JPS60132321A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS60132321A JPS60132321A JP24031183A JP24031183A JPS60132321A JP S60132321 A JPS60132321 A JP S60132321A JP 24031183 A JP24031183 A JP 24031183A JP 24031183 A JP24031183 A JP 24031183A JP S60132321 A JPS60132321 A JP S60132321A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- displacement
- sensor
- controller
- core tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は半導体装置の製造方法に関し、特に気相成長法
で絶縁膜又はエピタキシャル層を形成するにあたシ、膜
厚を所定の厚さに形成する半導体装置の製造方法に関す
る。[Detailed Description of the Invention] (Technical Field) The present invention relates to a method for manufacturing a semiconductor device, and in particular, when forming an insulating film or an epitaxial layer by a vapor phase growth method, the film is formed to a predetermined thickness. The present invention relates to a method for manufacturing a semiconductor device.
（従来技術）
従来の絶縁膜又はエピタキシャル層を形成する方法を第
１図に基き説明する。第１図に示すように、絶縁膜又は
エピタキシャル層を形成する成長装情の炉心管１の中に
半導体基板を並べたトレー２をセットする。次いで、ヒ
ーター４で成長温度まで加熱した状態で配管５からミッ
クスガスを流し、ディフュザー６から炉心管内にガスを
流す。(Prior Art) A conventional method for forming an insulating film or an epitaxial layer will be described with reference to FIG. As shown in FIG. 1, a tray 2 on which semiconductor substrates are arranged is set in a core tube 1 of a growth equipment for forming an insulating film or an epitaxial layer. Next, the mixed gas is heated to the growth temperature by the heater 4, and then is flowed from the pipe 5, and the gas is flowed from the diffuser 6 into the reactor core tube.
そして炉心管終端からダクト８により未反応ガスを排気
しながら半導体基板３上に絶縁膜あるいはエピタキシャ
ル層を成長させる。このときダンパー７は手動で調製で
きる形になっているが、通常は調整したあとは固定した
状態で成長を行なっていた。Then, an insulating film or an epitaxial layer is grown on the semiconductor substrate 3 while exhausting unreacted gas through the duct 8 from the end of the furnace tube. At this time, the damper 7 is designed to be able to be adjusted manually, but after adjustment, growth is normally performed in a fixed state.
従って、メインタクト９に接ワ１：されている他のダク
ト１０等の影響により、タクト８の排気量が変化してし
まう。そのため半導体基板３上に成長される膜厚を初め
膜買等に変化を生ずるという欠点があった。Therefore, the displacement of the tact 8 changes due to the influence of other ducts 10 etc. connected to the main tact 9. Therefore, there is a drawback that the thickness of the film grown on the semiconductor substrate 3 and the film thickness change.
（発明の目的）
本発明の目的は、以上の問題点を除去し、炉心管外の外
部条件が変化する条件下でも、気相成長膜の膜厚の安定
と歩留りの優れた半導体装置の製造方法を提供するにあ
る。(Objective of the Invention) An object of the present invention is to eliminate the above-mentioned problems and to manufacture a semiconductor device with stable film thickness of the vapor-phase grown film and excellent yield even under conditions where the external conditions outside the reactor tube change. We are here to provide you with a method.
（発明の構成）
本発明の半導体装置の製造方法は、半導体基板上に気相
成長法によシ絶縁膜あるいはエピタキシャル層を形成す
る半導体装−の製造方法において、炉心管の終端からの
排気量を自動的に一足輌に制御することにより、外部か
らの影も・による排気蓋の変化をなくシ、成長される絶
縁膜あるいはエピタキシャル層の岸さのバラツキを抑え
ることによシ構成される。(Structure of the Invention) The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device in which an insulating film or an epitaxial layer is formed on a semiconductor substrate by a vapor phase growth method. By automatically controlling each step, changes in the exhaust cover due to external shadows can be eliminated, and variations in the thickness of the insulating film or epitaxial layer to be grown can be suppressed.
（実施例）
以下、本発明の実施例について、図面を参照して説明す
る。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第２図は本発明の一実施例を説明するだめの気相成長装
置の一例の構成図である。FIG. 2 is a block diagram of an example of a vapor phase growth apparatus for explaining an embodiment of the present invention.
第２図において、１〜６に示す気相成長装置及び半導体
基板の設置等は従来の第１図と同様である。本発明に於
ては炉の直接の排気ダクト８′にわｌ。In FIG. 2, the installation of the vapor phase growth apparatus and semiconductor substrates shown in 1 to 6 are the same as in the conventional FIG. 1. In the present invention, a direct exhaust duct 8' of the furnace is provided.
気倉を検知する１ｃめのセンサー１１を取り伺ける。We can inspect the 1st sensor 11 that detects air storage.
センサー１Ｆはコントローラ１２に接続する。コントロ
ーラ１２はコントローラに設定された値とセンサー１１
が検知した値を比較し、そのずれ分に相当する信号を＃
１動部１３にフィードバックし、ダンパー７′を自動的
に調整し、排気量を一定に維持する。Sensor 1F is connected to controller 12. The controller 12 uses the values set in the controller and the sensor 11.
Compare the detected values and output the signal corresponding to the difference #
1 to the moving part 13 to automatically adjust the damper 7' to maintain the displacement constant.
