JPS60136156A - Laser-triggered xenon flash lamp - Google Patents
Laser-triggered xenon flash lampInfo
- Publication number
- JPS60136156A JPS60136156A JP24373083A JP24373083A JPS60136156A JP S60136156 A JPS60136156 A JP S60136156A JP 24373083 A JP24373083 A JP 24373083A JP 24373083 A JP24373083 A JP 24373083A JP S60136156 A JPS60136156 A JP S60136156A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- cathode
- laser
- poles
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/84—Lamps with discharge constricted by high pressure
- H01J61/90—Lamps suitable only for intermittent operation, e.g. flash lamp
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は光の吸収1反射、螢光等の定量若しくは定性分
析を目的とする分光分析に用いられる分ラッシュランプ
に関するものである、
〔発明の技術的背景〕
従来、キセノンフラッシュランプは高速度写真用光源や
写植用光源として多用されている。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a minute rush lamp used for spectroscopic analysis for the purpose of quantitative or qualitative analysis of light absorption, reflection, fluorescence, etc. Technical background] Conventionally, xenon flash lamps have been widely used as light sources for high-speed photography and phototypesetting.
これは、キセノンフラッシュランプが容易に高輝度のフ
ラッシュ光を発生することに基づくも2.のであり、最
近ではさらにその低発熱性や長寿命であること等が見面
され一部の分光分析の光源として使用され始めている。This is based on the fact that xenon flash lamps easily generate high-intensity flash light. Recently, due to its low heat generation and long life, it has begun to be used as a light source for some spectroscopic analyses.
分光分−析においては一般的に分光光度計を使用し、短
波長での光の吸収9反射、螢光を測定することが行なわ
れる。In spectroscopic analysis, a spectrophotometer is generally used to measure light absorption, reflection, and fluorescence at short wavelengths.
このような分光光度計のブ0源としては、通常安W度の
高いハロゲンランプ、重水素ランプ、キセノンアーク灯
が用いられている。ここに安定度とは光源像のwJ1#
lが小さいことを意味するものである。A halogen lamp, a deuterium lamp, or a xenon arc lamp, which have a high degree of W, are usually used as the energy source for such a spectrophotometer. Stability here means wJ1# of the light source image.
This means that l is small.
すなわち、分光光度計の光の入射ス1ノット上での揺動
が小さいことが正確な分光分析を行なう上で必須の条件
とされる。In other words, it is an essential condition for accurate spectroscopic analysis that the fluctuation of light on the incident slit of the spectrophotometer is small.
従来のキセノンフラッシュランプの具体的構造を第1図
に示す。The specific structure of a conventional xenon flash lamp is shown in FIG.
同図において、1は′クラス製着しくは石英製の管体で
あり、この管体1の内部には対向配置に陽極2笈び陰極
3が設げられている、陽極2と陰極 □3との間には複
数の始動棒4が配置され、また管体1内には数十〜数百
yes Hgのキセノンガスが封入されている。In the figure, reference numeral 1 denotes a tube body made of glass or quartz, and inside this tube body 1, an anode 2 and a cathode 3 are provided in opposing arrangement. A plurality of starting rods 4 are disposed between the tube body 1 and xenon gas of tens to hundreds of Hg is sealed inside the tube body 1.
上記構成のキセノンフラッシュランプにおいて、陽極2
.陰極3間に高電圧が印加され、また始動$ji、4に
順次高電圧が印加されると、始動棒4による軍、界に基
づき陽極2.陰極3間に゛「68位の傾きが生じ、その
間のインピーダンスが低下する結果陽極2と1!’i
Qi 3との間に放電が生じる。この放電は雷と同様で
あり、プラズマ状態となって陽極2から始動棒4を経て
陰極に至り瞬間的に600〜1、00 (l A /c
rlの電流密度に達する。In the xenon flash lamp configured as above, the anode 2
.. When a high voltage is applied between the cathode 3 and the starting rod 4, the anode 2. An inclination of 68 degrees occurs between cathode 3, and the impedance between them decreases, resulting in anodes 2 and 1!'i
A discharge occurs between Qi 3 and Qi 3. This discharge is similar to lightning, and it becomes a plasma state and reaches the cathode from the anode 2 through the starting rod 4, instantaneously at 600 to 1,00 (l A /c
A current density of rl is reached.
このような大電流が流れるとき管体l内のキセノンガス
を励起して高輝度のフラッシュ光Fを発生する。When such a large current flows, it excites the xenon gas within the tube 1 and generates a high-intensity flash light F.
しかしながら、このフラッシュ光Fは始動棒4″の電界
変n1に基づくプラズマ状態のわずかな変動で第2図に
示すような水平方向(放電の方向とは垂直方向)の揺動
が生じ、このようなフラッシュ光の揺動のため、キセノ
ンフラッシュランプは高輝度という大きな利点を有しな
がら分光光度計等の光源として十分寄与することができ
なかった。However, this flash light F oscillates in the horizontal direction (perpendicular to the direction of discharge) as shown in Fig. 2 due to slight fluctuations in the plasma state based on the electric field change n1 of the starting rod 4''. Due to the fluctuation of the flash light, the xenon flash lamp, although having the great advantage of high brightness, could not sufficiently contribute as a light source for spectrophotometers and the like.
