JPS60139282U - 磁場強さ測定器 - Google Patents

磁場強さ測定器

Info

Publication number
JPS60139282U
JPS60139282U JP2801884U JP2801884U JPS60139282U JP S60139282 U JPS60139282 U JP S60139282U JP 2801884 U JP2801884 U JP 2801884U JP 2801884 U JP2801884 U JP 2801884U JP S60139282 U JPS60139282 U JP S60139282U
Authority
JP
Japan
Prior art keywords
magnetic field
measuring device
field strength
strength measuring
applies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2801884U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346384Y2 (enrdf_load_stackoverflow
Inventor
大江　平三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP2801884U priority Critical patent/JPS60139282U/ja
Publication of JPS60139282U publication Critical patent/JPS60139282U/ja
Application granted granted Critical
Publication of JPH0346384Y2 publication Critical patent/JPH0346384Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measuring Magnetic Variables (AREA)
  • Electron Tubes For Measurement (AREA)
JP2801884U 1984-02-28 1984-02-28 磁場強さ測定器 Granted JPS60139282U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2801884U JPS60139282U (ja) 1984-02-28 1984-02-28 磁場強さ測定器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2801884U JPS60139282U (ja) 1984-02-28 1984-02-28 磁場強さ測定器

Publications (2)

Publication Number Publication Date
JPS60139282U true JPS60139282U (ja) 1985-09-14
JPH0346384Y2 JPH0346384Y2 (enrdf_load_stackoverflow) 1991-09-30

Family

ID=30525503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2801884U Granted JPS60139282U (ja) 1984-02-28 1984-02-28 磁場強さ測定器

Country Status (1)

Country Link
JP (1) JPS60139282U (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (en) 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices

Also Published As

Publication number Publication date
JPH0346384Y2 (enrdf_load_stackoverflow) 1991-09-30

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