従って、メインダクト１４に接続されている他の夕゛ク
ト１５，１６の排気量：が変化しメインタクトの排気条
件に変化が生じてもダクト８′の排気１では一定に維持
できるので、十得体基板に成長される膜厚は格に一定に
維持することが出来、膜ｊ早のバラツキのすくない半導
体装（至）を製造することが出来る。Therefore, even if the exhaust volume of the other ducts 15 and 16 connected to the main duct 14 changes and the exhaust conditions of the main duct change, the exhaust 1 of the duct 8' can be maintained constant. The thickness of the film grown on the substrate can be kept very constant, and semiconductor devices with little variation in film thickness can be manufactured.
（発明の効果）
以上説明したように、本発明の半導体装す−の製造方法
によれば、炉心管を用いた気相成長法によシ絶縁膜ある
いはエピタキシャル層を成長させる際に常に膜厚のバラ
ツキのすくない半導体装置を製造することができ、製品
の歩怪りを上昇させることができる。(Effects of the Invention) As explained above, according to the method of manufacturing a semiconductor device of the present invention, when growing an insulating film or an epitaxial layer by a vapor phase growth method using a furnace tube, the film thickness is always increased. It is possible to manufacture a semiconductor device with less variation in the product quality, and it is possible to improve product quality.
第１図は従来の半導体装置の製造方法に用いる気相成長
膜りの一例の構成図、第２図は本発明の一実施例を説明
するための気相成長装置の構成図である。
１・・・・・・炉心管、２・・・・・・トレー、３・・
・・・・半導体基板、４・・・・・・加熱部、５・・・
・・・ミックスガス導入部、６・・・・・・ディフュー
ザー、７，７′・・・・・・ダンパー、８゜８′・・・
・・・炉心管に接続されている排気ダクト、９・・・・
°・メインタクト、１０，１５．１６・・・・・・メイ
ンタクトに接続されている他のダクト、１１・旧・・排
気量検知センサー、１２・・・・・排気量コントローラ
、１３・・・・・・久ンパー躯動部。FIG. 1 is a block diagram of an example of a vapor phase growth film used in a conventional semiconductor device manufacturing method, and FIG. 2 is a block diagram of a vapor phase growth apparatus for explaining an embodiment of the present invention. 1...Furnace tube, 2...Tray, 3...
... Semiconductor substrate, 4 ... Heating section, 5 ...
...Mixed gas introduction part, 6...Diffuser, 7,7'...Damper, 8゜8'...
...Exhaust duct connected to the reactor core tube, 9...
° Main tact, 10, 15. 16... Other ducts connected to the main tact, 11 Old... Exhaust volume detection sensor, 12... Displacement controller, 13... ...Kyunpa's moving part.
Claims (2)
エピタキシャル層を形成する半導体装置の製造方法にお
いて、炉心管の終端からの拶１気ｔえを自動的に一定量
に制御することによシ、外部からの影曽によるお卜気量
の変化をなくシ、成長される絶縁膜あるいはエピタキシ
ャル層の厚さのバラツキを抑えることを栖徴とする半導
体装置の製造方法。(1) In a method of manufacturing a semiconductor device in which an insulating film or an epitaxial layer is formed on a semiconductor substrate by a vapor phase growth method, the amount of heat from the end of the core tube is automatically controlled to a constant amount. A method for manufacturing a semiconductor device whose characteristics are to eliminate variations in the amount of air flow due to external influences and to suppress variations in the thickness of an insulating film or epitaxial layer to be grown.
御する手段が、炉心管の終端に接続された排気ダクトに
設置された排気量を検知するためのセンサーと、該セン
サーからの信号を読み取り設定した値と比較し制御信号
を出すコントローラと、該コントローラよシ出された信
号によシダンパーを駆動させる駆動部と、ｉ動部によ多
制御されるダンパーにより構成される特許請求の範囲第
（１）項記載の半導体装置の製造方法。(2) The means for automatically controlling the exhaust volume from the end of the reactor core tube to a constant amount includes a sensor for detecting the exhaust volume installed in an exhaust duct connected to the end of the reactor core tube, and A patent consisting of a controller that reads a signal, compares it with a set value, and outputs a control signal, a drive section that drives a damper based on the signal output from the controller, and a damper that is controlled by the i-moving section. A method for manufacturing a semiconductor device according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24031183A JPS60132321A (en) | 1983-12-20 | 1983-12-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24031183A JPS60132321A (en) | 1983-12-20 | 1983-12-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60132321A true JPS60132321A (en) | 1985-07-15 |
Family
ID=17057566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24031183A Pending JPS60132321A (en) | 1983-12-20 | 1983-12-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60132321A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4748135A (en) * | 1986-05-27 | 1988-05-31 | U.S. Philips Corp. | Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
| US20160042984A1 (en) * | 2014-08-08 | 2016-02-11 | Tokyo Electron Limited | Substrate Heating Device, Substrate Heating Method and Computer-Readable Storage Medium |
-
1983
- 1983-12-20 JP JP24031183A patent/JPS60132321A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4748135A (en) * | 1986-05-27 | 1988-05-31 | U.S. Philips Corp. | Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
| US20160042984A1 (en) * | 2014-08-08 | 2016-02-11 | Tokyo Electron Limited | Substrate Heating Device, Substrate Heating Method and Computer-Readable Storage Medium |
| US9991140B2 (en) * | 2014-08-08 | 2018-06-05 | Tokyo Electron Limited | Substrate heating device, substrate heating method and computer-readable storage medium |
| US10256122B2 (en) | 2014-08-08 | 2019-04-09 | Tokyo Electron Limited | Substrate heating method |
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