本発明は上記事情に鑑みてなされたものであり、プラズ
マ状態のフラッシュ光の揺動を生じさせる始動棒が不要
でかつ高輝度で安定したフラッシュ光を得ることができ
分光分析の光源として好適なレーザトリガードキセノン
フラッシュランプの提供を目的とするものである。The present invention has been made in view of the above circumstances, and is suitable as a light source for spectroscopic analysis because it eliminates the need for a starting rod that causes fluctuations in the flash light in the plasma state, and provides stable flash light with high brightness. The purpose of this invention is to provide a laser-triggered doxenon flash lamp.
上記目的を達FM、するための本発明の概要は、管体内
にキセノンガスを封入するとともに陽極と陰極とを対向
配置してなるランプ本体と、レーザ光線を発生するレー
ザ発振手段とを備え、前記陽極。The outline of the present invention for achieving the above object is to include a lamp body in which xenon gas is sealed in a tube and an anode and a cathode are arranged facing each other, and a laser oscillation means for generating a laser beam, The anode.
陰極間にレーザ光線を通過させることにより生じる両極
間の電位の傾きに基づきその両極間にプラズマ状態のフ
ラッシュ光を発生させるようにしたことを性徴とするも
のである、
〔発明の実施例〕
以下に本発明の実施例を第、3図を参照して説明1゛る
。[Embodiments of the Invention] The following is a characteristic feature of the invention, which is characterized in that a flash light in a plasma state is generated between the cathodes based on the potential gradient between the two electrodes caused by passing a laser beam between the cathodes. An embodiment of the present invention will now be described with reference to FIGS.
同図において、1()はガラス製若しくは石英製のラン
プ本体であり、このランプ本体10の内部には第1図に
示すキセノンフラッシュランプと同様数十〜11 M
tax Hgのキセノンガスが封入されている、
また、ランプ本体1()の内部には対向配置に陽小<−
111とFur<12とが設けられている。In the same figure, reference numeral 1 ( ) is a lamp body made of glass or quartz, and inside this lamp body 10 there are several tens to 11 M
xenon gas of tax Hg is sealed inside the lamp body 1 ().
111 and Fur<12 are provided.
I易析11及び1衾極12の中心部にはともにレーザ光
線りが通スト9可能な小孔]1a、]2aが仰、設され
ている、
J3はレーザ光線りを発生するレーザ発振手段であ、す
、このレーザ発振手段13のレーザ光放出口13aは、
ランプ本体10の外部でかつ陽極】1に穿設した小孔1
1aK臨ませて配置されている、上記構成のレーザトリ
ガードキセノンフラッシュランプにおいて、陽極11.
隈JfIiL12間に所定の電圧を印加するとともにレ
ーザ光放出口13aいてランプ本体10の外部に至る。In the center of both the I analysis 11 and the first end pole 12, there are small holes ]1a, ]2a through which the laser beam can pass.J3 is a laser oscillation means for generating the laser beam. So, the laser beam emission port 13a of this laser oscillation means 13 is as follows.
A small hole 1 bored outside the lamp body 10 and in the anode 1
In the laser-triggered doxenon flash lamp having the above configuration, the anode 11.
A predetermined voltage is applied between the Kuma JfIiL 12 and the laser beam is emitted through the laser beam emitting port 13a to the outside of the lamp body 10.
小孔11aから小孔】2a、即ち陽極】1から陰極12
へレーザ光線りが通過する際に両極間の空間における電
位分布に傾きが生じ、これに伴ない両極間のインピーダ
ンスが低くなって両極間にプラズマ放電が開始されフラ
ッシュ光Fが発生する。From the small hole 11a to the small hole]2a, that is, from the anode]1 to the cathode 12
When the laser beam passes through the electrode, the electric potential distribution in the space between the two electrodes is tilted, and as a result, the impedance between the two electrodes becomes low, plasma discharge is started between the two electrodes, and flash light F is generated.
レーザ光線りは直線性が良好であるため、両極間のプラ
ズマ放tfi、も直線的になり、したがって従来のキセ
ノンフラッシュランプのような水平方向の揺動がない安
定したフラッシュ光F?得ることができる、
本発明は上述した実施例に1SL4足されるものではな
く、その要旨の範囲内で神々θ)変形が可能であること
ば菖うまでもない。Since the laser beam has good linearity, the plasma radiation between the two poles is also linear, so there is no horizontal fluctuation like in conventional xenon flash lamps, resulting in stable flash light F? It goes without saying that the present invention does not add 1SL4 to the embodiments described above, and can be modified within the scope of its gist.
例えばレーザ発J);?手段として気体、液体、固体半
7!う体へ!?の各1ifiのレーザ物/7j↓を用い
たものを用いろことができる。For example, laser emission J);? Gas, liquid, and solid semi-7 as means! To the body! ? It is possible to use a laser device of 1ifi/7j↓.
