1983-04-12 | オリンパス光学工業株式会社 | Endoscope |
| JPS58142721A (en) * | 1982-02-19 | 1983-08-24 | 能美防災株式会社 | Electromechanical converting element using shape memory alloy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8706305B2 (en) | 2008-02-21 | 2014-04-22 | Canadian Space Agency | Feedback control for shape memory alloy actuators |
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