以」二詳述した本発明によれば、レーザ光線によりラン
プ本体内の陽極−1陰極間のインピーダンスを低下させ
その両極間にレーザ光線の軌跡に沿ったプラズマ族TJ
、 ?生じさせるようにしたものであるから、従来のキ
セノンフラッシュランプのような始動棒が土製となると
ともに、揺動が少なく安定用に′fA+1、かつ高輝度
のフラッシュ光′?得ることができ、分光分析の光源と
して好適なレーザトリカードキセノンフラッシュランプ
を提供し得るものである。According to the present invention described in detail below, the impedance between the anode and the cathode in the lamp body is reduced by a laser beam, and a plasma group TJ is generated between the two electrodes along the locus of the laser beam.
, ? Since the starting rod is made of earthenware like the conventional xenon flash lamp, it also has less vibration and provides stable ``fA+1'' and high-intensity flash light. A laser tricard xenon flash lamp suitable as a light source for spectroscopic analysis can be provided.
第1図は従来のキセノンフラッシュランプの放Ω
市、状態を示す説明図、第2図は同上陽極、陰極間の放
電時におけるフラッシュ光の揺動状態を示す説、四回、
第3図は本発明の実施例を示す説明図である。
1・・・管体、10・・・ランプ本体、11・・・陽極
、12・・・陰極、13・・・レーザ発振手段、F・・
・フラッシュ光。Figure 1 is an explanatory diagram showing the state of discharge of a conventional xenon flash lamp, and Figure 2 is an explanatory diagram showing the fluctuation state of flash light during discharge between the anode and cathode.
FIG. 3 is an explanatory diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... tube body, 10... lamp body, 11... anode, 12... cathode, 13... laser oscillation means, F...
・Flash light.
Claims (1)
を対向配置してなるランプ本体と、レーザ光線を宥、生
するレーザ発振手段とを価え、前記陽極、陰4;メ間に
レーザ光線を通過させることにより生じる両極間σ)電
位の傾きに基づきその両極間にプラズマ状態のフラッシ
ュ光を発生させるようにしたことを特徴とするレーヘト
リガードキセノンフラッシュランプ。The lamp body includes a lamp body in which xenon gas is inserted into the filling, and an anode and a cathode are arranged facing each other, and a laser oscillation means for generating and generating a laser beam, and the laser beam is emitted between the anode and the cathode. 1. A Rehhe triggered xenon flash lamp characterized in that a flash light in a plasma state is generated between the two poles based on the gradient of the electric potential between the two poles caused by passing the σ).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24373083A JPS60136156A (en) | 1983-12-26 | 1983-12-26 | Laser-triggered xenon flash lamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24373083A JPS60136156A (en) | 1983-12-26 | 1983-12-26 | Laser-triggered xenon flash lamp |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60136156A true JPS60136156A (en) | 1985-07-19 |
Family
ID=17108134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24373083A Pending JPS60136156A (en) | 1983-12-26 | 1983-12-26 | Laser-triggered xenon flash lamp |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60136156A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5095357A (en) * | 1989-08-18 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Inductive structures for semiconductor integrated circuits |
US5227659A (en) * | 1990-06-08 | 1993-07-13 | Trustees Of Boston University | Integrated circuit inductor |
US6842080B1 (en) | 1998-05-07 | 2005-01-11 | Niigata Seimitsu Co., Ltd. | LC oscillator formed on a substrate |
US7268611B2 (en) | 2002-08-09 | 2007-09-11 | Renesas Technology Corporation | Semiconductor device and memory card using same |
WO2010030586A1 (en) * | 2008-09-09 | 2010-03-18 | Kino Flo, Inc. | Method and apparatus for maintaining constant color temperature of a fluorescent lamp |
US8339230B2 (en) | 2006-08-01 | 2012-12-25 | Renesas Electronics Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
US9042117B2 (en) | 2010-03-24 | 2015-05-26 | Renesas Electronics Corporation | Semiconductor device |
-
1983
- 1983-12-26 JP JP24373083A patent/JPS60136156A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5095357A (en) * | 1989-08-18 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Inductive structures for semiconductor integrated circuits |
US5227659A (en) * | 1990-06-08 | 1993-07-13 | Trustees Of Boston University | Integrated circuit inductor |
US6842080B1 (en) | 1998-05-07 | 2005-01-11 | Niigata Seimitsu Co., Ltd. | LC oscillator formed on a substrate |
US7268611B2 (en) | 2002-08-09 | 2007-09-11 | Renesas Technology Corporation | Semiconductor device and memory card using same |
US8339230B2 (en) | 2006-08-01 | 2012-12-25 | Renesas Electronics Corporation | Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon |
WO2010030586A1 (en) * | 2008-09-09 | 2010-03-18 | Kino Flo, Inc. | Method and apparatus for maintaining constant color temperature of a fluorescent lamp |
US8456091B2 (en) | 2008-09-09 | 2013-06-04 | Kino Flo, Inc. | Method and apparatus for maintaining constant color temperature of a fluorescent lamp |
US9042117B2 (en) | 2010-03-24 | 2015-05-26 | Renesas Electronics Corporation | Semiconductor device |
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